POINN TIC263M

TIC263 SERIES
SILICON TRIACS
Copyright © 1997, Power Innovations Limited, UK
●
High Current Triacs
●
25 A RMS
●
Glass Passivated Wafer
●
400 V to 800 V Off-State Voltage
●
175 A Peak Current
●
Max IGT of 50 mA (Quadrants 1 - 3)
DECEMBER 1971 - REVISED MARCH 1997
SOT-93 PACKAGE
(TOP VIEW)
MT1
1
MT2
2
G
3
Pin 2 is in electrical contact with the mounting base.
MDC2AD
absolute maximum ratings over operating case temperature (unless otherwise noted)
RATING
SYMBOL
VALUE
TIC263D
TIC263M
Repetitive peak off-state voltage (see Note 1)
TIC263S
UNIT
400
600
VDRM
V
700
TIC263N
800
IT(RMS)
25
Peak on-state surge current full-sine-wave (see Note 3)
ITSM
175
A
Peak gate current
IGM
±1
A
Operating case temperature range
TC
-40 to +110
°C
Storage temperature range
Tstg
-40 to +125
°C
TL
230
°C
Full-cycle RMS on-state current at (or below) 70°C case temperature (see Note 2)
Lead temperature 1.6 mm from case for 10 seconds
A
NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.
2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 70°C derate linearly to 110°C case temperature at
the rate of 625 mA/°C.
3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage
and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
IDRM
IGTM
VGTM
VTM
IH
MIN
TEST CONDITIONS
Repetitive peak
VD = Rated VDRM
off-state current
IG = 0
TYP
TC = 110°C
MAX
UNIT
±2
mA
Vsupply = +12 V†
RL = 10 Ω
tp(g) > 20 µs
7
50
Peak gate trigger
Vsupply = +12 V†
RL = 10 Ω
tp(g) > 20 µs
-15
-50
current
Vsupply = -12 V†
RL = 10 Ω
tp(g) > 20 µs
-16
-50
Vsupply = -12 V†
RL = 10 Ω
tp(g) > 20 µs
28
Vsupply = +12 V†
RL = 10 Ω
tp(g) > 20 µs
0.7
2
Peak gate trigger
Vsupply = +12 V†
RL = 10 Ω
tp(g) > 20 µs
-0.7
-2
voltage
Vsupply = -12 V†
RL = 10 Ω
tp(g) > 20 µs
-0.8
-2
Vsupply = -12 V†
RL = 10 Ω
tp(g) > 20 µs
0.8
2
ITM = ±35.2 A
IG = 50 mA
(see Note 4)
±1.5
±1.7
Vsupply = +12 V†
IG = 0
Init’ ITM = 100 mA
6
40
Vsupply = -12 V†
IG = 0
Init’ ITM = -100 mA
-13
-40
Peak on-state voltage
Holding current
mA
V
V
mA
† All voltages are with respect to Main Terminal 1.
NOTE 4: This parameter must be measured using pulse techniques, tp = ≤ 1 ms, duty cycle ≤ 2 %. Voltage-sensing contacts separate from
the current carrying contacts are located within 3.2 mm from the device body.
PRODUCT
INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
TIC263 SERIES
SILICON TRIACS
DECEMBER 1971 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature (unless otherwise noted) (continued)
PARAMETER
IL
Vsupply = +12 V†
Latching current
off-state voltage
dv/dt(c)
di/dt
TYP
VD = Rated VD
MAX
UNIT
20
(see Note 5)
Vsupply = -12 V†
Critical rate of rise of
dv/dt
MIN
TEST CONDITIONS
mA
-20
IG = 0
TC = 110°C
Critical rise of
VD = Rated VD
TC = 80°C
commutation voltage
di/dt = 0.5 IT(RMS)/ms
IT = 1.4 IT(RMS)
Critical rate of rise of
VD = Rated VD
on -state current
diG/dt = 50 mA/µs
IGT = 50 mA
TC = 110°C
±450
V/µs
±1
V/µs
±200
A/µs
† All voltages are with respect to Main Terminal 1.
NOTE 5: The triacs are triggered by a 15-V (open-circuit amplitude) pulse supplied by a generator with the following characteristics:
RG = 100 Ω, tp(g) = 20 µs, tr = ≤ 15 ns, f = 1 kHz.
thermal characteristics
PARAMETER
RθJC
Junction to case thermal resistance
RθJA
Junction to free air thermal resistance
MIN
TYP
MAX
UNIT
1.52
°C/W
36
°C/W
TYPICAL CHARACTERISTICS
GATE TRIGGER CURRENT
vs
IGT - Gate Trigger Current - mA
100
10
1
0·1
-60
Vsupply IGTM
+
+
+
+
-40
-20
VAA = ± 12 V
0
20
40
60
ALL QUADRANTS
0·01
VAA = ± 12 V
RL = 10 Ω
tp(g) = 20 µs
tp(g) = 20 µs
80
100
120
Figure 1.
2
TC10AB
0·1
RL = 10 Ω
TC - Case Temperature - °C
PRODUCT
CASE TEMPERATURE
TC10AA
VGT - Gate Trigger Voltage - V
CASE TEMPERATURE
1000
GATE TRIGGER VOLTAGE
vs
INFORMATION
0·001
-60
-40
-20
0
20
40
60
80
TC - Case Temperature - °C
Figure 2.
100
120
TIC263 SERIES
SILICON TRIACS
DECEMBER 1971 - REVISED MARCH 1997
TYPICAL CHARACTERISTICS
GATE FORWARD VOLTAGE
vs
GATE FORWARD CURRENT
HOLDING CURRENT
vs
CASE TEMPERATURE
TC10AD
10
1
0·1
-60
Vsupply
VAA = ± 12 V
+
-
IG = 0
Initiating ITM = 100 mA
-40
-20
0
20
40
60
80
100
TC10AC
10
VGF - Gate Forward Voltage - V
IH - Holding Current - mA
100
MAX
TYP
MIN
1
0·1
IA = 0
TC = 25 °C
QUADRANT 1
0·01
0·001
120
0·01
0·1
1
10
IGF - Gate Forward Current - A
TC - Case Temperature - °C
Figure 3.
Figure 4.
LATCHING CURRENT
vs
CASE TEMPERATURE
TC10AE
IL - Latching Current - mA
1000
100
10
Vsupply IGTM
+
+
1
-60
-40
+
+
VAA = ± 12 V
-20
0
20
40
60
80
100
120
TC - Case Temperature - °C
Figure 5.
PRODUCT
INFORMATION
3
TIC263 SERIES
SILICON TRIACS
DECEMBER 1971 - REVISED MARCH 1997
MECHANICAL DATA
SOT-93
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
SOT-93
4,90
4,70
ø
15,2
14,7
4,1
4,0
3,95
4,15
1,37
1,17
16,2 MAX.
12,2 MAX.
31,0 TYP.
18,0 TYP.
1
2
3
1,30
0,78
0,50
1,10
11,1
10,8
2,50 TYP.
ALL LINEAR DIMENSIONS IN MILLIMETERS
NOTE A: The centre pin is in electrical contact with the mounting tab.
PRODUCT
4
INFORMATION
MDXXAW
TIC263 SERIES
SILICON TRIACS
DECEMBER 1971 - REVISED MARCH 1997
IMPORTANT NOTICE
Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any
semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the
information being relied on is current.
PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI
deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except as mandated by government requirements.
PI accepts no liability for applications assistance, customer product design, software performance, or infringement
of patents or services described herein. Nor is any license, either express or implied, granted under any patent
right, copyright, design right, or other intellectual property right of PI covering or relating to any combination,
machine, or process in which such semiconductor products or services might be or are used.
PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE
SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.
Copyright © 1997, Power Innovations Limited
PRODUCT
INFORMATION
5