T H AT Corporation Quad Low-Noise NPN / PNP Transistor Array THAT140 FEATURES APPLICATIONS · Two Matched NPN Transistors Two Matched PNP Transistors · Monolithic Construction · Low Noise — 0.75 nV/ Hz (PNP) — 0.8 nV/ Hz (NPN) · High Speed — ft= 350 MHz (NPN) — ft= 325 MHz (PNP) · Excellent Matching - 500 mV typ · Dielectrically Isolated · 25 V VCEO · Microphone Preamplifiers · Tape Head Preamplifiers · Current Sources · Current Mirrors · Log/Antilog Amplifiers · Multipliers DESCRIPTION The resulting low collector-to-substrate capacitance produces a typical NPN ft of 350 MHz, 325 Mhz for THAT140 is a quad, large-geometry monolithic NPN/PNP transistor array which combines low noise, high speed and excellent parametric matching. The the PNPs. This delivers AC performance similar to discrete 2N3904- and 2N3906-class devices. Dielectric isolation also minimizes crosstalk and provides complete DC isolation. Substrate biasing is not required for normal oper- large geometries typically result in 25 W base spreading resistance for the PNP devices (30 W for the NPNs), producing 0.75 nV Hz voltage noise (0.8 nV Hz for the NPNs). This makes these parts an ideal choice for low-noise amplifier input stages. Fabricated on a Complementary Bipolar Dielectrically Isolated process, all four transistors are electrically isolated from each other by a layer of oxide. 14 13 ation, though the substrate should be grounded to optimize speed. The monolithic construction assures excellent parameter matching and tracking over temperature. 11 12 NC Q2 Q1 1 2 8 9 10 Q4 Q3 3 4 5 SUB 6 7 Figure 1. Pin Configuration THAT Corporation; 45 Sumner St., Milford, Massachusetts; 01757-1656; USA Tel: +1 (508) 478-9200; Fax: +1 (508) 478-0990; Web: www.thatcorp.com Rev. 11/29/00 Page 2 SPECIFICATIONS 1 Maximum Ratings (T A = 25°C) Parameter Symbol Conditions Min Typ Max Units NPN Collector-Emitter Voltage BVCEO IC = 1 mAdc, IB = 0 25 35 ¾ V NPN Collector-Base Voltage BVCBO IC = 10 mAdc, IE = 0 25 35 ¾ V NPN Emitter-Base Voltage BVEBO IE = 10 mAdc, IC = 0 5 ¾ ¾ V NPN Collector Current IC 10 20 mA NPN Emitter Current IE 10 20 mA PNP Collector-Emitter Voltage BVCEO IC = 1 mAdc, IB = 0 -25 -40 ¾ V PNP Collector-Base Voltage BVCBO IC = 10 mAdc, IE = 0 -25 -40 ¾ V PNP Emitter-Base Voltage BVEBO IE = 10 mAdc, IC = 0 -5 ¾ ¾ V PNP Collector Current IC -10 -20 mA PNP Emitter Current IE -10 -20 mA Collector-Collector Voltage BVCC ±100 ±200 ¾ V Emitter-Emitter Voltage BVEE ±100 ±200 ¾ V TA 0 70 °C 150 °C 125 °C Operating Temperature Range Maximum Junction Temperature TJMAX Storage Temperature TSTORE -45 0.750±0.004 (19.05±0.10) 0.050 (1.27) Typ 0.25±.004 (6.35±0.10) 1 0.157 0.245 (3.99) (6.2) Max Max 0.32 Max. (8.13) 0.060 (1.52) Typ. 1 0.125±0.004 (3.18±0.10) 0.018 (0.46) Max 0.10 Typ. (2.54) 0.018 (0.46) 0.010 (0.25) 0.344 (8.74) Max 0.069 (1.75) Max 0.010 (0.25) Max 0.075 (1.91) Figure 2. Dual-In-Line Package Outline Figure 3. Surface Mount Package Outline THAT Corporation; 45 Sumner St., Milford, Massachusetts; 01757-1656; USA Tel: +1 (508) 478-9200; Fax: +1 (508) 478-0990; Web: www.thatcorp.com Page 3 THAT140 Transistor Array Electrical Characteristics 2 Parameter NPN Current Gain Symbol Conditions hfe VCB = 10 V Min Typ Max IC = 1 mA 60 100 ¾ IC = 10 mA 60 100 ¾ Units NPN Current Gain Matching Dhfe VCB = 10 V, IC = 1 mA — 5 — % NPN Noise Voltage Density eN VCB = 10 V, IC = 1 mA, 1 kHz — 0.8 — nV / Hz ft IC = 1 mA, VCB = 10 V NPN Gain-Bandwidth Product NPN DVBE (VBE1-VBE2) NPN DIB (IB1-IB2) VOS IOS 350 MHz IC = 1 mA — ±0.5 ±3 mV IC = 10 mA — ±0.5 ±3 mV IC = 1 mA — ±500 ±1500 nA IC = 10 mA — ±5 ±15 nA NPN Collector-Base Leakage Current ICBO VCB = 25 V — 25 — pA NPN Bulk Resistance rBE VCB = 0 V, 10mA < IC < 10mA — 2 — W NPN Base Spreading Resistance rbb VCB = 10 V, IC = 1mA — 30 — W NPN Collector Saturation Voltage VCE(SAT) IC = 1 mA, IB = 100 mA — 0.05 V COB VCB = 10 V, IE = 0 mA, 100 kHz 3 pF CCC VCC = 0 V, 100 kHz 0.7 pF hfe VCB = 10 V NPN Output Capacitance NPN Collector-Collector Capacitance (Q1-Q2) PNP Current Gain IC = 1 mA 50 75 ¾ IC = 10 mA 50 75 ¾ PNP Current Gain Matching Dhfe VCB = 10 V, IC = 1 mA — 5 — % PNP Noise Voltage Density eN VCB = 10 V, IC = 1 mA, 1 kHz — 0.75 — nV / Hz ft IC = 1 mA, VCB = 10 V PNP Gain-Bandwidth Product PNP DVBE (VBE3-VBE4) VOS PNP DIB (IB3-IB4) IOS 325 MHz IC = 1 mA — ±0.5 ±3 mV IC = 10 mA — ±0.5 ±3 mV IC = 1 mA — ±700 ±1800 nA IC = 10 mA — ±7 ±18 nA PNP Collector-Base Leakage Current ICBO VCB = 25 V — -25 — pA PNP Bulk Resistance rBE VCB = 0 V, 10mA < IC < 10mA — 2 — W PNP Base Spreading Resistance rbb VCB = 10 V, IC = 1mA — 25 — W PNP Collector Saturation Voltage VCE(SAT) IC = 1 mA, IB = 100 mA — -0.05 V COB VCB = 10 V, IE = 0 mA, 100 kHz 3 pF CCC VCC = 0 V, 100 kHz 0.6 pF PNP Output Capacitance PNP Collector-Collector Capacitance (Q3-Q4) 1. All specifications subject to change without notice. 2. Unless otherwise noted, TA=25°C. THAT Corporation; 45 Sumner St., Milford, Massachusetts; 01757-1656; USA Tel: +1 (508) 478-9200; Fax: +1 (508) 478-0990; Web: www.thatcorp.com Rev. 11/29/00 Page 4 Notes THAT Corporation; 45 Sumner St., Milford, Massachusetts; 01757-1656; USA Tel: +1 (508) 478-9200; Fax: +1 (508) 478-0990; Web: www.thatcorp.com