SEMTECH_ELEC ST9015

ST 9015
PNP Silicon Epitaxial Planar Transistor
for switching and AF amplifier applications.
The transistor is subdivided into four groups, A, B,
C and D, according to its DC current gain. As
complementary type the NPN transistor ST 9014
is recommended.
1. Emitter 2. Base 3. Collector
TO-92 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Collector Base Voltage
-VCBO
50
V
Collector Emitter Voltage
-VCEO
45
V
Emitter Base Voltage
-VEBO
5
V
Collector Current
-IC
100
mA
Power Dissipation
Ptot
450
mW
Junction Temperature
Tj
150
O
Storage Temperature Range
TS
- 55 to + 150
O
Characteristics at Ta = 25 OC
Parameter
DC Current Gain
at -VCE = 5 V, -IC = 1 mA
Current Gain Group
Collector Base Cutoff Current
at -VCB = 50 V
Emitter Base Cutoff Current
at -VEB = 5 V
Collector Base Breakdown Voltage
at -IC = 100 µA
Collector Emitter Breakdown Voltage
at -IC = 1 mA
Emitter Base Breakdown Voltage
at -IE = 100 µA
Collector Emitter Saturation Voltage
at -IC = 100 mA, -IB = 5 mA
Base Emitter Saturation Voltage
at -IC = 100 mA, -IB = 5 mA
Gain Bandwidth Product
at -VCE = 10 V, -IC = 10 mA
Output Capacitance
at -VCB = 10 V, f = 1 MHz
A
B
C
D
C
C
Symbol
Min.
Max.
Unit
hFE
hFE
hFE
hFE
60
100
200
400
150
300
600
800
-
-ICBO
-
50
nA
-IEBO
-
50
nA
-V(BR)CBO
50
-
V
-V(BR)CEO
45
-
V
-V(BR)EBO
5
-
V
-VCE(sat)
-
0.65
V
-VBE(sat)
-
1
V
fT
100
-
MHz
COB
-
7
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 02/08/2008
ST 9015
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 02/08/2008