SPN80T10 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN80T10 is the N-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. The SPN80T10 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. APPLICATIONS Powered System DC/DC Converter Load Switch FEATURES 100V/85A, RDS(ON)=7.1mΩ@VGS= 10V High density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TO-220 package design PIN CONFIGURATION TO-220 PART MARKING 2013/10/29 Ver.1 Page 1 SPN80T10 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin Symbol Description 1 G Gate 2 D Drain 3 S Source ORDERING INFORMATION Part Number Package Part SPN80T10T220TGB TO-220-3L ※ SPN80T10T220TGB : Tube ; Pb – Free ; Halogen - Free Marking SPN80T10 ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Symbol Typical Unit Drain-Source Voltage VDSS 100 V Gate –Source Voltage VGSS ±25 V Continuous Drain Current(TJ=150℃) TA=25℃ TA=70℃ ID 85 60 A Pulsed Drain Current IDM 300 A Power Dissipation @ TA=25℃ PD 166 W Operating Junction Temperature TJ -55/150 ℃ Storage Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 62 ℃/W 2013/10/29 Ver.1 Page 2 SPN80T10 N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Min. V(BR)DSS VGS=0V,ID=250uA 100 Typ Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage VGS(th) VDS=VGS,ID=250uA Gate Leakage Current IGSS Zero Gate Voltage Drain Current IDSS Drain-Source On-Resistance 2.0 VDS=0V,VGS=±25V VDS=80V,VGS=0V VDS=80V,VGS=0V TJ=125℃ ±100 25 gfs VDS=10V,ID=40A Diode Forward Voltage VSD IS=30A,VGS =0V nA uA 100 RDS(on) VGS= 10V,ID=40A Forward Transconductance V 4.0 7.1 mΩ 75 S 1.3 V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-On Time Turn-Off Time 2013/10/29 Ver.1 VDS=80V,VGS=10V ID= 40A VDS=25,VGS=0V f=1MHz td(off) tf 180 20 nC 48 6000 9600 pF 550 300 21 td(on) tr 115 VDD=50V,RL=1Ω ID≡30A,VGEN=10V RG=1.66Ω 58 nS 41 15 Page 3 SPN80T10 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2013/10/29 Ver.1 Page 4 SPN80T10 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2013/10/29 Ver.1 Page 5 SPN80T10 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2013/10/29 Ver.1 Page 6 SPN80T10 N-Channel Enhancement Mode MOSFET TO-220 PACKAGE OUTLINE 2013/10/29 Ver.1 Page 7 SPN80T10 N-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. ©The SYNC Power logo is a registered trademark of SYNC Power Corporation ©2004 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 7F-2, No.3-1, Park Street NanKang District (NKSP), Taipei, Taiwan 115 Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 ©http://www.syncpower.com 2013/10/29 Ver.1 Page 8