STK1828SF Semiconductor N-Channel Enhancement-Mode MOSFET Description • High speed switching application. • Analog switch application. Features • 2.5V Gate drive. • Low threshold voltage : Vth = 0.5~1.5V. • High speed. Ordering Information Type NO. Marking STK1828SF Package Code K28 SOT-23F Outline Dimensions unit : mm 2.4±0.1 1.6±0.1 1.90 BSC KST-2123-000 0.9±0.1 0.15±0.05 2 0.4±0.05 3 0~0.1 2.9±0.1 1 PIN Connections 1. Gate 2. Source 3. Drain 1 STK1828SF Absolute maximum ratings (Ta=25°C) Characteristic Symbol Ratings Unit Drain-Source voltage VDS 20 V Gate-Source voltage VGSS 10 V DC Drain current ID 50 mA Drain Power dissipation PD 200 mW Channel temperature Tch 150 °C Storage temperature range Tstg -55~150 °C Electrical Characteristics Characteristic Drian-Source breakdown voltage (Ta=25°C) Symbol BVDSS Test Condition Min. Typ. Max. ID=100µA, VGS=0 20 0.5 Gate-Threshold voltage Vth ID=0.1mA, VDS=3V Drain cut-off current IDSS Gate leakage current IGSS Unit V 1.5 V VDS=20V, VGS=0 1 µA VGS=10V, VDS=0 1 µA 40 Ω Drain-Source on-resistance RDS(ON) VGS=2.5V, ID=10mA Forward transfer admittance ｜Yfs｜ VDS=3V, ID=10mA 20 20 mS Input capacitance Ciss VDS=3V, VGS=0, f=1MHz 5.5 pF Output capacitance Coss VDS=3V, VGS=0, f=1MHz 6.5 pF Reverse Transfer capacitance Crss VDS=3V, VGS=0, f=1MHz 1.6 pF 0.14 ㎲ 0.14 ㎲ Turn-on time tON Turn-off time tOFF VDD=3V, ID=10mA VGEN=0~2.5V VDD=3V, ID=10mA VGEN=0~2.5V KST-2123-000 2 STK1828SF Electrical Characteristic Curves Fig.2 ID - VDS Fig.1 ID - VDS ℃ ℃ Fig.4 ID - VGS Fig.3 IDR - VDS ℃ 155 ℃ - ℃ ℃ Fig.5 │Yfs│- ID Fig.6 C - VDS ℃ │ │ ℃ KST-2123-000 3 STK1828SF Electrical Characteristic Curves Fig.7 VDS - ID Fig.8 t - ID Ω ℃ ℃ Fig.9 PD - Ta KST-2123-000 4