ST 8550 (2A) PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups C and D according to its DC current gain. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 25 V Emitter Base Voltage -VEBO 6 V Collector Current -IC 2 A Base Current -IB 100 mA Power Dissipation Ptot 1 W Junction Temperature Tj 150 O Storage Temperature Range TS - 55 to + 150 O C C Characteristics at Ta = 25 C O Parameter DC Current Gain at -VCE = 1 V, -IC = 5 mA at -VCE = 1 V, -IC = 100 mA at -VCE = 1 V, -IC = 1.5 A Collector Base Cutoff Current at -VCB = 35 V Emitter Base Cutoff Current at -VEB = 6 V Collector Base Breakdown Voltage at -IC = 100 µA Collector Emitter Breakdown Voltage at -IC = 2 mA Emitter Base Breakdown Voltage at -IE = 100 µA Collector Emitter Saturation Voltage at -IC = 1.5 A, -IB = 100 mA Base Emitter Saturation Voltage at -IC = 1.5 A, -IB = 100 mA Base Emitter On Voltage at -IC = 10 mA, -VCE = 1 V Gain Bandwidth Product at -VCE = 10 V, -IC = 50 mA Collector Base Capacitance at -VCB = 10 V, f = 1 MHz 8550C 8550D Symbol Min. Typ. Max. Unit hFE hFE hFE hFE 45 120 160 40 - 200 300 - - -ICBO - - 100 nA -IEBO - - 100 nA -V(BR)CBO 40 - - V -V(BR)CEO 25 - - V -V(BR)EBO 6 - - V -VCE(sat) - - 0.5 V -VBE(sat) - - 1.2 V -VBE(on) - - 1 V fT 120 - - MHz COB - 15 - pF SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 14/08/2008