STGP7NB120SD N-CHANNEL 7A - 1200V - TO-220 PowerMESH™ IGBT TYPE VCES VCE(sat) IC STGP7NB120SD 1200 V < 2.1 V 7A ■ ■ ■ ■ HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) VERY LOW ON-VOLTAGE DROP (Vcesat) OFF LOSSES INCLUDE TAIL CURRENT HIGH CURRENT CAPABILITY 3 1 DESCRIPTION 2 TO-220 Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “S” identifies a family optimized achieve minimum on-voltage drop for low frequency applications (<1kHz). INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ MOTOR CONTROL ■ LIGHT DIMMER ■ INTRUSH CURRENT LIMITATION ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit 1200 V Reverse Battery Protection 20 V Gate-Emitter Voltage ±20 V IC Collector Current (continuous) at TC = 25°C 10 A IC Collector Current (continuous) at TC = 100°C 7 A Collector Current (pulsed) 20 A Total Dissipation at TC = 25°C 90 W VCES Collector-Emitter Voltage (VGS = 0) VECR VGE ICM () PTOT Derating Factor Tstg Tj Storage Temperature Max. Operating Junction Temperature 0.7 W/°C –65 to 150 °C 150 °C (● ) Pulse width limited by safe operating area November 2002 1/8 STGP7NB120SD THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 1.38 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W Thermal Resistance Case-heatsink Typ 0.5 °C/W Rthc-h ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit VBR(CES) Collector-Emitter Breakdown Voltage IC = 250 µA, VGE = 0 1200 V VBR(ECR) Emitter-Collector Breakdown Voltage IC = 10mA, VGE = 0 20 V Collector cut-off (VGE = 0) VCE = Max Rating, TC = 25 °C 50 µA VCE = Max Rating, TC = 125 °C 250 µA VGE = ±20V , VCE = 0 ±100 nA Max. Unit ICES IGES Gate-Emitter Leakage Current (VCE = 0) ON (1) Symbol Parameter Test Conditions VGE(th) Gate Threshold Voltage VCE = VGE, IC = 250µA VCE(sat) Collector-Emitter Saturation Voltage VGE = 15V, VGE = 15V, VGE = 15V, Min. Typ. 3 IC = 3.5 A IC = 7 A IC = 10 A 5 V 1.6 2.1 V V V Max. Unit 1.7 DYNAMIC Symbol gfs Cies Coes Cres Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VCE = 25 V , IC =7 A Min. Typ. 2.5 4.5 S 430 40 7 pF pF pF 29 nC VCE = 25V, f = 1 MHz, VGE = 0 Qg Gate Charge VCE = 960V, IC = 7 A, VGE = 15V ICL Latching Current Vclamp = 960V , Tj = 150°C RG = 1KΩ 10 A SWITCHING ON Symbol td(on) tr (di/dt)on Eon 2/8 Parameter Test Conditions Min. Typ. Max. Unit Turn-on Delay Time Rise Time VCC = 960 V, IC = 7 A RG = 1KΩ , VGE = 15 V 570 270 ns ns Turn-on Current Slope Turn-on Switching Losses VCC= 960 V, IC = 7 A, RG=1KΩ VGE = 15 V, Tj = 125°C 800 3.2 A/µs mJ STGP7NB120SD ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING OFF Symbol tc tr(Voff) tf Eoff(**) tc tr(Voff) tf Eoff(**) Parameter Test Conditions Min. Typ. Max. Unit 4.9 µs 2.9 µs Fall Time 3.3 µs Turn-off Switching Loss 15 mJ 7.5 µs 5.5 µs Fall Time 6.2 µs Turn-off Switching Loss 22 mJ Cross-over Time Off Voltage Rise Time Cross-over Time Off Voltage Rise Time Vcc = 960 V, IC = 7 A, RGE = 1KΩ , VGE = 15 V Vcc = 960 V, IC = 7 A, RGE = 1KΩ , VGE = 15 V Tj = 125 °C COLLECTOR-EMITTER DIODE Symbol Parameter Test Conditions Min. Typ. If Ifm Forward Current Forward Current pulsed Vf Forward On-Voltage If =3.5 A If = 3.5 A, Tj = 125 °C 1.7 1.5 Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current If = 3.5 A ,VR = 600 V, Tj =125°C, di/dt = 100A/µs 190 850 9 trr Qrr Irrm Max. Unit 3.5 28 A A 2.0 V V ns nC A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by max. junction temperature. (**)Losses include Also the Tail (Jedec Standardization) 3/8 STGP7NB120SD Thermal Impedance Turn-Off Energy Losses vs Temperature Output Characteristics Transfer Characteristics Normalized Gate Threshold Voltage vs Temp. Transconductance 4/8 STGP7NB120SD Collector-Emitter On Voltage vs Temperature Gate-Charge vs Gate-Emitter Voltage Capacitance Variations Diode Forward Voltage Collector-Emitter On Voltage vs Collector Current 5/8 STGP7NB120SD Fig. 1: Gate Charge test Circuit 6/8 Fig. 2: Test Circuit For Inductive Load Switching STGP7NB120SD TO-220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 0.107 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 L2 16.4 0.645 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 D1 C D A E L4 H2 G G1 F1 L2 F2 F Dia. L5 L9 L7 L6 L4 P011C 7/8 STGP7NB120SD Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a registered trademark of STMicroelectronics © 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. © http://www.st.com 8/8