STMICROELECTRONICS STW20NM60FD

STF20NM60D - STP20NM60FD
STW20NM60FD
N-channel 600V - 0.26Ω - 20A - TO-220 - TO-220FP - TO-247
FDmesh™ Power MOSFET (with fast diode)
General features
Type
VDSS
RDS(on)
ID
Pw
STF20NM60D
600V
<0.29Ω
20A
192W
STP20NM60FD
600V
<0.29Ω
20A
45W
STW20NM60FD
600V
<0.29Ω
20A
214W
■
High dv/dt and avalanche capabilities
■
100% Avalanche tested
■
Low input capacitance and gate charge
3
1
TO-220FP
TO-247
3
1
■
Low gate input resistancE
■
Tight process control and high manufacturing
yields
2
2
TO-220
Internal schematic diagram
Description
The FDmesh™ associates all advantages of
reduced on-resistance and fast switching with an
intrinsic fast-recovery body diode. It is therefore
strongly recommended for bridge topologies, in
particular ZVS phase-shift converters.
Applications
■
Switching application
Order codes
Part number
Marking
Package
Packaging
STF20NM60D
F20NM60D
TO-220FP
Tube
STP20NM60FD
P20NM60FD
TO-220
Tube
STW20NM60FD
W20NM60FD
TO-247
Tube
August 2006
Rev 4
1/15
www.st.com
15
Contents
STF20NM60D - STP20NM60FD - STW20NM60FD
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................ 6
3
Test circuit
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
2/15
................................................ 9
STF20NM60D - STP20NM60FD - STW20NM60FD
1
Electrical ratings
Electrical ratings
Table 1.
Absolute maximum ratings
Value
Symbol
Parameter
Unit
TO-220
VDS
VDGR
VGS
ID
IDM
PTOT
dv/dt
600
V
Drain-gate voltage (RGS = 20 kΩ)
600
V
Gate- source voltage
± 30
Drain current (continuous) at TC = 100°C
(2)
(3)
TO-247
Drain-source voltage (VGS = 0)
Drain current (continuous) at TC = 25°C
ID
TO-220FP
20
20
12.6
V
(1)
12.6
80
(1)
(1)
20
A
12.6
A
80
A
Drain current (pulsed)
80
Total dissipation at TC = 25°C
192
45
214
W
Derating factor
1.20
0.36
1.42
W/°C
Peak diode recovery voltage slope
VISO
Insulation withstand voltage (DC)
Tj
Tstg
Operating junction temperature
Storage temperature
20
-
V/ns
2500
-
V
°C
°C
– 65 to 150
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD < 20A, di/dt < 400A/µs, VDD = 80%V(BR)DSS
Table 2.
Thermal resistance
Value
Symbol
Parameter
Rthj-case Thermal resistance junction-case Max
Rthj-amb Thermal resistance junction-ambient Max
Tl
Table 3.
Symbol
Maximum lead temperature for soldering
purpose
Unit
TO-220
TO-220FP
TO-247
0.65
2.8
0.585
°C/W
30
°C/W
62.5
300
°C
Avalanche data
Parameter
Value
Unit
IAR
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
10
A
EAS
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAR, VDD = 35 V)
700
mJ
3/15
Electrical characteristics
2
STF20NM60D - STP20NM60FD - STW20NM60FD
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 4.
Symbol
On/off states
Parameter
Test conditions
Min
Typ Max Unit
Drain-source breakdown
voltage
ID = 250µA, VGS = 0
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = Max rating
VDS = Max rating, TC = 125 °C
1
10
µA
µA
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ±30V
±10
0
µA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250µA
5
V
RDS(on)
Static drain-source on
resistance
VGS = 10V, ID = 10A
V(BR)DSS
Table 5.
Symbol
600
3
V
4
Ω
0.26 0.29
Dynamic
Parameter
Test conditions
gfs (1)
Forward transconductance
VDS > ID(on) x RDS(on)max,
ID = 10A
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer capacitance
VDS = 25V, f = 1 MHz, VGS = 0
Coss eq. (2) Equivalent output capacitance VGS = 0V, VDS = 0V to 480V
Min
Typ Max Unit
9
S
1300
500
35
pF
pF
pF
190
pF
Ω
RG
Gate input resistance
f=1 MHz Gate DC Bias = 0
Test signal level = 20mV
open drain
2.7
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 480V, ID = 20A,
VGS = 10V
(see Figure 17)
37
10
17
52
nC
nC
nC
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80%
4/15
STF20NM60D - STP20NM60FD - STW20NM60FD
Table 6.
Symbol
Electrical characteristics
Switching times
Parameter
Test conditions
Min.
Typ.
Max. Unit
td(on)
tr
Turn-on delay time
Rise time
VDD = 300V, ID = 10A
RG = 4.7Ω VGS = 10V
(see Figure 16)
25
12
ns
ns
tr(Voff)
tf
tc
Off-voltage rise time
Fall time
Cross-over time
VDD = 480 V, ID = 20A,
RG = 4.7Ω, VGS = 10V
(see Figure 16)
8
22
30
ns
ns
ns
Table 7.
Symbol
ISD
ISDM
(1)
VSD (2)
trr
Qrr
IRRM
trr
Qrr
IRRM
Source drain diode
Parameter
Test conditions
Min
Typ.
Source-drain current
Source-drain current (pulsed)
Max
Unit
20
80
A
A
1.5
V
Forward on voltage
ISD = 20 A, VGS = 0
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 20 A, Tj = 25°C
di/dt =100A/µs,VDD=60V
(see Figure 21)
240
1800
16
ns
nC
A
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 20 A, Tj = 150°C
di/dt =100A/µs,VDD=60V
(see Figure 21)
396
2960
20
ns
nC
A
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
5/15
Electrical characteristics
STF20NM60D - STP20NM60FD - STW20NM60FD
2.1
Electrical characteristics (curves)
Figure 1.
Safe operating area for TO-220
Figure 2.
Thermal impedance for TO-220
Figure 3.
Safe operating areafor TO-220FP
Figure 4.
Thermal impedance for TO-220FP
Figure 5.
Safe operating area for TO-247
Figure 6.
Thermal impedance for TO-247
6/15
STF20NM60D - STP20NM60FD - STW20NM60FD
Electrical characteristics
Figure 7.
Output characterisics
Figure 8.
Transfer characteristics
Figure 9.
Transconductance
Figure 10. Static drain-source on resistance
Figure 11. Gate charge vs gate-source voltage Figure 12. Capacitance variations
7/15
Electrical characteristics
STF20NM60D - STP20NM60FD - STW20NM60FD
Figure 13. Normalized gate threshold voltage
vs temperature
Figure 14. Normalized on resistance vs
temperature
Figure 15. Source-drain diode forward
characteristics
8/15
STF20NM60D - STP20NM60FD - STW20NM60FD
3
Test circuit
Test circuit
Figure 16. Switching times test circuit for
resistive load
Figure 17. Gate charge test circuit
Figure 18. Test circuit for inductive load
Figure 19. Unclamped inductive load test
switching and diode recovery times
circuit
Figure 20. Unclamped inductive waveform
Figure 21. Switching time waveform
9/15
Package mechanical data
4
STF20NM60D - STP20NM60FD - STW20NM60FD
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at : www.st.com
10/15
STF20NM60D - STP20NM60FD - STW20NM60FD
Package mechanical data
TO-220 MECHANICAL DATA
DIM.
mm.
MIN.
TYP
inch
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
b
0.61
0.88
0.024
0.034
b1
1.15
1.70
0.045
0.066
c
0.49
0.70
0.019
0.027
D
15.25
15.75
0.60
0.620
E
10
10.40
0.393
0.409
e
2.40
2.70
0.094
0.106
e1
4.95
5.15
0.194
0.202
F
1.23
1.32
0.048
0.052
H1
6.20
6.60
0.244
0.256
J1
2.40
2.72
0.094
0.107
0.551
L
13
14
0.511
L1
3.50
3.93
0.137
L20
16.40
L30
0.154
0.645
28.90
1.137
øP
3.75
3.85
0.147
0.151
Q
2.65
2.95
0.104
0.116
11/15
Package mechanical data
STF20NM60D - STP20NM60FD - STW20NM60FD
TO-247 MECHANICAL DATA
DIM.
mm.
MIN.
inch
MAX.
MIN.
TYP.
MAX.
A
4.85
5.15
0.19
0.20
A1
2.20
2.60
0.086
0.102
b
1.0
1.40
0.039
0.055
b1
2.0
2.40
0.079
0.094
0.134
b2
3.0
3.40
0.118
c
0.40
0.80
0.015
0.03
D
19.85
20.15
0.781
0.793
E
15.45
15.75
0.608
e
5.45
0.620
0.214
L
14.20
14.80
0.560
L1
3.70
4.30
0.14
L2
18.50
0.582
0.17
0.728
øP
3.55
3.65
0.140
0.143
øR
4.50
5.50
0.177
0.216
S
12/15
TYP
5.50
0.216
STF20NM60D - STP20NM60FD - STW20NM60FD
Package mechanical data
TO-220FP MECHANICAL DATA
mm.
DIM.
MIN.
A
4.4
inch
TYP
MAX.
MIN.
TYP.
4.6
0.173
0.181
MAX.
0.106
B
2.5
2.7
0.098
D
2.5
2.75
0.098
0.108
E
0.45
0.7
0.017
0.027
F
0.75
1
0.030
0.039
F1
1.15
1.7
0.045
0.067
F2
1.15
1.7
0.045
0.067
G
4.95
5.2
0.195
0.204
G1
2.4
2.7
0.094
0.106
H
10
10.4
0.393
0.409
L2
16
0.630
L3
28.6
30.6
1.126
1.204
L4
9.8
10.6
.0385
0.417
L5
2.9
3.6
0.114
0.141
L6
15.9
16.4
0.626
0.645
9
9.3
0.354
0.366
Ø
3
3.2
0.118
0.126
B
D
A
E
L7
L3
L6
F2
H
G
G1
F
F1
L7
L2
L5
1 2 3
L4
13/15
Revision history
5
STF20NM60D - STP20NM60FD - STW20NM60FD
Revision history
Table 8.
14/15
Revision history
Date
Revision
Changes
09-Sep-2004
1
First release
21-Apr-2006
2
New template
25-Jul-2006
3
Modified part number
01-Aug-2006
4
Corrected unit on Table 5.: Dynamic
STF20NM60D - STP20NM60FD - STW20NM60FD
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