SLD322XT 0.5W High Power Laser Diode Description The SLD322XT is a high power, gain-guided laser diode produced by MOCVD method∗1. Compared to the SLD300 Series, this laser diode has a high brightness output with a doubled optical density which can be achived by QW-SCH structure∗2. Fine adjustment of the oscillation wavelength is possible by controlling the temperature using the built-in TE cooler (Peltier element). ∗1 MOCVD: Metal Organic Chemical Vapor Deposition ∗2 QW-SCH: Quantum Well Separate Confinement Heterostructure Features • High power Recommended optical power output: Po = 0.5W • Low operating current: Iop = 0.75A (Po = 0.5W) • Flat package with built-in photodiode, TE cooler, and thermistor Equivalent Circuit TE Cooler N P 1 2 3 No. Structure AlGaAs quantum well structure laser diode Operating Lifetime MTTF 10,000H (effective value) at Po = 0.5W, Tth = 25°C 0.55 2 15 –10 to +30 –40 to +85 4 PD 5 6 7 8 Pin Configuration (Top View) Applications • Solid state laser excitation • Medical use • Material processes • Measurement Absolute Maximum Ratings (Tth = 25°C) • Optical power output Po • Reverse voltage VR LD PD • Operating temperature (Tth) Topr • Storage temperature Tstg LD TH Function 1 TE cooler (negative) 2 Thermistor lead 1 3 Thermistor lead 2 4 Laser diode (anode) 5 Laser diode (cathode) 6 Photodiode (cathode) 7 Photodiode (anode) 8 TE cooler (positive) W V V °C °C Warranty This warranty period shall be 90 days after receipt of the product or 1,000 hours operation time whichever is shorter. Sony Quality Assurance Department shall analyze any product that fails during said warranty period, and if the analysis results show that the product failed due to material or manufacturing defects on the part of Sony, the product shall be replaced free of charge. Laser diodes naturally have differing lifetimes which follow a Weibull distribution. Special warranties are also available. 1 8 Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. –1– E93206B02-PS SLD322XT Electrical and Optical Characteristics Item (Tth: Thermistor temperature, Tth = 25°C) Symbol Min. Conditions Typ. Max. Unit 0.18 0.3 A Threshold current Ith Operating current Iop PO = 0.5W 0.75 1.2 A Operating voltage Wavelength∗ Vop PO = 0.5W 2.1 3.0 V λp PO = 0.5W 790 840 nm Monitor current Imon PO = 0.5W VR = 10V 0.15 0.8 3.0 mA 20 30 40 degree 4 9 17 degree ±100 µm ±3 degree Perpendicular Radiation angle Positional accuracy θ⊥ Parallel θ// Position ∆X, ∆Y Angle ∆φ⊥ PO = 0.5W PO = 0.5W Differential efficiency ηD PO = 0.5W Thermistor resistance Rth Tth = 25°C 0.5 0.9 W/A 10 kΩ ∗ Wavelength Selection Classification Type Wavelength (nm) SLD322XT-1 795 ± 5 SLD322XT-2 810 ± 10 SLD322XT-3 830 ± 10 Type Wavelength (nm) SLD322XT-21 798 ± 3 SLD322XT-24 807 ± 3 SLD322XT-25 810 ± 3 Handling Precautions Eye protection against laser beams The optical output of laser diodes ranges from several mW to 3W. However the optical power density of the laser beam at the diode chip reaches 1MW/cm2. Unlike gas lasers, since laser diode beams are divergent, uncollimated laser diode beams are fairly safe at a laser diode. For observing laser beams, ALWAYS use safety goggles that block infrared rays. Usage of IR scopes, IR cameras and fluorescent plates is also recommended for monitoring laser beams safely. Lens Laser diode Optical material Safety goggles for protection from laser beam IR fluorescent plate C ATC AP Optical boad Optical power output control device temperature control device –2– SLD322XT Example of Representative Characteristics Optical power output vs. Forward current characteristics Optical power output vs. Monitor current characteristics 1000 Po – Optical power output [mW] Po – Optical power output [mW] Tth = 0°C 800 Tth = 0°C Tth = 25°C 600 Tth = –10°C Tth = 30°C 400 200 0 200 400 600 800 500 Tth = –10°C Tth = 30°C 250 0 1000 Tth = 25°C 0 0.5 1.0 IF – Forward current [mA] Imon – Monitor current [mA] Threshold current vs. Temperature characteristics Power dependence of far field pattern (Parallel to junction) 1000 Radiation intensity (optional scale) 500 PO = 500mW PO = 400mW PO = 300mW PO = 200mW PO = 100mW 100 –10 0 10 20 30 –90 –60 –30 0 30 60 90 Tth – Thermistor temperature [°C] Angle [degree] Power dependence of far field pattern (Perpendicular to junction) Temperature dependence of far field pattern (Parallel to junction) –90 –60 –30 0 PO = 500mW Radiation intensity (optional scale) Tth = 25°C Radiation intensity (optional scale) Ith – Threshold current [mA] Tth = 25°C PO = 500mW PO = 400mW PO = 300mW PO = 200mW PO = 100mW 30 60 90 Tth = 25°C Tth = 10°C Tth = –5°C –90 Angle [degree] –60 –30 0 30 Angle [degree] –3– 60 90 SLD322XT Temperature dependence of far field pattern (Perpendicular to junction) Dependence of wavelength 820 Po = 500mW lp – Wavelength [nm] Radiation intensity (optional scale) PO = 500mW 810 800 Tth = 25°C Tth = 10°C Tth = –5°C –90 –60 –30 0 30 60 790 –10 90 0 Angle [degree] 10 20 30 Tth – Thermistor temperature [°C] Differential efficiency vs. Temperature characteristics Thermistor characteristics Rth – Thermistor resistance [kΩ] ηD – Differential efficiency [W/A] 50 1.0 0.5 0 –10 0 10 20 10 5 1 –10 0 10 20 30 40 50 60 70 30 Tth – Thermistor temperature [°C] Tth – Thermistor temperature [°C] TE cooler characteristics TE cooler characteristics 1 TE cooler characteristics 2 10 10 5 2.0A 5 4 1.5A 3 1.0A 5 1.5A 5 Q 5A 1. 0.5A 0. 1 5A 0 0 ∆T – Temperature difference [°C] 0 2 Q 0A 5A 100 3 VS 2. 5A 50 4 1.0A ∆T VS 1. 0. 0 2.0A 0A 1. 0 2.0A 2 ∆T 0.5A IT = 2.5A ∆T VS V 2.0A 1.5A 50 ∆T [°C] ∆T: Tc – Tth Tth: Thermistor temperature Tc: Case temperature –4– 1 2. 5A 100 0 VT – Pin voltage [V] IT = 2.5A Q – Absorbed heat [W] ∆T VS VT Tth = 25°C VT – Pin voltage [V] Q – Absorbed heat [W] Tc = 33°C SLD322XT Power dependence of spectrum 1.0 1.0 Tth = 25°C Po = 0.2W Tth = 25°C Po = 0.3W 0.8 Relative radiant intensity Relative radiant intensity 0.8 0.6 0.4 0.2 0.6 0.4 0.2 796 798 800 802 804 796 798 Wavelength [nm] 1.0 802 804 1.0 Tth = 25°C Po = 0.4W Tth = 25°C Po = 0.5W 0.8 Relative radiant intensity 0.8 Relative radiant intensity 800 Wavelength [nm] 0.6 0.4 0.2 0.6 0.4 0.2 796 798 800 802 804 796 Wavelength [nm] 798 800 802 Wavelength [nm] –5– 804 SLD322XT Temperature dependence of spectrum (Po = 0.5W) 1.0 1.0 Tth = 0°C Tth = –10°C 0.8 Relative radiant intensity Relative radiant intensity 0.8 0.6 0.4 0.4 0.2 0.2 785 0.6 790 795 800 805 810 785 815 790 795 800 805 1.0 Tth = 30°C 0.8 Relative radiant intensity 0.8 Relative radiant intensity 815 1.0 Tth = 25°C 0.6 0.4 0.2 785 810 Wavelength [nm] Wavelength [nm] 0.6 0.4 0.2 790 795 800 805 810 815 785 Wavelength [nm] 790 795 800 805 Wavelength [nm] –6– 810 815 SLD322XT Unit: mm M – 273(LO – 10) + 0.05 4 – Ø3.0 0 Window Glass 28.0 ± 0.5 + 2.0 8.0 – 1.0 Ø5.0 * 7.5 ± 0.1 15.0 ± 0.05 14.0 33.0 ± 0.05 4 – R1.2 ± 0.3 8 – Ø0.6 2.54 19.0 *16.5 ± 0.1 3.0 Reference Plane 11.35 ± 0.1 28.0 ± 0.5 7.5 ± 0.2 0.65MAX 38.0 ± 0.5 LD Chip 10.4 Package Outline *Distance between pilot hole and emittng area PACKAGE STRUCTURE SONY CODE M-273(LO-10) PACKAGE WEIGHT 43g EIAJ CODE JEDEC CODE –7– Sony Corporation