TDA2009A 10 +10W STEREO AMPLIFIER . .. .. HIGH OUTPUT POWER (10 + 10W Min. @ D = 1%) HIGH CURRENT CAPABILITY (UP TO 3.5A) AC SHORT CIRCUIT PROTECTION THERMAL OVERLOAD PROTECTION SPACE AND COST SAVING : VERY LOW NUMBER OF EXTERNAL COMPONENTS AND SIMPLE MOUNTING THANKS TO THE MULTIWATT PACKAGE. MULTIW ATT11 ORDERING NUMBER : TDA2009A DESCRIPTION The TDA2009A is class AB dual Hi-Fi Audio power amplifier assembled in Multiwatt package, specially designed for high quality stereo application as Hi-Fi and music centers. PIN CONNECTION May 1995 1/12 TDA2009A SCHEMATIC DIAGRAM 2/12 TDA2009A ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit Vs Supply Voltage 28 V Io Output Peak Current (repetitive f ≥ 20 Hz) 3.5 A Io Output Peak Current (non repetitive, t = 100 µs) 4.5 A Ptot Power Dissipation at Tcase = 90 °C 20 W Tstg, Tj Storage and Junction Temperature – 40, + 150 °C THERMAL DATA Symbol R th j-case Parameter Thermal Resistance Junction-case Value Unit 3 °C/W Max. ELECTRICAL CHARACTERISTICS (refer to the stereo application circuit, Tamb = 25oC, VS = 24V, GV = 36dB, unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Vs Supply Voltage Vo Quiescent Output Voltage Vs = 24V 11.5 Id Total Quiescent Drain Current Vs = 24V 60 Po Output Power (each channel) d = 1%, Vs = 24V, f = 1kHz R L = 4Ω R L = 8Ω f = 40Hz to 12.5kHz R L = 4Ω R L = 8Ω Vs = 18V, f = 1kHz R L = 4Ω R L = 8Ω d Distortion (each channel) CT Cross Talk (3) 8 f = 1kHz, Vs = 24V Po = 0.1 to 7W Po = 0.1 to 3.5W Vs = 18V Po = 0.1 to 5W Po = 0.1 to 2.5W 10 5 W W % % R L = ∞, Rg = 10kΩ f = 1kHz f = 10kHz R L = 4Ω dB 60 50 300 fH High Frequency Roll off (– 3dB) R L = 4Ω Gv Voltage Gain (closed loop) f = 1kHz ∆Gv Closed Loop Gain Matching 1. 2. W W 0.2 0.1 Low Frequency Roll off (– 3dB) Notes : 12.5 7 mA RL = 4 Ω RL = 8Ω fL Thermal Shut-down Junction Temperature 120 % % f = 1kHz, Non Inverting Input TJ V 0.2 0.1 Input Resistance Supply Voltage Rejection (each channel) V RL = 4Ω RL = 8Ω Input Saturation Voltage (rms) SVR 28 W W Vi Total Input Noise Voltage Unit 7 4 Ri eN Max. 70 mV 200 kΩ 20 Hz 80 35.5 36 kHz 36.5 0.5 dB dB µV µV R g = 10kΩ (1) R g = 10kΩ (2) 1.5 2.5 R g = 10kΩ fripple = 100Hz, Vripple = 0.5V 55 dB 145 °C 8 Curve A 22Hz to 22kHz 3/12 TDA2009A Figure 1 : Test and Application Circuit (GV = 36dB) Figure 2 : P.C. board and component layout of the fig. 1 4/12 TDA2009A Figure 3 : Output Power versus Supply Voltage Figure 4 : Output Power versus Supply Voltage Figure 5 : Distortion versus Output Power Figure 6 : Distortion versus Frequency Figure 7 : Distortion versus Frequency Figure 8 : Quiescent Current versus Supply Voltage 5/12 TDA2009A Figure 9 : Supply Voltage Rejection versus Frequency Figure 11 : Total Power Dissipation and Efficiency versus Output Power APPLICATION INFORMATION Figure 12 : Example of Muting Circuit 6/12 Figure 10 : Total Power Dissipation and Efficiency versus Output Power TDA2009A Figure 13 : 10W +10W Stereo Amplifier with Tone Balance and Loudness Control Figure 14 : Tone Control Response (circuit of Figure 13) 7/12 TDA2009A Figure 15 : High Quality 20 + 20W Two Way Amplifier for Stereo Music Center (one channel only) Figure 16 : 18W Bridge Amplifier (d = 1%, GV = 40dB) 8/12 TDA2009A Figure 17 : P.C. BOARD and Components Layout of the Circuit of Figure 16 (1:1 scale) APPLICATION SUGGESTION The recommended values of the components are those shown on application circuit of fig. 1. Different values can be used ; the following table can help the designer. R1, R3 R2, R4 R5, R6 Recommended Value 1.2kΩ 18kΩ 1Ω C1, C2 2.2µF Input DC Decoupling C3 22µF Ripple Rejection C6, C7 220µF C8, C9 C10, C11 0.1µF 1000µF to 2200µF Feedback Input DC Decoupling Frenquency Stability Output DC Decoupling Component Purpose Close Loop Gain Setting (1) Frequency Stability Larger than Increase of Gain Decrease of Gain Danger of Oscillation at High Frequency with Inductive Load High Turn-on Delay Better SVR. Increase of the Switch-on Time Smaller than Decrease of Gain Increase of Gain High Turn-on Pop. Higher Low Frequency Cut-off. Increase of Noise Degradation of SVR Danger of Oscillation Higher Low-frequency Cut-off (1) The closed loop gain must be higher than 26dB. BUILD-IN PROTECTION SYSTEMS THERMAL SHUT-DOWN The presence of a thermal limiting circuit offers the following advantages: 1) an averload on the output (even if it is pe rman e nt ), o r an e xce ssive a mb ien t temperature can be easily withstood. 2) the heatsink can have a smaller factor of safety compared with that of a conventional circuit. There is no device damage in the case of excessive junction temperature : all that happens is that Po (and therefore Ptot) and Io are reduced. The maximum allowable power dissipation depends upon the size of the external heatsink (i.e. its thermal resistance); Figure 18 shows this dissipable power as a function of ambient temperature for different thermal resistance. Short circuit (AC Conditions). The TDA2009A can withstand an accidentalshort circuit from the output and ground made by a wrong connection during normal play operation. 9/12 TDA2009A MOUNTING INSTRUCTIONS The power dissipated in the circuit must be removed by adding an external heatsink. Thanks to the MULTIWATT package attaching Figure 18 : Maximum Allowable Power Dissipation versus Ambient Temperature Figure 20 : Output Power and Drain Current versus Case Temperature 10/12 the heatsink is very simple, a screw or a compression spring (clip) being sufficient. Between the heatsinkand the package it is better to insert a layer of silicon grease, to optimize the thermal contact ; no electrical isolation is needed between the two Figure 19 : Output Power versus Case Temperature TDA2009A MULTIWATT11 PACKAGE MECHANICAL DATA DIM. A B C D E F G G1 H1 H2 L L1 L2 L3 L4 L7 M M1 S S1 Dia1 MIN. mm TYP. MAX. 5 2.65 1.6 MIN. 0.55 0.95 1.95 17.25 0.019 0.035 0.057 0.659 0.772 1 0.49 0.88 1.45 16.75 19.6 21.9 21.7 17.4 17.25 10.3 2.65 4.25 4.73 1.9 1.9 3.65 1.7 17 22.2 22.1 17.5 10.7 4.55 5.08 inch TYP. MAX. 0.197 0.104 0.063 0.039 20.2 22.5 22.5 18.1 17.75 10.9 2.9 4.85 5.43 2.6 2.6 3.85 0.862 0.854 0.685 0.679 0.406 0.104 0.167 0.186 0.075 0.075 0.144 0.067 0.669 0.874 0.87 0.689 0.421 0.179 0.200 0.022 0.037 0.077 0.679 0.795 0.886 0.886 0.713 0.699 0.429 0.114 0.191 0.214 0.102 0.102 0.152 11/12 TDA2009A Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components inlife support devices or systems without express written approval of SGS-THOMSON Microelectronics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore Spain - Sweden - Switzerland - Taiwan - Thaliand - United Kingdom - U.S.A. 12/12