VISHAY SMBJ3V3

New Product
SMBJ3V3
Vishay General Semiconductor
Surface Mount TRANSZORB® Transient Voltage Supressors
FEATURES
• Uni-directional polarity only
• Peak pulse power: 600 W (10/1000 μs)
• Excellent clamping capability
• Very fast response time
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21 definition
DO-214AA (SMBJ)
TYPICAL APPLCIATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units specifically for
protecting 3.3 V supplied sensitive equipment against
transient overvoltages.
PRIMARY CHARACTERISTICS
VWM
3.3 V
PPPM
600 W
IFSM
60 A
TJ max.
175 °C
MECHANICAL DATA
Case: DO-214AA (SMBJ)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable
J-STD-002 and JESD22-B102
M3 suffix meets JESD 201 class 1A whisker test
per
Polarity: Color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Peak pulse power dissipation
PPPM (1)(2)
600
W
IPP
50
A
IPPM
200
A
IFSM (2)
60
A
Peak pulse current with a 10/1000 μs waveform (fig. 1)
Peak pulse current with a 8/20 μs waveform (fig. 1)
Non-repetitive peak forward surge current 8.3 ms single half sine-wave
Power dissipation on infinite heatsink, TL = 75 °C
PD
5
W
Operating junction and storage temperature range
TJ, TSTG
- 65 to + 175
°C
Notes
(1) Non-repetitive current pulse, per fig. 1
(2) Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
DEVICE
TYPE
SMBJ3V3
DEVICE
MARKING
CODE
KC
Document Number: 89419
Revision: 20-Apr-11
BREAKDOWN
VOLTAGE
VBR AT IT
MIN.
MAXIMUM REVERSE
LEAKAGE CURRENT
IR AT VWM
MAX.
MAXIMUM
CLAMPING
VOLTAGE
VC AT IPP
10/1000 μs
MAXIMUM
CLAMPING
VOLTAGE
VC AT IPPM
8/20 μs
TYPICAL
TEMP.
COEFFICIENT
OF VBR
TYPICAL
JUNCTION
CAPACITANCE
CJ AT 0 V
1 MHz
V
mA
μA
V
V
A
V
A
(10-4/°C)
pF
4.1
1.0
200
3.3
7.3
50
10.3
200
- 5.3
5200
For technical questions within your region, please contact one of the following:
www.vishay.com
[email protected], [email protected], [email protected]
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SMBJ3V3
Vishay General Semiconductor
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance, junction to lead
Typical thermal resistance, junction to ambient
SYMBOL
VALUE
UNIT
RJL (1)
20
°C/W
100
°C/W
RJA
(2)
Note
(1) Thermal resistance from junction to lead - mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal
(2) Thermal resistance from junction to ambient - mounted on the recommended PCB pad layout
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
SMBJ3V3-M3/52
0.096
52
750
7" diameter plastic tape and reel
SMBJ3V3-M3/5B
0.096
5B
3200
13" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
10
TJ = 25 °C
Pulse Width (td)
is defined as the Point
where the Peak Current
decays to 50 % of IPPM
tr = 10 µs
tr = 8 µs
Peak Value
IPPM
100
IR (TJ)/IR (TJ = 25 °C)
IPPM - Peak Pulse Current, % IRSM
150
Half Value - IPP
IPPM
2
50
td = 1000 µs
td = 20 µs
td
0.1
0
0
1.0
3.0
2.0
0
4.0
25
50
75
100
125
150
175
t - Time (ms)
TJ - Junction T emperature (°C)
Fig. 1 - Pulse Waveform
Fig. 3 - Relative Variation of Leakage Current vs.
Junction Temperature
10
Clamping Voltage (V)
10
PPPM - Peak Pulse Power (kW)
1
1
8
6
10/1000 µs
8/20 µs
4
0.1
0.01
0.1
1
10
0.1
1
10
100
1000
td - Pulse Width (ms)
IPP (A)
Fig. 2 - Peak Pulse Power Rating Curve
Fig. 4 - Clamping Voltage vs. Peak Pulse Current
(TJ initial = 25 °C)
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2
For technical questions within your region, please contact one of the following:
Document Number: 89419
[email protected], [email protected], [email protected]
Revision: 20-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SMBJ3V3
Vishay General Semiconductor
100
5000
IF - Peak Forward Current (A)
CJ - Junction Capacitance (pF)
5500
4500
4000
3500
3000
2500
TJ = 175 °C
10
TJ = 25 °C
1
0.1
2000
0
0.5
1
1.5
2
2.5
3
0
3.5
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
Reverse Voltage (V)
VF - Forward Voltage Drop (V)
Fig. 5 - Typical Junction Capacitance
Fig. 7 - Typical Peak Forward Voltage Drop vs. Peak
Forward Current
Transient Thermal Impedance (°C/W)
100
10
1
0.01
0.1
1
10
100
1000
t - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AA (SMB-J-Bend)
Mounting Pad Layout
Cathode Band
0.085 (2.159)
MAX.
0.086 (2.20)
0.155 (3.94)
0.130 (3.30)
0.077 (1.95)
0.086 (2.18)
MIN.
0.180 (4.57)
0.160 (4.06)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
MIN.
0.220 REF.
0.096 (2.44)
0.084 (2.13)
0.060 (1.52)
0.030 (0.76)
0.008 (0.2)
0 (0)
0.220 (5.59)
0.205 (5.21)
Document Number: 89419
Revision: 20-Apr-11
For technical questions within your region, please contact one of the following:
www.vishay.com
[email protected], [email protected], [email protected]
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
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Revision: 12-Mar-12
1
Document Number: 91000