ST 2SC1008 NPN Silicon Epitaxial Planar Transistor for medium speed switching and low frequency amplifier applications. The transistor is subdivided into three groups, R, O, Y,and G according to its DC current gain. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage VCBO 80 V Collector Emitter Voltage VCEO 60 V Emitter Base Voltage VEBO 8 V IC 700 mA Ptot 800 mW Tj 150 O Tstg - 55 to + 150 O Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 2 V, IC = 50 mA Current Gain Group R O Y G Collector Base Cutoff Current at VCB = 60 V Emitter Base Cutoff Current at VEB = 5 V Collector Base Breakdown Voltage at IC = 100 µA Collector Emitter Breakdown Voltage at IC = 10 mA Emitter Base Breakdown Voltage at IE = 10 µA Collector Emitter Saturation Voltage at IC = 500 mA, IB = 50 mA Base Emitter Saturation Voltage at IC = 500 mA, IB = 50 mA Gain Bandwidth Product at VCE = 10 V, IC = 50 mA Output Capacitance at VCB = 10 V, IE = 0, f = 1 MHz C C Symbol Min. Typ. Max. Unit hFE hFE hFE hFE 40 70 120 200 - 80 140 240 400 - ICBO - - 0.1 µA IEBO - - 0.1 µA V(BR)CBO 80 - - V V(BR)CEO 60 - - V V(BR)EBO 8 - - V VCEsat - - 0.4 V VBEsat - - 1.1 V fT 30 - - MHz Cob - 8 - pF SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 27/03/2009 ST 2SC1008 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 27/03/2009