TOSHIBA SSM3K310T

SSM3K7002F
TOSHIBA Field-Effect Transistor
Silicon N Channel MOS Type
SSM3K7002F
High-Speed Switching Applications
Analog Switch Applications
Unit: mm
+0.5
2.5-0.3
2.9±0.2
: Ron = 3.2 Ω (max) (@VGS = 5 V)
: Ron = 3.0 Ω (max) (@VGS = 10 V)
Rating
Unit
Drain-source voltage
VDS
60
V
Gate-source voltage
VGSS
± 20
V
DC
ID
200
Pulse
IDP
800
Drain power dissipation (Ta = 25°C)
PD
200
mW
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Drain current
3
0~0.1
Symbol
2
+0.2
1.1-0.1
Characteristics
1
0.3
Absolute Maximum Ratings (Ta = 25°C)
+0.1
0.4-0.05
+0.25
1.5-0.15
: Ron = 3.3 Ω (max) (@VGS = 4.5 V)
+0.1
0.16-0.06
Low ON-resistance
1.9
Small package
•
0.95 0.95
•
mA
1.Gate
2.Source
3.Drain
S-MINI
JEDEC
TO-236MOD
JEITA
SC-59
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
TOSHIBA
2-3F1F
temperature, etc.) may cause this product to decrease in the
Weight: 0.012 g (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Drain-source breakdown voltage
Drain cutoff current
Gate threshold voltage
Forward transfer admittance
Drain-source ON-resistance
Symbol
Min
Typ
Max
Unit
VGS = ± 20 V, VDS = 0
⎯
⎯
± 10
μA
V (BR) DSS
ID = 0.1 mA, VGS = 0
60
⎯
⎯
V
IDSS
VDS = 60 V, VGS = 0
⎯
⎯
1
μA
Vth
VDS = 10 V, ID = 0.25 mA
1.0
⎯
2.5
V
⎪Yfs⎪
VDS = 10 V, ID = 200 mA
170
⎯
⎯
mS
ID = 500 mA, VGS = 10 V
⎯
2.0
3.0
ID = 100 mA, VGS = 5 V
⎯
2.1
3.2
IGSS
RDS (ON)
Test Condition
ID = 100 mA, VGS = 4.5 V
Input capacitance
Ciss
Reverse transfer capacitance
Crss
Output capacitance
Coss
Switching time
Turn-on delay time
td(on)
Turn-off delay time
td(off)
VDS = 25 V, VGS = 0, f = 1 MHz
VDD = 30 V , ID = 200 mA ,
VGS = 0 to 10 V
1
Ω
⎯
2.2
3.3
⎯
17
⎯
pF
⎯
1.4
⎯
pF
⎯
5.8
⎯
pF
⎯
2.4
4.0
⎯
26
40
ns
2007-11-01
SSM3K7002F
Switching Time Test Circuit
(a) Test circuit
OUT
10 V
(b) VIN
90 %
IN
50 Ω
10 V
0
10 μs
VDD = 30 V
Duty <
= 1%
VIN: tr, tf < 2 ns
(Zout = 50 Ω)
Common Source
Ta = 25 °C
Marking
10 %
0V
RL
VDD
VDD
(c) VOUT
10 %
90 %
VDS (ON)
tr
tf
td(on)
td(off)
Equivalent Circuit (top view)
3
3
NC
1
2
1
2
Precaution
Vth can be expressed as the voltage between gate and source when the low operating current value is ID= 0.25 mA
for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth, and VGS (off) requires a
lower voltage than Vth.
(The relationship can be established as follows: VGS (off) < Vth < VGS (on). )
Take this into consideration when using the device.
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
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2007-11-01
SSM3K7002F
ID - VDS
ID - VGS
1000
1000
Common Source
Ta = 25 °C
900
100
7
700
10
600
3.3
500
3.0
400
2.7
300
2.5
200
100
25 °C
1
- 25 °C
0.1
0.01
0
0.5
1
1.5
Drain-Source Voltage VDS (V)
0
2
RDS(ON) - ID
5
Common Source
Ta = 25 °C
4
3
VGS = 4.5 V
1
5.0 V
2
10 V
1
0
2
3
Gate-Source Voltage VGS (V)
4
5
RDS(ON) - VGS
5
D ra in -S o u rce O N -R e sista n ce
R D S (ON ) (Ω )
D ra in -S o u rce O N -R e sista n ce
R D S (ON ) (Ω )
Ta = 100 °C
10
VGS = 2.3 V
0
Common Source
ID = 100 mA
4
Ta = 100 °C
3
25 °C
2
- 25 °C
1
0
10
100
Drain Current ID (mA)
1000
0
2
RDS(ON) - Ta
5
4
6
Gate-Source Voltage VGS (V)
8
10
Vth - Ta
2
G a te Th re sh o ld V o lta g e V th (V )
Common Source
D ra in -S o u rce ON -R e sista n ce
R D S (O N ) (Ω )
Common Source
VDS = 10 V
4.5 4.0
D ra in C u rre n t ID (m A )
D ra in C u rre n t ID (m A )
800
5
4
VGS = 4.5 V , ID = 100 mA
3
2
5.0 V , 100 mA 10 V , 500 mA
1
0
Common Source
ID = 0.25 mA
VDS = 10 V
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
-25
0
25
50
75
100
Ambient Temperature Ta (°C)
125
150
-25
3
0
25
50
75
100
Ambient Temperature Ta (°C)
125
150
2007-11-01
SSM3K7002F
|Yfs| - ID
IDR - VDS
1000
Common source
VDS = 10 V
Ta = 25 °C
D ra in R e ve rse C u rre n t ID R (m A )
Fo rw a rd Tra n sfe r A d m itta n ce
|Y fs| (m S )
1000
100
10
800
700
D
600
G
IDR
500
400
S
300
200
100
0
10
100
Drain Current ID (mA)
1000
0
C - VDS
-0.2
-0.4 -0.6
-0.8
-1
Drain-Source Voltage VDS (V)
Common Source
VGS = 0 V
f = 1 MHz
Ta = 25 °C
Ciss
10
Coss
-1.2
-1.4
t - ID
10000
S w itch in g Tim e t (n s)
100
C a p a cita n ce C (p F)
Common Source
VGS = 0 V
Ta = 25 °C
900
Common Source
VDD = 30 V
VGS = 0 to 10 V
Ta = 25 °C
tf
1000
100
td(off)
10
td(on)
tr
Crss
1
1
0.1
1
10
Drain-Source Voltage VDS (V)
100
1
10
100
Drain Current ID (mA)
1000
PD - Ta
D ra in P o w e r D issip a tio n P D (m W )
250
200
150
100
50
0
0
20
40
60
80
100 120
Ambient Temperature Ta (°C)
140
160
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2007-11-01
SSM3K7002F
RESTRICTIONS ON PRODUCT USE
20070701-EN GENERAL
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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2007-11-01