Crystal oscillator HIGH-FREQUENCY CRYSTAL OSCILLATOR SG-636 series Product number (please refer to page 1) Q33 6 3 6 x x x x x x x 0 0 • A small SMD that enables high-density mounting. • A general-purpose device with builtin heat-resisting cylindrical AT-cut crystal and allowing almost the same temperature condition for soldering as SMD IC. • Low current consumption by output enable function(OE) or standby function(ST). Actual size Specifications (characteristics) Item Symbol SG-636PTF 2.21675 MHz to f0 Output frequency range 41.0000 MHz Power source Max. supply voltage VDD-GND voltage Operating voltage VDD Temperature Storage temperature TSTG range Operating temperature TOPR Frequency stability ∆f/f0 Current consumption lop Output disable current IOE CMOS level Duty TTL level Output enable/disable input voltage Output rise time Output fall time CMOS level CMOS level Stored as bare product after unpacking Refer to page 31. "Frequency range" C: ±100 x 10-6 17 mA Max. 35 mA Max. 9 mA Max. 5 mA Max. 10 mA Max. 20 mA Max. 5 mA Max. 3 mA Max. 40 % to 60 % 45 % to 55 % 45 % to 55 % — VDD -0.4 V Min. 0.4 V Max. CL 50 pF Max. N 10 TTL Max. 20 pF Max.( ≤ 55 MHz) 15 pF Max.( > 55 MHz) 30 pF Max. 5 LSTTL Max. — CL< _15 pF 2.0 V Min. 0.8 VDD Min. VIL 0.8 V Max. 0.2 VDD Max. Oscillation start up time Aging tosc Shock resistance S.R. No load condition OE=GND, ST=GND 2 µA Max.(SCE) CMOS load: 1/2 VDD level TTL load: 1.4 V level IOH =-8 mA (PTF) /-4 mA (PH / SCE / PCE / PDE) IOL =16 mA (PTF) /4 mA (PH / SCE / PCE / PDE) 15 pF Max. VIH tTHL TTL level Refer to page 31. "Frequency range" 2.5 V ±0.25 V -20 °C to +70 °C tTLH TTL level 40.0000MHz 3.3 V ±0.3 V VOL Output load condition CMOS level (fan out) 2.21675MHz to -55 °C to +100 °C VOH Output voltage Remarks SG-636PDE -0.5 V to +7.0 V 5.0 V ±0.5 V tw/t TTL level Specifications SG-636PH SG-636SCE/PCE 41.0001 MHz to 2.21675 MHz to 70.0000 MHz 40.0000 MHz OE,ST (SCE) 7 ns Max. 5 ns Max. 5 ns Max. — TTL load: 0.4 V→2.4 V 7 ns Max. 5 ns Max. CMOS load: 80 %→20 % VDD 5 ns Max. — 4 ms Max. 10 ms Max. ±5 x 10-6 /year Max. fa CMOS load: 20 %→80 % VDD TTL load: 2.4 V→0.4 V 4 ms Max. Time at minimum operating voltage to be O s Ta=+25 °C,VDD=5.0 V / 3.3 V / 2.5 V,first year Three drops on a hard board from 750 mm or excitation test with 29400 m/s2 x 0.3 ms x 1/2 sine wave in 3 directions ±20 x 10-6 Max. Note: • Unless otherwise stated,characteristics (specifications) shown in the above table are based on the rated operating temperature and voltage condition. • External by-pass capacitor is required. External dimensions (Unit: mm) Recommended soldering pattern 10.5 Max. 5.0 E 18.4320C PTF9352A NO. Pin terminal 1 2 3 4 OE or ST GND OUT VDD 1.3 2.1 #3 5.8 Max. #4 0.5 5.08 Note. OE Pin (PTF, PH, PCE, PDE, PTW, PHW, PCW) OE pin - "H" or "open" : Specified frequency output. OE pin - "L" : Output is high impedance. 0.05 Min. 2.7 Max. 4.6 #2 #1 (1.0) 3.6 (1.0) Metal may be exposed on the top or bottom of this product. This won't affect any quality, reliability or electrical spec. ST pin (SCE) ST pin (STW, SHW, SCW) ST pin - "H" or "open" : Specified frequency output. ST pin - "H" or "open" : Specified frequency output. ST pin - "L" : Output is high impedance., oscillation stops. ST pin - "L" : Output is low level (weak pull - down), oscillation stops. 41 5.08 (Unit: mm) Crystal oscillator Specifications (characteristics) Item Symbol Output frequency range fO Max. supply voltage VDD-GND Power source Operating voltage VDD voltage Storage temperature TSTG Temperature Operating temperature TOPR range ∆f/f0 Frequency stability IOP Current consumption IOE Output disable current IST Standby current CMOS level Duty TTL level tw/t VOH Output voltage VOL Output load condition (fan out) Output enable CMOS level disable input voltage TTL level CL VIH VIL CMOS level Output rise time tTLH TTL level CMOS level Output fall time tTHL TTL level Oscillation start up time Aging tOSC fa Shock resistance S.R. Specifications SG-636PTG SG-636PHG SG-636PCG/SCG 2.21675 MHz to 33.0000 MHz -0.5 V to +7.0 V 4.5 V to 5.5 V 2.7 V to 3.6 V -55 °C to +100 °C -20 °C to +70 °C B : ±50 x 10-6 C : ±100 x 10-6 25 mA Max. 12 mA Max. 20 mA Max. 10 mA Max. — 50 µA Max. — 45 % to 55 % 40 % to 60 % — 2.4 V Min. — VDD -0.4 V Min. — VDD -0.4 V Max. — — 0.4 V Max. 0.4 V Max. — 25 pF 2.0 V Min. 70 % VDD Min. 0.8 V Max. 20 % VDD Max. — 3.4 ns Max. 4.0 ns Max. 1.2 ns Max. — — 2.4 ns Max. — — — 3.4 ns Max. 4.0 ns Max. 1.2 ns Max. — — 2.4 ns Max. — — 12 ms Max. ±5 x 10-6 /year Max. ±20 x 10-6 Max. Remarks Refer to page 31. "Frequency range" Stored as bare product after unpacking Refer to page 31. "Frequency range" -20 °C to +70 °C No load condition OE=GND (P∗G) ST=GND (SCG) 50 % VDD, CL = 25 pF 1.4 V Level, CL = 25 pF IOH = -8 mA IOH = -16 mA IOL = 8 mA IOL = 16 mA OE, ST OE, ST 20 % to 80 % VDD, CL ≤ 25 pF 0.8 V to 2.0 V CL ≤ 25 pF 0.4 V to 2.4 V CL ≤ 25 pF 80 % to 20 % VDD CL ≤ 25 pF 2.0 V to 0.8 V CL ≤ 25 pF 2.4 V to 0.4 V CL ≤ 25 pF Time at minimum operating voltage to be 0 s Ta=+25 °C, VDD =5.0 V / 3.3 V, First year Three drops on a hard board from 750 mm or excitation test with 29400 m/s2 x 0.3 ms x 1/2 sine wave in 3 directions Specifications (characteristics) Item Symbol Specifications Duty tw/t Output voltage VOH VOL Output load condition (fan out) CL Output enable disable input voltage VIH VIL Output rise time tTLH Output fall time tTHL Oscillation start up time Aging tOSC fa SG-636PTW/STW SG-636PHW/SHW SG-636PCW/SCW 32.0001 MHz to 135.0000 MHz -0.5 V to +7.0 V 5.0 V ± 0.5 V 3.3 V ± 0.3 V -55 °C to +100 °C -20 °C to +70 °C B : ±50 x 10-6 C : ±100 x 10-6 45 mA Max. 28 mA Max. 30 mA Max. 16 mA Max. 50 µA Max. 40 % to 60 % — — 45 % to 55 % — — — 40 % to 60 % 40 % to 60 % — 45 % to 55% — VDD -0.4 V Min. 0.4 V Max. 15 pF — — 5 TTL + 15 pF — — 25 pF — — — 15 pF 15 pF — 25 pF — — 50 pF — 2.0 V Min. 70 % VDD Min. 0.8 V Max. 20 % VDD Max. 2.0 ns Max. — — 4.0 ns Max. — — — 3.0 ns Max. — — 4.0 ns Max. — — — 3.0 ns Max. 2.0 ns Max. — — 4.0 ns Max. — — — 3.0 ns Max. — — 4.0 ns Max. — — — 3.0 ns Max. 10 ms Max. ±5 x 10-6 /year Max. Shock resistance S.R. ±20 x 10-6 Max. Output frequency range fO Max. supply voltage VDD-GND Power source Operating voltage VDD voltage Storage temperature TSTG Temperature Operating temperature TOPR range ∆f/f0 Frequency stability IOP Current consumption IOE Output disable current IST Standby current Remarks Refer to page 31. "Frequency range" Stored as bare product after unpacking Refer to page 31. "Frequency range" No load condition OE=GND(P∗W) ST=GND(S∗W) TTL load : 1.4 V, CL = Max. TTL load : 1.4 V, 5TTL + 15 pF, fo ≤ 66.6667 MHz CMOS load : 50% VDD, CL = Max. CMOS load : 50% VDD, CL = 25 pF, fo ≤ 66.6667 MHz IOH= -16 mA (∗TW/HW)/-8 mA(∗CW) IOL= 16 mA (∗TW/HW)/8 mA(∗CW) fo ≤ 135 MHz fo ≤ 90 MHz fo ≤ 66.6667 MHz fo ≤ 135 MHz fo ≤ 90 MHz fo ≤ 66.6667MHz OE,ST OE,ST TTL load: 0.8 V→2.0 V, CL = Max. TTL load: 0.4 V→2.4 V, CL = Max. CMOS load: 20 %→80 % VDD, CL= 25 pF CMOS load: 20 %→80 % VDD, CL= 50 pF CMOS load: 20 %→80 % VDD, CL= 15 pF TTL load: 2.0 V→0.8 V, CL = Max. TTL load: 2.4 V→0.4V, CL = Max. CMOS load: 80 %→20 % VDD, CL= 25 pF CMOS load: 80 %→20 % VDD, CL= 50 pF CMOS load: 80 %→20 % VDD, CL= 15 pF Time at minimum operating voltage to be 0 s Ta=+25 °C, VDD =5.0 V / 3.3 V, first year Three drops on a hard board from 750 mm or excitation test with 29400 m/s2 x 0.3 ms x 1/2 sine wave in 3 directions 42