STK3NA60 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE ST K3NA60 ■ ■ ■ ■ ■ ■ ■ V DSS R DS(on) ID 600 V <4 Ω 2.7 A TYPICAL RDS(on) = 3.3 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE GHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD 1 2 3 SOT82 APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITCH MODE POWER SUPPLIES (SMPS) ■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Value Uni t V DS Drain-source Voltage (V GS = 0) Parameter 600 V VDGR Drain- gate Voltage (R GS = 20 kΩ) 600 V V GS Gate-source Voltage ± 30 V o ID Drain Current (continuous) at T c = 25 C 2.7 A ID Drain Current (continuous) at T c = 100 C o 1.8 A Drain Current (pulsed) 10.8 A I DM (•) P t ot o Total Dissipation at T c = 25 C Derating Factor T stg Tj St orage Temperature Max. Operating Junction Temperature 60 W 0.48 W/ o C -65 to 150 o C 150 o C (•) Pulse width limited by safe operating area March 1996 1/9 STK3NA60 THERMAL DATA R t hj-ca se R t hj- amb R thc- si nk Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead T emperature For Soldering Purpose Max Max Typ o 2.08 62.5 0.5 300 C/W C/W o C/W o C o AVALANCHE CHARACTERISTICS Symb ol Parameter Max Valu e Unit I AR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, δ < 1%) 2.7 A E AS Single Pulse Avalanche Energy o (starting Tj = 25 C, ID = I AR , V DD = 50 V) 40 mJ E AR Repetitive Avalanche Energy (pulse width limited by Tj max, δ < 1%) 1.6 mJ I AR Avalanche Current, Repetitive or Not-Repetitive o (T c = 100 C, pulse width limited by Tj max, δ < 1%) 1.8 A ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symb ol V (BR)DSS Parameter Drain-source Breakdown Voltage Test Cond ition s I D = 250 µA VGS = 0 Min. Typ . Max. 600 Un it V I DSS Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating x 0.8 T c = 125 o C 250 1000 µA µA I GSS Gate-body Leakage Current (V DS = 0) V GS = ± 30 V ± 100 nA ON (∗) Symb ol Parameter Test Cond ition s V GS(th) Gate T hreshold Voltage V DS = VGS ID = 250 µA R DS( on) Static Drain-source On Resistance V GS = 10V V GS = 10V I D = 1.5 A ID = 1.5 A On State Drain Current V DS > I D(on) x R DS(on) max V GS = 10 V ID(o n) Min. Typ . Max. Un it 2.25 3 3.75 V 3.3 4 8 Ω Ω Tc = 100 oC 2.9 A DYNAMIC Symb ol g fs (∗) C iss C oss C rss 2/9 Parameter Test Cond ition s Forward Transconductance V DS > I D(on) x R DS(on) max Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25 V f = 1 MHz I D = 1.5 A VGS = 0 Min. Typ . 1 2 380 57 17 Max. Un it S 500 75 23 pF pF pF STK3NA60 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symb ol t d(on) tr (di/dt) on Qg Q gs Q gd Typ . Max. Un it Turn-on T ime Rise Time Parameter V DD = 300 V ID = 1.5 A VGS = 10 V R G = 18 Ω (see test circuit, figure 3) Test Cond ition s Min. 14 25 20 35 ns ns Turn-on Current Slope V DD = 400 V ID = 3 A R G = 18 Ω VGS = 10 V (see test circuit, figure 5) 300 Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD = 480 V 22 6 9 30 nC nC nC Typ . Max. Un it 13 24 12 18 34 17 ns ns ns Typ . Max. Un it 2.7 10.8 A A 1.6 V I D = 3 A V GS = 10 V A/µs SWITCHING OFF Symb ol t r(Vof f) tf tc Parameter Off-voltage Rise Time Fall T ime Cross-over T ime Test Cond ition s Min. V DD = 480 V ID = 3 A VGS = 10 V R G = 18 Ω (see test circuit, figure 5) SOURCE DRAIN DIODE Symb ol Parameter Test Cond ition s I SD I SDM (•) Source-drain Current Source-drain Current (pulsed) V SD (∗) Forward O n Voltage I SD = 2.7 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 3 A di/dt = 100 A/µs o T j = 150 C V DD = 100 V (see test circuit, figure 5) t rr Q rr I RRM Min. V GS = 0 460 ns 5.6 µC 24 A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area Safe Operating Area Thermal Impedance 3/9 STK3NA60 Derating Curve Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage 4/9 STK3NA60 Capacitance Variations Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature Turn-on Current Slope Turn-off Drain-source Voltage Slope Cross-over Time 5/9 STK3NA60 Switching Safe Operating Area Accidental Overload Area Source-drain Diode Forward Characteristics Fig. 1: Unclamped Inductive Load Test Circuit 6/9 Fig. 2: Unclamped Inductive Waveform STK3NA60 Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And DIode Recovery Times 7/9 STK3NA60 SOT-82 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 7.4 7.8 0.291 0.307 B 10.5 11.3 0.413 0.445 b 0.7 0.9 0.028 0.035 b1 0.49 0.75 0.019 0.030 C 2.4 2.7 0.04 0.106 c1 1.2 0.047 D 15.7 0.618 e 2.2 0.087 e3 4.4 0.173 F 3.8 0.150 H 2.54 0.100 C D H B F A c1 b e b1 e3 8/9 P032A STK3NA60 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1995 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 9/9