1 Megabit (128K x8) Page-Mode EEPROM SST29EE010A / SST29LE010A / SST29VE010A Data Sheet FEATURES: • Single Voltage Read and Write Operations – 5.0V-only for the SST29EE010A – 3.0-3.6V for the SST29LE010A – 2.7-3.6V for the SST29VE010A • Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention • Low Power Consumption – Active Current: 20 mA (typical) for 5V and 10 mA (typical) for 3.0/2.7V – Standby Current: 10 µA (typical) • Fast Page-Write Operation – 128 Bytes per Page, 1024 Pages – Page-Write Cycle: 5 ms (typical) – Complete Memory Rewrite: 5 sec (typical) – Effective Byte-Write Cycle Time: 39 µs (typical) PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x8 CMOS Page-Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST29EE010A/29LE010A/29VE010A write with a single power supply. Internal Erase/Program is transparent to the user. The SST29EE010A/29LE010A/ 29VE010A conform to JEDEC standard pinouts for bytewide memories. Featuring high performance Page-Write, the SST29EE010A/29LE010A/29VE010A provide a typical Byte-Write time of 39 µsec. The entire memory, i.e., 128 KBytes, can be written page-by-page in as little as 5 seconds, when using interface features such as Toggle Bit or Data# Polling to indicate the completion of a Write cycle. To protect against inadvertent write, the SST29EE010A/29LE010A/29VE010A have on-chip hardware and Software Data Protection schemes. Designed, manufactured, and tested for a wide spectrum of applications, the SST29EE010A/29LE010A/29VE010A are offered with a guaranteed Page-Write endurance of 104 cycles. Data retention is rated at greater than 100 years. The SST29EE010A/29LE010A/29VE010A are suited for applications that require convenient and economical • Fast Read Access Time – 5.0V-only operation: 90 and 120 ns – 3.0-3.6V operation: 150 and 200 ns – 2.7-3.6V operation: 200 and 250 ns • Latched Address and Data • Automatic Write Timing – Internal VPP Generation • End-of-Write Detection – Toggle Bit – Data# Polling • Hardware and Software Data Protection 1 2 3 4 • TTL I/O Compatibility • JEDEC Standard – Flash EEPROM Pinouts and command sets • Packages Available – 32 Pin PDIP – 32-Pin PLCC – 32-Pin TSOP (8mm x 14mm & 8mm x 20mm) updating of program, configuration, or data memory. For all system applications, the SST29EE010A/29LE010A/ 29VE010A significantly improve performance and reliability, while lowering power consumption. The SST29EE010A/29LE010A/29VE010A improve flexibility while lowering the cost for program, data, and configuration storage applications. To meet high density, surface mount requirements, the SST29EE010A/29LE010A/29VE010A are offered in 32pin TSOP and 32-lead PLCC packages. A 600-mil, 32pin PDIP package is also available. See Figures 1 and 2 for pinouts. Device Operation The SST Page-Mode EEPROM offers in-circuit electrical write capability. The SST29EE010A/29LE010A/ 29VE010A does not require separate Erase and Program operations. The internally timed write cycle executes both erase and program transparently to the user. The SST29EE010A/29LE010A/29VE010A have industry standard Software Data Protection. The SST29EE010A/29LE010A/29VE010A are compatible with industry standard EEPROM pinouts and functionality. Read The Read operations of the SST29EE010A/29LE010A/ 29VE010A are controlled by CE# and OE#, both have to be low for the system to obtain data from the outputs. © 2000 Silicon Storage Technology, Inc. The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. SSF is a trademark of Silicon Storage Technology, Inc. 303-02 2/00 These specifications are subject to change without notice. 1 Powered by ICminer.com Electronic-Library Service CopyRight 2003 5 6 7 8 9 10 11 12 13 14 15 16 1 Megabit Page-Mode EEPROM SST29EE010A / SST29LE010A / SST29VE010A Data Sheet array. Hence, the Page-Write feature of SST29EE010A/ 29LE010A/29VE010A allow the entire memory to be written in as little as 5 seconds. During the internal write cycle, the host is free to perform additional tasks, such as to fetch data from other locations in the system to set up the write to the next page. In each Page-Write operation, all the bytes that are loaded into the page buffer must have the same page address, i.e. A7 through A16. Any byte not loaded with user data will be written to FF. CE# is used for device selection. When CE# is high, the chip is deselected and only standby power is consumed. OE# is the output control and is used to gate data from the output pins. The data bus is in high impedance state when either CE# or OE# is high. Refer to the read cycle timing diagram for further details (Figure 3). Write The Page-Write to the SST29EE010A/29LE010A/ 29VE010A uses the JEDEC Standard Software Data Protection (SDP) three-byte command sequence. See Figures 4 and 5 for the Page-Write cycle timing diagrams. If after the completion of the three-byte SDP load sequence the host loads a byte into the page buffer within a byte-load cycle time (TBLC) of 100 µs, the SST29EE010A/29LE010A/29VE010A will stay in the page load cycle. Additional bytes are then loaded consecutively. The page load cycle will be terminated if no additional byte is loaded into the page buffer within 200 µs (TBLCO) from the last byte-load cycle, i.e., no subsequent WE# or CE# high-to-low transition after the last rising edge of WE# or CE#. Data in the page buffer can be changed by a subsequent byte-load cycle. The page load period can continue indefinitely, as long as the host continues to load the device within the byte-load cycle time of 100 µs. The page to be loaded is determined by the page address of the last byte loaded. The Write operation consists of three steps. Step 1 is the three-byte load sequence for Software Data Protection. Step 2 is the byte-load cycle to a page buffer of the SST29EE010A/29LE010A/29VE010A. Steps 1 and 2 use the same timing for both operations. Step 3 is an internally controlled write cycle for writing the data loaded in the page buffer into the memory array for nonvolatile storage. During both the SDP three-byte load sequence and the byte-load cycle, the addresses are latched by the falling edge of either CE# or WE#, whichever occurs last. The data is latched by the rising edge of either CE# or WE#, whichever occurs first. The internal write cycle is initiated by the TBLCO timer after the rising edge of WE# or CE#, whichever occurs first. The Write cycle, once initiated, will continue to completion, typically within 5 ms. See Figures 4 and 5 for WE# and CE# controlled PageWrite cycle timing diagrams and Figures 13 and 15 for flowcharts. Software Chip-Erase The SST29EE010A/29LE010A/29VE010A provide a Chip-Erase operation, which allows the user to simultaneously clear the entire memory array to the “1” state. This is useful when the entire device must be quickly erased. The Write operation has three functional cycles: the Software Data Protection load sequence, the page load cycle, and the internal write cycle. The Software Data Protection consists of a specific three-byte load sequence that allows writing to the selected page and will leave the SST29EE010A/29LE010A/29VE010A protected at the end of the Page-Write. The page load cycle consists of loading 1 to 128 Bytes of data into the page buffer. The internal write cycle consists of the TBLCO time-out and the write timer operation. During the Write operation, the only valid reads are Data# Polling and Toggle Bit. The Software Chip-Erase operation is initiated by using a specific six-byte load sequence. After the load sequence, the device enters into an internally timed cycle similar to the Write cycle. During the Erase operation, the only valid read is Toggle Bit. See Table 4 for the load sequence, Figure 8 for timing diagram, and Figure 17 for the flowchart. The Page-Write operation allows the loading of up to 128 Bytes of data into the page buffer of the SST29EE010A/ 29LE010A/29VE010A before the initiation of the internal write cycle. During the internal write cycle, all the data in the page buffer is written simultaneously into the memory © 2000 Silicon Storage Technology, Inc. Powered by ICminer.com Electronic-Library Service CopyRight 2003 2 303-02 2/00 1 Megabit Page-Mode EEPROM SST29EE010A / SST29LE010A / SST29VE010A Data Sheet Write Operation Status Detection The SST29EE010A/29LE010A/29VE010A provide two software means to detect the completion of a Write cycle, in order to optimize the system write cycle time. The software detection includes two status bits: Data# Polling (DQ7) and Toggle Bit (DQ6). The End-of-Write detection mode is enabled after the rising WE# or CE# whichever occurs first, which initiates the internal write cycle. Data Protection The SST29EE010A/29LE010A/29VE010A provide both hardware and software features to protect nonvolatile data from inadvertent writes. Hardware Data Protection Noise/Glitch Protection: A WE# or CE# pulse of less than 5 ns will not initiate a Write cycle. 2 The actual completion of the nonvolatile write is asynchronous with the system; therefore, either a Data# Polling or Toggle Bit read may be simultaneous with the completion of the Write cycle. If this occurs, the system may possibly get an erroneous result, i.e., valid data may appear to conflict with either DQ7 or DQ6. In order to prevent spurious rejection, if an erroneous result occurs, the software routine should include a loop to read the accessed location an additional two (2) times. If both reads are valid, then the device has completed the Write cycle, otherwise the rejection is valid. VCC Power Up/Down Detection: The Write operation is inhibited when VCC is less than 2.5V. 3 Write Inhibit Mode: Forcing OE# low, CE# high, or WE# high will inhibit the Write operation. This prevents inadvertent writes during power-up or power-down. 4 Software Data Protection (SDP) The SST29EE010A/29LE010A/29VE010A provide the JEDEC approved Software Data Protection scheme for all data alteration operations, i.e., Write and Chip-Erase. With this scheme, any Write operation requires the inclusion of a series of three byte-load operations to precede the data loading operation. The three byte-load sequence is used to initiate the Write cycle, providing optimal protection from inadvertent write operations, e.g., during the system power-up or power-down. Data# Polling (DQ7) When the SST29EE010A/29LE010A/29VE010A are in the internal write cycle, any attempt to read DQ7 of the last byte loaded during the byte-load cycle will receive the complement of the true data. Once the Write cycle is completed, DQ7 will show true data. The device is then ready for the next operation. See Figure 6 for Data# Polling timing diagram and Figure 14 for a flowchart. 1 5 6 7 8 9 Toggle Bit (DQ6) During the internal write cycle, any consecutive attempts to read DQ6 will produce alternating 0’s and 1’s, i.e. toggling between 0 and 1. When the Write cycle is completed, the toggling will stop. The device is then ready for the next operation. See Figure 7 for Toggle Bit timing diagram and Figure 14 for a flowchart. The initial read of the Toggle Bit will typically be a “1”. 10 11 12 13 14 15 16 © 2000 Silicon Storage Technology, Inc. Powered by ICminer.com Electronic-Library Service CopyRight 2003 3 303-02 2/00 1 Megabit Page-Mode EEPROM SST29EE010A / SST29LE010A / SST29VE010A Data Sheet Product Identification Mode Exit In order to return to the standard read mode, the Software Product Identification mode must be exited. Exiting is accomplished by issuing the Software ID Exit (reset) operation, which returns the device to the Read operation. The Reset operation may also be used to reset the device to the read mode after an inadvertent transient condition that apparently causes the device to behave abnormally, e.g. not read correctly. See Table 4 for software command codes, Figure 10 for timing waveform and Figure 16 for a flowchart. Product Identification The product identification mode identifies the device as the SST29EE010A/29LE010A/29VE010A and manufacturer as SST. This mode may be accessed by hardware or software operations. The hardware operation is typically used by a programmer to identify the correct algorithm for the SST29EE010A/29LE010A/29VE010A. Users may wish to use the software product identification operation to identify the part (i.e. using the device code) when using multiple manufacturers in the same socket. For details, see Table 3 for hardware operation or Table 4 for software operation, Figure 9 for the software ID entry and read timing diagram and Figure 16 for the ID entry command sequence flowchart. The manufacturer and device codes are the same for both operations. TABLE 1: PRODUCT IDENTIFICATION TABLE Byte Manufacturer’s Code 0000 H SST29EE010A Device Code 0001 H SST29LE010A Device Code 0001 H SST29VE010A Device Code 0001 H Data BF H 22 H 23 H 23 H 303 PGM T1.1 FUNCTIONAL BLOCK DIAGRAM OF SST 29EE010A/29LE010A/29VE010A X-Decoder A16 - A0 1,048,576 Bit EEPROM Cell Array Address Buffer & Latches Y-Decoder and Page Latches CE# OE# WE# Control Logic I/O Buffers and Data Latches DQ7 - DQ0 303 ILL B1.0 © 2000 Silicon Storage Technology, Inc. Powered by ICminer.com Electronic-Library Service CopyRight 2003 4 303-02 2/00 1 Megabit Page-Mode EEPROM SST29EE010A / SST29LE010A / SST29VE010A Data Sheet A11 A9 A8 A13 A14 NC WE# VCC NC A16 A15 A12 A7 A6 A5 A4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 OE# A10 CE# DQ7 DQ6 DQ5 DQ4 DQ3 VSS DQ2 DQ1 DQ0 A0 A1 A2 A3 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 Standard Pinout Top View Die Up 1 2 3 4 303 ILL F01.1 FIGURE 1: PIN ASSIGNMENTS FOR 32-PIN TSOP PACKAGES WE# 4 3 2 1 32 31 30 29 NC VCC A6 NC 5 A16 A7 A15 6 28 A13 A5 7 27 A8 A4 8 26 A9 A3 9 25 A11 A2 10 24 OE# A1 11 23 A10 A0 12 22 CE# DQ0 13 21 14 15 16 17 18 19 20 DQ7 DQ5 DQ4 DQ3 32-Lead PLCC Top View DQ6 A14 6 VSS VCC WE# NC A14 A13 A8 A9 A11 OE# A10 CE# DQ7 DQ6 DQ5 DQ4 DQ3 DQ2 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 A12 1 2 3 4 5 32-Pin 6 PDIP 7 8 Top View 9 10 11 12 13 14 15 16 DQ1 NC A16 A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 VSS 5 7 8 9 10 303 ILL F02.0 FIGURE 2: PIN ASSIGNMENTS FOR 32-PIN PLASTIC DIPS AND 32-LEAD PLCCS TABLE 2: PIN DESCRIPTION Symbol Pin Name A16-A7 Row Address Inputs A6-A0 DQ7-DQ0 Column Address Inputs Data Input/output CE# OE# WE# Vcc Chip Enable Output Enable Write Enable Power Supply Vss NC Ground No Connection 11 Functions To provide memory addresses. Row addresses define a page for a Write cycle. Column Addresses are toggled to load page data. To output data during Read cycles and receive input data during Write cycles. Data is internally latched during a Write cycle. The outputs are in tri-state when OE# or CE# is high. To activate the device when CE# is low. To gate the data output buffers. To control the Write operations To provide 5-volt supply (± 10%) for the SST29EE010A, 3-volt supply (3.0-3.6V) for the SST29LE010A and 2.7-volt supply (2.7-3.6V) for the SST29VE010A Unconnected pins. 303 PGM T2.0 © 2000 Silicon Storage Technology, Inc. Powered by ICminer.com Electronic-Library Service CopyRight 2003 5 303-02 2/00 12 13 14 15 16 1 Megabit Page-Mode EEPROM SST29EE010A / SST29LE010A / SST29VE010A Data Sheet TABLE 3: OPERATION MODES SELECTION Mode CE# OE# Read VIL VIL Page-Write VIL VIH Standby VIH X Write Inhibit X VIL Write Inhibit X X Software Chip-Erase VIL VIH Product Identification Hardware Mode VIL VIL Software Mode SDP Enable Mode VIL VIL VIH VIH WE# VIH VIL X X VIH VIL DQ DOUT DIN High Z High Z/ DOUT High Z/ DOUT DIN Address AIN AIN, See Table 4 X X X AIN, See Table 4 VIH Manufacturer Code (BF) Device Code (see notes) A16 - A1 = VIL, A9 = VH, A0 = VIL A16 - A1 = VIL, A9 = VH, A0= VIH See Table 4 See Table 4 VIL VIL 303 PGM T3.0 TABLE 4: SOFTWARE COMMAND CODES Command Sequence 1st Bus Write Cycle Addr(1) Data 5555H AAH 5555H AAH 2nd Bus Write Cycle Addr(1) Data 2AAAH 55H 2AAAH 55H 3rd Bus Write Cycle Addr(1) Data 5555H A0H 5555H 80H 5555H AAH 2AAAH 55H 5555H 90H 5555H AAH 2AAAH 55H 5555H F0H Alternate Software 5555H ID Entry(3) AAH 2AAAH 55H 5555H 80H Page-Write Software ChipErase Software ID Entry Software ID Exit 4th Bus Write Cycle Addr(1) Data Addr(2) Data 5555H AAH 5th Bus Write Cycle Addr(1) Data 6th Bus Write Cycle Addr(1) Data 2AAAH 55H 5555H 10H 5555H 2AAAH 55H 5555H 60H AAH 303 PGM T4.0 Notes: (1) Address format A14-A0 (Hex), Addresses A15 and A16 are a “Don’t Care”. Page-Write consists of loading up to 128 Bytes (A 6 - A0). (3) Alternate six-byte software Product-ID Command Code (4) The software Chip-Erase function is not supported by the industrial temperature part. Please contact SST, if you require this function for an industrial temperature part. Notes for Software Product ID Command Code: 1. With A14 -A1 =0; SST Manufacturer Code = BFH, is read with A0 = 0, SST29EE010A Device Code = 22H, is read with A0 = 1. SST29LE010A/29VE010A Device Code = 23H, is read with A0 = 1. 2. The device does not remain in Software Product ID Mode if powered down. 3. This device supports both the JEDEC standard three-byte command code sequence and SST’s original six-byte command code sequence. For new designs, SST recommends the three-byte command code sequence be used. (2) © 2000 Silicon Storage Technology, Inc. Powered by ICminer.com Electronic-Library Service CopyRight 2003 6 303-02 2/00 1 Megabit Page-Mode EEPROM SST29EE010A / SST29LE010A / SST29VE010A Data Sheet Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute Maximum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in the operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.) Temperature Under Bias ................................................................................................................. -55°C to +125°C Storage Temperature ...................................................................................................................... -65°C to +150°C D. C. Voltage on Any Pin to Ground Potential ............................................................................. -0.5V to VCC+ 0.5V Transient Voltage (<20 ns) on Any Pin to Ground Potential ......................................................... -1.0V to VCC+ 1.0V Voltage on A9 Pin to Ground Potential ................................................................................................ -0.5V to 14.0V Package Power Dissipation Capability (Ta = 25°C) ........................................................................................... 1.0W Through Hole Lead Soldering Temperature (10 Seconds) .............................................................................. 300°C Surface Mount Lead Soldering Temperature (3 Seconds) ............................................................................... 240°C Output Short Circuit Current(1) ....................................................................................................................... 100 mA Note: (1) Outputs shorted for no more than one second. No more than one output shorted at a time. SST29EE010A OPERATING RANGE Range Ambient Temp Commercial 0°C to +70°C Industrial -40°C to +85°C VCC 5V±10% 5V±10% SST29LE010A OPERATING RANGE Range Ambient Temp Commercial 0°C to +70°C Industrial -40°C to +85°C VCC 3.0V to 3.6V 3.0V to 3.6V SST29VE010A OPERATING RANGE Range Ambient Temp Commercial 0°C to +70°C Industrial -40°C to +85°C VCC 2.7V to 3.6V 2.7V to 3.6V 1 2 3 4 5 6 AC CONDITIONS OF TEST Input Rise/Fall Time ......... 10 ns Output Load ..................... 1 TTL Gate and CL = 100 pF 7 See Figures 12 and 13 8 9 10 11 12 13 14 15 16 © 2000 Silicon Storage Technology, Inc. Powered by ICminer.com Electronic-Library Service CopyRight 2003 7 303-02 2/00 1 Megabit Page-Mode EEPROM SST29EE010A / SST29LE010A / SST29VE010A Data Sheet TABLE 5: SST29EE010A DC OPERATING CHARACTERISTICS VCC = 5V±10% Limits Symbol Parameter Min Max Units Test Conditions ICC Power Supply Current CE#=OE#=VIL,WE#=VIH , all I/Os open, Read 30 mA Address input = VIL/VIH, at f=1/TRC Min., VCC=VCC Max Write 50 mA CE#=WE#=VIL, OE#=VIH, VCC =VCC Max. ISB1 Standby VCC Current 3 mA CE#=OE#=WE#=VIH, VCC =VCC Max. (TTL input) ISB2 Standby VCC Current 50 µA CE#=OE#=WE#=VCC -0.3V. (CMOS input) VCC = VCC Max. ILI Input Leakage Current 1 µA VIN =GND to VCC, VCC = VCC Max. ILO Output Leakage Current 10 µA VOUT =GND to VCC, VCC = VCC Max. VIL Input Low Voltage 0.8 V VCC = VCC Min. VIH Input High Voltage 2.0 V VCC = VCC Max. VOL Output Low Voltage 0.4 V IOL = 2.1 mA, VCC = VCC Min. VOH Output High Voltage 2.4 V IOH = -400µA, VCC = VCC Min. VH Supervoltage for A9 11.6 12.4 V CE# = OE# =VIL, WE# = VIH IH Supervoltage Current 100 µA CE# = OE# = VIL, WE# = VIH, A9 = VH Max. for A9 303 PGM T5.1 TABLE 6: SST29LE010A/29VE010A DC OPERATING CHARACTERISTICS VCC = 3.0-3.6 FOR SST29LE010A, VCC = 2.7-3.6 FOR SST29VE010A Limits Symbol Parameter Min Max Units Test Conditions Power Supply Current CE#=OE#=VIL,WE#=VIH , all I/Os open, ICC Read 12 mA Address input = VIL/VIH, at f=1/TRC Min., VCC=VCC Max Write 15 mA CE#=WE#=VIL, OE#=VIH, VCC =VCC Max. ISB1 Standby VCC Current 1 mA CE#=OE#=WE#=VIH, VCC =VCC Max. (TTL input) ISB2 Standby VCC Current 15 µA CE#=OE#=WE#=VCC -0.3V. (CMOS input) VCC = VCC Max. ILI Input Leakage Current 1 µA VIN =GND to VCC, VCC = VCC Max. ILO Output Leakage Current 10 µA VOUT =GND to VCC, VCC = VCC Max. VIL Input Low Voltage 0.8 V VCC = VCC Min. Input High Voltage 2.0 V VCC = VCC Max. VIH VOL Output Low Voltage 0.4 V IOL = 100 µA, VCC = VCC Min. VOH Output High Voltage 2.4 V IOH = -100 µA, VCC = VCC Min. VH Supervoltage for A9 11.6 12.4 V CE# = OE# =VIL, WE# = VIH IH Supervoltage Current 100 µA CE# = OE# = VIL, WE# = VIH, for A9 A9 = VH Max. 303 PGM T6.1 © 2000 Silicon Storage Technology, Inc. Powered by ICminer.com Electronic-Library Service CopyRight 2003 8 303-02 2/00 1 Megabit Page-Mode EEPROM SST29EE010A / SST29LE010A / SST29VE010A Data Sheet TABLE 7: POWER-UP TIMINGS Symbol Parameter TPU-READ(1) Power-up to Read Operation (1) TPU-WRITE Power-up to Write Operation Maximum 100 5 Units µs ms 1 303 PGM T7.0 TABLE 8: CAPACITANCE (Ta = 25 °C, f=1 MHz, other pins open) Parameter Description Test Condition CI/O(1) I/O Pin Capacitance VI/O = 0V CIN(1) Input Capacitance VIN = 0V Maximum 12 pF 6 pF 2 3 303 PGM T8.0 Note: (1)This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. 4 5 TABLE 9: RELIABILITY CHARACTERISTICS Symbol Parameter NEND TDR(1) VZAP_HBM(1) VZAP_MM(1) ILTH(1) Endurance Data Retention ESD Susceptibility Human Body Model ESD Susceptibility Machine Model Latch Up 6 Minimum Specification Units Test Method 10,000 100 2000 Cycles Years Volts JEDEC Standard A117 JEDEC Standard A103 JEDEC Standard A114 200 Volts JEDEC Standard A115 100 mA (1)This 8 JEDEC Standard 78 303 PGM T9.2 Note: 7 9 parameter is measured only for initial qualification and after a design or process change that could affect this parameter. 10 11 12 13 14 15 16 © 2000 Silicon Storage Technology, Inc. Powered by ICminer.com Electronic-Library Service CopyRight 2003 9 303-02 2/00 1 Megabit Page-Mode EEPROM SST29EE010A / SST29LE010A / SST29VE010A Data Sheet AC CHARACTERISTICS TABLE 10: SST29EE010A READ CYCLE TIMING PARAMETERS SST29EE010A-90 Symbol Parameter Min Max 90 SST29EE010A-120 Min Max 120 Units TRC Read Cycle Time TCE Chip Enable Access Time 90 120 ns TAA Address Access Time 90 120 ns TOE Output Enable Access Time TCLZ(1) CE# Low to Active Output 0 0 ns TOLZ(1) OE# Low to Active Output 0 0 ns 40 ns 50 ns (1) CE# High to High-Z Output 30 30 ns TOHZ(1) TOH(1) OE# High to High-Z Output 30 30 ns TCHZ Output Hold from Address Change 0 0 ns 303 PGM T10.0 TABLE 11: SST29LE010A READ CYCLE TIMING PARAMETERS SST29LE010A-150 Symbol TRC TCE TAA TOE TCLZ(1) TOLZ(1) TCHZ(1) TOHZ(1) TOH(1) Parameter Read Cycle Time Chip Enable Access Time Address Access Time Output Enable Access Time CE# Low to Active Output OE# Low to Active Output CE# High to High-Z Output OE# High to High-Z Output Output Hold from Address Change Min 150 Max SST29LE010A-200 Min 200 150 150 60 0 0 Max 200 200 100 0 0 30 30 0 50 50 0 Units ns ns ns ns ns ns ns ns ns 303 PGM T11.0 TABLE 12: SST29VE010A READ CYCLE TIMING PARAMETERS SST29VE010A-200 Symbol TRC TCE TAA TOE TCLZ(1) TOLZ(1) TCHZ(1) TOHZ(1) TOH(1) Parameter Read Cycle Time Chip Enable Access Time Address Access Time Output Enable Access Time CE# Low to Active Output OE# Low to Active Output CE# High to High-Z Output OE# High to High-Z Output Output Hold from Address Change Min 200 Max SST29VE010A-250 Min 250 200 200 100 0 0 250 250 120 0 0 50 50 0 Max 50 50 0 Units ns ns ns ns ns ns ns ns ns 303 PGM T12.0 © 2000 Silicon Storage Technology, Inc. Powered by ICminer.com Electronic-Library Service CopyRight 2003 10 303-02 2/00 1 Megabit Page-Mode EEPROM SST29EE010A / SST29LE010A / SST29VE010A Data Sheet TABLE 13: PAGE-WRITE CYCLE TIMING PARAMETERS Symbol TWC TAS TAH TCS TCH TOES TOEH TCP TWP TDS TDH TBLC(1) TBLCO(1) TIDA TSCE Parameter Write Cycle (Erase and Program) Address Setup Time Address Hold Time WE# and CE# Setup Time WE# and CE# Hold Time OE# High Setup Time OE# High Hold Time CE# Pulse Width WE# Pulse Width Data Setup Time Data Hold Time Byte Load Cycle Time Byte Load Cycle Time Software ID Access and Exit Time Software Chip-Erase SST29EE010A Min Max 10 0 50 0 0 0 0 70 70 35 0 0.05 100 200 10 20 SST29LE/VE010A Min Max 10 0 70 0 0 0 0 120 120 50 0 0.05 100 200 10 20 Units ms ns ns ns ns ns ns ns ns ns ns µs µs µs ms 1 2 3 4 5 6 7 303 PGM T13.1 Note: (1)This parameter is measured only for initial qualification and after the design or process change that could affect this parameter. 8 9 10 11 12 13 14 15 16 © 2000 Silicon Storage Technology, Inc. Powered by ICminer.com Electronic-Library Service CopyRight 2003 11 303-02 2/00 1 Megabit Page-Mode EEPROM SST29EE010A / SST29LE010A / SST29VE010A Data Sheet TRC TAA ADDRESS A16-0 TCE CE# TOE OE# TOHZ TOLZ VIH WE# HIGH-Z TCHZ TOH TCLZ HIGH-Z DATA VALID DQ 7-0 DATA VALID 303 ILL F03.0 FIGURE 3: READ CYCLE TIMING DIAGRAM TAH Page-Write TAS ADDRESS A16-0 5555 2AAA 5555 TCS TCH CE# TOES TOEH OE# TWP TBLCO TBLC WE# TDH DQ 7-0 AA 55 SW0 SW1 A0 DATA VALID TWC TDS SW2 BYTE 0 BYTE 1 BYTE 127 303 ILL F04.1 FIGURE 4: WE# CONTROLLED PAGE-WRITE CYCLE TIMING DIAGRAM © 2000 Silicon Storage Technology, Inc. Powered by ICminer.com Electronic-Library Service CopyRight 2003 12 303-02 2/00 1 Megabit Page-Mode EEPROM SST29EE010A / SST29LE010A / SST29VE010A Data Sheet TAH Page-Write 1 TAS ADDRESS A16-0 5555 2AAA 5555 TCP 2 TBLCO TBLC CE# TOES 3 TOEH OE# 4 TCS TCH WE# 5 TDH DQ 7-0 AA 55 SW0 SW1 A0 DATA VALID BYTE 0 6 TWC TDS SW2 BYTE 1 BYTE 127 303 ILL F05.1 FIGURE 5: CE# CONTROLLED PAGE-WRITE CYCLE TIMING DIAGRAM 7 8 9 10 ADDRESS A16-0 TCE 11 CE# TOES TOEH 12 OE# TOE 13 WE# DQ 7 D D# D# 14 D TWC + TBLCO 303 ILL F06.0 15 16 FIGURE 6: DATA# POLLING TIMING DIAGRAM © 2000 Silicon Storage Technology, Inc. Powered by ICminer.com Electronic-Library Service CopyRight 2003 13 303-02 2/00 1 Megabit Page-Mode EEPROM SST29EE010A / SST29LE010A / SST29VE010A Data Sheet ADDRESS A16-0 TCE CE# TOEH TOES TOE OE# WE# DQ6 TWC + TBLCO TWO READ CYCLES WITH SAME OUTPUTS 303 ILL F07.0 FIGURE 7: TOGGLE BIT TIMING DIAGRAM Six-Byte Code for Software Chip-Erase ADDRESS A14-0 DQ 7-0 5555 AA 2AAA 5555 55 5555 80 2AAA AA TSCE 5555 55 10 CE# OE# TBLCO TWP WE# TBLC SW0 SW1 SW2 SW3 SW4 SW5 303 ILL F09.1 FIGURE 8: SOFTWARE CHIP-ERASE TIMING DIAGRAM © 2000 Silicon Storage Technology, Inc. Powered by ICminer.com Electronic-Library Service CopyRight 2003 14 303-02 2/00 1 Megabit Page-Mode EEPROM SST29EE010A / SST29LE010A / SST29VE010A Data Sheet Three-Byte Sequence for Software ID Entry ADDRESS A14-0 5555 1 5555 2AAA 0000 0001 2 TAA DQ 7-0 AA 90 55 BF DEVICE CODE 3 TIDA CE# 4 OE# 5 TWP WE# 6 TBLC SW0 SW1 DEVICE ID SW2 = 22 for SST29EE010A = 23 for SST29LE010A/29VE010A 303 ILL F10.2 7 FIGURE 9: SOFTWARE ID ENTRY AND READ 8 9 Three-Byte Sequence for Software ID Exit and Reset ADDRESS A14-0 DQ 7-0 5555 AA 10 5555 2AAA 55 11 F0 TIDA 12 CE# 13 OE# 14 TWP WE# TBLC SW0 SW1 15 SW2 303 ILL F11.0 16 FIGURE 10: SOFTWARE ID EXIT AND RESET © 2000 Silicon Storage Technology, Inc. Powered by ICminer.com Electronic-Library Service CopyRight 2003 15 303-02 2/00 1 Megabit Page-Mode EEPROM SST29EE010A / SST29LE010A / SST29VE010A Data Sheet VIHT VHT INPUT VHT REFERENCE POINTS OUTPUT VLT VLT VILT 303 ILL F12.1 « AC test inputs are driven at VIHT (2.4 V) for a logic “1” and VILT (0.4 V) for a logic “0”. Measurement reference points for inputs and outputs are VHT (2.0 V) and VLT (0.8 V). Inputs rise and fall times (10% 90%) are <10 ns. Note: VHT–VHIGH Test VLT–VLOW Test VIHT–VINPUT HIGH Test VILT–VINPUT LOW Test FIGURE 11: AC INPUT/OUTPUT REFERENCE WAVEFORMS TEST LOAD EXAMPLE VCC TO TESTER RL HIGH TO DUT CL RL LOW 303 ILL F13.0 FIGURE 12: A TEST LOAD EXAMPLE © 2000 Silicon Storage Technology, Inc. Powered by ICminer.com Electronic-Library Service CopyRight 2003 16 303-02 2/00 1 Megabit Page-Mode EEPROM SST29EE010A / SST29LE010A / SST29VE010A Data Sheet See Figure 15 Start 1 Page-Write Command 2 3 Set Page Address 4 5 Set Byte Address = 0 6 Load Byte Data 7 8 Increment Byte Address By 1 No 9 Byte Address = 128? 10 Yes 11 12 Wait TBLCO 13 Wait for End-ofWrite (TWC, Data# Polling bit or Toggle bit operation) Write Completed 14 15 303 ILL F14.2 16 FIGURE 13: WRITE ALGORITHM © 2000 Silicon Storage Technology, Inc. Powered by ICminer.com Electronic-Library Service CopyRight 2003 17 303-02 2/00 1 Megabit Page-Mode EEPROM SST29EE010A / SST29LE010A / SST29VE010A Data Sheet Internal Timer Toggle Bit Data# Polling Page-Write Initiated Page-Write Initiated Page-Write Initiated Wait TWC Read a byte from page Read DQ7 (Data for last byte loaded) Write Completed Read same byte No Is DQ7 = true data? Yes No Does DQ6 match? Write Completed Yes Write Completed 303 ILL F15.1 FIGURE 14: WAIT OPTIONS © 2000 Silicon Storage Technology, Inc. Powered by ICminer.com Electronic-Library Service CopyRight 2003 18 303-02 2/00 1 Megabit Page-Mode EEPROM SST29EE010A / SST29LE010A / SST29VE010A Data Sheet Command Sequence 1 Write data: AA Address: 5555 2 3 Write data: 55 Address: 2AAA 4 Write data: A0 Address: 5555 Load 0 to 128 Bytes of page data 5 6 Page Load Operation 7 8 Wait TBLCO 9 Wait TWC 10 11 Device Written 12 303 ILL F16.1 13 FIGURE 15: PAGE-WRITE FLOWCHART 14 15 16 © 2000 Silicon Storage Technology, Inc. Powered by ICminer.com Electronic-Library Service CopyRight 2003 19 303-02 2/00 1 Megabit Page-Mode EEPROM SST29EE010A / SST29LE010A / SST29VE010A Data Sheet Software Product ID Entry Command Sequence Software Product ID Exit & Reset Command Sequence Write data: AA Address: 5555 Write data: AA Address: 5555 Write data: 55 Address: 2AAA Write data: 55 Address: 2AAA Write data: 90 Address: 5555 Write data: F0 Address: 5555 Pause 10 µs Pause 10 µs Read Software ID Return to normal operation 303 ILL F17.0 FIGURE 16: SOFTWARE PRODUCT COMMAND FLOWCHARTS © 2000 Silicon Storage Technology, Inc. Powered by ICminer.com Electronic-Library Service CopyRight 2003 20 303-02 2/00 1 Megabit Page-Mode EEPROM SST29EE010A / SST29LE010A / SST29VE010A Data Sheet Software Chip-Erase Command Sequence 1 Write data: AA Address: 5555 2 3 Write data: 55 Address: 2AAA 4 5 Write data: 80 Address: 5555 6 Write data: AA Address: 5555 7 8 Write data: 55 Address: 2AAA 9 Write data: 10 Address: 5555 10 11 Wait TSCE 12 13 Chip-Erase to FFH 303 ILL F18.1 14 FIGURE 17: SOFTWARE CHIP-ERASE COMMAND CODES 15 16 © 2000 Silicon Storage Technology, Inc. Powered by ICminer.com Electronic-Library Service CopyRight 2003 21 303-02 2/00 1 Megabit Page-Mode EEPROM SST29EE010A / SST29LE010A / SST29VE010A Data Sheet PRODUCT ORDERING INFORMATION Device Speed SST29xE010A - XXX Suffix1 - XX Suffix2 - XX Package Modifier H = 32 leads Numeric = Die modifier Package Type P = PDIP N = PLCC E = TSOP (die up) 8mm x 20mm W = TSOP (die up) 8mm x 14mm U = Unencapsulated die Operating Temperature C = Commercial = 0° to 70°C I = Industrial = -40° to 85°C Minimum Endurance 4 = 10,000 cycles Read Access Speed 250 = 250 ns 200 = 200 ns 150 = 150 ns 120 = 120 ns 90 = 90 ns Version Code Voltage E = 5.0V-only L = 3.0 - 3.6V V = 2.7 - 3.6V © 2000 Silicon Storage Technology, Inc. Powered by ICminer.com Electronic-Library Service CopyRight 2003 22 303-02 2/00 1 Megabit Page-Mode EEPROM SST29EE010A / SST29LE010A / SST29VE010A Data Sheet SST29EE010A Valid combinations SST29EE010A-90-4C-EH SST29EE010A-90-4C-NH SST29EE010A-120-4C-EH SST29EE010A-120-4C-NH SST29EE010A-90-4C-PH SST29EE010A-120-4C-PH 1 SST29EE010A-90-4C-WH SST29EE010A-120-4C-WH SST29EE010A-90-4I-EH SST29EE010A-120-4I-EH 2 SST29EE010A-90-4I-NH SST29EE010A-120-4I-NH 3 SST29EE010A-120-4C-U2 4 SST29LE010A Valid combinations SST29LE010A-150-4C-EH SST29LE010A-150-4C-NH SST29LE010A-200-4C-EH SST29LE010A-200-4C-NH SST29LE010A-150-4C-WH SST29LE010A-200-4C-WH SST29LE010A-150-4I-EH SST29LE010A-150-4I-WH SST29LE010A-150-4I-NH 5 6 SST29LE010A-200-4C-U2 SST29VE010A Valid combinations SST29VE010A-200-4C-EH SST29VE010A-200-4C-NH SST29VE010A-250-4C-EH SST29VE010A-250-4C-NH SST29VE010A-200-4C-WH SST29VE010A-250-4C-WH SST29VE010A-200-4I-EH SST29VE010A-200-4I-WH SST29VE010A-200-4I-NH 7 8 SST29VE010A-250-4C-U2 9 Example:Valid combinations are those products in mass production or will be in mass production. Consult your SST sales representative to confirm availability of valid combinations and to determine availability of new combinations. Note: 10 The software Chip-Erase function is not supported by the industrial temperature part. Please contact SST, if you require this function for an industrial temperature part. 11 12 13 14 15 16 © 2000 Silicon Storage Technology, Inc. Powered by ICminer.com Electronic-Library Service CopyRight 2003 23 303-02 2/00 1 Megabit Page-Mode EEPROM SST29EE010A / SST29LE010A / SST29VE010A Data Sheet PACKAGING DIAGRAMS pin 1 index 1 CL .600 .625 32 .530 .550 1.645 1.655 .065 .075 7˚ 4 PLCS. .170 .200 Base Plane Seating Plane .015 .050 .070 .080 Note: .045 .065 .016 .022 .120 .150 .100 BSC 0˚ 15˚ .008 .012 .600 BSC 1. Complies with JEDEC publication 95 MO-015 AP dimensions, although some dimensions may be more stringent. 2. All linear dimensions are in inches (min/max). 3. Dimensions do not include mold flash. Maximum allowable mold flash is .010 inches. 32.pdipPH-ILL.1 32-LEAD PLASTIC DUAL-IN-LINE PACKAGE (PDIP) SST PACKAGE CODE: PH TOP VIEW Optional Pin #1 Identifier SIDE VIEW .485 .495 .447 .453 .042 .048 2 1 .106 .112 32 .020 R. MAX. .023 x 30˚ .029 .030 R. .040 .042 .048 .585 .595 BOTTOM VIEW .547 .553 .013 .021 .400 BSC .026 .032 .490 .530 .050 BSC. .015 Min. .075 .095 .050 BSC. .125 .140 Note: 1. Complies with JEDEC publication 95 MS-016 AE dimensions, although some dimensions may be more stringent. 2. All linear dimensions are in inches (min/max). 3. Dimensions do not include mold flash. Maximum allowable mold flash is .008 inches. .026 .032 32.PLCC.NH-ILL.1 32-LEAD PLASTIC LEAD CHIP CARRIER (PLCC) SST PACKAGE CODE: NH © 2000 Silicon Storage Technology, Inc. Powered by ICminer.com Electronic-Library Service CopyRight 2003 24 303-02 2/00 1 Megabit Page-Mode EEPROM SST29EE010A / SST29LE010A / SST29VE010A Data Sheet 1.05 0.95 PIN # 1 IDENTIFIER 1 .50 BSC 2 .270 .170 8.10 7.90 3 4 0.15 0.05 12.50 12.30 5 0.70 0.50 Note: 6 14.20 13.80 1. Complies with JEDEC publication 95 MO-142 BA dimensions, although some dimensions may be more stringent. 2. All linear dimensions are in millimeters (min/max). 3. Coplanarity: 0.1 (±.05) mm. 7 32.TSOP-WH-ILL.3 32-LEAD THIN SMALL OUTLINE PACKAGE (TSOP) 8MM X 14MM SST PACKAGE CODE: WH 8 9 1.05 0.95 PIN # 1 IDENTIFIER .50 BSC 8.10 7.90 10 11 .27 .17 12 13 0.15 0.05 18.50 18.30 14 0.70 0.50 Note: 15 20.20 19.80 1. Complies with JEDEC publication 95 MO-142 BD dimensions, although some dimensions may be more stringent. 2. All linear dimensions are in millimeters (min/max). 3. Coplanarity: 0.1 (±.05) mm. 16 32.TSOP-EH-ILL.3 32-LEAD THIN SMALL OUTLINE PACKAGE (TSOP) 8MM X 20MM SST PACKAGE CODE: EH © 2000 Silicon Storage Technology, Inc. Powered by ICminer.com Electronic-Library Service CopyRight 2003 25 303-02 2/00 1 Megabit Page-Mode EEPROM SST29EE010A / SST29LE010A / SST29VE010A Data Sheet Silicon Storage Technology, Inc. • 1171 Sonora Court • Sunnyvale, CA 94086 • Telephone 408-735-9110 • Fax 408-735-9036 www.SuperFlash.com or www.ssti.com • Literature FaxBack 888-221-1178, International 732-544-2873 © 2000 Silicon Storage Technology, Inc. Powered by ICminer.com Electronic-Library Service CopyRight 2003 26 303-02 2/00