TIC253D, TIC253M, TIC253N, TIC253S

TIC253 SERIES
SILICON TRIACS
●
High Current Triacs
●
20 A RMS
●
Glass Passivated Wafer
●
400 V to 800 V Off-State Voltage
●
150 A Peak Current
●
Max IGT of 50 mA (Quadrants 1 - 3)
SOT-93 PACKAGE
(TOP VIEW)
MT1
1
MT2
2
G
3
Pin 2 is in electrical contact with the mounting base.
MDC2ADA
absolute maximum ratings over operating case temperature (unless otherwise noted)
RATING
SYMBOL
VALUE
TIC253D
E
T
E
L
O
S
B
O
TIC253M
Repetitive peak off-state voltage (see Note 1)
TIC253S
600
VDRM
V
700
TIC253N
Full-cycle RMS on-state current at (or below) 70°C case temperature (see Note 2)
UNIT
400
800
IT(RMS)
20
A
Peak on-state surge current full-sine-wave at (or below) 25°C case temperature (see Note 3)
ITSM
150
A
Peak gate current
IGM
±1
A
Operating case temperature range
TC
-40 to +110
°C
Storage temperature range
Tstg
-40 to +125
°C
TL
230
°C
Lead temperature 1.6 mm from case for 10 seconds
NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.
2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 70°C derate linearly to 110°C case temperature at
the rate of 500 mA/°C.
3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of peak reverse volta ge
and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.
electrical characteristics at 25°C case temperature (unless otherwise noted )
PARAMETER
IDRM
IGT
VGT
VT
TEST CONDITIONS
Repetitive peak
off-state current
MIN
VD = Rated VDRM
IG = 0
TC = 110°C
TYP
MAX
UNIT
±2
mA
Vsupply = +12 V†
RL = 10 Ω
tp(g) > 20 µs
15
50
Gate trigger
Vsupply = +12 V†
RL = 10 Ω
tp(g) > 20 µs
-30
-50
current
Vsupply = -12 V†
RL = 10 Ω
tp(g) > 20 µs
-20
-50
Vsupply = -12 V†
RL = 10 Ω
tp(g) > 20 µs
32
Vsupply = +12 V†
RL = 10 Ω
tp(g) > 20 µs
0.8
2
Gate trigger
Vsupply = +12 V†
RL = 10 Ω
tp(g) > 20 µs
-0.8
-2
voltage
Vsupply = -12 V†
RL = 10 Ω
tp(g) > 20 µs
-0.8
-2
On-state voltage
Vsupply = -12 V†
RL = 10 Ω
tp(g) > 20 µs
0.8
2
IT = ±28.2 A
IG = 50 mA
(see Note 4)
±1.4
±1.7
mA
V
V
† All voltages are with respect to Main Terminal 1.
NOTE 4: This parameter must be measured using pulse techniques, t p = ≤ 1 ms, duty cycle ≤ 2 %. Voltage-sensing contacts separate from
the current carrying contacts are located within 3.2 mm from the device body.
DECEMBER 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1
TIC253 SERIES
SILICON TRIACS
electrical characteristics at 25°C case temperature (unless otherwise noted) (continued)
PARAMETER
TEST CONDITIONS
IH
Holding current
IL
Latching current
di/dt
Init’ IT = 100 mA
20
40
Vsupply = -12 V†
IG = 0
Init’ IT = -100 mA
-10
-40
MIN
VD = Rated VD
UNIT
mA
20
(see Note 5)
Vsupply = -12 V†
off-state voltage
dv/dt(c)
MAX
IG = 0
Vsupply = +12 V†
Critical rate of rise of
dv/dt
TYP
Vsupply = +12 V†
mA
-20
IG = 0
TC = 110°C
Critical rise of
VD = Rated VD
TC = 80°C
commutation voltage
di/dt = 0.5 IT(RMS)/ms
IT = 1.4 IT(RMS)
Critical rate of rise of
VD = Rated VD
on -state current
diG/dt = 50 mA/µs
IGT = 50 mA
TC = 110°C
±450
V/µs
±1
V/µs
±100
A/µs
† All voltages are with respect to Main Terminal 1.
NOTE 5: The triacs are triggered by a 15-V (open-circuit amplitude) pulse supplied by a generator with the following characteristics:
R G = 100 Ω, tp(g) = 20 µs, tr = ≤ 15 ns, f = 1 kHz.
thermal characteristics
PARAMETER
RθJC
Junction to case thermal resistance
RθJA
Junction to free air thermal resistance
MIN
TYP
E
T
E
L
O
S
B
O
MAX
UNIT
1.52
°C/W
36
°C/W
TYPICAL CHARACTERISTICS
GATE TRIGGER CURRENT
vs
IGT - Gate Trigger Current - mA
10
Vsupply IGTM
+
+
+
+
1
-60
-40
-20
VAA = ± 12 V
0
20
40
60
ALL QUADRANTS
1
VAA = ± 12 V
RL = 10 Ω
tp(g) = 20 µs
tp(g) = 20 µs
80
100
120
0.1
-60
-40
-20
0
20
40
60
80
100
120
TC - Case Temperature - °C
Figure 2.
2
TC10AB
10
RL = 10 Ω
TC - Case Temperature - °C
Figure 1.
CASE TEMPERATURE
TC10AA
VGT - Gate Trigger Voltage - V
CASE TEMPERATURE
100
GATE TRIGGER VOLTAGE
vs
DECEMBER 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
TIC253 SERIES
SILICON TRIACS
TYPICAL CHARACTERISTICS
HOLDING CURRENT
vs
LATCHING CURRENT
vs
CASE TEMPERATURE
10
1
Vsupply
100
E
T
E
L
O
S
B
O
10
Vsupply IGTM
+
+
-
IG = 0
Initiating ITM = 100 mA
-40
-20
0
20
40
60
80
100
120
1
-60
-40
+
+
-20
0
20
40
VAA = ± 12 V
60
80
TC - Case Temperature - °C
TC - Case Temperature - °C
Figure 3.
Figure 4.
TC10AE
1000
VAA = ± 12 V
+
0·1
-60
CASE TEMPERATURE
TC10AD
IL - Latching Current - mA
IH - Holding Current - mA
100
100
120
DECEMBER 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
3