INFINEON SMBD6100

Silicon Switching Diode Array
SMBD 6100
For high-speed switching applications
● Common cathode
●
Type
Marking
Ordering Code
(tape and reel)
SMBD 6100
s5B
Q68000-A8438
Pin Configuration
Package1)
SOT-23
Maximum Ratings
Parameter
Symbol
Values
Unit
Reverse voltage
VR
70
V
Peak reverse voltage
VRM
70
Forward current
IF
200
mA
Surge forward current, t = 1 µs
IFS
4.5
A
Total power dissipation, TS = 35 ˚C
Ptot
250
mW
Junction temperature
Tj
150
˚C
Storage temperature range
Tstg
– 65 … + 150
Junction - ambient2)
Rth JA
≤
600
Junction - soldering point
Rth JS
≤
460
Thermal Resistance
1)
2)
K/W
For detailed information see chapter Package Outlines.
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group
1
5.91
SMBD 6100
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
70
–
–
DC characteristics
Breakdown voltage
I(BR) = 100 µA
V(BR)
Forward voltage
IF = 1 mA
IF = 100 mA
VF
Reverse current
VR = 50 V
V
mV
550
850
–
–
700
1100
IR
–
–
100
nA
Diode capacitance
VR = 0, f = 1 MHz
CD
–
–
2.5
pF
Reverse recovery time
IF = 10 mA, IR = 10 mA, RL = 100 Ω
measured at IR = 1 mA
trr
–
–
15
ns
AC characteristics
Test circuit for reverse recovery time
Pulse generator: tp = 100 ns, D = 0.05
tr = 0.6 ns, Rj = 50 Ω
Oscillograph:
Semiconductor Group
2
R = 50 Ω
tr = 0.35 ns
C ≤ 1 pF
SMBD 6100
Forward current IF = f (TA*; TS)
* Package mounted on epoxy
Reverse current IR = f (TA)
Forward current IF = f (VF)
TA = 25 ˚C
Peak forward current IFM = f (t)
TA = 25 ˚C
Semiconductor Group
3
SMBD 6100
Forward voltage VF = f (TA)
Semiconductor Group
4