SKM 200GB126D ... Absolute Maximum Ratings Symbol Conditions IGBT % %23 5 7" SEMITRANSTM 3 Trench IGBT Modules SKM 200GB126D *+ 0. , - 8)2'%89 : Features !" # $ % Typical Applications & ' & () Values Units -*.. *#. -1. 4.. 6 *. ; <. === > -+. -*+ ' ' , <... *.. -<. 4.. ' ' --.. ' *.. -<. 4.. ' ' --.. ' '" - = Inverse diode %? %?23 *+ 0. , - %?3 -. @ =@ 7 -+. , Freewheeling diode %? %?23 *+ 0. , - %?3 -. @ =@ 7 -+. , SKM 200GAL126D Preliminary Data *+," & Characteristics Symbol Conditions IGBT *+," & 5 % 8 5 " % # ' 5 ." " 7 *+ -*+ , 7 *+ -*+ , 5 -+ " 7 *+ -*+ , % -+. '" 5 -+ " D & & 5 ." *+ " - 3C 2E>E =" ; *+ -*+ , & & #.. " % -+. ' 25 25 -"+ B" 7 -*+ , 5 6 -+ min. + typ. max. Units +"0 ."- ."1 <"A A"4 #"+ ."4 -"* -"- #"4 1 ' B -"A * *"-+ *"<+ *. ? ? ? -."0 ."1 ."1 ."4+ ."+ B *#. <. +<. --. -0 *< F Inverse diode ? 8 %223 G %? -+. '@ 5 . @ 7 *+ -*+ , 7 *+ -*+ , 7 *+ -*+ , %? -+. '@ 7 *+ -*+ , &H& +... 'HI 5 . -"# -"# -"0 -"0 - ."0 < +"4 *<. <* -"- ."1 <"A # B ' I -0 F FWD ? 8 %223 G %? -+. '@ 5 . " 7 *+ -*+ , 7 *+ -*+ , 7 *+ -*+ , %? -+. '@ 7 -*+ , &H& +... 'HI 5 . -"# -"# - ."0 < +"4 *<. <* -"0 -"0 -"- ."1 <"A # -0 B ' I F Thermal characteristics 27; 27;M 27;?M %5J % M& ?LM ."-4 ."4 ."4 KHL KHL KHL 2; & .".40 KHL + + 9 9 4*+ Mechanical data GB GAL 3 3 N 3# 3+ 1 14-09-2005 RAA 4 *"+ © by SEMIKRON SKM 200GB126D ... Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic 2 14-09-2005 RAA © by SEMIKRON SKM 200GB126D ... Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Transient thermal impedance of IGBT Fig. 10 Transient thermal impedance of FWD Zthp(j-c) = f (tp); D = tp/tc = tp*f Zthp(j-c) = f (tp); D = tp/tc = tp*f Fig. 11 CAL diode forward characteristic Fig. 12 Typ. CAL diode peak reverse recovery current 3 14-09-2005 RAA © by SEMIKRON SKM 200GB126D ... Fig. 13 Typ. CAL diode recovered charge UL Recognized File no. E 63 532 Dimensions in mm M+# 5J M+A 5'D M +# This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 4 14-09-2005 RAA © by SEMIKRON