SSM70L02H,J
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Low Gate Charge
D
Simple Drive Requirement
Fast Switching
G
BV DSS
25V
R DS(ON)
9mΩ
ID
66A
S
Description
G D
S
The SSM70L02H is in the TO-252 package, which is widely preferred for
commercial and industrial surface mount applications, and is well suited for
low-voltage applications such as DC/DC converters. The through-hole
version (SSM70L02J) is available for low-footprint applications.
G
D
S
TO-252(H)
TO-251(J)
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
25
V
VGS
Gate-Source Voltage
± 20
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
66
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
42
A
1
IDM
Pulsed Drain Current
210
A
PD@TC=25℃
Total Power Dissipation
66
W
Linear Derating Factor
0.53
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Unit
Rthj-case
Thermal Resistance Junction-case
Max.
1.9
℃/W
Rthj-amb
Thermal Resistance Junction-ambient
Max.
110
℃/W
Rev.2.01 6/26/2003
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SSM70L02H,J
Electrical Characteristics @ Tj=25oC (unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
25
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.037
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=33A
-
-
9
mΩ
VGS=4.5V, ID=20A
-
-
17
mΩ
VDS=VGS, ID=250uA
1
-
3
V
VDS=10V, ID=33A
-
25
-
S
VDS=25V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=150 C)
VDS=20V, VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS= ± 20V
-
-
±100
nA
ID=33A
-
23
-
nC
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
VGS=0V, ID=250uA
o
IDSS
Drain-Source Leakage Current (Tj=25 C)
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=20V
-
3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=5V
-
17
-
nC
VDS=15V
-
8.8
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=33A
-
95
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
24
-
ns
tf
Fall Time
RD=0.45Ω
-
14
-
ns
Ciss
Input Capacitance
VGS=0V
-
790
-
pF
Coss
Output Capacitance
VDS=25V
-
475
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
195
-
pF
Min.
Typ.
-
-
66
A
-
-
210
A
-
-
1.26
V
Source-Drain Diode
Symbol
IS
ISM
VSD
Parameter
Test Conditions
VD=VG=0V , VS=1.26V
Continuous Source Current ( Body Diode )
Pulsed Source Current ( Body Diode )
2
Forward On Voltage
1
Tj=25℃, IS=66A, VGS=0V
Max. Units
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
Rev.2.01 6/26/2003
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SSM70L02H,J
250
140
o
V G =10V
T C =25 C
V G =10V
T C =150 o C
120
V G =8.0V
V G =6.0V
200
ID , Drain Current (A)
ID , Drain Current (A)
V G =8.0V
150
V G =6.0V
100
V G =5.0V
100
80
V G =5.0V
60
V G =4.0V
40
50
V G =4.0V
20
0
0
0
1
2
3
4
5
0
6
1
2
3
4
5
6
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
23
1.80
I D =10A
I D =10A
T c =25 ℃
21
1.60
V G =10V
19
Normalized R DS(ON)
RDSON (mΩ )
17
15
13
11
1.40
1.20
1.00
9
0.80
7
0.60
5
2
3
4
5
6
7
8
9
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
V GS (V)
Fig 3. On-Resistance v.s. Gate Voltage
Rev.2.01 6/26/2003
11
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
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80
80
70
70
60
60
50
50
PD (W)
ID , Drain Current (A)
SSM70L02H,J
40
40
30
30
20
20
10
10
0
0
25
50
75
100
125
150
0
50
100
150
T c ,Case Temperature ( o C)
o
T c , Case Temperature ( C)
Fig 5. Maximum Drain Current v.s.
Fig 6. Typical Power Dissipation
Case Temperature
1000
1
100
Normalized Thermal Response (R thjc)
DUTY=0.5
ID (A)
10us
100us
1ms
10
10ms
T c =25 o C
Single Pulse
100ms
0.2
0.1
0.1
0.05
0.02
PDM
0.01
t
SINGLE PULSE
T
Duty factor = t/T
Peak Tj = P DM x Rthjc + TC
0.01
1
1
10
100
0.00001
0.0001
V DS (V)
Fig 7. Maximum Safe Operating Area
Rev.2.01 6/26/2003
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 8. Effective Transient Thermal Impedance
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SSM70L02H,J
f=1.0MHz
16
10000
I D =33A
14
10
C (pF)
VGS , Gate to Source Voltage (V)
V DS =20V
12
8
1000
Ciss
6
Coss
4
Crss
2
0
100
0
5
10
15
20
25
30
35
40
45
50
1
6
11
16
21
V DS (V)
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
100
3
10
2
VGS(th) (V)
T j =150 o C
IS(A)
T j =25 o C
1
1
0
0.1
0.1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
-50
100
150
T j , Junction Temperature( C)
Fig 11. Forward Characteristic of
Rev.2.01 6/26/2003
50
o
V SD (V)
Reverse Diode
0
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
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SSM70L02H,J
VDS
90%
RD
VDS
D
RG
TO THE
OSCILLOSCOPE
0.5x RATED VDS
G
+
10%
VGS
S
10 V
VGS
-
td(on)
Fig 13. Switching Time Circuit
tr
td(off) tf
Fig 14. Switching Time Waveform
VG
VDS
D
5V
0.8 x RATED VDS
G
S
QG
TO THE
OSCILLOSCOPE
QGS
QGD
VGS
+
1~ 3 mA
IG
ID
Charge
Fig 15. Gate Charge Circuit
Q
Fig 16. Gate Charge Waveform
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
guarantee or warranty, express or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
Rev.2.01 6/26/2003
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