TOSHIBA TCV7113F

TCV7113F
TOSHIBA CMOS Integrated Circuit
Silicon Monolithic
TCV7113F
Buck DC-DC Converter IC
The TCV7113F is a single-chip buck DC-DC converter IC. The
TCV7113F contains high-speed and low-on-resistance power
MOSFETs to achieve synchronous rectification using an external
low-side MOSFET, or rectification using an external diode.
Because of the pulse skip operation, it is a highly effective product
in a wide range of the output current.
Features
•
Enables up to 6.5A (@ VIN = 5V) / 6A (@ VIN = 3.3V) of load
current (IOUT) with a minimum of external components.
•
High efficiency: η = 95% (typ.)
•
Because of the pulse skip operation, it is a highly effective product in a wide range of the output current.
HSON8-P-0505-1.27
Weight: 0.068 g (typ.)
(@VIN = 5V, VOUT = 3.3V, IOUT = 2A) (when using the SSM6K411TU+CRS30I30A as a low-side device)
•
Operating voltage range: VIN = 2.7V to 5.6V
•
Low ON-resistance: RDS (ON) = 0.08Ω (high-side) typical (@VIN = 5V, Tj = 25°C)
•
Oscillation frequency: fOSC = 1000kHz (typ.)
•
Feedback voltage: VFB = 0.8V ± 1% (@ Tj = 0 to 85 °C)
•
Incorporates an N-channel MOSFET driver for synchronous rectification
•
Uses internal phase compensation to achieve high efficiency with a minimum of external components.
•
Allows the use of a small surface-mount ceramic capacitor as an output filter capacitor.
•
Housed in a small surface-mount package (SOP Advance) with a low thermal resistance.
•
Soft-start time adjustable by an external capacitor
•
Overcurrent protection (OCP) with latch function
Part Marking
Pin Assignment
Part Number (or abbreviation code)
LX
LSG
EN
7
6
8
VFB
5
Lot No.
TCV
7113F
The dot (•) on the top surface indicates pin 1.
1
2
3
4
VIN1
VIN2
SS
GND
The lot number consists of three digits. The first digit represents the last digit of the year of manufacture, and the
following two digits indicates the week of manufacture between 01 and either 52 or 53.
Manufacturing week code
(The first week of the year is 01; the last week is 52 or 53.)
Manufacturing year code (last digit of the year of manufacture)
This product has a MOS structure and is sensitive to electrostatic discharge. Handle with care.
The product(s) in this document (“Product”) contain functions intended to protect the Product from temporary
small overloads such as minor short-term overcurrent, or overheating. The protective functions do not necessarily
protect Product under all circumstances. When incorporating Product into your system, please design the system (1)
to avoid such overloads upon the Product, and (2) to shut down or otherwise relieve the Product of such overload
conditions immediately upon occurrence. For details, please refer to the notes appearing below in this document and
other documents referenced in this document.
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TCV7113F
Ordering Information
Part Number
Shipping
TCV7113F (TE12L, Q)
Embossed tape (3000 units per reel)
Block Diagram
VIN2
VIN1
Current detection
Oscillator
Slope
Compensation
Under
voltage
lockout
Control logic
Driver
LX
Constant-current
source (8 μA)
VFB
Short-Circuit
Protection
Error amplifier
Phase
+
compensation
SS
EN
+
-
LSG
+
Soft Start
-
Ref. Voltage
(0.8 V)
GND
Pin Description
Pin No.
Symbol
1
VIN1
2
VIN2
Description
Input pin for the output section
This pin is placed in the standby state if VEN = L. Standby current is 10μA or less.
Input pin for the control section
This pin is placed in the standby state if VEN = L. Standby current is 10μA or less.
Soft-start pin
3
SS
4
GND
5
VFB
When the SS input is left open, the soft-start time is 1ms (typ.). The soft-start time can be adjusted
with an external capacitor. The external capacitor is charged from a 8μA (typ.) constant-current
source, and the reference voltage of the error amplifier is regulated between 0 V and 0.8 V. The
external capacitor is discharged when EN = L and in case of undervoltage lockout or thermal
shutdown.
Ground pin
Feedback pin
This input is fed into an internal error amplifier with a reference voltage of 0.8V (typ.).
Enable pin
6
EN
7
LSG
8
LX
When EN ≥ 1.5V (@ VIN = 5V), the internal circuitry is allowed to operate and thus enable the
switching operation of the output section. When EN ≤ 0.5V (@ VIN = 5V), the internal circuitry is
disabled, putting the TCV7113F in Standby mode. Standby current is 10 μA or less.
This pin has an internal pull-down resistor of approx. 500kΩ.
Gate drive pin for the low-side switch
Switch pin
This pin is connected to high-side P-channel MOSFET.
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TCV7113F
Absolute Maximum Ratings (Ta = 25°C) (Note)
Characteristics
Symbol
Rating
Unit
Input pin voltage for the output section(Note 1)
VIN1
−0.3 to 7
V
Input pin voltage for the control section(Note 1)
VIN2
−0.3 to 7
V
Soft-start pin voltage(Note 1)
VSS
−0.3 to 7
V
Feedback pin voltage(Note 1)
VFB
−0.3 to 7
V
Enable pin voltage(Note 1)
VEN
−0.3 to 7
V
VEN-VIN2
VEN – VIN2 < 0.3
V
VLSG
−0.3 to 7
V
Switch pin voltage(Note 2)
VLX
−0.3 to 7
V
Switch pin current
ILX
−7.8
A
Power dissipation(Note 3)
PD
2.2
W
Tjopr
−40 to125
°C
Tj
150
°C
Tstg
−55 to150
°C
VEN – VIN2 voltage difference
LSG pin voltage(Note 1)
Operating junction temperature
Junction temperature(Note 4)
Storage temperature
Thermal Resistance Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, junction to ambient
Rth (j-a)
44.6 (Note 3)
°C/W
Thermal resistance, junction to case (Tc=25℃)
Rth (j-c)
4.17
°C/W
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc)
Note 1: Using this product continuously may cause a decrease in the reliability significantly even if the operating
conditions are within the absolute maximum ratings. Set each pin voltage less than 5.6V taking into
consideration the derating.
Note 2: The switch pin voltage (VLX) doesn’t include the peak voltage generated by TCV7113F’s switching.
A negative voltage generated in dead time is permitted among the switch pin current (ILX).
Note 3:
Glass epoxy board
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
Single-pulse measurement: pulse width t=10(s)
Note 4: The TCV7113F may enter into thermal shutdown at the rated maximum junction temperature. Thermal
design is required to ensure that the rated maximum operating junction temperature, Tjopr, will not be
exceeded.
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TCV7113F
Electrical Characteristics (Tj = 25°C, VIN1 = VIN2 = 2.7V to 5.6 V, unless otherwise specified)
Characteristics
Operating input voltage
Operating current
Symbol
EN threshold voltage
EN input current
⎯
Typ.
Max
Unit
2.7
⎯
5.6
V
VIN1 = VIN2 = VEN = VFB = 5V
⎯
580
850
μA
VOUT(OPR)
VEN = VIN1 = VIN2
0.8
⎯
⎯
V
IIN(STBY) 1
VIN1 = VIN2 = 5V, VEN = 0V
VFB = 0.8V
⎯
⎯
10
IIN(STBY) 2
VIN1 = VIN2 = 3.3 V, VEN = 0 V
VFB = 0.8V
⎯
⎯
10
ILEAK(H)
VIN1 = VIN2 = 5V, VEN = 0V
VFB = 0.8V, VLX = 0V
⎯
⎯
10
VIH(EN) 1
VIN1 = VIN2 = 5V
1.5
⎯
⎯
VIH(EN) 2
VIN1 = VIN2 = 3.3V
1.5
⎯
⎯
VIL(EN) 1
VIN1 = VIN2 = 5V
⎯
⎯
0.5
VIL(EN) 2
VIN1 = VIN2 = 3.3V
⎯
⎯
0.5
IIH(EN) 1
VIN1 = VIN2 = 5V, VEN = 5V
6
⎯
13
IIH(EN) 2
VIN1 = VIN2 = 3.3V, VEN = 3.3V
4
⎯
9
Standby current
High-side switch leakage current
Min
VIN(OPR)
IIN
Output voltage range
Test Condition
μA
VFB1
VIN1 = VIN2 = 5V, VEN = 5V
Tj = 0 to 85℃
0.792
0.8
0.808
VFB2
VIN1 = VIN2 = 3.3V, VEN = 3.3V
Tj = 0 to 85℃
0.792
0.8
0.808
VFB input voltage
μA
V
μA
V
IFB
VIN1 = VIN2 = 2.7V to 5.6V
VFB = VIN2
−1
⎯
1
RDS(ON)(H) 1
VIN1 = VIN2 = 5V, VEN = 5V
ILX = −1.5 A
⎯
0.08
⎯
RDS(ON)(H) 2
VIN1 = VIN2 = 3.3V, VEN = 3.3V
ILX = −1.5 A
⎯
0.1
⎯
On-state resistance of high-side
transistor connected to the LSG pin
RLSG(ON)(H)
VIN1 = VIN2 = 5V
⎯
0.9
⎯
On-state resistance of low-side
transistor connected to the LSG pin
RLSG(ON)(L)
VIN1 = VIN2 = 5V
⎯
0.6
⎯
VIN1 = VIN2 = VEN = 5V
800
1000
1200
kHz
VFB input current
High-side switch on-state resistance
μA
Ω
Ω
Oscillation frequency
fOSC
Internal soft-start time
tSS
VIN1 = VIN2 = 5V, IOUT = 0A,
Measured between 0% and 90% points
at VOUT.
0.5
1
1.5
ms
External soft-start charge current
ISS
VIN1 = VIN2 = 5V, VEN = 5V
-5
-8
-11
μA
Dmax
VIN1 = VIN2 = 2.7V to 5.6V
⎯
⎯
100
%
TSD
VIN1 = VIN2 = 5V
⎯
150
⎯
ΔTSD
VIN1 = VIN2 = 5V
⎯
15
⎯
High-side switch duty cycle
Detection
Thermal shutdown temperature
(TSD)
Hysteresis
Undervoltage
lockout (UVLO)
Detection voltage
VUV
VEN = VIN1 = VIN2
2.35
2.45
2.6
Recovery voltage
VUVR
VEN = VIN1 = VIN2
2.45
2.55
2.7
Hysteresis
ΔVUV
VEN = VIN1 = VIN2
⎯
0.1
⎯
ILIM1
VIN1 = VIN2 = 5V, VOUT = 2V
7.3
8.5
⎯
ILIM2
VIN1 = VIN2 = 3.3V, VOUT = 2V
6.8
8.0
⎯
ILSON
VIN1 = VIN2 = 5V, VOUT = 2V
⎯
1.1
⎯
ΔILSON
VIN1 = VIN2 = 5V, VOUT = 2V
⎯
0.35
⎯
LX current limit
Synch/Non-Synch LX peak current
Switchable current
Hysteresis
°C
V
A
A
OCP latch detection voltage
VLOC
VIN1 = VIN2 = 5V
⎯
0.3
⎯
V
OCP latch detection time
tLOC
VIN1 = VIN2 = 5V, VFB = 0.2V
⎯
2
⎯
ms
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TCV7113F
Note on Electrical Characteristics
The test condition Tj = 25°C means a state where any drifts in electrical characteristics incurred by an increase in
the chip’s junction temperature can be ignored during pulse testing.
Application Circuit Examples
Figure 1 shows a typical application circuit using a low-ESR electrolytic or ceramic capacitor for COUT.
When Using the TCV7113F with an External Low-Side MOSFET:
VIN
VOUT
L
VIN1
VIN2
EN
Lx
RFB1
VFB
EN
TCV7113F
SS
CIN
D1
LSG
CC
COUT
Q1
GND
RFB2
CSS
GND
GND
When Using the TCV7113F with an External Schottky Barrier Diode:
VOUT
L
VIN
VIN2
EN
VIN1
Lx
RFB1
VFB
EN
CIN
CC
SS
TCV7113F
LSG
RS
COUT
D2
GND
CS
CSS
RFB2
GND
GND
Figure 1 TCV7113F Typical Application Circuit Examples
Component values (reference value@ VIN = 5V, VOUT = 3.3V, Ta = 25°C)
Q1: Low-side FET (N-channel MOSFET: SSM6K411TU manufactured by Toshiba Corporation)
D1: Low-side Schottky barrier diode (Schottky barrier diode: CRS30I30A manufactured by Toshiba Corporation)
D2: Low-side Schottky barrier diode (Schottky barrier diode: CLS01 manufactured by Toshiba Corporation)
CIN: Input filter capacitor = 22μF (ceramic capacitor: GRM21BB30J226M manufactured by Murata Manufacturing Co.,
Ltd.)
COUT: Output filter capacitor = 22μF (ceramic capacitor: GRM21BB30J226M manufactured by Murata Manufacturing Co.,
Ltd.)
CC: Decoupling capacitor = 1μF (ceramic capacitor: GRM188B11A105K manufactured by Murata Manufacturing Co., Ltd.)
RFB1: Output voltage setting resistor = 7.5kΩ
RFB2: Output voltage setting resistor = 2.4kΩ
RS: Snubber resistor = 4.7Ω
CS: Snubber capacitor = 220pF(ceramic capacitor: GRM1552C1H221J manufactured by Murata Manufacturing Co., Ltd.)
L: Inductor = 1μH (VLM10555T-1R2M100-3 or CLF7045T-1R0N manufactured by TDK-EPC Corporation,
DS85LCB B1135AS-1R0N or DG8040C 1267AY-1R0N manufactured by TOKO, INC)
CSS is a capacitor for adjusting the soft-start time.
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TCV7113F
Examples of Component Values (For Reference Only)
Output Voltage Setting
VOUT
Inductance
L
Input Capacitance
CIN
Output Capacitance
COUT
Feedback Resistor
RFB1
Feedback Resistor
RFB2
1.0 V
1 μH
44 μF
66 μF
7.5 kΩ
30 kΩ
1.2 V
1 μH
44 μF
66 μF
7.5 kΩ
15 kΩ
1.51 V
1 μH
44 μF
66 μF
16 kΩ
18 kΩ
1.8 V
1 μH
44 μF
66 μF
15 kΩ
12 kΩ
2.5 V
1 μH
44 μF
44 μF
5.1 kΩ
2.4 kΩ
3.3 V
1 μH
44 μF
44 μF
7.5 kΩ
2.4 kΩ
Component values need to be adjusted, depending on the TCV7113F’s I/O conditions and the board layout.
Application Notes
Inductor Selection
The inductance required for inductor L can be calculated as follows:
VIN: Input voltage (V)
VIN − VOUT VOUT
VOUT: Output voltage (V)
···················(1)
L=
⋅
fOSC ⋅ ΔIL
VIN
fOSC: Oscillation frequency = 1000kHz (typ.)
ΔIL: Inductor ripple current (A)
*:
Generally, ΔIL should be set to approximately 20% of the maximum output current. Since the maximum
output current of the TCV7113F is 6.5A, ΔIL should be 1.3A or so. The inductor should have a current
rating greater than the peak output current of 7.2A. If the inductor current rating is exceeded, the inductor
becomes saturated, leading to an unstable DC-DC converter operation.
L=
=
VIN − VOUT VOUT
⋅
fOSC ⋅ ΔIL
VIN
5 V − 3.3 V
3.3 V
⋅
1000kHz ⋅ 1.3A 5 V
ΔIL
When VIN = 5V and VOUT = 3.3V, the required inductance can be calculated as follows. Be sure to select an
appropriate inductor, taking the input voltage range into account.
IL
0
T=
= 0.86 μH
V
TON = Τ ⋅ OUT
VIN
1
fosc
Figure 2 Inductor Current Waveform
Setting the Output Voltage
A resistive voltage divider is connected as shown in Figure 3 to set the output voltage; it is given by Equation 2
based on the reference voltage of the error amplifier (0.8V typ.), which is connected to the Feedback pin, VFB.
RFB1 should be up to 30kΩ or so, because an extremely large-value RFB1 incurs a delay due to parasitic
capacitance at the VFB pin. It is recommended that resistors with a precision of ±1% or higher be used for RFB1
and RFB2.
LX
VFB
RFB2
⎛
⎞
R
= 0.8 V × ⎜⎜1 + FB1 ⎟⎟ ···············(2)
R FB2 ⎠
⎝
VOUT
RFB1
⎛
⎞
R
VOUT = VFB ⋅ ⎜⎜1 + FB1 ⎟⎟
R FB2 ⎠
⎝
Figure 3 Output Voltage Setting Resistors
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TCV7113F
Output Filter Capacitor Selection
Use a low-ESR electrolytic or ceramic capacitor as the output filter capacitor. Since a capacitor is generally
sensitive to temperature, choose one with excellent temperature characteristics. When the output voltage
exceeds 2V, the capacitance should be 40μF or greater for applications. Meanwhile 60μF or greater capacitance is
desirable when the output voltage is less than 2V. The capacitance should be set to an optimal value that meets
the system’s ripple voltage requirement and transient load response characteristics. The phase margin tends to
decrease as the output voltage is getting low. Enlarge a capacitance for output flatness when phase margin is
insufficient, or the transient load response characteristics cannot be satisfied. Since the ceramic capacitor has a
very low ESR value, it helps reduce the output ripple voltage; however, because the ceramic capacitor provides
less phase margin, it should be thoroughly evaluated.
Rectifier Selection
A low-side switch or Schottky barrier diode should be externally connected to the TCV7113F.
・When using the TCV7113F with an external Low-side MOSFET(Synch/Non-Synch).
The gating signal on low side MOSFET is turned off to improve the efficiency at a light load.
When N-channel MOSFET and SBD are connected with the low side switch in parallel, the efficiency at a light
load is improved. It is recommended that an N-channel MOSFET SSM6K411TU or equivalent be on as a low-side
switch. SSM6K411TU connects in parallel and uses SBD. It is recommended that an SBD CRS30I30A or
equivalent be on as a SBD.
An N-channel MOSFET and SBD of a different type can also be used in parallel. However, if the switching
speed of the external MOSFET is low, a shoot-through current may flow due to the simultaneous conduction of
high-side and low-side switches, leading to device failure. Thus, observe the waveform at the LX pin while
operating the TCV7113F with a current close to the rated value to make sure that there is a dead time (the
period between the time when the low-side switch is turned off and the high-side switch is turned on) of more
than 10ns. Thorough evaluation is required to ensure that the TCV7113F provides an appropriate dead time
even when in the end-product environment.
Please use the product of ratings of 1A or more in average order current for SBD used in parallel. It tends for
the light load efficiency to be improved when the product with small forward voltage is used. However, efficiency
might decrease because of the rise of the ambient temperature and an increase in the backward current by
self-generation of heat. Please execute an enough evaluation.
・When using the TCV7113F with an external Schottky barrier diode (Non-Synch).
When you use only Schottky barrier diode, the CLS01 is recommended to be used. Using a Schottky barrier
diode tends to lead to a large voltage overshoot on the LX pin. Thus, a series RC filter consisting of a resistor of
RS = 4.7Ω and a capacitor of CS = 220pF should be connected in parallel with the Schottky barrier diode. Power
loss of a Schottky barrier diode tends to increase due to an increased reverse current caused by the rise in
ambient temperature and self-heating due to a supplied current. The rated current should therefore be derated
to allow for such conditions in selecting an appropriate diode.
Soft-Start Feature
The TCV7113F has a soft-start feature.
If the SS pin is left open, the soft-start time, tSS, for VOUT defaults to 1ms (typ.) internally.
The soft-start time can be extended by adding an external capacitor (CSS) between the SS and GND pins. The
soft-start time can be calculated as follows:
t SS2 = 0.1 ⋅ CSS ·········································(3)
tSS2:
CSS:
Soft-start time (in seconds) when an external capacitor is
connected between SS and GND.
Capacitor value (μF)
The soft-start feature is activated when the TCV7113F exits the undervoltage lockout (UVLO) state after
power-up and when the voltage at the EN pin has changed from logic low to logic high.
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TCV7113F
Overcurrent Protection（OCP）
TCV7113F has an overcurrent protection with latch function. When a peak current of LX pin exceeds a ILIM =
8.5A (typ.)@VIN = 5V, ON time of high-side switch (internal) is limited. When OCP is in operation, and VFB input
voltage drops below latch detection voltage VLOC = 0.3V (typ.) for more than latch detection time tLOC = 2ms
(typ.), TCV7113F will halt the output voltage and this state is latched. When the EN pin level changes from high
to low, or the input voltage becomes under VUV = 2.45V (typ.), releases the latch. While soft-start feature is in
operation, OCP does not operate. In the condition with low input voltage, the current limitation value tends to
decrease. In the condition of less than VIN = 3.8V, please use it below output current IOUT = 6.0A (max).
ILIM =8.5A (typ.)
ILX (peak)
VFB
VFB =0.8V (typ.)
VLOC =0.3V (typ.)
Overcurrent period
tLOC =2ms(typ.)
Output voltage stop
Figure 4 Overcurrent Protection Operation
Undervoltage Lockout (UVLO)
The TCV7113F has undervoltage lockout (UVLO) protection circuitry. The TCV7113F does not provide output
voltage (VOUT) until the input voltage (VIN2) has reached VUVR = 2.55V (typ.). UVLO has hysteresis of 0.1V
(typ.). After the switch turns on, if VIN2 drops below VUV = 2.45V (typ.), UVLO shuts off the switch at VOUT.
Undervoltage lockout
recovery voltage VUVR
VIN2
Undervoltage lockout
detection voltage VUV
Hysteresis: ΔVUV
GND
Switching operation starts
VOUT
GND
Switching operation
stops
Soft start
Figure 5 Undervoltage Lockout Operation
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TCV7113F
Thermal Shutdown (TSD)
The TCV7113F provides thermal shutdown. When the junction temperature continues to rise and reaches TSD
= 150°C (typ.), the TCV7113F goes into thermal shutdown and shuts off the power supply. TSD has a hysteresis
of about 15°C (typ.). The device is enabled again when the junction temperature has dropped by approximately
15°C from the TSD trip point. The device resumes the power supply when the soft-start circuit is activated upon
recovery from TSD state.
Thermal shutdown is intended to protect the device against abnormal system conditions. It should be ensured
that the TSD circuit will not be activated during normal operation of the system.
TSD detection
temperature: TSD
Recovery from TSD
Hysteresis: ΔTSD
Tj
0
Switching operation starts
VOUT
GND
Switching operation stops
Soft start
Figure 6 Thermal Shutdown Operation
Usage Precautions
•
The input voltage, output voltage, output current and temperature conditions should be considered when
selecting capacitors, inductors and resistors. These components should be evaluated on an actual system
prototype for best selection.
•
Parts of this product in the surrounding are examples of the representative, and the supply might become
impossible. Please confirm latest information when using it.
•
External components such as capacitors, inductors and resistors should be placed as close to the TCV7113F as
possible.
•
The TCV7113F has an ESD diode between the EN and VIN2 pins. The voltage between these pins should satisfy
VEN − VIN2 < 0.3V.
•
Add a decoupling capacitor (CC) of 0.1μF to 1μF between the GND and VIN2 pins. To achieve stable operation,
also insert a resistor of about 100Ω between the VIN2 and VIN1 pins to reduce the ripple voltage at the VIN2 pin.
•
The minimum programmable output voltage is 0.8V (typ.). If the difference between the input and output
voltages is small, the output voltage might not be regulated accurately and fluctuate significantly.
•
GND pin is connected with the back of IC chip and serves as the heat radiation pin. Secure the area of a GND
pattern as large as possible for greater of heat radiation.
•
The overcurrent protection circuits in the Product are designed to temporarily protect Product from minor
overcurrent of brief duration. When the overcurrent protective function in the Product activates, immediately
cease application of overcurrent to Product. Improper usage of Product, such as application of current to Product
exceeding the absolute maximum ratings, could cause the overcurrent protection circuit not to operate properly
and/or damage Product permanently even before the protection circuit starts to operate.
•
The thermal shutdown circuits in the Product are designed to temporarily protect Product from minor
overheating of brief duration. When the overheating protective function in the Product activates, immediately
correct the overheating situation. Improper usage of Product, such as the application of heat to Product
exceeding the absolute maximum ratings, could cause the overheating protection circuit not to operate properly
and/or damage Product permanently even before the protection circuit starts to operate.
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TCV7113F
Typical Performance Characteristics
IIN – Tj
IIN – VIN
800
(μA)
IIN
600
Operating current
Operating current
IIN
(μA)
800
400
200
VEN = VFB = VIN
Tj = 25°C
600
400
200
VEN = VIN = 5 V
VFB = VIN
0
0
0
2
4
Input voltage
VIN
-50
6
-25
50
75
Tj
125
EN threshold voltage
VIH(EN), VIL(EN) (V)
VIN = 5V
IIN
600
400
200
1.5
VIH(EN)
1
VIL(EN)
0.5
VEN = VIN = 3.3V
VFB = VIN
0
0
−50
−25
0
25
50
Junction temperature
100
75
Tj
-50
125
(°C)
-25
0
25
75
50
Junction temperature
VIH(EN), VIL(EN) – Tj
2
Tj
100
125
(°C)
IIH(EN) – VEN
20
VIN = 5.6V
VIN = 3.3V
Tj = 25°C
16
1.5
EN input current
IIH(EN) (μA)
EN threshold voltage
VIH(EN), VIL(EN) (V)
100
(°C)
2
800
(μA)
25
VIH(EN), VIL(EN) – Tj
IIN – Tj
Operating current
0
Junction temperature
(V)
VIH(EN)
1
VIL(EN)
0.5
12
8
4
0
0
-50
-25
0
25
50
Junction temperature
75
Tj
100
125
0
1
2
3
EN input voltage
(°C)
10
4
VEN
5
6
(V)
2012-02-28
TCV7113F
IIH(EN) – Tj
VUV, VUVR – Tj
20
2.6
VIN = 5V
VEN = 5V
Under voltage lockout
voltageVUV,VUVR (V)
EN input current
IIH(EN) (μA)
16
12
8
Recovery voltage
（VUVR）
2.5
Detection voltage
（VUV）
2.4
4
VEN = VIN
0
-50
-25
0
25
50
Junction temperature
75
100
Tj
(°C)
2.3
-50
125
-25
0
VOUT – VIN
Tj
125
(°C)
1.5
VFB input voltage
1
0.5
2.3
2.2
2.4
Input voltage
2.5
VIN
2.6
VEN = VIN
VOUT = 1.2V
Tj = 25°C
(V)
VEN = VIN
VOUT = 1.2V
Tj = 25°C
VFB
(V)
100
VFB – VIN
VOUT
Output voltage
75
0.82
0
0.81
0.8
0.79
0.78
2.7
2
(V)
3
5
VIN
6
(V)
ΔVOUT – VIN
30
VIN = 5V
VOUT = 1.2V
VEN = VIN
(mV)
VOUT = 1.2V , IOUT = 10mA
L = 1.0μH , COUT = 22μF ×3
20
VFB
ΔVOUT
0.81
Output voltage
0.8
0.79
0.78
-50
4
Input voltage
VFB – Tj
0.82
(V)
50
Junction temperature
2
VFB input voltage
25
Ta = 25°C
10
0
-10
-20
-30
-25
0
25
50
Junction temperature
75
Tj
100
2
125
3
4
Input voltage
(°C)
11
5
VIN
6
(V)
2012-02-28
TCV7113F
fOSC – VIN
fOSC – Tj
Tj = 25°C
fOSC
1100
Oscillation frequency
fOSC
Oscillation frequency
(kHz)
1200
(kHz)
1200
1000
900
800
2
3
4
Input voltage
5
VIN
VIN = 5V
1100
1000
900
800
-50
6
(V)
-25
0
ISS – VIN
Tj
100
125
(°C)
ISS – Tj
Tj = 25°C
External soft-start charge current
ISS (μA)
External soft-start charge current
ISS (μA)
75
0
-2
-4
-6
-8
-10
2
3
4
Input voltage
5
VIN
VIN = 5V
-2
-4
-6
-8
-10
-12
-50
6
(V)
-25
0
25
50
Junction temperature
75
Tj
100
125
(°C)
ISS – Tj
0
External soft-start charge current
ISS (μA)
50
Junction temperature
0
-12
25
VIN = 3.3V
-2
-4
-6
-8
-10
-12
-50
-25
0
25
50
Junction temperature
75
Tj
100
125
(°C)
12
2012-02-28
TCV7113F
ΔVOUT – IOUT
ΔVOUT – IOUT
30
30
VIN = 5V , VOUT = 1.2V
(mV)
20
LS : SSM6K411TU, CRS30I30A
ΔVOUT
Ta = 25°C
10
L = 1.0μH , COUT = 22μF ×3
20
LS : SSM6K411TU, CRS30I30A
Ta = 25°C
10
0
0
Output voltage
Output voltage
ΔVOUT
(mV)
VIN = 5V , VOUT = 3.3V
L = 1.0μH , COUT = 22μF ×2
-10
-20
-30
-10
-20
-30
0
1
2
3
4
Output current
6
5
IOUT
0
7
1
2
(A)
L = 1.0μH , COUT = 22μF ×3
20
LS : SSM6K411TU, CRS30I30A
80
10
0
-10
η
(%)
Ta = 25°C
60
Efficiency
(mV)
ΔVOUT
Output voltage
7
η – IOUT
VIN = 3.3V , VOUT = 1.2V
40
VIN = 5V , VOUT = 3.3V
20
-20
L = 1.0μH , COUT = 22μF ×2
LS : SSM6K411TU, CRS30I30A
0
1
2
3
4
Output current
IOUT
5
0
0.001
6
(A)
Ta = 25°C
0.01
0.1
Output current
10
1
IOUT
(A)
η – IOUT
η – IOUT
100
80
80
(%)
100
(%)
η
60
Efficiency
η
IOUT
6
5
100
-30
Efficiency
4
Output current
(A)
ΔVOUT – IOUT
30
3
40
VIN = 5V , VOUT = 1.2V
20
60
40
VIN = 3.3V , VOUT = 1.2V
20
L = 1.0μH , COUT = 22μF ×3
L = 1.0μH , COUT = 22μF ×3
LS : SSM6K411TU, CRS30I30A
LS : SSM6K411TU, CRS30I30A
Ta = 25°C
0
0.001
0.01
0.1
Output current
1
IOUT
Ta = 25°C
0
10
0.001
0.01
0.1
Output current
(A)
13
1
IOUT
10
(A)
2012-02-28
TCV7113F
η – IOUT
Overcurrent Protection
5
(V)
4
60
3
Output voltage
Efficiency
η
(%)
80
VOUT
100
40
VIN = 5V , VOUT = 3.3V
20
L = 1.0μH , COUT = 22μF ×2
VIN = 5V , VOUT = 3.3V
L = 1μH , COUT = 22μF ×2
LS : SSM6K411TU, CRS30I30A
Ta = 25°C
2
1
LS : CLS01
Ta = 25°C
0
0.001
0.01
0.1
Output current
0
10
1
IOUT
4
5
(A)
7
Output current
Overcurrent Protection
IOUT
9
8
(A)
Overcurrent Protection
2
2
VIN = 3.3V , VOUT = 1.2V
L = 1μH , COUT = 22μF ×3
LS : SSM6K411TU, CRS30I30A
Ta = 25°C
1.5
VOUT
VOUT
(V)
(V)
VIN = 5V , VOUT = 1.2V
L = 1μH , COUT = 22μF ×3
LS : SSM6K411TU, CRS30I30A
Ta = 25°C
1.5
1
Output voltage
Output voltage
6
0.5
0
1
0.5
0
4
5
6
Output current
7
IOUT
8
4
9
5
6
Output current
(A)
14
7
IOUT
8
9
(A)
2012-02-28
TCV7113F
Startup Characteristics
(Internal Soft-Start Time)
VIN = 5V
VOUT = 3.3V
Ta = 25°C
L = 1μH
COUT = 22μF×2
Startup Characteristics
(CSS = 0.1 μF)
VIN = 5V
VOUT = 3.3V
Ta = 25°C
L = 1μH
COUT = 22μF×2
Output voltage:
VOUT (1V/div)
EN voltage:VEN:L→H
Output voltage:
VOUT (1V/div)
EN voltage:VEN:L→H
200 μs/div
2 ms/div
Load Response Characteristics
Load Response Characteristics
VIN = 5V , VOUT = 3.3V , Ta = 25°C
L = 1μH , COUT = 22μF ×2
LS : SSM6K411TU, CRS30I30A
VIN = 5V , VOUT = 1.2V , Ta = 25°C
L = 1μH , COUT = 22μF ×3
LS : SSM6K411TU, CRS30I30A
Output voltage VOUT (200 mV/div)
Output voltage VOUT (100 mV/div)
Output current IOUT :
(10mA→5A→10mA)
Output current IOUT :
(10mA→5A→10mA)
100 μs/div
100 μs/div
15
2012-02-28
TCV7113F
Package Dimensions
HSON8-P-0505-1.27
Unit: mm
Weight: 0.068 g (typ.)
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2012-02-28
TCV7113F
RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively “Product”) without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product,
or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all
relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for
Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the instructions for
the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product
design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or
applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams,
programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for
such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS.
• Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.
Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or
reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious public
impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the
aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling
equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric
power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this
document.
• Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.
• Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any
applicable laws or regulations.
• The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any
infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
• ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.
• Do not use or otherwise make available Product or related software or technology for any military purposes, including without limitation,
for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile technology
products (mass destruction weapons). Product and related software and technology may be controlled under the Japanese Foreign
Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software
or technology are strictly prohibited except in compliance with all applicable export laws and regulations.
• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.
17
2012-02-28