SYNC-POWER SPN80T10T220TGB

SPN80T10
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN80T10 is the N-Channel logic enhancement mode
power field effect transistor which is produced using super
high cell density DMOS trench technology. The SPN80T10
has been designed specifically to improve the overall
efficiency of DC/DC converters using either synchronous or
conventional switching PWM controllers. It has been
optimized for low gate charge, low RDS(ON) and fast
switching speed.
APPLICATIONS
 Powered System
 DC/DC Converter
 Load Switch
FEATURES
100V/85A, RDS(ON)=7.1mΩ@VGS= 10V

High density cell design for extremely low RDS (ON)

Exceptional on-resistance and maximum DC current
capability

TO-220 package design
PIN CONFIGURATION
TO-220

PART MARKING
2013/10/29 Ver.1
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SPN80T10
N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION
Pin
Symbol
Description
1
G
Gate
2
D
Drain
3
S
Source
ORDERING INFORMATION
Part Number
Package
Part
SPN80T10T220TGB
TO-220-3L
※ SPN80T10T220TGB : Tube ; Pb – Free ; Halogen - Free
Marking
SPN80T10
ABSOULTE MAXIMUM RATINGS
(TA=25℃ Unless otherwise noted)
Parameter
Symbol
Typical
Unit
Drain-Source Voltage
VDSS
100
V
Gate –Source Voltage
VGSS
±25
V
Continuous Drain Current(TJ=150℃)
TA=25℃
TA=70℃
ID
85
60
A
Pulsed Drain Current
IDM
300
A
Power Dissipation @ TA=25℃
PD
166
W
Operating Junction Temperature
TJ
-55/150
℃
Storage Temperature Range
TSTG
-55/150
℃
Thermal Resistance-Junction to Ambient
RθJA
62
℃/W
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SPN80T10
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Symbol
Conditions
Min.
V(BR)DSS VGS=0V,ID=250uA
100
Typ
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
VGS(th) VDS=VGS,ID=250uA
Gate Leakage Current
IGSS
Zero Gate Voltage Drain Current
IDSS
Drain-Source On-Resistance
2.0
VDS=0V,VGS=±25V
VDS=80V,VGS=0V
VDS=80V,VGS=0V
TJ=125℃
±100
25
gfs
VDS=10V,ID=40A
Diode Forward Voltage
VSD
IS=30A,VGS =0V
nA
uA
100
RDS(on) VGS= 10V,ID=40A
Forward Transconductance
V
4.0
7.1
mΩ
75
S
1.3
V
Dynamic
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-On Time
Turn-Off Time
2013/10/29 Ver.1
VDS=80V,VGS=10V
ID= 40A
VDS=25,VGS=0V
f=1MHz
td(off)
tf
180
20
nC
48
6000
9600
pF
550
300
21
td(on)
tr
115
VDD=50V,RL=1Ω
ID≡30A,VGEN=10V
RG=1.66Ω
58
nS
41
15
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SPN80T10
N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
2013/10/29 Ver.1
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SPN80T10
N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
2013/10/29 Ver.1
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SPN80T10
N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
2013/10/29 Ver.1
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SPN80T10
N-Channel Enhancement Mode MOSFET
TO-220 PACKAGE OUTLINE
2013/10/29 Ver.1
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SPN80T10
N-Channel Enhancement Mode MOSFET
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No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions
mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information
previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support
devices or systems without express written approval of SYNC Power Corporation.
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SYNC Power Corporation
7F-2, No.3-1, Park Street
NanKang District (NKSP), Taipei, Taiwan 115
Phone: 886-2-2655-8178
Fax: 886-2-2655-8468
©http://www.syncpower.com
2013/10/29 Ver.1
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