TRIQUINT TGC1430E

Advance Product Information
August 29, 2000
Single-Balanced Down Converter
TGC1430E
Key Features and Performance
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0.25um pHEMT Technology
20-40 GHz RF/LO Range
DC -1GHz IF
-8 dB conversion Gain at 500MHz IF
+15dBm LO drive
Primary Applications
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Chip Dimensions 1.26 mm x 1.19 mm
Point-to-Point Radio
Point-to-Multipoint Communications
Conversion Gain vs LO Drive
Conversion Gain vs IF Frequency
0
50
45
-5
40
-10
LO Return Loss (dB)
Isolation (dB)
35
30
25
20
15
LO Drive Level = +15dBm
RF Drive Level = -15dBm
10
-15
-20
-25
-30
-35
5
-40
0
2
6
10
14
18
22
26
30
34
38
42
46
50
-45
18
20
22
24
26
Frequency (GHz)
R2I
L2I
RF and LO to IF Isolation
28
30
32
34
36
38
40
Frequency (GHz)
Drive Level (dBm):
12.5
15
17.5
LO Return Loss
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications subject to change without notice
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
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Advance Product Information
August 29, 2000
TGC1430E
TGC1430E - Recommended Assembly Drawing
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications subject to change without notice
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
August 29, 2000
TGC1430E
Assembly Process Notes
Reflow process assembly notes:
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AuSn (80/20) solder with limited exposure to temperatures at or above 300ΓC
alloy station or conveyor furnace with reducing atmosphere
no fluxes should be utilized
coefficient of thermal expansion matching is critical for long-term reliability
storage in dry nitrogen atmosphere
Component placement and adhesive attachment assembly notes:
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vacuum pencils and/or vacuum collets preferred method of pick up
avoidance of air bridges during placement
force impact critical during auto placement
organic attachment can be used in low-power applications
curing should be done in a convection oven; proper exhaust is a safety concern
microwave or radiant curing should not be used because of differential heating
coefficient of thermal expansion matching is critical
Interconnect process assembly notes:
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thermosonic ball bonding is the preferred interconnect technique
force, time, and ultrasonics are critical parameters
aluminum wire should not be used
discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire
maximum stage temperature: 200ΓC
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com