TCV7103AF TOSHIBA CMOS Integrated Circuit Silicon Monolithic TCV7103AF Buck DC-DC Converter IC The TCV7103AF is a single-chip buck DC-DC converter IC. The TCV7103AF contains high-speed and low-on-resistance power MOSFETs to achieve synchronous rectification using an external low-side MOSFET, or rectification using an external diode, allowing for high efficiency. Features • Enables up to 6.5A (@ VIN = 5V)／6A (@ VIN = 3.3V) of load current (IOUT) with a minimum of external components. • High efficiency: η = 95% (typ.)(@VIN = 5V, VOUT = 3.3V, IOUT = 2A) (when using the SSM6K411TU as a low-side MOSFET) • Operating voltage range: VIN = 2.7V to 5.6V • Low ON-resistance: RDS (ON) = 0.08Ω (high-side) typical (@VIN = 5V, Tj = 25°C) HSON8-P-0505-1.27 Weight: 0.068 g (typ.) • Oscillation frequency: fOSC = 1000kHz (typ.) • Feedback voltage: VFB = 0.8V ± 1% (@ Tj = 0 to 85 °C) • Incorporates an N-channel MOSFET driver for synchronous rectification • Uses internal phase compensation to achieve high efficiency with a minimum of external components. • Allows the use of a small surface-mount ceramic capacitor as an output filter capacitor. • Housed in a small surface-mount package (SOP Advance) with a low thermal resistance. • Soft-start time adjustable by an external capacitor • Overcurrent protection (OCP) with latch function Part Marking Pin Assignment Part Number (or abbreviation code) LX 8 LSG EN 7 6 VFB 5 Lot No. TCV 7103AF The dot (•) on the top surface indicates pin 1. *: 1 2 3 4 VIN1 VIN2 SS GND The lot number consists of three digits. The first digit represents the last digit of the year of manufacture, and the following two digits indicates the week of manufacture between 01 and either 52 or 53. Manufacturing week code (The first week of the year is 01; the last week is 52 or 53.) Manufacturing year code (last digit of the year of manufacture) This product has a MOS structure and is sensitive to electrostatic discharge. Handle with care. The product(s) in this document (“Product”) contain functions intended to protect the Product from temporary small overloads such as minor short-term overcurrent, or overheating. The protective functions do not necessarily protect Product under all circumstances. When incorporating Product into your system, please design the system (1) to avoid such overloads upon the Product, and (2) to shut down or otherwise relieve the Product of such overload conditions immediately upon occurrence. For details, please refer to the notes appearing below in this document and other documents referenced in this document. 1 2012-02-28 TCV7103AF Ordering Information Part Number Shipping TCV7103AF (TE12L, Q) Embossed tape (3000 units per reel) Block Diagram VIN2 VIN1 Current detection Slope Compensation ジ Oscillator Under voltage lockout Driver Control logic LX Constant-current source (8 μA) VFB Short-Circuit Protection Error amplifier + SS EN Soft Start + - LSG Phase compensation Ref. Voltage (0.8 V) GND Pin Description Pin No. Symbol 1 VIN1 2 VIN2 Description Input pin for the output section This pin is placed in the standby state if VEN = L. Standby current is 10μA or less. Input pin for the control section This pin is placed in the standby state if VEN = L. Standby current is 10μA or less. Soft-start pin 3 SS 4 GND 5 VFB When the SS input is left open, the soft-start time is 1ms (typ.). The soft-start time can be adjusted with an external capacitor. The external capacitor is charged from a 8μA (typ.) constant-current source, and the reference voltage of the error amplifier is regulated between 0 V and 0.8 V. The external capacitor is discharged when EN = L and in case of undervoltage lockout or thermal shutdown. Ground pin Feedback pin This input is fed into an internal error amplifier with a reference voltage of 0.8V (typ.). Enable pin 6 EN When EN ≥ 1.5V (@ VIN = 5V), the internal circuitry is allowed to operate and thus enable the switching operation of the output section. When EN ≤ 0.5V (@ VIN = 5V), the internal circuitry is disabled, putting the TCV7103AF in Standby mode. Standby current is 10 μA or less. This pin has an internal pull-down resistor of approx. 500kΩ. 7 LSG 8 LX Gate drive pin for the low-side switch Switch pin This pin is connected to high-side P-channel MOSFET. 2 2012-02-28 TCV7103AF Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Input pin voltage for the output section(Note 1) VIN1 −0.3 to 7 V Input pin voltage for the control section(Note 1) VIN2 −0.3 to 7 V Soft-start pin voltage(Note 1) VSS −0.3 to 7 V Feedback pin voltage(Note 1) VFB −0.3 to 7 V Enable pin voltage(Note 1) VEN −0.3 to 7 V VEN-VIN2 VEN – VIN2 < 0.3 V VLSG −0.3 to 7 V Switch pin voltage(Note 2) VLX −0.3 to 7 V Switch pin current ILX −7.8 A Power dissipation(Note 3) PD 2.2 W Tjopr −40 to125 °C Tj 150 °C Tstg −55 to150 °C VEN – VIN2 voltage difference LSG pin voltage(Note 1) Operating junction temperature Junction temperature(Note 4) Storage temperature Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc) Note 1: Using this product continuously may cause a decrease in the reliability significantly even if the operating conditions are within the absolute maximum ratings. Set each pin voltage less than 5.6V taking into consideration the derating. Note 2: The switch pin voltage (VLX) doesn’t include the peak voltage generated by TCV7103AF’s switching. A negative voltage generated in dead time is permitted among the switch pin current (ILX). Thermal Resistance Characteristics Characteristics Symbol Max Unit Thermal resistance, junction to ambient Rth (j-a) 44.6 (Note 3) °C/W Thermal resistance, junction to case (Tc=25℃) Rth (j-c) 4.17 °C/W Note 3: Glass epoxy board FR-4 25.4 × 25.4 × 0.8 (Unit: mm) Single-pulse measurement: pulse width t=10(s) Note 4: The TCV7103AF may enter into thermal shutdown at the rated maximum junction temperature. Thermal design is required to ensure that the rated maximum operating junction temperature, Tjopr, will not be exceeded. 3 2012-02-28 TCV7103AF Electrical Characteristics (Tj = 25°C, VIN1 = VIN2 = 2.7V to 5.6 V, unless otherwise specified) Characteristics Operating input voltage Operating current Symbol Test Condition Min Typ. Max Unit VIN (OPR) ⎯ 2.7 ⎯ 5.6 V VIN1 = VIN2 = VEN = VFB = 5V ⎯ 530 780 μA VOUT(OPR) VEN = VIN1 = VIN2 0.8 ⎯ ⎯ V IIN (STBY) 1 VIN1 = VIN2 = 5V, VEN = 0V VFB = 0.8V ⎯ ⎯ 10 IIN (STBY) 2 VIN1 = VIN2 = 3.3 V, VEN = 0 V VFB = 0.8V ⎯ ⎯ 10 ILEAK (H) VIN1 = VIN2 = 5V, VEN = 0V VFB = 0.8V, VLX = 0V ⎯ ⎯ 10 VIH (EN) 1 VIN1 = VIN2 = 5V 1.5 ⎯ ⎯ VIH (EN) 2 VIN1 = VIN2 = 3.3V 1.5 ⎯ ⎯ VIL (EN) 1 VIN1 = VIN2 = 5V ⎯ ⎯ 0.5 VIL (EN) 2 VIN1 = VIN2 = 3.3V ⎯ ⎯ 0.5 IIH (EN) 1 VIN1 = VIN2 = 5V, VEN = 5V 6 ⎯ 13 IIH (EN) 2 VIN1 = VIN2 = 3.3V, VEN = 3.3V 4 ⎯ 9 IIN Output voltage range Standby current High-side switch leakage current EN threshold voltage EN input current VFB1 VIN1 = VIN2 = 5V, VEN = 5V Tj = 0 to 85℃ 0.792 0.8 0.808 VFB2 VIN1 = VIN2 = 3.3V, VEN = 3.3V Tj = 0 to 85℃ 0.792 0.8 0.808 VFB input voltage VFB input current μA V μA V IFB VIN1 = VIN2 = 2.7V to 5.6V VFB = VIN2 −1 ⎯ 1 RDS (ON) (H) 1 VIN1 = VIN2 = 5V, VEN = 5V ILX = −1.5 A ⎯ 0.08 ⎯ RDS (ON) (H) 2 VIN1 = VIN2 = 3.3V, VEN = 3.3V ILX = −1.5 A ⎯ 0.1 ⎯ High-side switch on-state resistance μA μA Ω On-state resistance of high-side transistor connected to the LSG pin RLSG (ON) (H) VIN1 = VIN2 = 5V ⎯ 0.9 ⎯ On-state resistance of low-side transistor connected to the LSG pin RLSG (ON) (L) VIN1 = VIN2 = 5V ⎯ 0.6 ⎯ VIN1 = VIN2 = VEN = 5V 800 1000 1200 kHz Ω Oscillation frequency fOSC Internal soft-start time tSS VIN1 = VIN2 = 5V, IOUT = 0A, Measured between 0% and 90% points at VOUT. 0.5 1 1.5 ms External soft-start charge current ISS VIN1 = VIN2 = 5V, VEN = 5V -5 -8 -11 μA Dmax VIN1 = VIN2 = 2.7V to 5.6 V ⎯ ⎯ 100 % TSD VIN1 = VIN2 = 5V ⎯ 150 ⎯ Hysteresis ΔTSD VIN1 = VIN2 = 5V ⎯ 15 ⎯ Detection voltage VUV VEN = VIN1 = VIN2 2.35 2.45 2.6 Recovery voltage VUVR VEN = VIN1 = VIN2 2.45 2.55 2.7 Hysteresis ΔVUV VEN = VIN1 = VIN2 ⎯ 0.1 ⎯ ILIM1 VIN1 = VIN2 = 5V, VOUT = 2V 7.3 8.5 ⎯ ILIM2 VIN1 = VIN2 = 3.3V, VOUT = 2V 6.8 8.0 ⎯ OCP latch detection voltage VLOC VIN1 = VIN2 = 5V ⎯ 0.3 ⎯ V OCP latch detection time tLOC VIN1 = VIN2 = 5V, VFB = 0.2V ⎯ 2 ⎯ ms High-side switch duty cycle Thermal shutdown (TSD) Undervoltage lockout (UVLO) Detection temperature LX current limit 4 °C V A 2012-02-28 TCV7103AF Note on Electrical Characteristics The test condition Tj = 25°C means a state where any drifts in electrical characteristics incurred by an increase in the chip’s junction temperature can be ignored during pulse testing. Application Circuit Examples Figure 1 shows a typical application circuit using a low-ESR electrolytic or ceramic capacitor for COUT. When Using the TCV7103AF with an External Low-Side MOSFET: VIN VOUT L VIN1 VIN2 EN Lx RFB1 VFB EN TCV7103AF SS CIN COUT LSG CC Q1 GND RFB2 CSS GND GND When Using the TCV7103AF with an External Schottky Barrier Diode: VOUT L VIN VIN2 EN VIN1 Lx RFB1 VFB EN CIN CC SS TCV7103AF LSG RS COUT SBD GND CS CSS RFB2 GND GND Figure 1 TCV7103AF Typical Application Circuit Examples Component values (reference value@ VIN = 5V, VOUT = 3.3V, Ta = 25°C) Q1: Low-side FET (N-channel MOSFET: SSM6K411TU manufactured by Toshiba Corporation) SBD: Low-side Schottky barrier diode (Schottky barrier diode: CLS01 manufactured by Toshiba Corporation) CIN: Input filter capacitor = 10μF (ceramic capacitor: GRM21BB30J106K manufactured by Murata Manufacturing Co., Ltd.) COUT: Output filter capacitor = 10μF (ceramic capacitor: GRM21BB30J106K manufactured by Murata Manufacturing Co., Ltd.) CC: Decoupling capacitor = 1μF (ceramic capacitor: GRM155B30J105K manufactured by Murata Manufacturing Co., Ltd.) RFB1: Output voltage setting resistor = 7.5kΩ RFB2: Output voltage setting resistor = 2.4kΩ RS: Snubber resistor = 4.7Ω CS: Snubber capacitor = 220pF (ceramic capacitor: GRM1552C1H221J manufactured by Murata Manufacturing Co., Ltd.) L: Inductor = 1μH (VLM10555T-1R2M100-3 or CLF7045T-1R0N manufactured by TDK-EPC Corporation, DS85LCB B1135AS-1R0N or DG8040C 1267AY-1R0N manufactured by TOKO, INC) CSS is a capacitor for adjusting the soft-start time. 5 2012-02-28 TCV7103AF Examples of Component Values (For Reference Only) Output Voltage Setting VOUT Inductance L Input Capacitance CIN Output Capacitance COUT Feedback Resistor RFB1 Feedback Resistor RFB2 1.0 V 1 μH 10 μF 50 μF 7.5 kΩ 30 kΩ 1.2 V 1 μH 10 μF 30 μF 7.5 kΩ 15 kΩ 1.51 V 1 μH 10 μF 30 μF 16 kΩ 18 kΩ 1.8 V 1 μH 10 μF 30 μF 15 kΩ 12 kΩ 2.5 V 1 μH 10 μF 30 μF 5.1 kΩ 2.4 kΩ 3.3 V 1 μH 10 μF 30 μF 7.5 kΩ 2.4 kΩ Component values need to be adjusted, depending on the TCV7103AF’s I/O conditions and the board layout. Application Notes Inductor Selection The inductance required for inductor L can be calculated as follows: VIN: Input voltage (V) VIN − VOUT VOUT VOUT: Output voltage (V) L= ⋅ ············· (1) fosc ⋅ ΔIL VIN fOSC: Oscillation frequency = 1000kHz (typ.) ΔIL: Inductor ripple current (A) *: Generally, ΔIL should be set to approximately 20% of the maximum output current. Since the maximum output current of the TCV7103AF is 6.5A, ΔIL should be 1.3A or so. The inductor should have a current rating greater than the peak output current of 7.2A. If the inductor current rating is exceeded, the inductor becomes saturated, leading to an unstable DC-DC converter operation. L= = VIN − VOUT VOUT ⋅ fosc ⋅ ΔIL VIN 5 V − 3.3 V 3.3 V ⋅ 1000kHz ⋅ 1.3A 5 V ΔIL When VIN = 5V and VOUT = 3.3V, the required inductance can be calculated as follows. Be sure to select an appropriate inductor, taking the input voltage range into account. IL 0 T= = 0.86μH ································ (2) V TON = Τ ⋅ OUT VIN 1 fosc Figure 2 Inductor Current Waveform Setting the Output Voltage A resistive voltage divider is connected as shown in Figure 3 to set the output voltage; it is given by Equation 3 based on the reference voltage of the error amplifier (0.8V typ.), which is connected to the Feedback pin, VFB. RFB1 should be up to 30kΩ or so, because an extremely large-value RFB1 incurs a delay due to parasitic capacitance at the VFB pin. It is recommended that resistors with a precision of ±1% or higher be used for RFB1 and RFB2. LX RFB2 VFB VOUT RFB1 ⎛ ⎞ R VOUT = V FB ⋅ ⎜⎜ 1 + FB1 ⎟⎟ R FB2 ⎠ ⎝ ⎛ R ⎞ = 0.8 V ⋅ ⎜⎜1 + FB1 ⎟⎟ ········ (3) ⎝ R FB2 ⎠ Figure 3 Output Voltage Setting Resistors 6 2012-02-28 TCV7103AF Output Filter Capacitor Selection Use a low-ESR electrolytic or ceramic capacitor as the output filter capacitor. Since a capacitor is generally sensitive to temperature, choose one with excellent temperature characteristics. As a rule of thumb, its capacitance should be 30μF or greater for applications. The capacitance should be set to an optimal value that meets the system’s ripple voltage requirement and transient load response characteristics. The phase margin tends to decrease as the output voltage is getting low. Enlarge a capacitance for output flatness when phase margin is insufficient, or the transient load response characteristics cannot be satisfied. Since the ceramic capacitor has a very low ESR value, it helps reduce the output ripple voltage; however, because the ceramic capacitor provides less phase margin, it should be thoroughly evaluated. Rectifier Selection A low-side switch or Schottky barrier diode should be externally connected to the TCV7103AF. It is recommended that an N-channel MOSFET SSM6K411TU or equivalent be on as a low-side switch. An N-channel MOSFET of a different type can also be used. However, if the switching speed of the external MOSFET is low, a shoot-through current may flow due to the simultaneous conduction of high-side and low-side switches, leading to device failure. Thus, observe the waveform at the LX pin while operating the TCV7103AF with a current close to the rated value to make sure that there is a dead time (the period between the time when the low-side switch is turned off and the high-side switch is turned on) of more than 10ns. Thorough evaluation is required to ensure that the TCV7103AF provides an appropriate dead time even when in the end-product environment. As for the Schottky barrier diode, the CLS01 is recommended to be used. Using a Schottky barrier diode tends to lead to a large voltage overshoot on the LX pin. Thus, a series RC filter consisting of a resistor of RS = 4.7Ω and a capacitor of CS = 220pF should be connected in parallel with the Schottky barrier diode. Power loss of a Schottky barrier diode tends to increase due to an increased reverse current caused by the rise in ambient temperature and self-heating due to a supplied current. The rated current should therefore be derated to allow for such conditions in selecting an appropriate diode. Soft-Start Feature The TCV7103AF has a soft-start feature. If the SS pin is left open, the soft-start time, tSS, for VOUT defaults to 1ms (typ.) internally. The soft-start time can be extended by adding an external capacitor (CSS) between the SS and GND pins. The soft-start time can be calculated as follows: t SS2 = 0.1 ⋅ C SS ····························· (4) tSS2: CSS: Soft-start time (in seconds) when an external capacitor is connected between SS and GND. Capacitor value (μF) The soft-start feature is activated when the TCV7103AF exits the undervoltage lockout (UVLO) state after power-up and when the voltage at the EN pin has changed from logic low to logic high. 7 2012-02-28 TCV7103AF Overcurrent Protection（OCP） TCV7103AF has an overcurrent protection with latch function. When a peak current of LX pin exceeds a ILIM = 8.5A (typ.)@ VIN = 5V, ON time of high-side switch (internal) is limited. When OCP is in operation, and VFB input voltage drops below latch detection voltage VLOC = 0.3V (typ.) for more than latch detection time tLOC = 2ms (typ.), TCV7103AF will halt the output voltage and this state is latched. When the EN pin level changes from high to low, or the input voltage becomes under VUV=2.45V (typ.), releases the latch. While soft-start feature is in operation, OCP does not operate. In the condition with low input voltage, the current limitation value tends to decrease. In the condition of less than VIN =3.8V, please use it below output current IOUT =6.0A (max). ILIM =8.5A (typ.) ILX (peak) VFB VFB =0.8V (typ.) VLOC =0.3V (typ.) Overcurrent period tLOC =2ms(typ.) Output voltage stop Figure 4 Overcurrent Protection Operation Undervoltage Lockout (UVLO) The TCV7103AF has undervoltage lockout (UVLO) protection circuitry. The TCV7103AF does not provide output voltage (VOUT) until the input voltage (VIN2) has reached VUVR = 2.55 V (typ.). UVLO has hysteresis of 0.1 V (typ.). After the switch turns on, if VIN2 drops below VUV = 2.45 V (typ.), UVLO shuts off the switch at VOUT. Undervoltage lockout recovery voltage VUVR VIN2 Undervoltage lockout detection voltage VUV Hysteresis: ΔVUV GND Switching operation starts VOUT GND Switching operation stops Soft start Figure 5 Undervoltage Lockout Operation 8 2012-02-28 TCV7103AF Thermal Shutdown (TSD) The TCV7103AF provides thermal shutdown. When the junction temperature continues to rise and reaches TSD = 150°C (typ.), the TCV7103AF goes into thermal shutdown and shuts off the power supply. TSD has a hysteresis of about 15°C (typ.). The device is enabled again when the junction temperature has dropped by approximately 15°C from the TSD trip point. The device resumes the power supply when the soft-start circuit is activated upon recovery from TSD state. Thermal shutdown is intended to protect the device against abnormal system conditions. It should be ensured that the TSD circuit will not be activated during normal operation of the system. TSD detection temperature: TSD Recovery from TSD Hysteresis: ΔTSD Tj 0 Switching operation starts VOUT GND Switching operation stops Soft start Figure 6 Thermal Shutdown Operation Usage Precautions • The input voltage, output voltage, output current and temperature conditions should be considered when selecting capacitors, inductors and resistors. These components should be evaluated on an actual system prototype for best selection. • Parts of this product in the surrounding are examples of the representative, and the supply might become impossible. Please confirm latest information when using it. • External components such as capacitors, inductors and resistors should be placed as close to the TCV7103AF as possible. • The TCV7103AF has an ESD diode between the EN and VIN2 pins. The voltage between these pins should satisfy VEN − VIN2 < 0.3V. • Add a decoupling capacitor (CC) of 0.1μF to 1 μF between the GND and VIN2 pins. To achieve stable operation, also insert a resistor of about 100 Ω between the VIN2 and VIN1 pins to reduce the ripple voltage at the VIN2 pin. • The minimum programmable output voltage is 0.8V (typ.). If the difference between the input and output voltages is small, the output voltage might not be regulated accurately and fluctuate significantly. • GND pin is connected with the back of IC chip and serves as the heat radiation pin. Secure the area of a GND pattern as large as possible for greater of heat radiation. • The overcurrent protection circuits in the Product are designed to temporarily protect Product from minor overcurrent of brief duration. When the overcurrent protective function in the Product activates, immediately cease application of overcurrent to Product. Improper usage of Product, such as application of current to Product exceeding the absolute maximum ratings, could cause the overcurrent protection circuit not to operate properly and/or damage Product permanently even before the protection circuit starts to operate. • The thermal shutdown circuits in the Product are designed to temporarily protect Product from minor overheating of brief duration. When the overheating protective function in the Product activates, immediately correct the overheating situation. Improper usage of Product, such as the application of heat to Product exceeding the absolute maximum ratings, could cause the overheating protection circuit not to operate properly and/or damage Product permanently even before the protection circuit starts to operate. 9 2012-02-28 TCV7103AF Typical Performance Characteristics IIN – Tj IIN – VIN 800 (μA) IIN 600 Operating current Operating current IIN (μA) 800 400 200 VEN = VFB = VIN Tj = 25°C 600 400 200 VEN = VIN = 5 V VFB = VIN 0 0 0 2 4 Input voltage VIN -50 6 -25 50 75 Tj 125 EN threshold voltage VIH(EN), VIL(EN) (V) (μA) VIN = 5 V 600 400 200 1.5 VIH(EN) 1 VIL(EN) 0.5 VEN = VIN = 3.3 V VFB = VIN 0 0 −50 −25 0 25 50 Junction temperature 100 75 Tj -50 125 (°C) -25 0 25 75 50 Junction temperature VIH(EN), VIL(EN) – Tj Tj 100 125 (°C) IIH(EN) – VEN 2 20 VIN = 5.6V VIN = 3.3 V Tj = 25°C 16 1.5 EN input current IIH(EN) (μA) EN threshold voltage VIH(EN), VIL(EN) (V) 100 (°C) 2 800 IIN 25 VIH(EN), VIL(EN) – Tj IIN – Tj Operating current 0 Junction temperature (V) VIH(EN) 1 VIL(EN) 0.5 12 8 4 0 0 -50 -25 0 25 50 Junction temperature 75 Tj 100 125 0 1 2 3 EN input voltage (°C) 10 4 VEN 5 6 (V) 2012-02-28 TCV7103AF IIH(EN) – Tj VUV, VUVR – Tj 20 2.6 VIN = 5 V VEN = 5 V Under voltage lockout voltageVUV,VUVR (V) EN input current IIH(EN) (μA) 16 12 8 Recovery voltage （VUVR） 2.5 Detection voltage （VUV） 2.4 4 VEN = VIN 0 -50 -25 0 25 50 Junction temperature 75 100 Tj (°C) 2.3 -50 125 -25 0 VOUT – VIN Tj 125 (°C) 1.5 VFB input voltage 1 0.5 2.3 2.2 2.4 Input voltage 2.5 VIN 2.6 VEN = VIN VOUT = 1.2 V Tj = 25°C (V) VEN = VIN VOUT = 1.2 V Tj = 25°C VFB (V) 100 VFB – VIN VOUT Output voltage 75 0.82 0 0.81 0.8 0.79 0.78 2.7 2 (V) 3 0.82 5 VIN 6 (V) ΔVOUT – VIN 30 (mV) VIN = 5 V VOUT = 1.2 V VEN = VIN VOUT = 1.2 V , IOUT = 10 mA L =1.0 μH , COUT = 10 μF ×3 Ta = 25°C 20 VFB ΔVOUT 0.81 Output voltage 0.8 0.79 0.78 -50 4 Input voltage VFB – Tj (V) 50 Junction temperature 2 VFB input voltage 25 10 0 -10 -20 -30 -25 0 25 50 Junction temperature 75 Tj 100 2 125 3 4 Input voltage (°C) 11 5 VIN 6 (V) 2012-02-28 TCV7103AF fOSC – VIN fOSC – Tj Tj = 25°C fOSC 1100 Oscillation frequency fOSC Oscillation frequency (kHz) 1200 (kHz) 1200 1000 900 800 2 3 4 Input voltage 5 VIN VIN = 5 V 1100 1000 900 800 -50 6 (V) -25 0 ISS – VIN Tj 100 125 (°C) ISS – Tj Tj = 25°C External soft-start charge current ISS (μA) External soft-start charge current ISS (μA) 75 0 -2 -4 -6 -8 -10 2 3 4 Input voltage 5 VIN VIN = 5 V -2 -4 -6 -8 -10 -12 -50 6 (V) -25 0 25 50 Junction temperature 75 Tj 100 125 (°C) ISS – Tj 0 External soft-start charge current ISS (μA) 50 Junction temperature 0 -12 25 VIN = 3.3 V -2 -4 -6 -8 -10 -12 -50 -25 0 25 50 Junction temperature 75 Tj 100 125 (°C) 12 2012-02-28 TCV7103AF ΔVOUT – IOUT ΔVOUT – IOUT VIN = 5 V , VOUT = 3.3 V L = 1.0 μH , COUT =10μF ×3 Ta = 25°C , SSM6K411TU 20 10 Output voltage 0 (mV) 30 ΔVOUT (mV) 10 Output voltage 20 ΔVOUT 30 -10 -20 -30 VIN = 5 V , VOUT = 1.2 V L = 1.0μH , COUT =10 μF ×3 Ta = 25°C , SSM6K411TU 0 -10 -20 -30 0 1 2 3 4 Output current 5 6 IOUT 7 0 1 2 (A) ΔVOUT – IOUT VIN = 3.3 V , VOUT = 1.2 V L = 1.0 μH , COUT = 10μF ×3 Ta = 25°C , SSM6K411TU 6 7 (A) 90 (%) 20 η 10 0 Efficiency (mV) ΔVOUT Output voltage 5 IOUT 100 -10 80 70 60 -20 -30 VIN = 5 V , VOUT = 3.3V L = 1.0 μH , COUT = 10μF ×3 Ta = 25°C , SSM6K411TU 50 0 1 2 3 Output current 4 5 IOUT 6 7 0 1 (A) 2 3 4 Output current 5 IOUT 6 7 (A) η – IOUT η – IOUT 100 90 90 (%) 100 (%) 80 η 80 Efficiency η 4 η – IOUT 30 Efficiency 3 Output current 70 70 60 60 VIN = 5 V , VOUT = 1.2V L = 1.0 μH , COUT = 10 μF ×3 Ta = 25°C , SSM6K411TU 50 0 1 2 3 Output current 4 IOUT 5 6 VIN = 3.3 V , VOUT = 1.2V L = 1.0 μH , COUT = 10μF ×3 Ta = 25°C , SSM6K411TU 50 0 7 (A) 1 2 3 Output current 13 4 5 IOUT 6 7 (A) 2012-02-28 TCV7103AF η – IOUT Overcurrent Protection 100 (V) 4 80 3 Output voltage Efficiency η (%) 90 VOUT 5 70 60 VIN = 5 V , VOUT = 3.3V L = 1.0 μH , COUT = 10 μF ×3 Ta = 25°C , CLS01 50 0 1 2 3 4 Output current 5 IOUT 6 1 0 4 5 6 7 Output current (A) 9 8 IOUT (A) Overcurrent Protection Overcurrent Protection 2 VIN = 3.3V , VOUT = 1.2 V L = 1μH , COUT = 10μF ×3 Ta = 25°C , SSM6K411TU (V) VIN = 5V , VOUT = 1.2V L = 1μH , COUT = 10μF ×3 Ta = 25°C , SSM6K411TU VOUT 1.5 Output voltage VOUT (V) 2 7 2 Output voltage VIN = 5V , VOUT = 3.3V L = 1μH , COUT = 10 μF ×3 Ta = 25°C , SSM6K411TU 1 0.5 1.5 1 0.5 0 0 4 5 6 Output current 7 IOUT 8 4 9 5 6 Output current (A) 14 7 IOUT 8 9 (A) 2012-02-28 TCV7103AF Startup Characteristics (Internal Soft-Start Time) VIN = 5 V VOUT = 3.3 V Ta = 25°C L = 1μH COUT = 10 μF ×3 Startup Characteristics (CSS = 0.1 μF) VIN = 5 V VOUT = 3.3 V Ta = 25°C L = 1 μH COUT = 10 μF ×3 Output voltage: VOUT (1V/div) EN voltage:VEN:L→H Output voltage: VOUT (1V/div) EN voltage:VEN:L→H 200 μs/div 2 ms/div Load Response Characteristics Load Response Characteristics VIN = 5 V , VOUT = 3.3 V , Ta = 25°C L = 1 μH , COUT = 10 μF ×3 SSM6K411TU VIN = 5 V , VOUT = 1.2 V , Ta = 25°C L = 1 μH , COUT = 10 μF ×3 SSM6K411TU Output voltage VOUT (200 mV/div) Output voltage VOUT (100 mV/div) Output current IOUT : (10mA→5A→10mA) Output current IOUT : (10mA→5A→10mA) 100 μs/div 100 μs/div 15 2012-02-28 TCV7103AF Package Dimensions HSON8-P-0505-1.27 Unit: mm Weight: 0.068 g (typ.) 16 2012-02-28 TCV7103AF RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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