SMT Multi TOPLED SFH 331 3.0 2.6 2.3 2.1 0.9 0.7 3 C C E 0.1 typ 1.1 0.5 3.4 3.0 A 3.7 3.3 2 (2.4) 0.8 0.6 2.1 1.7 1 4 0.18 0.12 Package marking Emission color : super-red 0.6 0.4 GPL06924 Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Typ Type Bestellnummer Ordering Code SFH 331 Q62702-P1634 Wesentliche Merkmale ● Geeignet für Vapor-Phase Löten und IR-Reflow Löten Semiconductor Group Features ● Suitable for vapor-phase and IR-reflow soldering 1 1997-11-01 SFH 331 Grenzwerte Maximum Ratings Bezeichnung Description Symbol Symbol Wert Value LED Transistor Einheit Unit Betriebstemperatur Operating temperature range Top – 55 ... + 100 – 55 ... + 100 °C Lagertemperatur Storage temperature range Tstg – 55 ... + 100 – 55 ... + 100 ˚C Sperrschichttemperatur Junction temperature Tj + 100 + 100 ˚C Durchlaßstrom (LED) Forward current (LED) IF 30 – mA Kollektorstrom (Transistor) Collector current (Transistor) IC – 15 mA Stoßstrom Surge current t ≤ 10 µs, D = 0.005 IFM 500 75 mA Sperrspannung (LED) Reverse voltage (LED) VR 5 – V Kollektor-Emitter Spannung (Transistor) Collector-emitter voltage (Transistor) VCE – 35 V Verlustleistung Total power dissipation Ptot 100 165 mW 450 450 K/W 350 – K/W Wärmewiderstand Sperrschicht/Umgebung Thermal resistance junction/ambient Montage auf PC-Board* Rth JA 2 (Padgröße ≥ 16 mm ) mounting on pcb* (pad size ≥ 16 mm 2) Sperrschicht / Lötstelle Rth JS junction / soldering joint * PC-board: G30/FR4 Notes Die angegebenen Grenzdaten gelten für den Chip, für den sie angegeben sind, unabhängig vom Betriebszustand des anderen. The stated max. ratings refer to the specified chip regardless of the operating status of the other one. Semiconductor Group 2 1997-11-01 SFH 331 Kennwerte LED (TA = 25 ˚C) Characteristics LED Bezeichnung Description Symbol Symbol Wert Value Einheit Unit Wellenlänge des emittierten Lichtes Wavelength at peak emission IF = 10 mA (typ.) λpeak (typ.) 635 nm Dominantwellenlänge Dominant wavelength IF = 10 mA (typ.) λdom (typ.) 628 nm Spektrale Bandbreite bei 50 % Irel max (typ.) ∆λ Spectral bandwidth at 50 % Irel max (typ.) IF = 10 mA 45 nm Abstrahlwinkel bei 50 % IV (Vollwinkel) Viewing angle at 50 % IV 2ϕ 120 Grad degr. Durchlaßspannung Forward voltage IF = 10 mA (typ.) VF (max.) VF 2.0 2.6 V V Sperrstrom Reverse current VR = 5 V (typ.) IR (max.) IR 0.01 10 µA µA (typ.) C0 12 pF (typ.) tr (typ.) tf 300 150 ns ns (typ.) IV 6 (4.0 ... 12.5) mcd Kapazität Capacitance VR = 0 V, f = 1 MHz Schaltzeiten: Switching times: IV from 10 % to 90 % IV from 90 % to 10 % IF = 100 mA, tp = 10 µs, RL = 50 Ω Lichtstärke (Gruppe JK) Luminous intensity (group JK) IF = 10 mA Semiconductor Group 3 1997-11-01 SFH 331 Kennwerte Fototransistor (TA = 25 oC, λ = 950 nm) Characteristics Phototransistor Bezeichnung Description Symbol Symbol Wert Value Einheit Unit Wellenlänge der max. Fotoempfindlichkeit Wavelength of max. sensitivity λS max 860 nm Spektraler Bereich der Fotoempfindlichkeit S = 10% von Smax Spectral range of sensitivity S = 10% of Smax λ 380 ... 1150 nm 0.045 mm2 Bestrahlungsempfindliche Fläche (∅ 240 µm) A Radiant sensitive area (∅ 240 µm) Abmessung der Chipfläche Dimensions of chip area L×B 0.45 × 0.45 mm × mm Abstand Chipoberfläche zu Gehäuseoberfläche Distance chip front to case surface H 0.5 ... 0.7 mm Halbwinkel Half angle ϕ ± 60 Grad degr. Kapazität Capacitance VCE = 0 V, f = 1 MHz, E = 0 CCE 5.0 pF Dunkelstrom Dark current VCE = 25 V, E = 0 ICEO 1 (≤ 200) nA Fotostrom Photocurrent Ee = 0.1 mW/cm2, VCE = 5 V IPCE ≥ 16 µA Anstiegszeit/Abfallzeit Rise time/Fall time IC = 1 mA, VCC = 5 V, RL = 1 kΩ tr, tf 7 µs Kollektor-Emitter-Sättigungsspannung Collector-emitter saturation voltage IC = 5 µA, Ee = 0.1 mW/cm2 VCEsat 150 mV Semiconductor Group 4 1997-11-01 SFH 331 LED Radiation characteristics Irel = f (ϕ) Phototransistor Directional characteristics Srel = f (ϕ) 40˚ 30˚ 20˚ 10˚ 0˚ ϕ 50˚ OHL01660 1.0 0.8 0.6 60˚ 0.4 70˚ 0.2 80˚ 0 90˚ 100˚ 1.0 0.8 0.6 0˚ 0.4 20˚ 40˚ 60˚ 80˚ 100˚ 120˚ LED Relative spectral emission Irel = f (λ), TA = 25 ˚C, IF = 20 mA V (λ) = Standard eye response curve OHL02350 100 % Φ rel 80 Vλ 60 40 20 super-red 0 400 450 500 550 600 650 nm 700 λ Semiconductor Group 5 1997-11-01 SFH 331 Rel. luminous intensity IV / IV(10 mA) = f (IF), TA = 25 ˚C Forward current IF = f (VF) TA = 25 ˚C OHL02351 10 2 Ι F mA Perm. pulse handling capability IF = f (tp) Duty cycle D = parameter, TA = 25 ˚C OHL02316 10 1 OHL01686 10 3 tP ΙF ΙV tP D= 5 5 super-red 10 -1 super-red T D = 0.005 0.01 0.02 0.05 0.1 10 0 10 1 ΙF T mA Ι V(10mA) 10 2 0.2 5 5 10 0 10 5 DC 5 10 -1 1.0 1.4 1.8 2.2 2.6 Max. permissible forward current IF = f (TA) ΙF 10 -3 10 3.0 V 3.4 VF -1 5 10 0 5 10 1 mA 10 ΙF 10 -4 10 -3 10 -2 10 -1 10 0 s 10 1 tp Dominant wavelength λdom = f (TA) IF = 20 mA OHL02104 690 λ peak OHL02105 690 λ dom nm 50 10 1 -5 10 2 Wavelength at peak emission λpeak = f (TA), IF = 20 mA OHL01661 60 mA 0.5 -2 nm 650 650 40 super-red 630 super-red 630 30 orange 610 610 20 10 590 yellow 590 570 green 570 orange yellow green pure-green pure-green 0 0 20 40 60 Forward current VF = f (TA) IF = 10 mA 0 20 40 60 80 ˚C 100 TA 550 0 20 40 60 80 ˚C 100 TA Rel. luminous intensity IV / IV(25 ˚C) = f (TA), IF = 10 mA OHL02106 2.4 VF 550 80 ˚C 100 TA OHL02150 2.0 ΙV V Ι V (25 ˚C) 2.2 1.6 1.2 2.0 yellow green green super-red orange yellow 1.8 0.8 orange super-red pure-green pure-green 0.4 1.6 1.4 0 20 40 60 80 ˚C 100 0.0 0 20 40 Semiconductor Group 60 80 ˚C 100 TA TA 6 1997-11-01 SFH 331 Phototransistor Rel. spectral sensitivity Srel = f (λ) OHF01121 100 Photocurrent IPCE = f (VCE), Ee = Parameter OHF01529 10 0 mA mW 1 2 cm Ι PCE S rel % Dark current ICEO = f (VCE), E = 0 80 60 0.5 mW cm 2 0.25 mW cm 2 OHF01527 10 1 nA Ι CEO 10 0 10 -1 10 -1 mW 0.1 2 cm 40 10 -2 20 0 400 600 800 1000 nm 1200 λ Total power dissipation Ptot = f (TA) 5 10 15 20 25 30 V 35 V CE C CE pF 160 4.0 10 -3 0 5 10 15 20 25 30 V 35 V CE Photocurrent IPCE/IPCE25o = f (TA), VCE = 5 V OHF01528 5.0 mW P tot 0 Capacitance CCE = f (VCE), f = 1 MHz, E = 0 OHF00871 200 10 -2 Ι PCE OHF01524 1.6 Ι PCE 25 1.4 1.2 3.5 120 1.0 3.0 80 2.5 0.8 2.0 0.6 1.5 0.4 40 1.0 0.2 0.5 0 0 20 40 60 Dark current ICEO = f (TA), VCE = 5 V, E = 0 Ι CEO 10 0 10 1 V 10 2 V CE 0 -25 0 25 50 75 C 100 TA OHF01924 10 3 µA Ι PCE 10 2 10 2 10 1 10 1 10 0 10 0 10 -1 -25 10 -1 Photocurrent IPCE = f (Ee), VCE = 5 V OHF01530 10 3 nA 0 10 -2 80 ˚C 100 TA 0 25 50 Semiconductor Group 75 ˚C 100 TA 10 -1 -3 10 4 3 2 10 -2 10 0 mW/cm 2 Ee 7 1997-11-01