N-Channel JFET Monolithic Dual CORPORATION SST404 / SST405 / SST406 FEATURES • Very Low Noise . . . . . . . . . . . . . en < 10 nV/ Hz @ 10Hz Input Bias . . . . . . . . . . . . . . . . . . . . . . . . . . . IG < 2pA • Low • High Breakdown Voltage. . . . . . . . . . . . . . . . . . . BV > 50V APPLICATIONS • Precision Instrumentation Amplifiers • Input • Impedance Converters DESCRIPTION The SST404 Series is a very Low Noise Monolithic N-Channel JFET Pair in a surface mount SO-8 plastic package. Designed utilizing Calogic’s proprietary JFET processing techniques these devices are ideal for front end amplification of low level signals. The low noise, low leakage and good frequency response are excellent features for sensitive medical, instrumentation and infrared designs. ORDERING INFORMATION Part Package SST404-6 Plastic SO-8 Temperature Range -55oC to +125oC NOTE: For Sorted Chips in Carriers, See U401 Series PIN CONFIGURATIONS TOP VIEW SO-8 CJ2 (1) S1 N/C (8) (2) D1 G2 (7) (3) G1 D2 (6) (4) N/C S2 (5) PRODUCT MARKING SST404 R04 SST405 R05 SST406 R06 SST404 / SST405 / SST406 CORPORATION ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise noted) Parameter/Test Condition Gate-Drain Voltage Gate-Source Voltage Forward Gate Current Power Dissipation (per side) (total) Power Derating (per side) (total) Operating Junction Temperature Storage Temperature Lead Temperature (1/16" from case for 10 seconds) Symbol Limit Unit VGD VGS IG PD -50 -50 10 300 500 2.4 4 -55 to 150 -55 to 200 300 V V mA mW mW mW/ oC mW/ oC o C o C o C TJ Tstg TL ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise noted) SYMBOL CHARACTERISTCS TYP1 SST404 SST405 SST406 UNIT TEST CONDITIONS MIN MAX MIN MAX MIN MAX STATIC V(BR)GSS Gate-Source Breakdown Voltage -58 -50 -50 -50 V(BR)G1 - G2 Gate-Gate Breakdown Voltage -58 ±50 ±50 ±50 IG = -1µA, VDS = 0V V VGS(OFF ) Gate-Source Cut off Voltage -1.5 -0.5 -2.5 -0.5 -2.5 -0.5 -2.5 IDSS Saturation Drain Current 2 3.5 0.5 IGSS Gate Reverse Current IG Gate Operating Current -2 10 0.5 -25 10 0.5 -25 10 -25 -1 IG = ±1µA, VDS = 0V, VGS = 0V VDS = 15V, ID = 1nA mA VDS = 15V, VGS = 0V pA VGS = -30V, VDS = 0V nA TA = 125 oC -2 -15 -15 -15 pA VDG = 15V, ID = 200µA -0.8 -10 -10 -10 nA TA = 125 oC Ω VGS = 0V, I D = 0.1mA rDS(ON) Drain-Source On-Resistance 250 VGS Gate-Source Voltage -1 VGS(F) Gate-Source Forward Voltage 0.7 gfs Common-Source Forward Transconductance 1.5 gos Common-Source Output Conductance 1.3 gfs Common-Source Forward Transconductance 1.5 gos Common-Source Output Conductance 10 20 -2.3 -2.3 -2.3 V VDG = 15V, ID = 200µA IG = 1mA, VDS = 0V DYNAMIC 1 2 1 2 2 7 2 1 2 2 7 20 2 2 mS 2 µS 7 VDG = 15V, ID = 200µA f = 1kHz VDS = 10V, VGS = 0V f = 1kHz 20 Ciss Common-Source Input Capacitance 8 8 8 Crss Common-Source Reverse Transfer Capacitance 1.5 3 3 3 en Equivalent Input Noise Voltage 10 20 20 20 nV/ Hz VDG = 15V, I D = 200µA f = 10Hz 15 20 40 VDG = 10V, ID = 200µA 25 40 80 25 40 80 pF VDG = 15V, ID = 200µA f = 1MHz MATCHING | VGS1 - VGS2 | Differential Gate-Source Voltage ∆ | VGS1 - VGS2 | Gate-Source Voltage Differential Change with Temperature ∆T CMRR Common Mode Rejection Ratio 102 NOTES: 1. For design aid only, not subject to production testing. 2. Pulse test; PW = 300µs, duty cycle ≤ 3%. 95 90 mV µV/ oC TA = -55 to 25 oC VDG = 10V, TA = 25 to 125oC ID = 200µA dB VDG = 10 to 20V, ID = 200µA