SE3455/5455 GaAs Infrared Emitting Diode INFRA-83.TIF FEATURES • TO-46 metal can package • Choice of flat window or lensed package • 90° or 20° (nominal) beam angle option • 935 nm wavelength • Wide operating temperature range (-55°C to +125°C) • Ideal for high pulsed current applications • Mechanically and spectrally matched to SD3421/5421 photodiode, SD3443/5443/5491 phototransistor, SD3410/5410 photodarlington and SD5600 series Schmitt trigger OUTLINE DIMENSIONS in inches (mm) Tolerance 3 plc decimals ±0.005(0.12) 2 plc decimals ±0.020(0.51) DESCRIPTION The SE3455/5455 series consists of a gallium arsenide infrared emitting diode mounted in a TO-46 metal can package. The SE3455 series has flat window cans providing a wide beam angle, while the SE5455 series has glass lensed cans providing a narrow beam angle. These devices are constructed with dual bond wires suitable for pulsed current applications. The TO-46 packages offer high power dissipation capability and are ideally suited for operation in hostile environments. SE3455 .188 (4.77) DIA. .178 (4.52) .219 (5.56) DIA. .208 (5.28) .500 (12.70) MIN. 45° .046(1.17) .036(.91) 1 .048(1.22) .160 (4.06) DIA. .137 (3.48) .015 (0.36) INFRA--5.DIM .153 (3.89) .140 (3.56) .100(2.54)DIA NOM 2 .028(.71) .018 DIA. (.460) LEADS: 1. CATHODE (TAB) 2. ANODE (CASE) SE5455 45° .188 (4.77) DIA. .178 (4.52) .219 (5.56) DIA. .208 (5.28) .500 (12.70) MIN. .046(1.17) .036(.91) 1 .160 (4.06) DIA. .137 (3.48) .247 (6.27) .224 (5.89) 26 © Honeywell Europe S.A. .015 (0.36) .200 5.08 .048(1.22) .100(2.54)DIA NOM 2 .028(.71) .018 DIA. (.460) LEADS: 1. CATHODE (TAB) 2. ANODE (CASE) Honeywell reserves the right to make changes in order to improve design and supply the best products possible. SE3455/5455 GaAs Infrared Emitting Diode ELECTRICAL CHARACTERISTICS (25°C unless otherwise noted) PARAMETER Total Power Output SE3455-001, SE5455-001 SE3455-002, SE5455-002 SE3455-003, SE5455-003 SE3455-004, SE5455-004 Forward Voltage Reverse Breakdown Voltage Peak Output Wavelength Spectral Bandwidth Spectral Shift With Temperature Beam Angle(1) SE3455 SE5455 Radiation Rise And Fall Time SYMBOL PO MIN TYP MAX UNITS mW TEST CONDITIONS IF=100 mA 1.7 V V nm nm nm/°C degr. IF=100 mA IR=10 µA 2.0 3.5 4.8 5.4 VF VBR λp ∆λ ∆λp/∆T Ø 3.0 935 50 0.3 90 20 0.7 tr, tf IF=Constant µs Notes 1. Beam angle is defined as the total included angle between the half intensity points. ABSOLUTE MAXIMUM RATINGS (25°C Free-Air Temperature unless otherwise noted) Continuous Forward Current Peak Forward Current (1µs pulse width, 300 pps) Power Dissipation Operating Temperature Range Storage Temperature Range Soldering Temperature (10 sec) SCHEMATIC Anode 100 mA 3A 150 mW(1) -55°C to 125°C -65°C to 150°C 260°C INFRA--1.SCH Notes 1. Derate linearly from 25°C free-air temperature at the rate of 1.43 mW/°C. Honeywell reserves the right to make changes in order to improve design and supply the best products possible. Cathode 27 SE3455/5455 GaAs Infrared Emitting Diode Radiant Intensity vs Angular Displacement (SE3455) Fig. 2 -60 -45 -30 -15 0 +15 +30 +45 +60 Angular displacement - degrees Fig. 3 INFRA-23.GRA Relative intensity 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 INFRA-17.GRA Relative intensity Fig. 1 Radiant Intensity vs Forward Current Radiant Intensity vs Angular Displacement (SE5455) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 -40 -30 -20 -10 0 +10 +20 +30 +40 Angular displacement - degrees Fig. 4 Forward Voltage vs Forward Current Pulsed 200 Forward voltage - V Normalized radiant intensity - % 250 150 100 50 100 200 300 400 500 Forward current - mA Fig. 5 INFRA-19.GRA 0 INFRA-18.GRA 0.0 Forward Voltage vs Temperature 0 Relative intensity 1.33 1.27 IF = 100 mA 1.25 1.21 -30 -10 10 30 50 70 Temperature - °C 90 INFRA--5.GRA 1.23 INFRA-20.GRA Forward voltage - V 1.35 1.29 20 40 60 80 100 Forward current - mA Fig. 6 1.31 1.35 1.30 1.25 1.20 1.15 1.10 1.05 1.00 0.95 0.90 Spectral Bandwidth 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 870 890 910 930 950 970 990 1010 Wavelength - nm All Performance Curves Show Typical Values 28 Honeywell reserves the right to make changes in order to improve design and supply the best products possible. SE3455/5455 GaAs Infrared Emitting Diode Coupling Characteristics SE3455 with SD3443 Fig. 8 1.0 0.8 0.8 Normalized light current 1.0 0.6 0.4 0.2 0.4 0.6 0.8 1.0 Window-to-window distance - inches Normalized radiant intensity INFRA-24.GRA 0.0 INFRA-21.GRA 0.2 0.0 Fig. 9 Coupling Characteristics SE5455 with SD5443 0.6 0.4 0.2 0.0 0 1 2 3 4 5 6 7 8 9 Lens-to-lens distance - inches Radiant Intensity vs Case Temperature Normalized to IF = 100 mA TA = 25 °C 5.0 4.0 3.0 2.0 1.0 0.5 0.4 0.3 0.2 0.1 -75 -50 -25 0 25 50 75 100 125 Case temperature - °C Honeywell reserves the right to make changes in order to improve design and supply the best products possible. INFRA-22.GRA Normalized light current Fig. 7 29