STGD7NB60S ® N-CHANNEL 7A - 600V DPAK Power MESH IGBT TYPE V CES V CE(sat) IC STGD7NB60S 600 V < 1.6 V 7A ■ ■ ■ ■ ■ HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) VERY LOW ON-VOLTAGE DROP (Vcesat) HIGH CURRENT CAPABILITY OFF LOSSES INCLUDE TAIL CURRENT SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") 3 1 DPAK TO-252 (Suffix "T4") DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH IGBTs, with outstanding perfomances. The suffix "S" identifies a family optimized to achieve minimum on-voltage drop for low frequency applications (<1kHz). INTERNAL SCHEMATIC DIAGRAM APPLICATIONS LIGHT DIMMER ■ STATIC RELAYS ■ MOTOR CONTROL ■ ABSOLUTE MAXIMUM RATINGS Symbol Value Unit V CES Collector-Emitter Voltage (V GS = 0) Parameter 600 V V ECR Reverse Battery Protection 20 V V GE Gate-Emitter Voltage ± 20 V 15 A 7 A 60 A 55 W 0.44 W/ o C o IC Collector Current (continuous) at T c = 25 C IC Collector Current (continuous) at T c = 100 o C ICM (•) P tot Collector Current (pulsed) o Total Dissipation at T c = 25 C Derating Factor T stg Tj Storage Temperature Max. Operating Junction Temperature -65 to 150 o C 150 o C (•) Pulse width limited by safe operating area November 1999 1/8 STGD7NB60S THERMAL DATA R thj-case R thj-amb R thc-sink Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink o 2.27 100 1.5 Max Max Typ C/W C/W o C/W o ELECTRICAL CHARACTERISTICS (Tj = 25 oC unless otherwise specified) OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit V BR(CES) Collector-Emitter Breakdown Voltage I C = 250 µA V GE = 0 600 V V BR(ECR) Emitter-Collector Breakdown Voltage IC = 1 mA V GE = 0 20 V I CES Collector cut-off (V GE = 0) V CE = Max Rating V CE = Max Rating IGES Gate-Emitter Leakage Current (V CE = 0) V GE = ± 20 V 10 100 µA µA ± 100 nA Max. Unit 5 V 1 1.2 1.1 1.4 1.6 V V V Typ. Max. Unit T j = 25 o C T j = 125 o C V CE = 0 ON (∗) Symbol V GE(th) V CE(SAT) Parameter Test Conditions Gate Threshold Voltage V CE = V GE I C = 250 µA Collector-Emitter Saturation Voltage V GE = 15 V V GE = 15 V V GE = 15 V IC = 3 A IC = 7 A IC = 7 A Min. Typ. 2.5 T j = 125 o C DYNAMIC Symbol gf s Parameter Test Conditions Forward Transconductance V CE =25 V IC = 7 A Input Capacitance Output Capacitance Reverse Transfer Capacitance V CE = 25 V f = 1 MHz QG Gate Charge V CE = 400 V I CL Latching Current V clamp = 480 V T j = 150 o C C ies C oes C res IC = 7 A Min. 4 V GE = 0 610 65 12 V GE = 15 V R G =1kΩ S 780 85 15 33 pF pF pF nC 15 A SWITCHING ON Symbol t d(on) tr (di/dt) on E on 2/8 Parameter Test Conditions Min. Typ. Max. Unit Delay Time Rise Time V CC = 480 V V GE = 15 V IC = 7 A R G = 1 KΩ 0.7 0.46 µs µs Turn-on Current Slope V CC = 480 V R G = 1 KΩ T j = 125 o C IC = 7 A V GE = 15 V 8 A/µs 0.4 mJ Turn-on Switching Losses STGD7NB60S ELECTRICAL CHARACTERISTICS (continued) SWITCHING OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit tc t r (v off ) tf E off (**) V CC = 480 V Cross-Over Time Off Voltage Rise Time R GE = 100 Ω Fall Time Turn-off Switching Loss IC = 7 A V GE = 15 V 2.2 1.2 1.2 3.5 µs µs µs mJ tc t r (v off ) tf E off (**) V CC = 480 V Cross-Over Time Off Voltage Rise Time R GE = 100 Ω Fall Time T j = 125 o C Turn-off Switching Loss IC = 7 A V GE = 15 V 3.8 1.2 1.9 5.3 µs µs µs mJ (•) Pulse width limited by safe operating area (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (**)Losses Include Also The Tail (Jedec Standardization) Thermal Impedance 3/8 STGD7NB60S Output Characteristics Transfer Characteristics Transconductance Collector-Emitter On Voltage vs Temperature Collector-Emitter On Voltage vs Collector Current Gate Threshold vs Temperature 4/8 STGD7NB60S Normalized Breakdown Voltage vs Temperature Capacitance Variations Gate Charge vs Gate-Emitter Voltage Off Losses vs Gate Resistance Off Losses vs Temperature Off Losses vs Collector Current 5/8 STGD7NB60S Switching Off Safe Operatin Area Fig. 1: Gate Charge test Circuit Fig. 3: Switching Waveforms 6/8 Fig. 2: Test Circuit For Inductive Load Switching STGD7NB60S TO-252 (DPAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 2.2 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.9 0.025 0.035 B2 5.2 5.4 0.204 0.212 C 0.45 0.6 0.017 0.023 C2 0.48 0.6 0.019 0.023 D 6 6.2 0.236 0.244 E 6.4 6.6 0.252 0.260 G 4.4 4.6 0.173 0.181 H 9.35 10.1 0.368 0.397 L2 0.8 L4 0.031 0.6 1 0.023 0.039 A1 C2 A H A2 C DETAIL "A" L2 D = 1 = G 2 = = = E = B2 3 B DETAIL "A" L4 0068772-B 7/8 STGD7NB60S Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 1999 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. 8/8 http://www.st.com .