SDT02S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor VRRM 600 V • Switching behavior benchmark Qc 4.6 nC • No reverse recovery IF 2 material - Silicon Carbide A P-TO220-2-2. • No temperature influence on the switching behavior • No forward recovery Type Package Ordering Code Marking Pin 1 Pin 2 SDT02S60 P-TO220-2-2. Q67040-S4511 D02S60 C A Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous forward current, TC=100°C IF RMS forward current, f=50Hz IFRMS Surge non repetitive forward current, sine halfwave IFSM Value 2 Unit A 2.8 4.1 TC=25°C, tp=10ms Repetitive peak forward current IFRM 7.3 IFMAX 17 Tj=150°C, TC=100°C, D=0.1 Non repetitive peak forward current tp=10µs, TC=25°C i 2t value, TC=25°C, tp=10ms ∫i2dt 0.08 A²s Repetitive peak reverse voltage VRRM 600 V Surge peak reverse voltage VRSM 600 Power dissipation, TC=25°C Ptot 15 W Operating and storage temperature Tj , Tstg -55... +175 °C Rev. 2.0 Page 1 2004-03-22 SDT02S60 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - - 10 Thermal resistance, junction - ambient, leaded RthJA - - 62 K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Diode forward voltage V VF IF=2A, Tj=25°C - 1.75 2 IF=2A, Tj=150°C - 2.2 2.6 Reverse current µA IR V R=600V, T j=25°C - 7 100 V R=600V, T j=150°C - 30 500 Rev. 2.0 Page 2 2004-03-22 SDT02S60 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Qc - 4.6 - nC t rr - n.a. - ns AC Characteristics Total capacitive charge V R=400V, IF=2A, diF/dt=200A/µs, T j=150°C Switching time V R=400V, IF=2A, diF/dt=200A/µs, T j=150°C Total capacitance C pF V R=1V, T C=25°C, f=1MHz - 50 - V R=300V, T C=25°C, f=1MHz - 5.2 - V R=600V, T C=25°C, f=1MHz - 5.0 - Rev. 2.0 Page 3 2004-03-22 SDT02S60 1 Power dissipation 2 Diode forward current Ptot = f (TC) IF = f (TC) parameter: Tj≤175 °C 16 2.2 A W 1.8 1.6 10 IF Ptot 12 1.4 1.2 8 1 6 0.8 0.6 4 0.4 2 0 0 0.2 20 40 60 80 100 120 140 0 0 °C 180 TC 20 40 60 80 100 120 140 °C 180 TC 3 Typ. forward characteristic 4 Typ. forward power dissipation vs. IF = f (VF) average forward current parameter: Tj , tp = 350 µs PF(AV)=f(IF) TC=100°C, d = tp/T 7 4 A W IF PF(AV) 150°C 100°C 25°C 3 2.5 5 d=0.1 d=0.2 d=0.5 d=1 4 2 3 1.5 2 1 1 0.5 0 0 Rev. 2.0 0.5 1 1.5 2 2.5 3 V VF 0 0 4 0.5 1 1.5 2 A 3 IF(AV) Page 4 2004-03-22 SDT02S60 5 Typ. reverse current vs. reverse voltage 6 Transient thermal impedance I R=f(VR) ZthJC = f (t p) parameter : D = t p/T 2 10 10 2 µA 0 10 1 150°C 125°C 100°C 25°C ZthJC IR 10 1 10 SDT02S60 K/W 10 0 10 -1 10 D = 0.50 -1 0.20 10 0.10 -2 0.05 10 single pulse -2 0.02 10 -3 10 -3 50 150 250 350 450 V VR 10 -4 -7 10 600 0.01 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 7 Typ. capacitance vs. reverse voltage 8 Typ. C stored energy C= f(V R) EC=f(V R) parameter: TC = 25 °C, f = 1 MHz 26 1.2 pF µJ 22 1 20 0.9 EC C 18 16 0.8 0.7 14 0.6 12 0.5 10 0.4 8 0.3 6 4 0.2 2 0.1 0 1 10 10 2 10 V 3 VR Rev. 2.0 0 0 100 200 300 400 600 V VR Page 5 2004-03-22 SDT02S60 9 Typ. capacitive charge vs. current slope Q c=f(diF /dt) parameter: Tj = 150 °C 6 IF*2 IF Qc nC 4 IF*0.5 3 2 1 0 100 200 300 400 500 600 700 800 A/µs 1000 diF/dt Rev. 2.0 Page 6 2004-03-22 SDT02S60 TO-220-2-2 N A P dimensions E D U H B V F W X J L G Rev. 2.0 M max min max A 9.70 10.10 0.3819 0.3976 B 15.30 15.90 0.6024 0.6260 C 0.65 0.85 0.0256 0.0335 D 3.55 3.85 0.1398 0.1516 E 2.60 3.00 0.1024 0.1181 F 9.00 9.40 0.3543 0.3701 G 13.00 14.00 0.5118 0.5512 H 17.20 17.80 0.6772 0.7008 J 4.40 4.80 0.1732 0.1890 K 0.40 0.60 0.0157 0.0236 L 1.05 typ. M 2.54 typ. 0.1 typ. N 4.4 typ. 0.173 typ. P 1.10 1.40 0.41 typ. 0.0433 0.0551 2.4 typ. 0.095 typ. 0.26 typ. U 6.6 typ. V 13.0 typ. 0.51 typ. W 7.5 typ. 0.295 typ. X T [inch] min T C [mm] symbol 0.00 0.40 0.0000 0.0157 K Page 7 2004-03-22 SDT02S60 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.0 Page 8 2004-03-22