TEMD5020X01 Vishay Semiconductors Silicon PIN Photodiode, RoHS Compliant, Released for Lead (Pb)-free Reflow Soldering, AEC-Q101 Released FEATURES • Package type: surface mount • Package form: top view • Dimensions (L x W x H in mm): 5 x 4.24 x 1.12 • Radiant sensitive area (in mm2): 4.4 • Product designed and qualified acc. AEC-Q101 for the automotive market • High photo sensitivity • High radiant sensitivity 20535 • Suitable for visible and near infrared radiation • Fast response times • Angle of half sensitivity: ϕ = ± 65° DESCRIPTION • Floor life: 72 h, MSL 4, acc. J-STD-020 TEMD5020X01 is a high speed and high sensitive PIN photodiode. It is a miniature surface mount device (SMD) including the chip with a 4.4 mm2 sensitive area detecting visible and near infrared radiation. • Lead (Pb)-free reflow soldering • Lead (Pb)-free component in accordance RoHS 2002/95/EC and WEEE 2002/96/EC with APPLICATIONS • High speed photo detectors PRODUCT SUMMARY COMPONENT Ira (µA) ϕ (deg) λ0.1 (nm) TEMD5020X01 35 ± 65 430 to 1100 Note Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM TEMD5020X01 Tape and reel MOQ: 1500 pcs, 1500 pcs/reel Top view Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION Reverse voltage Tamb ≤ 25 °C Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient SYMBOL VALUE VR 60 UNIT V PV 215 mW Tj 100 °C Tamb - 40 to + 100 °C Tstg - 40 to + 100 °C Acc. reflow solder profile fig. 8 Tsd 260 °C Soldered on PCB with pad dimensions: 4 mm x 4 mm RthJA 350 K/W Note Tamb = 25 °C, unless otherwise specified Document Number: 84685 Rev. 1.5, 08-Sep-08 For technical questions, contact: [email protected] www.vishay.com 449 TEMD5020X01 Vishay SemiconductorsSilicon PIN Photodiode, RoHS Compliant, Released for Lead (Pb)-free Reflow Soldering, AEC-Q101 Released BASIC CHARACTERISTICS PARAMETER TEST CONDITION Forward voltage MIN. TYP. MAX. UNIT 1 1.3 V 30 nA 40 pF IF = 50 mA VF IR = 100 µA, E = 0 V(BR) VR = 10 V, E = 0 Iro 2 VR = 0 V, f = 1 MHz, E = 0 CD 48 VR = 3 V, f = 1 MHz, E = 0 CD 17 Breakdown voltage Reverse dark current Diode capacitance SYMBOL 60 V pF Open circuit voltage Ee = 1 mW/cm2, λ = 950 nm Vo 350 mV Temperature coefficient of Vo Ee = 1 mW/cm2, λ = 950 nm TKVo - 2.6 mV/K Short circuit current Ee = 1 mW/cm2, λ = 950 nm Ik 32 µA TKIk 0.1 %/K 35 µA mW/cm2, λ = 950 nm Temperature coefficient of Ik Ee = 1 Reverse light current Ee = 1 mW/cm2, λ = 950 nm, VR = 5 V 25 Ira Angle of half sensitivity ϕ ± 65 deg Wavelength of peak sensitivity λp 900 nm λ 0.1 430 to 1100 nm Range of spectral bandwidth Noise equivalent power VR = 10 V, λ = 950 nm NEP 4 x 10-14 W/√Hz Rise time VR = 10 V, RL = 1 kΩ, λ = 820 nm tr 100 ns Fall time VR = 10 V, RL = 1 kΩ, λ = 820 nm tf 100 ns Note Tamb = 25 °C, unless otherwise specified BASIC CHARACTERISTICS Tamb = 25 °C, unless otherwise specified I ra rel - Relative Reverse Light Current Iro - Reverse Dark Current (nA) 1000 100 10 VR = 10 V 1 20 94 8403 40 60 80 Tamb - Ambient Temperature (°C) VR = 5 V λ = 950 nm 1.2 1.0 0.8 0.6 0 100 Fig. 1 - Reverse Dark Current vs. Ambient Temperature www.vishay.com 450 1.4 94 8409 20 40 60 80 100 Tamb - Ambient Temperature (°C) Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature For technical questions, contact: [email protected] Document Number: 84685 Rev. 1.5, 08-Sep-08 TEMD5020X01 Silicon PIN Photodiode, RoHS Compliant, Released for Vishay Semiconductors Lead (Pb)-free Reflow Soldering, AEC-Q101 Released S ( λ)rel - Relative Spectral Sensitivity 100 10 1 VR = 5 V λ= 950 nm 0.1 0.01 94 8421 0.8 0.6 0.4 0.2 0 10 0.1 1 Ee - Irradiance (mW/cm 2) 350 550 750 Fig. 6 - Relative Spectral Sensitivity vs. Wavelength 0° 100 10° 20° 30° Srel - Relative Radiant Sensitivity λ = 950 nm 1 mW/cm2 0.5 mW/cm2 10 1150 950 λ - Wavelength (nm) 94 8420 Fig. 3 - Reverse Light Current vs. Irradiance Ira - Reverse Light Current (µA) 1.0 0.2 mW/cm2 2 0.1 mW/cm 2 0.05 mW/cm 40° 1.0 0.9 50° 0.8 60° 70° 0.7 ϕ - Angular Displacement Ira - Reverse Light Current (µA) 1000 80° 1 0.1 1 10 100 VR - Reverse Voltage (V) 94 8422 0.6 0.4 0.2 0 94 8406 Fig. 4 - Reverse Light Current vs. Reverse Voltage Fig. 7 - Relative Radiant Sensitivity vs. Angular Displacement CD - Diode Capacitance (pF) 80 E=0 f = 1 MHz 60 40 20 0 0.1 94 8423 1 10 100 VR - Reverse Voltage (V) Fig. 5 - Diode Capacitance vs. Reverse Voltage Document Number: 84685 Rev. 1.5, 08-Sep-08 For technical questions, contact: [email protected] www.vishay.com 451 TEMD5020X01 Vishay SemiconductorsSilicon PIN Photodiode, RoHS Compliant, Released for Lead (Pb)-free Reflow Soldering, AEC-Q101 Released PACKAGE DIMENSIONS in millimeters Drawing-No.: 6.541-5059.01-4 Issue: 4; 26.04.07 Not indicated tolerances ± 0.1 19280 www.vishay.com 452 For technical questions, contact: [email protected] Document Number: 84685 Rev. 1.5, 08-Sep-08 TEMD5020X01 Silicon PIN Photodiode, RoHS Compliant, Released for Vishay Semiconductors Lead (Pb)-free Reflow Soldering, AEC-Q101 Released TAPING DIMENSIONS in millimeters 20537 REEL DIMENSIONS in millimeters 20874 Document Number: 84685 Rev. 1.5, 08-Sep-08 For technical questions, contact: [email protected] www.vishay.com 453 TEMD5020X01 Vishay SemiconductorsSilicon PIN Photodiode, RoHS Compliant, Released for Lead (Pb)-free Reflow Soldering, AEC-Q101 Released SOLDER PROFILE DRYPACK 300 255 °C 240 °C 217 °C 250 Temperature (°C) max. 260 °C 245 °C 200 FLOOR LIFE max. 30 s 150 max. 100 s max. 120 s 100 max. ramp up 3 °C/s max. ramp down 6 °C/s 50 0 0 19841 50 100 150 200 250 300 Time (s) Fig. 8 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020D www.vishay.com 454 Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant. Time between soldering and removing from MBB must not exceed the time indicated in J-STD-020: Moisture sensitivity: level 4 Floor life: 72 h Conditions: Tamb < 30 °C, RH < 60 % DRYING In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or recommended conditions: 192 h at 40 °C (+ 5 °C), RH < 5 % or 96 h at 60 °C (+ 5 °C), RH < 5 %. For technical questions, contact: [email protected] Document Number: 84685 Rev. 1.5, 08-Sep-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1