SN65HVD10, SN65HVD10Q, SN75HVD10 SN65HVD11, SN65HVD11Q, SN75HVD11 SN65HVD12, SN75HVD12 www.ti.com SLLS505M – FEBRUARY 2002 – REVISED JULY 2013 3.3-V RS-485 TRANSCEIVERS Check for Samples: SN65HVD10, SN65HVD10Q, SN75HVD10, SN65HVD11, SN65HVD11Q, SN75HVD11, SN65HVD12, SN75HVD12 FEATURES DESCRIPTION • • • The SN65HVD10, SN75HVD10, SN65HVD11, SN75HVD11, SN65HVD12, and SN75HVD12 combine a 3-state differential line driver and differential input line receiver that operate with a single 3.3-V power supply. They are designed for balanced transmission lines and meet or exceed ANSI standard TIA/EIA-485-A and ISO 8482:1993. These differential bus transceivers are monolithic integrated circuits designed for bidirectional data communication on multipoint bus-transmission lines. The drivers and receivers have active-high and active-low enables respectively, that can be externally connected together to function as direction control. Very low device standby supply current can be achieved by disabling the driver and the receiver. 1 • • • • • • • • Operates With a 3.3-V Supply Bus-Pin ESD Protection Exceeds 16 kV HBM 1/8 Unit-Load Option Available (Up to 256 Nodes on the Bus) Optional Driver Output Transition Times for Signaling Rates (1) of 1 Mbps, 10 Mbps, and 32 Mbps Meets or Exceeds the Requirements of ANSI TIA/EIA-485-A Bus-Pin Short Circuit Protection From –7 V to 12 V Low-Current Standby Mode . . . 1 µA Typical Open-Circuit, Idle-Bus, and Shorted-Bus Failsafe Receiver Thermal Shutdown Protection Glitch-Free Power-Up and Power-Down Protection for Hot-Plugging Applications SN75176 Footprint The driver differential outputs and receiver differential inputs connect internally to form a differential input/ output (I/O) bus port that is designed to offer minimum loading to the bus whenever the driver is disabled or VCC = 0. These parts feature wide positive and negative common-mode voltage ranges, making them suitable for party-line applications. APPLICATIONS • • • • • • • Digital Motor Control Utility Meters Chassis-to-Chassis Interconnects Electronic Security Stations Industrial Process Control Building Automation Point-of-Sale (POS) Terminals and Networks D OR P PACKAGE (TOP VIEW) R RE DE D 1 8 2 7 3 6 4 5 VCC B A GND 1 R 2 RE DE 3 6 (1) The signaling rate of a line is the number of voltage transitions that are made per second expressed in the units bps (bits per second). 4 A D 7 B 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2002–2013, Texas Instruments Incorporated SN65HVD10, SN65HVD10Q, SN75HVD10 SN65HVD11, SN65HVD11Q, SN75HVD11 SN65HVD12, SN75HVD12 SLLS505M – FEBRUARY 2002 – REVISED JULY 2013 www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. ORDERING INFORMATION SIGNALING RATE UNIT LOADS 32 Mbps 1/2 10 Mbps 1/8 (1) PACKAGE TA –40°C to 85°C SOIC MARKING SOIC (1) PDIP SN65HVD10D SN65HVD10P VP10 SN65HVD11D SN65HVD11P VP11 1 Mbps 1/8 SN65HVD12D SN65HVD12P VP12 32 Mbps 1/2 SN75HVD10D SN75HVD10P VN10 10 Mbps 1/8 SN75HVD11D SN75HVD11P VN11 –0°C to 70°C 1 Mbps 1/8 SN75HVD12D SN75HVD12P VN12 32 Mbps 1/2 SN65HVD10QD SN65HVD10QP VP10Q 10 Mbps 1/8 SN65HVD11QD SN65HVD11QP VP11Q –40°C to 125°C The D package is available taped and reeled. Add an R suffix to the part number (i.e., SN75HVD11DR). ABSOLUTE MAXIMUM RATINGS over operating free-air temperature range unless otherwise noted (1) (2) UNIT VCC Supply voltage range –0.3 V to 6 V Voltage range at A or B –9 V to 14 V Input voltage range at D, DE, R or RE –0.5 V to VCC + 0.5 V Voltage input range, transient pulse, A and B, through 100 Ω, see Figure 11 IO Receiver output current –11 mA to 11 mA Human body model (3) Electrostatic discharge Charged-device model (4) A, B, and GND ±16 kV All pins ±4 kV All pins charge Continuous total power dissipation (1) (2) (3) (4) (5) ±1 kV See Dissipation Rating Table Electrical Fast Transient/Burst (5) TJ –50 V to 50 V A, B, and GND ±4 kV Junction temperature 170°C Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. All voltage values, except differential I/O bus voltages, are with respect to network ground terminal. Tested in accordance with JEDEC Standard 22, Test Method A114-A and IEC 60749-26. Tested in accordance with JEDEC Standard 22, Test Method C101. Tested in accordance with IEC 61000-4-4. PACKAGE DISSIPATION RATINGS PACKAGE TA ≤ 25°C POWER RATING DERATING FACTOR (1) ABOVE TA = 25°C TA = 70°C POWER RATING TA = 85°C POWER RATING TA = 125°C POWER RATING D (2) 597 mW 4.97 mW/°C 373 mW 298 mW 100 mW D (3) 990 mW 8.26 mW/°C 620 mW 496 mW 165 mW P 1290 mW 10.75 mW/°C 806 mW 645 mW 215 mW (1) (2) (3) 2 This is the inverse of the junction-to-ambient thermal resistance when board-mounted and with no air flow. Tested in accordance with the Low-K thermal metric definitions of EIA/JESD51-3. Tested in accordance with the High-K thermal metric definitions of EIA/JESD51-7. Submit Documentation Feedback Copyright © 2002–2013, Texas Instruments Incorporated Product Folder Links: SN65HVD10 SN65HVD10Q SN75HVD10 SN65HVD11 SN65HVD11Q SN75HVD11 SN65HVD12 SN75HVD12 SN65HVD10, SN65HVD10Q, SN75HVD10 SN65HVD11, SN65HVD11Q, SN75HVD11 SN65HVD12, SN75HVD12 www.ti.com SLLS505M – FEBRUARY 2002 – REVISED JULY 2013 RECOMMENDED OPERATING CONDITIONS over operating free-air temperature range unless otherwise noted MIN VCC Supply voltage VI or VIC Voltage at any bus terminal (separately or common mode) VIH High-level input voltage VIL VID 12 VCC Low-level input voltage D, DE, RE 0 0.8 Differential input voltage Figure 7 –12 12 Driver –60 Low-level output current RL Differential load resistance CL Differential load capacitance Signaling rate Receiver UNIT 3.6 2 IOL (1) (2) 3 D, DE, RE High-level output current (2) MAX –7 (1) IOH TJ NOM V mA –8 Driver 60 Receiver 8 54 mA Ω 60 50 pF HVD10 32 HVD11 10 HVD12 1 Junction temperature 145 Mbps °C The algebraic convention, in which the least positive (most negative) limit is designated as minimum is used in this data sheet. See thermal characteristics table for information regarding this specification. DRIVER ELECTRICAL CHARACTERISTICS over recommended operating conditions unless otherwise noted PARAMETER VIK MIN TYP (1) MAX UNIT TEST CONDITIONS Input clamp voltage II = –18 mA –1.5 IO = 0 |VOD| Differential output voltage (2) Δ|VOD| Change in magnitude of differential output voltage VOC(PP) Peak-to-peak common-mode output voltage VOC(SS) Steady-state common-mode output voltage ΔVOC(SS) Change in steady-state common-mode output voltage IOZ High-impedance output current V 2 RL = 54 Ω, See Figure 1 1.5 Vtest = –7 V to 12 V, See Figure 2 1.5 See Figure 1 and Figure 2 VCC V –0.2 0.2 400 See Figure 3 V mV 1.4 2.5 V –0.0 5 0.05 V –100 0 0 100 See receiver input currents D μA II Input current IOS Short-circuit output current –7 V ≤ VO ≤ 12 V C(OD) Differential output capacitance VOD = 0.4 sin (4E6πt) + 0.5 V, DE at 0 V 16 RE at VCC, Receiver disabled and D & DE at VCC, driver enabled No load 9 15.5 mA RE at VCC, D at VCC, DE at 0 V, No load 1 5 μA 9 15.5 mA ICC DE Supply current –250 Receiver disabled and driver disabled (standby) RE at 0 V, Receiver enabled and D & DE at VCC, driver enabled No load (1) (2) 250 mA pF All typical values are at 25°C and with a 3.3-V supply. For TA > 85°C, VCC is ±5%. Copyright © 2002–2013, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: SN65HVD10 SN65HVD10Q SN75HVD10 SN65HVD11 SN65HVD11Q SN75HVD11 SN65HVD12 SN75HVD12 3 SN65HVD10, SN65HVD10Q, SN75HVD10 SN65HVD11, SN65HVD11Q, SN75HVD11 SN65HVD12, SN75HVD12 SLLS505M – FEBRUARY 2002 – REVISED JULY 2013 www.ti.com DRIVER SWITCHING CHARACTERISTICS over recommended operating conditions unless otherwise noted MIN TYP (1) MAX HVD10 5 8.5 16 HVD11 18 25 40 HVD12 135 200 300 HVD10 5 8.5 16 PARAMETER tPLH Propagation delay time, low-to-high-level output tPHL Propagation delay time, high-to-low-level output TEST CONDITIONS HVD11 18 25 40 HVD12 135 200 300 3 4.5 10 HVD10 tr Differential output signal rise time tf Differential output signal fall time tsk(p) tsk(pp) tPZH Pulse skew (|tPHL – tPLH|) (2) Part-to-part skew Propagation delay time, high-impedance-to-highlevel output HVD11 10 20 30 HVD12 100 170 300 HVD10 3 4.5 10 HVD11 10 20 30 HVD12 100 170 300 HVD10 1.5 HVD11 2.5 HVD12 7 HVD10 6 HVD11 11 HVD12 100 HVD10 31 HVD11 55 HVD12 HVD10 tPHZ tPZL Propagation delay time, high-level-to-highimpedance output Propagation delay time, high-impedance-to-lowlevel output Propagation delay time, low-level-to-highimpedance output RL = 110 Ω, RE at 0 V, See Figure 5 ns ns ns ns ns ns 25 55 HVD12 300 HVD10 26 HVD11 55 HVD12 300 RL = 110 Ω, RE at 0 V, See Figure 6 ns 300 HVD11 HVD10 tPLZ RL = 54 Ω, CL = 50 pF, See Figure 4 UNIT ns ns 26 HVD11 75 HVD12 400 ns tPZH Propagation delay time, standby-to-high-level output RL = 110 Ω, RE at 3 V, See Figure 5 6 μs tPZL Propagation delay time, standby-to-low-level output RL = 110 Ω, RE at 3 V, See Figure 6 6 μs (1) (2) 4 All typical values are at 25°C and with a 3.3-V supply. tsk(pp) is the magnitude of the difference in propagation delay times between any specified terminals of two devices when both devices operate with the same supply voltages, at the same temperature, and have identical packages and test circuits. Submit Documentation Feedback Copyright © 2002–2013, Texas Instruments Incorporated Product Folder Links: SN65HVD10 SN65HVD10Q SN75HVD10 SN65HVD11 SN65HVD11Q SN75HVD11 SN65HVD12 SN75HVD12 SN65HVD10, SN65HVD10Q, SN75HVD10 SN65HVD11, SN65HVD11Q, SN75HVD11 SN65HVD12, SN75HVD12 www.ti.com SLLS505M – FEBRUARY 2002 – REVISED JULY 2013 RECEIVER ELECTRICAL CHARACTERISTICS over recommended operating conditions unless otherwise noted PARAMETER TEST CONDITIONS VIT+ Positive-going input threshold voltage IO = –8 mA VIT– Negative-going input threshold voltage Vhys Hysteresis voltage (VIT+ - VIT-) VIK Enable-input clamp voltage II = –18 mA VOH High-level output voltage VID = 200 mV, IOH = –8 mA, See Figure 7 VOL Low-level output voltage VID = –200 mV, IOL = 8 mA, See Figure 7 IOZ High-impedance-state output current VO = 0 or VCC RE at VCC MIN IO = 8 mA –0.2 VA or VB = 12 V, VA or VB = –7 V, VCC = 0 V HVD11, HVD12, Other input at 0 V VCC = 0 V VA or VB = –7 V, HVD10, Other input at 0 V V VCC = 0 V 0.2 0.5 0.25 0.5 –0.2 –0.4 –0.15 Low-level input current, RE VIL = 0.8 V –30 CID Differential input capacitance VID = 0.4 sin (4E6πt) + 0.5 V, DE at 0 V μA 0.13 –0.4 IIL 1 0.06 –0.04 –30 V 0.11 –0.05 VIH = 2 V 0.4 0.05 –0.05 High-level input current, RE (1) mV V –0.1 IIH UNIT V –0.1 –1 VCC = 0 V VA or VB = –7 V Supply current –0.01 2.4 VA or VB = 12 V VA or VB = 12 V, ICC –0.065 –1.5 VA or VB = –7 V Bus input current MAX 35 VA or VB = 12 V II TYP (1) mA mA 0 μA 0 μA 15 pF RE at 0 V, D & DE at 0 V, No load Receiver enabled and driver disabled 4 8 mA RE at VCC, D at VCC, DE at 0 V, No load Receiver disabled and driver disabled (standby) 1 5 μA RE at 0 V, D & DE at VCC, No load Receiver enabled and driver enabled 9 15.5 mA All typical values are at 25°C and with a 3.3-V supply. Copyright © 2002–2013, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: SN65HVD10 SN65HVD10Q SN75HVD10 SN65HVD11 SN65HVD11Q SN75HVD11 SN65HVD12 SN75HVD12 5 SN65HVD10, SN65HVD10Q, SN75HVD10 SN65HVD11, SN65HVD11Q, SN75HVD11 SN65HVD12, SN75HVD12 SLLS505M – FEBRUARY 2002 – REVISED JULY 2013 www.ti.com RECEIVER SWITCHING CHARACTERISTICS over recommended operating conditions unless otherwise noted PARAMETER TEST CONDITIONS MIN TYP (1) MAX UNIT tPLH Propagation delay time, low-to-high-level output HVD10 12.5 20 25 tPHL Propagation delay time, high-to-low-level output HVD10 12.5 20 25 tPLH Propagation delay time, low-to-high-level output HVD11 HVD12 30 55 70 ns 30 55 70 ns tPHL Propagation delay time, high-to-low-level output tsk(p) Pulse skew (|tPHL – tPLH|) tsk(pp) (2) Part-to-part skew HVD11 HVD12 VID = –1.5 V to 1.5 V, CL = 15 pF, See Figure 8 HVD10 1.5 HVD11 4 HVD12 4 HVD10 8 HVD11 15 HVD12 tr Output signal rise time tf Output signal fall time (1) Output enable time to high level tPZL (1) Output enable time to low level tPHZ ns 2 5 1 2 5 ns 15 15 20 Output disable time from low level ns 15 tPZH (2) Propagation delay time, standby-to-high-level output tPZL (2) Propagation delay time, standby-to-low-level output (1) (2) 1 CL = 15 pF, DE at 3 V, See Figure 9 Output disable time from high level tPLZ ns 15 CL = 15 pF, See Figure 8 tPZH ns 6 CL = 15 pF, DE at 0, See Figure 10 6 μs All typical values are at 25°C and with a 3.3-V supply tsk(pp) is the magnitude of the difference in propagation delay times between any specified terminals of two devices when both devices operate with the same supply voltages, at the same temperature, and have identical packages and test circuits. THERMAL CHARACTERISTICS over operating free-air temperature range unless otherwise noted PARAMETER (1) TEST CONDITIONS MIN TYP θJA Junction−to−ambient thermal resistance (2) High−K board (3), No airflow No airflow (4) P pkg 93 θJB Junction−to−board thermal resistance High−K board D pkg 67 P pkg 57 θJC Junction−to−case thermal resistance D pkg 41 PD Device power dissipation See RL= 60 Ω, CL = 50 pF, DE at VCC, RE at 0 V, Input to D a 50% duty cycle square wave at indicated signaling rate 6 55 250 HVD11 (10 Mbps) 141 176 HVD12 (500 kbps) 133 161 D pkg –40 P pkg –40 Thermal shutdown junction temperature UNIT °C/W 198 No airflow (4) TJSD MAX HVD10 (32 Mbps) High−K board, No airflow Ambient air temperature (3) (4) 121 P pkg TA (1) (2) (4) D pkg mW 116 123 °C 165 See Application Information section for an explanation of these parameters. The intent of θJA specification is solely for a thermal performance comparison of one package to another in a standardized environment. This methodology is not meant to and will not predict the performance of a package in an application-specific environment. JSD51−7, High Effective Thermal Conductivity Test Board for Leaded Surface Mount Packages. JESD51−10, Test Boards for Through-Hole Perimeter Leaded Package Thermal Measurements. Submit Documentation Feedback Copyright © 2002–2013, Texas Instruments Incorporated Product Folder Links: SN65HVD10 SN65HVD10Q SN75HVD10 SN65HVD11 SN65HVD11Q SN75HVD11 SN65HVD12 SN75HVD12 SN65HVD10, SN65HVD10Q, SN75HVD10 SN65HVD11, SN65HVD11Q, SN75HVD11 SN65HVD12, SN75HVD12 www.ti.com SLLS505M – FEBRUARY 2002 – REVISED JULY 2013 PARAMETER MEASUREMENT INFORMATION VCC DE II 375 Ω ±1% VCC IOA A DE VOD 0 or 3 V B 54 Ω ±1% 0 or 3 V D A VOD IOB 60 Ω ±1% + _ −7 V < V(test) < 12 V B VI VOB 375 Ω ±1% VOA Figure 1. Driver VOD Test Circuit and Voltage and Current Definitions VCC DE Input D Figure 2. Driver VOD With Common-Mode Loading Test Circuit 27 Ω ± 1% A VA B VB VOC(PP) 27 Ω ± 1% B A CL = 50 pF ±20% VOC ∆VOC(SS) VOC CL Includes Fixture and Instrumentation Capacitance Input: PRR = 500 kHz, 50% Duty Cycle,tr<6ns, tf<6ns, ZO = 50 Ω Figure 3. Test Circuit and Definitions for the Driver Common-Mode Output Voltage 3V VCC DE D Input Generator VI 50 Ω VOD tPLH CL Includes Fixture and Instrumentation Capacitance RL = 54 Ω ± 1% B 1.5 V VI CL = 50 pF ±20% A 1.5 V tPHL 90% VOD ≈2V 90% 0V 10% ≈ –2 V 0V 10% tr tf Generator: PRR = 500 kHz, 50% Duty Cycle, tr <6 ns, tf <6 ns, Zo = 50 Ω Figure 4. Driver Switching Test Circuit and Voltage Waveforms A 3V D 3V S1 VO VI 1.5 V 1.5 V B DE Input Generator VI 50 Ω CL = 50 pF ±20% CL Includes Fixture and Instrumentation Capacitance RL = 110 Ω ± 1% 0.5 V 0V tPZH VOH VO 2.3 V tPHZ ≈0V Generator: PRR = 500 kHz, 50% Duty Cycle, tr <6 ns, tf <6 ns, Zo = 50 Ω Figure 5. Driver High-Level Enable and Disable Time Test Circuit and Voltage Waveforms Copyright © 2002–2013, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: SN65HVD10 SN65HVD10Q SN75HVD10 SN65HVD11 SN65HVD11Q SN75HVD11 SN65HVD12 SN75HVD12 7 SN65HVD10, SN65HVD10Q, SN75HVD10 SN65HVD11, SN65HVD11Q, SN75HVD11 SN65HVD12, SN75HVD12 SLLS505M – FEBRUARY 2002 – REVISED JULY 2013 www.ti.com PARAMETER MEASUREMENT INFORMATION (continued) 3V RL = 110 Ω ± 1% A 3V VI 1.5 V VI S1 D 1.5 V VO DE Input Generator ≈3V 50 Ω 0V B tPZL tPLZ ≈3V CL = 50 pF ±20% 0.5 V CL Includes Fixture and Instrumentation Capacitance VO 2.3 V VOL Generator: PRR = 500 kHz, 50% Duty Cycle, tr <6 ns, tf <6 ns, Zo = 50 Ω Figure 6. Driver Low-Level Output Enable and Disable Time Test Circuit and Voltage Waveforms IA VA + VB 2 VID VB VIC A R VA IO B VO IB Figure 7. Receiver Voltage and Current Definitions A Input Generator R VI 50 Ω 1.5 V 0V B VO CL = 15 pF ±20% RE CL Includes Fixture and Instrumentation Capacitance Generator: PRR = 500 kHz, 50% Duty Cycle, tr <6 ns, tf <6 ns, Zo = 50 Ω 3V 1.5 V VI 1.5 V 0V tPLH VO tPHL 90% 90% 1.5 V 10% tr VOH 1.5 V 10% V OL tf Figure 8. Receiver Switching Test Circuit and Voltage Waveforms 8 Submit Documentation Feedback Copyright © 2002–2013, Texas Instruments Incorporated Product Folder Links: SN65HVD10 SN65HVD10Q SN75HVD10 SN65HVD11 SN65HVD11Q SN75HVD11 SN65HVD12 SN75HVD12 SN65HVD10, SN65HVD10Q, SN75HVD10 SN65HVD11, SN65HVD11Q, SN75HVD11 SN65HVD12, SN75HVD12 www.ti.com SLLS505M – FEBRUARY 2002 – REVISED JULY 2013 PARAMETER MEASUREMENT INFORMATION (continued) 3V 3V A DE 0 V or 3 V R D VO B RE Input Generator VI A 1 kΩ ± 1% S1 CL = 15 pF ±20% B CL Includes Fixture and Instrumentation Capacitance 50 Ω Generator: PRR = 500 kHz, 50% Duty Cycle, tr <6 ns, tf <6 ns, Zo = 50 Ω 3V VI 1.5 V 1.5 V 0V tPZH(1) tPHZ VOH –0.5 V VOH D at 3 V S1 to B 1.5 V VO ≈0V tPZL(1) tPLZ ≈3V VO 1.5 V VOL +0.5 V D at 0 V S1 to A VOL Figure 9. Receiver Enable and Disable Time Test Circuit and Voltage Waveforms With Drivers Enabled Copyright © 2002–2013, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: SN65HVD10 SN65HVD10Q SN75HVD10 SN65HVD11 SN65HVD11Q SN75HVD11 SN65HVD12 SN75HVD12 9 SN65HVD10, SN65HVD10Q, SN75HVD10 SN65HVD11, SN65HVD11Q, SN75HVD11 SN65HVD12, SN75HVD12 SLLS505M – FEBRUARY 2002 – REVISED JULY 2013 www.ti.com PARAMETER MEASUREMENT INFORMATION (continued) 3V A 0 V or 1.5 V R B 1.5 V or 0 V RE Input Generator VI A 1 kΩ ± 1% VO S1 CL = 15 pF ±20% B CL Includes Fixture and Instrumentation Capacitance 50 Ω Generator: PRR = 100 kHz, 50% Duty Cycle, tr <6 ns, tf <6 ns, Zo = 50 Ω 3V 1.5 V VI 0V tPZH(2) VOH A at 1.5 V B at 0 V S1 to B 1.5 V VO GND tPZL(2) 3V 1.5 V VO A at 0 V B at 1.5 V S1 to A VOL Figure 10. Receiver Enable Time From Standby (Driver Disabled) 0 V or 3 V RE A R Pulse Generator, 15 µs Duration, 1% Duty Cycle tr, tf ≤ 100 ns 100 Ω ± 1% B D + _ DE 3 V or 0 V NOTE: This test is conducted to test survivability only. Data stability at the R output is not specified. Figure 11. Test Circuit, Transient Over Voltage Test 10 Submit Documentation Feedback Copyright © 2002–2013, Texas Instruments Incorporated Product Folder Links: SN65HVD10 SN65HVD10Q SN75HVD10 SN65HVD11 SN65HVD11Q SN75HVD11 SN65HVD12 SN75HVD12 SN65HVD10, SN65HVD10Q, SN75HVD10 SN65HVD11, SN65HVD11Q, SN75HVD11 SN65HVD12, SN75HVD12 www.ti.com SLLS505M – FEBRUARY 2002 – REVISED JULY 2013 PARAMETER MEASUREMENT INFORMATION (continued) FUNCTION TABLES Table 1. DRIVER (1) OUTPUTS (1) INPUT D ENABLE DE A B H H H L L H L H X L Z Z Open H H L H = high level; L = low level; Z = high impedance; X = irrelevant; ? = indeterminate Table 2. RECEIVER (1) DIFFERENTIAL INPUTS VID = VA – VB ENABLE RE OUTPUT R VID ≤ –0.2 V L L –0.2 V < VID < –0.01 V L ? −0.01 V ≤ VID L H X H Z Open Circuit L H Short circuit L H (1) H = high level; L = low level; Z = high impedance; X = irrelevant; ? = indeterminate Copyright © 2002–2013, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: SN65HVD10 SN65HVD10Q SN75HVD10 SN65HVD11 SN65HVD11Q SN75HVD11 SN65HVD12 SN75HVD12 11 SN65HVD10, SN65HVD10Q, SN75HVD10 SN65HVD11, SN65HVD11Q, SN75HVD11 SN65HVD12, SN75HVD12 SLLS505M – FEBRUARY 2002 – REVISED JULY 2013 www.ti.com EQUIVALENT INPUT AND OUTPUT SCHEMATIC DIAGRAMS D and RE Inputs DE Input VCC VCC 100 kΩ 1 kΩ 1 kΩ Input Input 100 kΩ 9V 9V A Input B Input VCC VCC 16 V 16 V R3 R1 R1 R3 Input Input 16 V R2 16 V A and B Outputs R2 R Output VCC VCC 16 V 5Ω Output Output 9V 16 V SN65HVD10 SN65HVD11 SN65HVD12 12 Submit Documentation Feedback R1/R2 9 kΩ 36 kΩ 36 kΩ R3 45 kΩ 180 kΩ 180 kΩ Copyright © 2002–2013, Texas Instruments Incorporated Product Folder Links: SN65HVD10 SN65HVD10Q SN75HVD10 SN65HVD11 SN65HVD11Q SN75HVD11 SN65HVD12 SN75HVD12 SN65HVD10, SN65HVD10Q, SN75HVD10 SN65HVD11, SN65HVD11Q, SN75HVD11 SN65HVD12, SN75HVD12 www.ti.com SLLS505M – FEBRUARY 2002 – REVISED JULY 2013 TYPICAL CHARACTERISTICS HVD10 RMS SUPPLY CURRENT vs SIGNALING RATE HVD11 RMS SUPPLY CURRENT vs SIGNALING RATE 70 RL = 54 Ω CL = 50 pF TA = 25°C RE at VCC DE at VCC I CC − RMS Supply Current − mA I CC − RMS Supply Current − mA 70 VCC = 3.6 V 60 50 VCC = 3 V VCC = 3.3 V 40 30 0 5 10 15 20 25 30 35 50 VCC = 3 V VCC = 3.3 V 40 2.5 Signaling Rate − Mbps Figure 12. 300 RL = 54 Ω CL = 50 pF 250 VCC = 3.6 V 60 VCC = 3.3 V 50 10 HVD10 BUS INPUT CURRENT vs BUS INPUT VOLTAGE I I − Bus Input Current − µ A I CC − RMS Supply Current − mA TA = 25°C RE at VCC DE at VCC 5 7.5 Signaling Rate − Mbps Figure 13. HVD12 RMS SUPPLY CURRENT vs SIGNALING RATE 70 VCC = 3.6 V 60 30 0 40 RL = 54 Ω CL = 50 pF TA = 25°C RE at VCC DE at VCC VCC = 3 V 40 TA = 25°C DE at 0 V 200 150 VCC = 0 V 100 50 0 VCC = 3.3 V −50 −100 −150 30 100 400 700 Signaling Rate − kbps Figure 14. Copyright © 2002–2013, Texas Instruments Incorporated 1000 −200 −7 −6−5 −4−3 −2−1 0 1 2 3 4 5 6 7 8 9 10 11 12 VI − Bus Input Voltage − V Figure 15. Submit Documentation Feedback Product Folder Links: SN65HVD10 SN65HVD10Q SN75HVD10 SN65HVD11 SN65HVD11Q SN75HVD11 SN65HVD12 SN75HVD12 13 SN65HVD10, SN65HVD10Q, SN75HVD10 SN65HVD11, SN65HVD11Q, SN75HVD11 SN65HVD12, SN75HVD12 SLLS505M – FEBRUARY 2002 – REVISED JULY 2013 www.ti.com TYPICAL CHARACTERISTICS (continued) HVD11 OR HVD12 BUS INPUT CURRENT vs BUS INPUT VOLTAGE HIGH-LEVEL OUTPUT CURRENT vs DRIVER HIGH-LEVEL OUTPUT VOLTAGE 150 90 I I − Bus Input Current − µ A 70 TA = 25°C DE at 0 V 60 50 IOH − High-Level Output Current − mA 80 VCC = 0 V 40 30 20 10 0 VCC = 3.3 V −10 −20 −30 TA = 25°C DE at VCC D at VCC VCC = 3.3 V 100 50 0 −50 −100 −40 −50 −150 −60 −7−6 −5 −4 −3 −2 −1 0 1 2 3 4 5 6 7 8 9 10 11 12 VI − Bus Input Voltage − V Figure 16. −200 −4 LOW-LEVEL OUTPUT CURRENT vs DRIVER LOW-LEVEL OUTPUT VOLTAGE 140 2.5 TA = 25°C DE at VCC D at 0 V VCC = 3.3 V 2.4 VOD − Driver Differential Output − V I OL − Low-Level Output Current − mA 160 120 100 80 60 40 20 14 2.3 VCC = 3.3 V DE at VCC D at VCC 2.2 2.1 2.0 1.9 1.8 1.7 1.6 0 −20 −4 6 DRIVER DIFFERENTIAL OUTPUT vs FREE-AIR TEMPERATURE 200 180 −2 0 2 4 VOH − Driver High-Level Output Voltage − V Figure 17. −2 0 2 4 6 VOL − Driver Low-Level Output Voltage − V Figure 18. Submit Documentation Feedback 8 1.5 −40 −15 10 35 60 TA − Free-Air Temperature − °C 85 Figure 19. Copyright © 2002–2013, Texas Instruments Incorporated Product Folder Links: SN65HVD10 SN65HVD10Q SN75HVD10 SN65HVD11 SN65HVD11Q SN75HVD11 SN65HVD12 SN75HVD12 SN65HVD10, SN65HVD10Q, SN75HVD10 SN65HVD11, SN65HVD11Q, SN75HVD11 SN65HVD12, SN75HVD12 www.ti.com SLLS505M – FEBRUARY 2002 – REVISED JULY 2013 TYPICAL CHARACTERISTICS (continued) ENABLE TIME vs COMMON-MODE VOLTAGE (SEE Figure 22) DRIVER OUTPUT CURRENT vs SUPPLY VOLTAGE 600 −40 TA = 25°C DE at VCC D at VCC RL = 54 Ω −30 500 HVD12 Enable Time − ns I O − Driver Output Current − mA −35 −25 −20 −15 400 HVD11 300 HVD10 200 −10 100 −5 0 0 0 0.50 1 1.50 2 2.50 3 -7 3.50 VCC − Supply Voltage − V -2 3 8 13 V(TEST) − Common-Mode Voltage − V Figure 20. Figure 21. 375 W ± 1% Y D 0 or 3 V -7 V < V(TEST) < 12 V VOD 60 W ± 1% Z DE 375 W ± 1% Input Generator V 50 W 50% tpZH(diff) VOD (high) 1.5 V 0V tpZL(diff) -1.5 V VOD (low) Figure 22. Driver Enable Time From DE to VOD The time tPZL(x) is the measure from DE to VOD(x). VOD is valid when it is greater than 1.5 V. Copyright © 2002–2013, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: SN65HVD10 SN65HVD10Q SN75HVD10 SN65HVD11 SN65HVD11Q SN75HVD11 SN65HVD12 SN75HVD12 15 SN65HVD10, SN65HVD10Q, SN75HVD10 SN65HVD11, SN65HVD11Q, SN75HVD11 SN65HVD12, SN75HVD12 SLLS505M – FEBRUARY 2002 – REVISED JULY 2013 www.ti.com APPLICATION INFORMATION RT Stub Device HVD10 HVD11 HVD12 RT Number of Devices on Bus 64 256 256 NOTE: The line should be terminated at both ends with its characteristic impedance (RT = ZO). Stub lengths off the main line should be kept as short as possible. Figure 23. Typical Application Circuit Driver Input Driver Output Receiver Input Receiver Output Figure 24. HVD12 Input and Output Through 2000 Feet of Cable An example application for the HVD12 is illustrated in Figure 23. Two HVD12 transceivers are used to communicate data through a 2000 foot (600 m) length of Commscope 5524 category 5e+ twisted pair cable. The bus is terminated at each end by a 100-Ω resistor, matching the cable characteristic impedance. Figure 24 illustrates operation at a signaling rate of 250 kbps. LOW-POWER STANDBY MODE When both the driver and receiver are disabled (DE low and RE high) the device is in standby mode. If the enable inputs are in this state for less than 60 ns, the device does not enter standby mode. This guards against inadvertently entering standby mode during driver/receiver enabling. Only when the enable inputs are held in this state for 300 ns or more, the device is assured to be in standby mode. In this low-power standby mode, most internal circuitry is powered down, and the supply current is typically less than 1 nA. When either the driver or the receiver is re-enabled, the internal circuitry becomes active. 16 Submit Documentation Feedback Copyright © 2002–2013, Texas Instruments Incorporated Product Folder Links: SN65HVD10 SN65HVD10Q SN75HVD10 SN65HVD11 SN65HVD11Q SN75HVD11 SN65HVD12 SN75HVD12 SN65HVD10, SN65HVD10Q, SN75HVD10 SN65HVD11, SN65HVD11Q, SN75HVD11 SN65HVD12, SN75HVD12 www.ti.com SLLS505M – FEBRUARY 2002 – REVISED JULY 2013 THERMAL CHARACTERISTICS OF IC PACKAGES θJA (Junction-to-Ambient Thermal Resistance) is defined as the difference in junction temperature to ambient temperature divided by the operating power. θJA is not a constant and is a strong function of: • the PCB design (50% variation) • altitude (20% variation) • device power (5% variation) θJA can be used to compare the thermal performance of packages if the specific test conditions are defined and used. Standardized testing includes specification of PCB construction, test chamber volume, sensor locations, and the thermal characteristics of holding fixtures. θJA is often misused when it is used to calculate junction temperatures for other installations. TI uses two test PCBs as defined by JEDEC specifications. The low-k board gives average in-use condition thermal performance, and it consists of a single copper trace layer 25 mm long and 2-oz thick. The high-k board gives best case in-use condition, and it consists of two 1-oz buried power planes with a single copper trace layer 25 mm long and 2-oz thick. A 4% to 50% difference in θJA can be measured between these two test cards. θJC (Junction-to-Case Thermal Resistance) is defined as difference in junction temperature to case divided by the operating power. It is measured by putting the mounted package up against a copper block cold plate to force heat to flow from die, through the mold compound into the copper block. θJC is a useful thermal characteristic when a heatsink is applied to package. It is not a useful characteristic to predict junction temperature because it provides pessimistic numbers if the case temperature is measured in a nonstandard system and junction temperatures are backed out. It can be used with θJB in 1-dimensional thermal simulation of a package system. θJB (Junction-to-Board Thermal Resistance) is defined as the difference in the junction temperature and the PCB temperature at the center of the package (closest to the die) when the PCB is clamped in a cold-plate structure. θJB is only defined for the high-k test card. θJB provides an overall thermal resistance between the die and the PCB. It includes a bit of the PCB thermal resistance (especially for BGAs with thermal balls) and can be used for simple 1-dimensional network analysis of package system, see Figure 25. Figure 25. Thermal Resistance Copyright © 2002–2013, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: SN65HVD10 SN65HVD10Q SN75HVD10 SN65HVD11 SN65HVD11Q SN75HVD11 SN65HVD12 SN75HVD12 17 SN65HVD10, SN65HVD10Q, SN75HVD10 SN65HVD11, SN65HVD11Q, SN75HVD11 SN65HVD12, SN75HVD12 SLLS505M – FEBRUARY 2002 – REVISED JULY 2013 www.ti.com REVISION HISTORY Changes from Revision J (February 2009) to Revision K • Page Added new section 'LOW-POWER STANDBY MODE', in the Application Information section ......................................... 16 Changes from Revision K (September 2011) to Revision L Page • Added TYP = –0.65 V to VIT+ ................................................................................................................................................ 5 • Added TYP = –0.1 V to VIT– .................................................................................................................................................. 5 Changes from Revision L (July 2013) to Revision M • 18 Page Changed the VIT+ TYP value From: –0.65 V To: –0.065 V ................................................................................................... 5 Submit Documentation Feedback Copyright © 2002–2013, Texas Instruments Incorporated Product Folder Links: SN65HVD10 SN65HVD10Q SN75HVD10 SN65HVD11 SN65HVD11Q SN75HVD11 SN65HVD12 SN75HVD12 PACKAGE OPTION ADDENDUM www.ti.com 19-Jul-2013 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan Lead/Ball Finish (2) MSL Peak Temp Op Temp (°C) Device Marking (3) (4/5) SN65HVD10D ACTIVE SOIC D 8 75 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 85 VP10 SN65HVD10DG4 ACTIVE SOIC D 8 75 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 85 VP10 SN65HVD10DR ACTIVE SOIC D 8 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 85 VP10 SN65HVD10DRG4 ACTIVE SOIC D 8 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 85 VP10 SN65HVD10P ACTIVE PDIP P 8 50 Pb-Free (RoHS) CU NIPDAU N / A for Pkg Type -40 to 85 65HVD10 SN65HVD10PE4 ACTIVE PDIP P 8 50 Pb-Free (RoHS) CU NIPDAU N / A for Pkg Type -40 to 85 65HVD10 SN65HVD10QD ACTIVE SOIC D 8 75 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 125 VP10Q SN65HVD10QDG4 ACTIVE SOIC D 8 75 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 125 VP10Q SN65HVD10QDR ACTIVE SOIC D 8 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 125 VP10Q SN65HVD10QDRG4 ACTIVE SOIC D 8 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 125 VP10Q SN65HVD11D ACTIVE SOIC D 8 75 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 85 VP11 SN65HVD11DG4 ACTIVE SOIC D 8 75 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 85 VP11 SN65HVD11DR ACTIVE SOIC D 8 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 85 VP11 SN65HVD11DRG4 ACTIVE SOIC D 8 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 85 VP11 SN65HVD11P ACTIVE PDIP P 8 50 Pb-Free (RoHS) CU NIPDAU N / A for Pkg Type -40 to 85 65HVD11 SN65HVD11PE4 ACTIVE PDIP P 8 50 Pb-Free (RoHS) CU NIPDAU N / A for Pkg Type -40 to 85 65HVD11 SN65HVD11QD ACTIVE SOIC D 8 75 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 125 VP11Q Addendum-Page 1 Samples PACKAGE OPTION ADDENDUM www.ti.com Orderable Device 19-Jul-2013 Status (1) Package Type Package Pins Package Drawing Qty Eco Plan Lead/Ball Finish (2) MSL Peak Temp Op Temp (°C) Device Marking (3) (4/5) SN65HVD11QDG4 ACTIVE SOIC D 8 75 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 125 VP11Q SN65HVD11QDR ACTIVE SOIC D 8 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 125 VP11Q SN65HVD11QDRG4 ACTIVE SOIC D 8 TBD Call TI Call TI -40 to 125 SN65HVD12D ACTIVE SOIC D 8 75 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 85 VP12 SN65HVD12DG4 ACTIVE SOIC D 8 75 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 85 VP12 SN65HVD12DR ACTIVE SOIC D 8 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 85 VP12 SN65HVD12DRG4 ACTIVE SOIC D 8 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 85 VP12 SN65HVD12P ACTIVE PDIP P 8 50 Pb-Free (RoHS) CU NIPDAU N / A for Pkg Type -40 to 85 65HVD12 SN65HVD12PE4 ACTIVE PDIP P 8 50 Pb-Free (RoHS) CU NIPDAU N / A for Pkg Type -40 to 85 65HVD12 SN75HVD10D ACTIVE SOIC D 8 75 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM 0 to 70 VN10 SN75HVD10DG4 ACTIVE SOIC D 8 75 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM 0 to 70 VN10 SN75HVD10DR ACTIVE SOIC D 8 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM 0 to 70 VN10 SN75HVD10DRG4 ACTIVE SOIC D 8 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM 0 to 70 VN10 SN75HVD10P ACTIVE PDIP P 8 50 Pb-Free (RoHS) CU NIPDAU N / A for Pkg Type 0 to 70 75HVD10 SN75HVD10PE4 ACTIVE PDIP P 8 50 Pb-Free (RoHS) CU NIPDAU N / A for Pkg Type 0 to 70 75HVD10 SN75HVD11D ACTIVE SOIC D 8 75 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM 0 to 70 VN11 SN75HVD11DG4 ACTIVE SOIC D 8 75 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM 0 to 70 VN11 SN75HVD11DR ACTIVE SOIC D 8 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM 0 to 70 VN11 Addendum-Page 2 Samples PACKAGE OPTION ADDENDUM www.ti.com Orderable Device 19-Jul-2013 Status (1) Package Type Package Pins Package Drawing Qty Eco Plan Lead/Ball Finish (2) MSL Peak Temp Op Temp (°C) Device Marking (3) (4/5) SN75HVD11DRG4 ACTIVE SOIC D 8 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM 0 to 70 VN11 SN75HVD12D ACTIVE SOIC D 8 75 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM 0 to 70 VN12 SN75HVD12DG4 ACTIVE SOIC D 8 75 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM 0 to 70 VN12 SN75HVD12DR ACTIVE SOIC D 8 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM 0 to 70 VN12 SN75HVD12DRG4 ACTIVE SOIC D 8 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM 0 to 70 VN12 SN75HVD12P ACTIVE PDIP P 8 50 Pb-Free (RoHS) CU NIPDAU N / A for Pkg Type 0 to 70 75HVD12 SN75HVD12PE4 ACTIVE PDIP P 8 50 Pb-Free (RoHS) CU NIPDAU N / A for Pkg Type 0 to 70 75HVD12 (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Device Marking for that device. Addendum-Page 3 Samples PACKAGE OPTION ADDENDUM www.ti.com 19-Jul-2013 Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis. OTHER QUALIFIED VERSIONS OF SN65HVD10, SN65HVD11, SN65HVD12 : • Enhanced Product: SN65HVD10-EP, SN65HVD12-EP NOTE: Qualified Version Definitions: • Enhanced Product - Supports Defense, Aerospace and Medical Applications Addendum-Page 4 PACKAGE MATERIALS INFORMATION www.ti.com 19-Jul-2013 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant SN65HVD10DR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1 SN65HVD10QDR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1 SN65HVD11DR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1 SN65HVD11QDR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1 SN65HVD12DR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1 SN75HVD10DR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1 SN75HVD11DR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1 SN75HVD12DR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1 Pack Materials-Page 1 PACKAGE MATERIALS INFORMATION www.ti.com 19-Jul-2013 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) SN65HVD10DR SOIC D 8 2500 340.5 338.1 20.6 SN65HVD10QDR SOIC D 8 2500 340.5 338.1 20.6 SN65HVD11DR SOIC D 8 2500 340.5 338.1 20.6 SN65HVD11QDR SOIC D 8 2500 340.5 338.1 20.6 SN65HVD12DR SOIC D 8 2500 340.5 338.1 20.6 SN75HVD10DR SOIC D 8 2500 340.5 338.1 20.6 SN75HVD11DR SOIC D 8 2500 340.5 338.1 20.6 SN75HVD12DR SOIC D 8 2500 340.5 338.1 20.6 Pack Materials-Page 2 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest issue. Buyers should obtain the latest relevant information before placing orders and should verify that such information is current and complete. All semiconductor products (also referred to herein as “components”) are sold subject to TI’s terms and conditions of sale supplied at the time of order acknowledgment. TI warrants performance of its components to the specifications applicable at the time of sale, in accordance with the warranty in TI’s terms and conditions of sale of semiconductor products. Testing and other quality control techniques are used to the extent TI deems necessary to support this warranty. Except where mandated by applicable law, testing of all parameters of each component is not necessarily performed. TI assumes no liability for applications assistance or the design of Buyers’ products. Buyers are responsible for their products and applications using TI components. To minimize the risks associated with Buyers’ products and applications, Buyers should provide adequate design and operating safeguards. TI does not warrant or represent that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other intellectual property right relating to any combination, machine, or process in which TI components or services are used. Information published by TI regarding third-party products or services does not constitute a license to use such products or services or a warranty or endorsement thereof. Use of such information may require a license from a third party under the patents or other intellectual property of the third party, or a license from TI under the patents or other intellectual property of TI. Reproduction of significant portions of TI information in TI data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. TI is not responsible or liable for such altered documentation. Information of third parties may be subject to additional restrictions. Resale of TI components or services with statements different from or beyond the parameters stated by TI for that component or service voids all express and any implied warranties for the associated TI component or service and is an unfair and deceptive business practice. TI is not responsible or liable for any such statements. Buyer acknowledges and agrees that it is solely responsible for compliance with all legal, regulatory and safety-related requirements concerning its products, and any use of TI components in its applications, notwithstanding any applications-related information or support that may be provided by TI. Buyer represents and agrees that it has all the necessary expertise to create and implement safeguards which anticipate dangerous consequences of failures, monitor failures and their consequences, lessen the likelihood of failures that might cause harm and take appropriate remedial actions. Buyer will fully indemnify TI and its representatives against any damages arising out of the use of any TI components in safety-critical applications. In some cases, TI components may be promoted specifically to facilitate safety-related applications. With such components, TI’s goal is to help enable customers to design and create their own end-product solutions that meet applicable functional safety standards and requirements. Nonetheless, such components are subject to these terms. No TI components are authorized for use in FDA Class III (or similar life-critical medical equipment) unless authorized officers of the parties have executed a special agreement specifically governing such use. Only those TI components which TI has specifically designated as military grade or “enhanced plastic” are designed and intended for use in military/aerospace applications or environments. Buyer acknowledges and agrees that any military or aerospace use of TI components which have not been so designated is solely at the Buyer's risk, and that Buyer is solely responsible for compliance with all legal and regulatory requirements in connection with such use. TI has specifically designated certain components as meeting ISO/TS16949 requirements, mainly for automotive use. In any case of use of non-designated products, TI will not be responsible for any failure to meet ISO/TS16949. Products Applications Audio www.ti.com/audio Automotive and Transportation www.ti.com/automotive Amplifiers amplifier.ti.com Communications and Telecom www.ti.com/communications Data Converters dataconverter.ti.com Computers and Peripherals www.ti.com/computers DLP® Products www.dlp.com Consumer Electronics www.ti.com/consumer-apps DSP dsp.ti.com Energy and Lighting www.ti.com/energy Clocks and Timers www.ti.com/clocks Industrial www.ti.com/industrial Interface interface.ti.com Medical www.ti.com/medical Logic logic.ti.com Security www.ti.com/security Power Mgmt power.ti.com Space, Avionics and Defense www.ti.com/space-avionics-defense Microcontrollers microcontroller.ti.com Video and Imaging www.ti.com/video RFID www.ti-rfid.com OMAP Applications Processors www.ti.com/omap TI E2E Community e2e.ti.com Wireless Connectivity www.ti.com/wirelessconnectivity Mailing Address: Texas Instruments, Post Office Box 655303, Dallas, Texas 75265 Copyright © 2013, Texas Instruments Incorporated