SPC4527 N & P Pair Enhancement Mode MOSFET DESCRIPTION The SPC4527 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed. APPLICATIONS z Power Management in Note book z Portable Equipment z Battery Powered System z DC/DC Converter z Load Switch z DSC z LCD Display inverter FEATURES N-Channel 40V/10A,RDS(ON)= 24mΩ@VGS= 10V 40V/ 8A,RDS(ON)= 30mΩ@VGS= 4.5V 40V/ 6A,RDS(ON)= 36mΩ@VGS= 2.5V P-Channel -40V/-10A,RDS(ON)= 38mΩ@VGS=- 10V -40V/- 8A,RDS(ON)= 46mΩ@VGS=- 4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOP – 8P package design PIN CONFIGURATION(SOP – 8P) PART MARKING 2009/02/15 Ver.1 Page 1 SPC4527 N & P Pair Enhancement Mode MOSFET PIN DESCRIPTION Pin Symbol Description 1 S1 Source 1 2 G1 Gate 1 3 S2 Source 2 4 G2 5 D2 Gate 2 Drain 2 6 D2 Drain 2 7 D1 Drain 1 8 D1 Drain 1 ORDERING INFORMATION Part Number Package SPC4527S8RGB SOP- 8P Part Marking SPC4527 ※ SPC4527S8RGB 13” Tape Reel ; Pb – Free ; Halogen – Free e ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Typical Parameter Symbol Unit N-Channel P-Channel Drain-Source Voltage VDSS 40 -40 V Gate –Source Voltage VGSS ±20 ±20 V 10.0 -10.0 8.0 -8.0 25 2.3 2.5 -25 -2.3 2.8 1.6 1.8 Continuous Drain Current(TJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current IDM Continuous Source Current(Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient 2009/02/15 Ver.1 ID IS PD TJ TSTG T ≤ 10sec Steady State RθJA A A W ℃ ℃ -55/150 -55/150 50 80 A 52 80 ℃/W Page 2 SPC4527 N & P Pair Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS ( NMOS ) (TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Min. Typ Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage V(BR)DSS VGS=0V,ID=250uA VGS(th) VDS=VGS,ID=250uA Gate Leakage Current IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current ID(on) VDS= 5V,VGS =4.5V Forward Transconductance gfs Diode Forward Voltage VSD IS=2.3A,VGS =0V RDS(on) 0.5 1.0 VDS=0V,VGS=±20V VDS=40V,VGS=0V VDS=40V,VGS=0V TJ=85℃ VGS= 10V,ID=10A VGS=4.5V,ID= 8A VGS=2.5V,ID= 6A VDS=15V,ID=6.2A Drain-Source On-Resistance 40 ±100 1 10 10 V nA uA A 0.020 0.023 0.027 13 0.025 0.030 0.036 0.8 1.2 10 14 Ω S V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-On Time Turn-Off Time 2009/02/15 Ver.1 VDS=20V,VGS=4.5V ID= 5A 3.2 VDS=20V,VGS=0V f=1MHz td(on) tr td(off) tf nC 2.8 VDD=20V,RL=4Ω ID≡5.0A,VGEN=10V RG=1Ω 850 pF 110 75 6 12 10 20 20 36 6 12 Page 3 nS SPC4527 N & P Pair Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS ( PMOS ) (TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Min. Typ Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage V(BR)DSS VGS=0V,ID=-250uA VGS(th) VDS=VGS,ID=-250uA Gate Leakage Current IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current ID(on) VDS= -5V,VGS =-4.5V Forward Transconductance gfs Diode Forward Voltage VSD IS=-2.3A,VGS =0V RDS(on) -0.8 -2.5 VDS=0V,VGS=±20V VDS=-36V,VGS=0V VDS=-36V,VGS=0V TJ=85℃ VGS=-10V,ID=-10A VGS=-4.5V,ID=- 8A VDS=-15V,ID=-5.7A Drain-Source On-Resistance -40 ±100 -1 -10 -10 V nA uA A 0.032 0.036 13 0.038 0.046 -0.8 -1.2 13 20 Ω S V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-On Time Turn-Off Time 2009/02/15 Ver.1 VDS=-20V,VGS=-4.5V ID= -5.0A 6.5 VDS=-20V,VGS=0V f=1MHz td(on) tr td(off) tf nC 4.5 VDD=-20V,RL=4Ω ID≡-5.0A,VGEN=-4.5V RG=1Ω 1100 pF 145 115 40 80 55 100 30 60 12 20 Page 4 nS SPC4527 N & P Pair Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2009/02/15 Ver.1 ( NMOS ) Page 5 SPC4527 N & P Pair Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2009/02/15 Ver.1 ( NMOS ) Page 6 SPC4527 N & P Pair Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2009/02/15 Ver.1 ( NMOS ) Page 7 SPC4527 N & P Pair Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2009/02/15 Ver.1 ( PMOS ) Page 8 SPC4527 N & P Pair Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2009/02/15 Ver.1 ( PMOS ) Page 9 SPC4527 N & P Pair Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2009/02/15 Ver.1 ( PMOS ) Page 10 SPC4527 N & P Pair Enhancement Mode MOSFET SOP- 8 PACKAGE OUTLINE 2009/02/15 Ver.1 Page 11 SPC4527 N & P Pair Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. ©The SYNC Power logo is a registered trademark of SYNC Power Corporation ©2004 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 9F-5, No.3-2, Park Street NanKang District (NKSP), Taipei, Taiwan 115 Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 ©http://www.syncpower.com 2009/02/15 Ver.1 Page 12