SRD 00231Z Ternary PIN Photodiode in TO-Package, Central Pin • • • • • • • • • • • • InGaAs/InP − PIN-photodiode Designed for application in fiber-optic communication systems Sensitive receiver for the 2nd and 3rd optical window (1300nm and 1500nm) Suitable for bit rates up to 2.5 Gbit/s Low junction and low package capacitance Fast switching times Low dark current Low noise High reverse-current stability by planar structure Hermetically sealed 3-pin metal case with central pin Type Ordering Code Connector/Flange SRD 00231Z Q62702-Pxxxx TO with central pin Maximum Ratings Parameter Symbol Values Unit Forward current IF 10 mA Reverse voltage VR 20 V Operating and storage temperature TA; Tstg − 40 … + 85 °C Max. radiant power into the opt. port (VR = 5 V) Φport 1 mW Soldering time (wave / dip soldering), distance between solder point and base plate ≥ 2 mm, 260 °C ts 10 s Semiconductor Group 1 02.95 SRD 00231Z Characteristics All optical data refer to an optimally coupled 10/125 µm SM fiber. Parameter Symbol Values Unit Spectral sensitivity λ = 1300 nm, VR = 5 V Sλ 0.9 (≥ 0.8) A/W Change in spectral sensitivity in operating temperature range ∆Sλ < 0.2 %/K Rise and fall time RL = 50 Ω, VR = 5 V, λ = 1310 nm, Φport = 100 µW tr; tf 0.25 (≤ 0.4) ns Total capacitance VR = 5 V,Φport = 0 f = 1 MHz C5 0.7 (≤ 0.9) pF Dark current VR = 5 V, TA = 85 °C, Φport = 0 ID 1 (≤ 50) nA Capacitance C = f(VR) Φport = 0, f = 1 MHz Relative Spectral Sensitivity VR = 5 V 10 1 0,9 Sensitivity in A/W Capacitance in pF 0,8 1 0,7 0,6 0,5 0,4 0,3 0,2 0,1 0 800 0.1 0.1 1 10 100 1600 W avelength in nm Reverse Bias in V Semiconductor Group 1200 2 2000 SRD 00231Z Dark Current IR = f(VR) IF = f(VF) Dark Current IR = f(TA) Φport = 0, VR = 5 V 10 100 Dark Current in nA Dark Current in nA 10 1 0.1 0.01 1 0.1 0.01 0.001 -50 0.001 0 5 10 15 20 50 100 Ambient Temperature in °C Reverse Bias in V Package Outlines (Dimensions in mm) SRD 00231Z Semiconductor Group 0 3