VISHAY SMA6F20A

New Product
SMA6F5.0A thru SMA6F20A
www.vishay.com
Vishay General Semiconductor
Surface Mount TRANSZORB® Transient Voltage Suppressors
FEATURES
• Very low profile - typical height of 0.95 mm
SlimSMATM
• Ideal for automated placement
• Uni-directional only
• Excellent clamping capability
Bottom View
Top View
• Peak pulse power:
- 600 W (10/1000 μs)
- 4 kW (8/20 μs)
• ESD capability: IEC 61000-4-2 level 4
- 15 kV (air)
- 8 kV (contact)
DO-221AC
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
PRIMARY CHARACTERISTICS
VWM
5.0 V to 20 V
PPPM (10 x 1000 μs)
600 W
PPPM (8 x 20 μs)
4000 W
PD at TM = 55 °C
6W
TJ max.
175 °C
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, and telecommunication.
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case: DO-221AC (SlimSMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable
J-STD-002 and JESD22-B102
M3 suffix meets JESD 201 class 1A whisker test
per
Polarity: Color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
Peak pulse power dissipation
Peak pulse current
Power dissipation
SYMBOL
with a 10/1000 μs waveform
with a 8/20 μs waveform
with a 10/1000 μs waveform
with a 8/20 μs waveform
PPPM (1)
IPPM (1)
VALUE
600
4000
See next table
TM = 55 °C
PD (2)
6
TA = 25 °C
PD (3)
1.0
TSTG
- 65 to + 175
TJ
- 55 to + 175
Storage temperature range
Operating junction temperature range
UNIT
W
A
W
°C
Notes
(1) Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2.
A
(2) Power dissipation mounted on infinite heatsink
(3) Power dissipation mounted on minimum recommended pad layout
Revision: 23-Nov-11
Document Number: 89458
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SMA6F5.0A thru SMA6F20A
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
SYMBOL
IF
PARAMETER
VWM
Stand-off voltage
VBR
Breakdown voltage
VC
Clamping voltage
ID
Leakage current at VWM
VWM
VBR
VC
ID
IPP
Peak pulse current
T
Voltage temperature coefficient
VF
Forward voltage drop
RD
Dynamic resistance
V
VF
IT
IPP
Zener Voltage Regulator
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
DEVICE
TYPE
DEVICE
MARKING
CODE
MAXIMUM
REVERSE
LEAKAGE
ID AT VWM (3)
BREAKDOWN
VOLTAGE
VBR AT IT (1)
MIN.
MAX.
V
VC AT IPP
μA
VC AT IPP
10/1000 μs
25 °C 85 °C
mA
RD (2)
RD (2)
T (3)
8/20 μs
MAX.
MAX.
MAX.
V
V
A

V
A

10-4/°C
SMA6F5.0A
6AE
6.40
7.07
10
150
375
5.0
9.2
68.0
0.031
13.4
298
0.021
5.7
SMA6F6.0A
6AG
6.70
7.41
10
600
1500
6.0
9.5
63.2
0.033
13.7
290
0.022
5.9
SMA6F6.5A
6AK
7.20
7.96
10
100
250
6.5
10.2
58.8
0.038
14.5
276
0.024
6.1
SMA6F7.5A
6AP
8.33
9.21
1
50
125
7.5
11.8
50.8
0.051
17.0
235
0.033
6.5
SMA6F8.0A
6AR
8.89
9.83
1
20
50
8.0
12.8
46.9
0.063
18.2
220
0.038
7.0
SMA6F8.5A
6AT
9.4
10.4
1
20
50
8.5
13.3
45.1
0.064
18.7
205
0.040
7.3
SMA6F10A
6AX
11.1
12.3
1
1.0
5.0
10
15.7
38.2
0.089
19.6
184
0.040
7.8
SMA6F11A
6AZ
12.2
13.5
1
1.0
5.0
11
17.2
34.8
0.107
21.5
172
0.047
8.1
SMA6F12A
6BE
13.3
14.7
1
0.2
1.0
12
18.8
31.9
0.128
23.5
157
0.056
8.3
SMA6F12AHD
6BF
13.2
14.3
1
0.2
1.0
12
18.5
32.4
0.130
22.9
157
0.055
8.4
SMA6F13A
6BG
14.4
15.9
1
0.2
1.0
13
20.4
29.4
0.153
23.9
147
0.064
8.4
SMA6F15A
6BM
16.7
18.5
1
0.2
1.0
15
23.6
25.4
0.201
27.7
123
0.075
8.8
SMA6F16A
6BP
17.8
19.7
1
0.2
1.0
16
25.2
23.8
0.229
29.5
119
0.082
8.8
SMA6F17A
6BR
18.9
20.9
1
0.2
1.0
17
26.7
22.5
0.259
31.4
111
0.095
9.0
SMA6F18A
6BT
20.0
22.1
1
0.2
1.0
18
28.3
21.2
0.292
33.2
102
0.109
9.2
SMA6F20A
6BV
22.2
24.5
1
0.2
1.0
20
31.4
19.1
0.361
36.8
93
0.132
9.4
Notes
(1) Pulse test: t  50 ms
p
(2) To calculate maximum clamping voltage at other surge currents, use following formula: V
CL max. = RD x IPP + VBR max.
(3) To calculate V
BR vs. junction temperature, use following formula: VBR at TJ = VBR at 25 °C x (1 + T x (TJ - 25))
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
(1)
Typical thermal resistance, junction to ambient
RJA
Typical thermal resistance, junction to mount
RJM(2)
VALUE
UNIT
150
°C/W
20
°C/W
Notes
(1) Mounted on minimum recommended pad layout
(2) Mounted on infinite heatsink
Revision: 23-Nov-11
Document Number: 89458
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SMA6F5.0A thru SMA6F20A
www.vishay.com
Vishay General Semiconductor
IMMUNITY TO STATIC ELECTRICAL DISCHARGE TO THE FOLLOWING STANDARDS
(TA = 25 °C unless otherwise noted)
STANDARD
TEST TYPE
Human body model (contact mode)
IEC 61000-4-2
Human body model (air discharge mode)
TEST CONDITIONS
SYMBOL
CLASS
C = 150 pF, R = 330 
VC
4
VALUE
> 8 kV
> 15 kV
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
SMA6F5.0A-M3/6A
0.032
6A
3500
7" diameter plastic tape and reel
SMA6F5.0A-M3/6B
0.032
6B
14 000
13" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
150
IPPM - Peak Pulse Current (% IRSM)
PPPM - Peak Pulse Power (kW)
100
10
1
Peak Value
IPPM
100
Half Value - IPP
IPPM
2
50
td = 1000 μs
td = 20 μs
td
0
0.1
1
10
100
1 000
0
10 000
td - Pulse Width (μs)
1.0
2.0
3.0
4.0
t - Time (ms)
Fig. 3 - Pulse Waveform
Fig. 1 - Peak Pulse Power Rating Curve
10 000
100
CJ - Junction Capacitance (pF)
Peak Pulse Power (PPP) or Current (IPP)
Derating in Percentage, %
TJ = 25 °C
Pulse Width (td) is
defined as the Point
Where the Peak Current
decays to 50 % of IPPM
tr = 10 μs
tr = 8 μs
75
50
25
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
Measured at Zero Bias
1000
Measured at Stand-off
Voltage, VWM
100
0
0
25
50
75
100
125
150
175
200
TJ - Initial Temperature (°C)
Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature
Revision: 23-Nov-11
5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20
VWM - Reverse Stand-Off Voltage (V)
Fig. 4 - Typical Junction Capacitance
Document Number: 89458
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SMA6F5.0A thru SMA6F20A
www.vishay.com
Vishay General Semiconductor
Transient Thermal Impedance (°C/W)
PD - Power Dissipation (W)
7
TA=TM, mounted on inifinite
heatsink
6
5
4
3
2
FR-4 Board, on Minimum
Recommended Pad Layout
1
0
0
25
50
75
100
125
150
175
200
1000
100
10
1
0.01
0.1
1
10
100
1000
tp - Pulse Duration (s)
TA - Ambient Temperature (°C)
Fig. 5 - Power Dissipation Derating Curve
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-221AC (SlimSMA)
Cathode Band
0.057 (1.45)
0.049 (1.25)
0.106 (2.70)
0.098 (2.50)
0.171 (4.35)
0.163 (4.15)
0.211 (5.35)
0.199 (5.05)
0.047 (1.20)
0.030 (0.75)
Typ.: 0.019 (0.48)
Mounting Pad Layout
0.039 (1.00)
0.035 (0.90)
0.060 (1.52)
MIN.
0.012 (0.30)
0.006 (0.15)
0.047 (1.20)
MIN.
Revision: 23-Nov-11
0.123 (3.12) MAX.
0.217 (5.52) REF.
0.047 (1.20)
MIN.
Document Number: 89458
4
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
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Revision: 12-Mar-12
1
Document Number: 91000