SSM9960(G)H,J
N-CHANNEL ENHANCEMENT-MODE POWER MOSFET
Low gate-charge
D
Simple drive requirement
Fast switching
BV DSS
40V
R DS(ON)
16mΩ
42A
ID
G
S
Description
G D
S
The SSM9960H is in a TO-252 package, which is widely used for
commercial and industrial surface mount applications, and is well suited
for low voltage applications such as DC/DC converters. The through-hole
version, the SSM9960J in TO-251, is available for low-footprint vertical
G
This device is available with Pb-free lead finish
(second-level interconnect) as SSM9960GH or SSM9960GJ.
D
S
TO-252 (H)
TO-251 (J)
Absolute Maximum Ratings
Parameter
Symbol
Rating
Units
VDS
Drain-Source Voltage
40
V
VGS
Gate-Source Voltage
± 20
V
ID @ TA=25°C
Continuous Drain Current, VGS @ 10V
42
A
ID @ TA=100°C
Continuous Drain Current, VGS @ 10V
26
A
195
A
1
IDM
Pulsed Drain Current
PD @ TA=25°C
Total Power Dissipation
45
W
Linear Derating Factor
0.36
W/°C
TSTG
Storage Temperature Range
-55 to 150
°C
TJ
Operating Junction Temperature Range
-55 to 150
°C
Thermal Data
Symbol
Parameter
Value
Unit
Rthj-c
Thermal Resistance Junction-case
Max.
2.8
°C/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
110
°C/W
11/16/2004 Rev.2.1
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SSM9960(G)H,J
Electrical Characteristics @ Tj=25oC (unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
40
-
BVDSS
Drain-Source Breakdown Voltage
∆ BV DSS/∆ Tj
Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA
-
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=20A
-
VGS=4.5V, ID=18A
-
V
-
V/°C
-
16
mΩ
-
-
25
mΩ
VDS=VGS, ID=250uA
1
-
3
V
VDS=10V, ID=20A
-
30
-
S
VDS=40V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=150 C)
VDS=32V ,VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS= ± 20V
-
-
±100
nA
ID=20A
-
18
-
nC
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
o
IDSS
Drain-Source Leakage Current (Tj=25 C)
o
IGSS
2
VGS=0V, ID=250uA
Max. Units
0.032
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=20V
-
6
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
12
-
nC
VDS=20V
-
9
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=20A
-
110
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω , VGS=10V
-
23
-
ns
tf
Fall Time
RD=1Ω
10
-
ns
Ciss
Input Capacitance
VGS=0V
-
1500
-
pF
Coss
Output Capacitance
VDS=25V
-
250
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
180
-
pF
Min.
Typ.
IS=45A, VGS=0V
-
-
1.3
V
ns
nC
-
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=20A, VGS=0V
-
22
-
Qrr
Reverse Recovery Charge
dI/dt = 100A/us
-
27.4
-
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
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SSM9960(G)H,J
200
140
10.0V
T C =150 o C
120
10V
8.0V
150
8.0V
ID , Drain Current (A)
ID , Drain Current (A)
T C =25 o C
6.0V
100
50
100
80
6.0V
60
40
V G =4.0V
V G =4.0V
20
0
0
0.0
1.5
3.0
4.5
0
1
Fig 1. Typical Output Characteristics
3
4
5
6
Fig 2. Typical Output Characteristics
1.80
60
I D =20A
I D =20A
T C =25°C
Normalized RDS(ON)
1.60
40
RDS(ON) (mΩ )
2
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
20
V G =10V
1.40
1.20
1.00
0.80
0.60
0
0
4
8
12
-50
16
0
V GS , Gate-to-Source Voltage (V)
1000
2.5
100
2
T j =150 o C
100
150
Fig 4. Normalized On-Resistance
vs. Junction Temperature
VGS(th) (V)
IS(A)
Fig 3. On-Resistance vs. Gate Voltage
10
50
T j , Junction Temperature ( o C)
o
T j =25 C
1.5
1
1
0.5
0
-50
0.0
0.4
0.8
1.2
100
175
o
T j , Junction Temperature ( C )
V SD (V)
Fig 5. Forward Characteristic of
Reverse Diode
11/16/2004 Rev.2.1
25
1.6
Fig 6. Gate Threshold Voltage vs.
Junction Temperature
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SSM9960(G)H,J
12
I D =20A
Ciss
V DS =12V
V DS =16V
V DS =20V
10
8
1000
C (pF)
VGS , Gate to Source Voltage (V)
f=1.0MHz
10000
14
6
Coss
Crss
100
4
2
10
0
0
10
20
30
1
40
8
15
22
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
100
ID (A)
10us
100us
10
1ms
T c =25 o C
Single Pulse
10ms
100ms
1
Normalized Thermal Response (Rthjc)
1
DUTY=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
PDM
t
Duty factor = t/T
Peak Tj = PDM x Rthjc + Tc
T
0.001
0.1
1
10
100
0.0001
0.001
0.01
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
RD
VDS
TO THE
D
0.5x RATED VDS
G
0.5 x RATED VDS
RG
G
S
VGS
+
+
S
10V
VGS
-
1~ 3 mA
IG
Fig 11. Switching Time Circuit
11/16/2004 Rev.2.1
OSCILLOSCOPE
D
TO THE
OSCILLOSCOPE
VDS
ID
Fig 12. Gate Charge Circuit
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SSM9960(G)H,J
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
guarantee or warranty, express or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
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