SFAF1601G-SFAF1608G GLASS PASSIVATED SUPER FAST RECTIFIERS PRODUCT SUMMARY Isolated 16.0 AMPS FEATURES High efficiency, low VF. High current capability High reliability High surge current capability Low power loss. For use in low voltage, high frequency inventor, free wheeling, and polarity protection application ITO-220AC .185(4.7) .173(4.4) .406(10.3) .390(9.90) .124(3.16) .118(3.00) .134(3.4)DIA .113(3.0)DIA .112(2.85) .100(2.55) .272(6.9) .248(6.3) .606(15.5) .583(14.8) .063(1.6) MAX MECHANCIAL DATA .161(4.1) .146(3.7) Cases: ITO-220AC molded plastic Epoxy: UL 94V-0 rate flame retardant Terminals: Pure tin plated, lead free. solderable per Case Positive MIL-STD-202, Method 208 guaranteed Polarity: As marked High temperature soldering guaranteed: 260oC/10 seconds .16″, (4.06mm) from case Weight: 2.24 grams .110(2.8) .098(2.5) .055(1.4) .043(1.1) .030(0.76) .020(0.50) .035(0.9) .020(0.5) .071(1.8) MAX .543(13.8) .512(13.2) 2 .100(2.55) .100(2.55) PIN 1 PIN 2 CASE Case Positive Dimensions in inches and (millimeters) Pb-free; RoHS-compliant 04/13/2007 Rev.1.00 www.SiliconStandard.com 1 SFAF1601G-SFAF1608G MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 oC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Type Number Symbol Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current @TC = 100 oC Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) Maximum Instantaneous Forward Voltage @ 16.0A Maximum DC Reverse Current @TA=25 oC at Rated DC Blocking Voltage @ TA=100 oC Maximum Reverse Recovery Time (Note 1) Typical Junction Capacitance (Note 2) VRRM VRMS VDC SFAF SFAF SFAF SFAF SFAF SFAF SFAF SFAF 1601G 1602G 1603G 1604G 1605G 1606G 1607G 1608G 50 35 50 100 150 200 300 400 500 600 70 105 140 210 280 350 420 100 150 200 300 400 500 600 V V V I(AV) 16.0 A IFSM 200 A VF 0.975 1.3 1.7 V IR 10 400 uA uA Trr 35 nS Cj 130 Typical Thermal Resistance C (Note 3) 1.3 RθJC Operating Temperature Range TJ -65 to +150 Storage Temperature Range TSTG -65 to +150 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A Notes: 2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C. 3. Mounted on Heatsink Size of 3” x 5” x 0.25” Al-Plate. 04/13/2007 Rev.1.00 Units www.SiliconStandard.com 100 o pF C/W o C o C 2 SFAF1601G-SFAF1608G RATINS AND CHARACTERISTIC CURVES (SFAF1601G THRU SFAF1608G) 20 16 12 8 4 00 50 100 150 o 100 TJ=100 0C TJ=75 0C 10 1 TJ=25 0C 250 Tj=25 0C 200 0.1 8.3ms Single Half Sine Wave JEDEC Method 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE. (%) 150 FIG.5- TYPICAL FORWARD CHARACTERISTICS 100 100 100 50 NUMBER OF CYCLES AT 60Hz FIG.4- TYPICAL JUNCTION CAPACITANCE 300 Tj=25 0C 250 200 SF AF 150 100 SF AF 16 01 G~ S 05 16 1 2 FA F1 G~ S FA F 50 0 16 5 60 4G 10 3 1 0.3 0.1 0.03 08 G 10 30 Tj=25oC Pulse Width=300 s 1% Duty Cycle 0.01 0.4 20 SF AF 20 FA F 10 ~S 5 1G 2 160 0 1 160 4G SF AF 16 16 07 05 G~ G ~S SF FA AF F1 16 60 08 G 6G 50 SF AF PEAK FORWARD SURGE CURRENT. (A) FIG.3- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT INSTANTANEOUS REVERSE CURRENT. ( A) 1000 CASE TEMPERATURE. ( C) CAPACITANCE.(pF) FIG.2- TYPICAL REVERSE CHARACTERISTICS INSTANTANEOUS FORWARD CURRENT. (A) AVERAGE FORWARD CURRENT. (A) FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE 50 100 200 500 0.6 0.8 1000 1.0 1.2 1.4 1.6 1.8 FORWARD VOLTAGE. (V) REVERSE VOLTAGE. (V) FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50 NONINDUCTIVE 10 NONINDUCTIVE trr +0.5A (-) DUT (+) 50Vdc (approx) (-) PULSE GENERATOR (NOTE 2) NON INDUCTIVE OSCILLOSCOPE (NOTE 1) NOTES: 1. Rise Time=7ns max. Input Impedance= 1 megohm 22pf 2. Rise Time=10ns max. Sourse Impedance= 50 ohms 0 -0.25A (+) -1.0A 1cm SET TIME BASE FOR 5/ 10ns/ cm Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no guarantee or warranty, expressed or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of Silicon Standard Corporation or any third parties. 04/13/2007 Rev.1.00 www.SiliconStandard.com 3