SPN5001 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN5001 is the N-Channel logic enhancement mode power field effect transistor which is produced with high voltage BiCMOS technology. This device is particularly suited for reducing the no load consumption in PC power, TV power and Adapter. APPLICATIONS Desk PC Power Supply AC adapter LCD TC Power Supply FEATURES 600V/27mA , RDS(ON)= 300Ω@VGS=10V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design PIN CONFIGURATION(SOT-23) PART MARKING 501YW YW: Date Code 2013/09/04 Ver.2 Page 1 SPN5001 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin Symbol Description 1 G Gate 2 S Source 3 D Drain ORDERING INFORMATION Part Number Package SPN5001S23RGB SOT-23 Part Marking 501YW ※ SPN5001S23RGB : Tape Reel ; Pb – Free ; Halogen – Free ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Symbol Typical Unit Drain-Source Voltage VDSS 600 V Gate –Source Voltage - Continuous VGSS ±20 V Continuous Drain Current TA=25℃ ID 27 mA Power Dissipation TA=25℃ PD 0.5 W TJ -55 ~ 150 ℃ Storage Temperature Range TSTG -55 ~ 150 ℃ Thermal Resistance-Junction to Ambient RθJA 250 ℃/W Operating Junction Temperature 2013/09/04 Ver.2 Page 2 SPN5001 N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Min. V(BR)DSS VGS=0V,ID=250uA 600 Typ Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage VGS(th) VDS=VGS,ID=250uA Gate Leakage Current IGSS Zero Gate Voltage Drain Current IDSS Drain-Source On-Resistance Forward Transconductance RDS(on) Gfs(1) 3.0 VDS=0V,VGS=±20V VDS=480V,VGS=0V TJ=25℃ VGS=10V,ID=16mA VDS = 10 V, ID =16mA V 4.5 ±100 nA 25 uA 300 Ω mS 28 Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-On Time Turn-Off Time 2013/09/04 Ver.2 VDD = 200 V, ID = 0.1 A, VGS = 10 V VDS = 25 V, f = 1 MHz, VGS = 0 td(off) tf 2.5 3.2 1.3 nC 0.8 8.8 12.5 16.2 7 10 13 5 7 9 pF 11.5 td(on) tr 1.8 VDS = 300 V, ID = 10m A RG = 3.3Ω VGS = 10.0 V RD = 30kΩ 14.5 ns 14 120 Page 3 SPN5001 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2013/09/04 Ver.2 Page 4 SPN5001 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2013/09/04 Ver.2 Page 5 SPN5001 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2013/09/04 Ver.2 Page 6 SPN5001 N-Channel Enhancement Mode MOSFET SOT-23 PACKAGE OUTLINE 2013/09/04 Ver.2 Page 7 SPN5001 N-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. ©The SYNC Power logo is a registered trademark of SYNC Power Corporation ©2004 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 7F-2, No.3-1, Park Street NanKang District (NKSP), Taipei, Taiwan, 115, R.O.C Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 ©http://www.syncpower.com 2013/09/04 Ver.2 Page 8