SEMICONDUCTOR KTK5164U TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR ULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS E FEATURES ・2.5 Gate Drive. ・Low Threshold Voltage : Vth=0.5～1.5V. ・High Speed. ・Small Package. ・Enhancement-Mode. M B M D J A 2 G H L C 3 1 MAXIMUM RATINGS (Ta=25℃) CHARACTERISTIC N RATING UNIT Drain-Source Voltage VDS 60 V Gate-Source Voltage VGSS ±20 V 2. GATE DC Drain Current ID 200 mA 3. DRAIN Drain Power Dissipation PD 100 mW Channel Temperature Tch 150 ℃ Storage Temperature Range Tstg -55～150 ℃ MILLIMETERS _ 0.20 2.00 + _ 0.15 1.25+ _ 0.10 0.90 + 0.3+0.10/-0.05 _ 0.20 2.10 + 0.65 0.15+0.1/-0.06 1.30 0.00-0.10 0.70 _ 0.10 0.42 + 0.10 MIN N K SYMBOL DIM A B C D E G H J K L M N 1. SOURCE USM EQUIVALENT CIRCUIT D Marking Lot No. G Type Name KF S THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE. PLEASE HANDLE WITH CAUTION. ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL IGSS Gate Leakage Current TEST CONDITION VGS=±16V, VDS=0V MIN. TYP. MAX. UNIT - - ±1 μA V(BR)DSS ID=100μA, VGS=0V 60 - - V Drain Cut-off Current IDSS VDS=60V, VGS=0V - - 1 μA Gate Threshold Voltage Vth VDS=10V, ID=1mA 0.5 - 1.5 V Forward Transfer Admittance |Yfs| VDS=10V, ID=50mA 100 - - mS Drain-Source ON Resistance RDS(ON) ID=50mA, VGS=2.5V Drain-Source Breakdown Voltage - 1.5 2 Ω Input Capacitance Ciss VDS=10V, VGS=0V, f=1MHz - 55 65 pF Reverse Transfer Capacitance Crss VDS=10V, VGS=0V, f=1MHz - 13 18 pF Output Capacitance Coss VDS=10V, VGS=0V, f=1MHz - 40 50 pF - 8 - - 14 - - 35 - - 75 - 10V Turn-on Time ton 0 Fall Time tf Turn-off Time toff Switching Time 2008. 8. 11 Revision No : 0 I D =100mA V OUT VIN 10µs V IN :t r , t f < 5ns D.U. < = 1% (Z OUT =50Ω) RL tr 50Ω Rise Time V DD = 30V nS 1/3 KTK5164U I D - VDS I D - V DS 2.2V 200 COMMON SOURCE Ta=25 C 160 DRAIN CURRENT I D (mA) DRAIN CURRENT I D (mA) 200 (LOW VOLTAGE REGION) 2.0V 120 1.8V 80 40 1.6V VGS =1.4V 0 0 4 8 12 2.2V 160 2.0V 120 80 1.8V 40 1.6V VGS =1.4V 0 16 20 0 DRAIN CURRENT I D (mA) COMMON SOURCE VDS =10V Ta=25 C 1.6 2.0 COMMON SOURCE VDS =10V Ta=25 C 100 10 1 0.1 10 1 10 100 2 3 DRAIN CURRENT I D (mA) C - V DS VDS(ON) - I D COMMON SOURCE VGS =0 f=1MHz Ta=25 C 300 100 C iss 50 30 Coss C rss 10 5 3 0.1 1 GATE-SOURCE VOTAGE VGS (V) 500 CAPACITANCE C (pF) 1.2 I D - V GS 100 0.3 0.5 1 3 5 10 DRAIN-SOURCE VOLTAGE V DS (V) 2008. 8. 11 0.8 - ID Revision No : 0 30 50 DRAIN-SOURCE ON VOLTAGE V DS(ON) (mV) FORWARD TRANSFER ADMITTANCE Yfs (mS) 1K 0.4 GATE-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE V DS (V) Yfs COMMON SOURCE Ta=25 C 300 4 5 COMMON SOURCE VGS =0 f=1MHz Ta=25 C 100 50 30 10 5 10 30 50 100 300 DRAIN CURRENT I D (mA) 2/3 KTK5164U t - ID 1K VGS =0 Ta=25 C 0.3 D 0.1 I DR G S 0.03 0.01 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 300 t off 100 tf 30 t on tr 10 3 1 0.3 0.01 ID 10V 0 V IN 10µs D.U. < = 1% VIN :t r , t f < 5ns (Z OUT =50Ω) COMMON SOURCE Ta=25 C VOUT RL COMMON SOURCE 1 50Ω 2 SWITCHING TIME t (ns) DRAIN REVERSE CURRENT I DR (A) I DR - VDS VDD 0.03 0.05 0.1 0.3 0.5 DRAIN CURRENT I D (mA) DRAIN-SOURCE VOTAGE V DS (V) DRAIN POWER DISSIPATION PD (mW) P D - Ta 300 250 200 150 100 50 0 0 20 40 60 80 100 120 140 160 AMBIENT TEMPERATURE Ta ( C) 2008. 8. 11 Revision No : 0 3/3