TISP3070H3SL THRU TISP3115H3SL, TISP3125H3SL THRU TISP3210H3SL, TISP3250H3SL THRU TISP3350H3SL DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS TISP3xxxH3SL Overvoltage Protector Series TISP3xxxH3SL Overview This TISP® device series protects central office, access and customer premise equipment against overvoltages on the telecom line. The TISP3xxxH3SL protects R-G and T-G. In addition, the device is rated for simultaneous R-G and T-G impulse conditions. The TISP3xxxH3SL is available in a wide range of voltages and has a high current capability, allowing minimal series resistance to be used. These protectors have been specified mindful of the following standards and recommendations: GR-1089-CORE, FCC Part 68, UL1950, EN 60950, IEC 60950, ITU-T K.20, K.21 and K.45. The TISP3350H3SL meets the FCC Part 68 “B” ringer voltage requirement and survives both Type A and B impulse tests. These devices are housed in a through-hole 3-pin single-in-line (SL) plastic package. Summary Electrical Characteristics VDRM V(BO) VT @ IT V V V TISP3070H3 58 70 3 TISP3080H3 65 80 3 TISP3095H3 75 95 3 TISP3115H3 90 115 3 TISP3125H3 100 125 3 TISP3135H3 110 135 3 TISP3145H3 120 145 3 TISP3180H3 145 180 3 TISP3210H3 160 210 3 TISP3250H3 190 250 3 TISP3290H3 220 290 3 TISP3350H3 275 350 3 † Bourns part has an improved protection voltage Part # IDRM µA 5 5 5 5 5 5 5 5 5 5 5 5 I(BO) mA 600 600 600 600 600 600 600 600 600 600 600 600 IT A 5 5 5 5 5 5 5 5 5 5 5 5 IH mA 150 150 150 150 150 150 150 150 150 150 150 150 Co @ -2 V pF 140 140 140 74 74 74 74 74 74 62 62 62 Functionally Replaces P1402AC† P1602AC† ITSM A 1 cycle 60 Hz 60 di/dt A/µs 2/10 Wavefront 400 P2202AC† P2702AC† P3002AC P3602AC† P4202AC P4802AC† P6002AC Summary Current Ratings ITSP A Parameter Waveshape Value 96 2/10 500 1.2/50, 8/20 300 10/160 250 5/320 200 10/560 130 10/1000 100 JANUARY 1999 - REVISED OCTOBER 2000 Specifications are subject to change without notice. TISP3xxxH3SL Overvoltage Protector Series ITU-T K.20/21 Rating . . . . . . . . 8 kV 10/700, 200 A 5/310 SL Package (Top View) Ion-Implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge Device ‘3070 ‘3080 ‘3095 ‘3115 ‘3125 ‘3135 ‘3145 ‘3180 ‘3210 ‘3250 ‘3290 ‘3350 VDRM V(BO) V 58 65 75 90 100 110 120 145 160 190 220 275 V 70 80 95 115 125 135 145 180 210 250 290 350 Standard 2/10 µs 8/20 µs 10/160 µs GR-1089-CORE IEC 61000-4-5 FCC Part 68 FCC Part 68 ITU-T K.20/21 FCC Part 68 GR-1089-CORE 10/700 µs 10/560 µs 10/1000 µs 1 G 2 R 3 MDXXAGA Device Symbol T R SD3XAA G Terminals T, R and G correspond to the alternative line designators of A, B and C Rated for International Surge Wave Shapes - Single and Simultaneous Impulses Waveshape T ITSP A 500 300 250 3-Pin Through-Hole Packaging - Compatible with TO-220AB pin-out - Low Height ................................................................... 8.3mm Low Differential Capacitance ...................................... < 67 pF 200 .............................................. UL Recognized Component 160 100 Description The TISP3xxxH3SL limits overvoltages between the telephone line Ring and Tip conductors and Ground. Overvoltages are normally caused by a.c. power system or lightning flash disturbances which are induced or conducted on to the telephone line. The protector consists of two symmetrical voltage-triggered bidirectional thyristors. Overvoltages are initially clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current prevents d.c. latchup as the diverted current subsides. How To Order Device Package Carrier Order As TISP3xxxH3 SL (Single-in-Line) Tube TISP3xxxH3SL Insert xxx value corresponding to protection voltages of 070, 080, 095, 115 etc. This TISP3xxxH3SL range consists of twelve voltage variants to meet various maximum system voltage levels (58 V to 275 V). They are guaranteed to voltage limit and withstand the listed international lightning surges in both polarities. These high current protection devices are in a 3-pin single-in-line (SL) plastic package and are supplied in tube pack. For alternative impulse rating, voltage and holding current values in SL packaged protectors, consult the factory. For lower rated impulse currents in the SL package, the 35 A 10/1000 TISP3xxxF3SL series is available. These monolithic protection devices are fabricated in ion-implanted planar structures to ensure precise and matched breakover control and are virtually transparent to the system in normal operation. JANUARY 1999 - REVISED OCTOBER 2000 Specifications are subject to change without notice. 97 TISP3xxxH3SL Overvoltage Protector Series Absolute Maximum Ratings, TA = 25 °C (Unless Otherwise Noted) Rating Repetitive peak off-state voltage, (see Note 1) Symbol ‘3070 ‘3080 ‘3095 ‘3115 ‘3125 ‘3135 ‘3145 ‘3180 ‘3210 ‘3250 ‘3290 ‘3350 Non-repetitive peak on-state pulse current (see Notes 2, 3 and 4) 2/10 µs (GR-1089-CORE, 2/10 µs voltage wave shape) 8/20 µs (IEC 61000-4-5, 1.2/50 µs voltage, 8/20 current combination wave generator) 10/160 µs (FCC Part 68, 10/160 µs voltage wave shape) 5/200 µs (VDE 0433, 10/700 µs voltage wave shape) 0.2/310 µs (I3124, 0.5/700 µs voltage wave shape) 5/310 µs (ITU-T K.20/21, 10/700 µs voltage wave shape) 5/310 µs (FTZ R12, 10/700 µs voltage wave shape) 5/320 µs (FCC Part 68, 9/720 µs voltage wave shape) 10/560 µs (FCC Part 68, 10/560 µs voltage wave shape) 10/1000 µs (GR-1089-CORE, 10/1000 µs voltage wave shape) Non-repetitive peak on-state current (see Notes 2, 3 and 5) 20 ms (50 Hz) full sine wave 16.7 ms (60 Hz) full sine wave 1000 s 50 Hz/60 Hz a.c. Initial rate of rise of on-state current, Exponential current ramp, Maximum ramp value < 200 A Junction temperature Storage temperature range VDRM ITSP Value ± 58 ± 65 ± 75 ±90 ±100 ±110 ±120 ±145 ±160 ±190 ±220 ±275 500 300 250 220 200 200 200 200 160 100 Unit V A ITSM 55 60 1 A diT/dt TJ Tstg 400 -40 to +150 -65 to +150 A/µs °C °C NOTES: 1. See Figure 9 for voltage values at lower temperatures. 2. Initially the TISP3xxxH3SL must be in thermal equilibrium. 3. These non-repetitive rated currents are peak values of either polarity. The rated current values may be applied to the R or T terminals. Additionally, both R and T terminals may have their rated current values applied simultaneously (in this case the G terminal return current will be the sum of the currents applied to the R and T terminals). The surge may be repeated after the TISP3xxxH3SL returns to its initial conditions. 4. See Figure 10 for impulse current ratings at other temperatures. Above 85 °C, derate linearly to zero at 150 °C lead temperature. 5. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring track widths. See Figure 8 for the current ratings at other durations. Figure 8 shows the R and T terminal current rating for simultaneous operation. In this condition, the G terminal current will be 2xITSM(t), the sum of the R and T terminal currents. Derate current values at -0.61 %/°C for ambient temperatures above 25 °C. 98 JANUARY 1999 - REVISED OCTOBER 2000 Specifications are subject to change without notice. TISP3xxxH3SL Overvoltage Protector Series Electrical Characteristics for the R and G or T and G Terminals, TA = 25 °C (Unless Otherwise Noted) IDRM Parameter Repetitive peak offstate current VD = VDRM V(BO) Breakover voltage dv/dt = ±750 V/ms, V(BO) Impulse breakover voltage dv/dt ≤ ±1000 V/µs, Linear voltage ramp, Maximum ramp value = ±500 V di/dt = ±20 A/µs, Linear current ramp, Maximum ramp value = ±10 A I(BO) VT IH dv/dt ID Breakover current On-state voltage Holding current Critical rate of rise of off-state voltage Off-state current Test Conditions RSOURCE = 300 Ω dv/dt = ±750 V/ms, RSOURCE = 300 Ω IT = ±5 A, tW = 100 µs IT = ±5 A, di/dt = - /+30 mA/ms Off-state capacitance VD = ±50 V f = 100 kHz, Vd = 1 V rms, VD = 0, f = 100 kHz, Vd = 1 V rms, VD = -2 V f = 100 kHz, Vd = 1 V rms, VD = -50 V f = 100 kHz, Vd = 1 V rms, VD = -100 V (see Note 6) NOTE ±0.15 ±0.15 Linear voltage ramp, Maximum ramp value < 0.85VDRM f = 100 kHz, Vd = 1 V rms, VD = -1 V Coff Min TA = 25 °C TA = 85 °C ‘3070 ‘3080 ‘3095 ‘3115 ‘3125 ‘3135 ‘3145 ‘3180 ‘3210 ‘3250 ‘3290 ‘3350 ‘3070 ‘3080 ‘3095 ‘3115 ‘3125 ‘3135 ‘3145 ‘3180 ‘3210 ‘3250 ‘3290 ‘3350 TA = 85 °C ‘3070 thru ‘3115 ‘3125 thru ‘3210 ‘3250 thru ‘3350 ‘3070 thru ‘3115 ‘3125 thru ‘3210 ‘3250 thru ‘3350 ‘3070 thru ‘3115 ‘3125 thru ‘3210 ‘3250 thru ‘3350 ‘3070 thru ‘3115 ‘3125 thru ‘3210 ‘3250 thru ‘3350 ‘3125 thru ‘3210 ‘3250 thru ‘3350 Typ Max ±5 ±10 ±70 ±80 ±95 ±115 ±125 ±135 ±145 ±180 ±210 ±250 ±290 ±350 ±78 ±88 ±103 ±124 ±134 ±144 ±154 ±189 ±220 ±261 ±302 ±362 ±0.6 ±3 ±0.6 ±5 Unit µA V V A V A kV/µs ±10 170 90 84 150 79 67 140 74 62 73 35 28 33 26 µA pF 6: To avoid possible voltage clipping, the ‘3125 is tested with VD = -98 V. JANUARY 1999 - REVISED OCTOBER 2000 Specifications are subject to change without notice. 99 TISP3xxxH3SL Overvoltage Protector Series Electrical Characteristics for the R and T Terminals, TA = 25 °C (Unless Otherwise Noted) IDRM Parameter Repetitive peak offstate current Test Conditions Min Typ VD = 2VDRM V(BO) Breakover voltage dv/dt = ±750 V/ms, RSOURCE = 300 Ω V(BO) Impulse breakover voltage dv/dt ≤ ±1000 V/µs, Linear voltage ramp, Maximum ramp value = ±500 V di/dt = ±20 A/µs, Linear current ramp, Maximum ramp value = ±10 A Max Unit ±5 µA ±140 ±160 ±190 ±230 ±250 ±270 ±290 ±360 ±420 ±500 ±580 ±700 ±156 ±176 ±206 ±248 ±268 ±288 ±308 ±378 ±440 ±252 ±604 ±724 ‘3070 ‘3080 ‘3095 ‘3115 ‘3125 ‘3135 ‘3145 ‘3180 ‘3210 ‘3250 ‘3290 ‘3350 ‘3070 ‘3080 ‘3095 ‘3115 ‘3125 ‘3135 ‘3145 ‘3180 ‘3210 ‘3250 ‘3290 ‘3350 V V Thermal Characteristics Parameter RθJA NOTE 100 Junction to free air thermal resistance Test Conditions EIA/JESD51-3 PCB, IT = ITSM(1000), TA = 25 °C, (see Note 7) Min Typ Max Unit 50 °C/W 7: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths. JANUARY 1999 - REVISED OCTOBER 2000 Specifications are subject to change without notice. TISP3xxxH3SL Overvoltage Protector Series Parameter Measurement Information +i Quadrant I ITSP Switching Characteristic ITSM IT V(BO) VT I(BO) IH IDRM ID VD VDRM -v ID IDRM VD VDRM +v IH I(BO) VT V(BO) IT ITSM Quadrant III ITSP Switching Characteristic -i VD = ±50 V and ID = ±10 µA used for reliability release PM4XAAC Figure 1. Voltage- current Characteristic for Terminal Pairs JANUARY 1999 - REVISED OCTOBER 2000 Specifications are subject to change without notice. 101 TISP3xxxH3SL Overvoltage Protector Series Typical Characteristics OFF-STATE CURRENT vs JUNCTION TEMPERATURE 100 TCHAG NORMALIZED BREAKOVER VOLTAGE vs JUNCTION TEMPERATURE TC4HAF 1.10 VD = ±50 V Normalized Breakover Voltage |ID| - Off-State Current - µA 10 1 0·1 0·01 1.05 1.00 0.95 0·001 -25 0 25 50 75 100 125 TJ - Junction Temperature - °C -25 150 Figure 2. 200 150 100 ON-STATE CURRENT vs ON-STATE VOLTAGE TC7AJ Normalized Holding Current IT - On-State Current - A 1 0.7 '3125 THRU '3210 '3250 THRU '3350 TC4HAD 1.5 20 15 2 1.5 NORMALIZED HOLDING CURENT vs JUNCTION TEMPERATURE 2.0 TA = 25 °C tW = 100 µs 50 40 30 7 5 4 3 150 Figure 3. 70 10 0 25 50 75 100 125 TJ - Junction Temperature - °C '3070 THRU '3115 1.0 0.9 0.8 0.7 0.6 0.5 0.4 1 1.5 2 3 4 5 VT - On-State Voltage - V 7 10 Figure 4. -25 0 25 50 75 100 125 TJ - Junction Temperature - °C 150 Figure 5. . 102 JANUARY 1999 - REVISED OCTOBER 2000 Specifications are subject to change without notice. TISP3xxxH3SL Overvoltage Protector Series Typical Characteristics Capacitance Normalized to VD = 0 0.7 0.6 0.5 '3070 THRU '3115 0.4 0.3 '3125 THRU '3210 '3250 THRU '3350 0.2 0.5 1 2 3 5 10 20 30 VD - Off-state Voltage - V Figure 6. JANUARY 1999 - REVISED OCTOBER 2000 Specifications are subject to change without notice. 50 100 150 TC7XAN '3290 '3350 '3250 '3180 '3210 '3125 '3135 '3145 70 '3115 TJ = 25 °C Vd = 1 Vrms 0.8 75 '3095 0.9 TC7HAK '3070 '3080 1 DIFFERENTIAL OFF-STATE CAPACITANCE vs RATED REPETITIVE PEAK OFF-STATE VOLTAGE C - Differential Off-State Capacitance - pF NORMALIZED CAPACITANCE vs OFF-STATE VOLTAGE 65 60 55 DC = Coff(-2 V) - Coff(-50 V) 50 45 40 35 30 50 60 70 80 90100 150 200 250 300 VDRM - Repetitive Peak Off-State Voltage - V Figure 7. 103 TISP3xxxH3SL Overvoltage Protector Series Typical Characteristics ITSM(t) - Non-Repetitive Peak On-State Current - A NON-REPETITIVE PEAK ON-STATE CURRENT vs CURRENT DURATION TI4HACA 20 VGEN = 600 V rms, 50/60 Hz 15 RGEN = 1.4*VGEN/ITSM(t) EIA/JESD51-2 ENVIRONMENT EIA/JESD51-3 PCB, TA = 25 °C 10 9 8 7 6 5 SIMULTANEOUS OPERATION OF R AND T TERMINALS. G TERMINAL CURRENT = 2xITSM(t) 4 3 2 1.5 1 0·1 1 10 100 t - Current Duration - s 1000 Figure 8. 1.00 VDRM DERATING FACTOR vs MINIMUM AMBIIENT TEMPERATURE TC7HAM 700 600 0.99 TC4HAA BELLCORE 2/10 500 400 Impulse Current - A 0.98 Derating Factor IMPULSE RATING vs AMBIENT TEMPERATURE 0.97 '3070 THRU '3115 0.96 0.95 IEC 1.2/50, 8/20 300 FCC 10/160 250 ITU-T 10/700 200 FCC 10/560 150 '3125 THRU '3210 0.94 120 BELLCORE 10/1000 '3250 THRU '3350 0.93 -40 -35 -30 -25 -20 -15 -10 -5 0 5 10 15 20 25 TAMIN - Minimum Ambient Temperature - °C Figure 9. 100 90 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 TA - Ambient Temperature - °C Figure 10. . 104 JANUARY 1999 - REVISED OCTOBER 2000 Specifications are subject to change without notice. TISP3xxxH3SL Overvoltage Protector Series APPLICATIONS INFORMATION Impulse Testing To verify the withstand capability and safety of the equipment, standards require that the equipment is tested with various impulse wave forms. The table below shows some common values. Standard Peak Voltage Setting V Voltage Waveform µs 2/10 10/1000 10/160 10/560 9/720 † 9/720 † 0.5/700 Peak Current Value A Current Waveform µs TISP3xxxH3 25 °C Rating A Series Resistance Ω 2500 500 2/10 500 0 1000 100 10/1000 100 1500 200 10/160 250 0 800 100 10/560 160 0 FCC Part 68 (March 1998) 1500 37.5 5/320 † 200 0 1000 25 5/320 † 200 0 I3124 1500 37.5 0.2/310 200 0 37.5 1500 5/310 200 0 10/700 ITU-T K.20/K.21 100 4000 † FCC Part 68 terminology for the waveforms produced by the ITU-T recommendation K.21 10/700 impulse generator GR-1089-CORE If the impulse generator current exceeds the protector’s current rating, then a series resistance can be used to reduce the current to the protector’s rated value to prevent possible failure. The required value of series resistance for a given waveform is given by the following calculations. First, the minimum total circuit impedance is found by dividing the impulse generator’s peak voltage by the protector’s rated current. The impulse generator’s fictitious impedance (generator’s peak voltage divided by peak short circuit current) is then subtracted from the minimum total circuit impedance to give the required value of series resistance. In some cases, the equipment will require verification over a temperature range. By using the rated waveform values from Figure 10, the appropriate series resistor value can be calculated for ambient temperatures in the range of -40 °C to 85 °C. AC Power Testing The protector can withstand the G return currents applied for times not exceeding those shown in Figure 8. Currents that exceed these times must be terminated or reduced to avoid protector failure. Fuses, PTC (Positive Temperature Coefficient) resistors and fusible resistors are overcurrent protection devices which can be used to reduce the current flow. Protective fuses may range from a few hundred milliamperes to one ampere. In some cases, it may be necessary to add some extra series resistance to prevent the fuse opening during impulse testing. The current versus time characteristic of the overcurrent protector must be below the line shown in Figure 8. In some cases, there may be a further time limit imposed by the test standard (e.g. UL 1459 wiring simulator failure). Capacitance The protector characteristic off-state capacitance values are given for d.c. bias voltage, VD, values of 0, -1 V, -2 V, and -50 V. Where possible, values are also given for -100 V. Values for other voltages may be calculated by multiplying the VD = 0 capacitance value by the factor given in Figure 6. Up to 10 MHz, the capacitance is essentially independent of frequency. Above 10 MHz, the effective capacitance is strongly dependent on connection inductance. In many applications, the typical conductor bias voltages will be about -2 V and -50 V. Figure 7 shows the differential (line unbalance) capacitance caused by biasing one protector at -2 V and the other at -50 V. Normal System Voltage Levels The protector should not clip or limit the voltages that occur in normal system operation. For unusual conditions, such as ringing without the line connected, some degree of clipping is permissible. Under this condition, about 10 V of clipping is normally possible without activating the ring trip circuit. Figure 9 allows the calculation of the protector VDRM value at temperatures below 25 °C. The calculated value should not be less than the maximum normal system voltages. The TISP3290H3, with a VDRM of 220 V, can be used for the protection of ring generators producing 105 V rms of ring on a battery voltage of -58 V. The peak ring voltage will be 58 + 1.414*105 = 206.5 V. However, this is the open circuit voltage and the connection of the line and its equipment will reduce the peak voltage. JANUARY 1999 - REVISED OCTOBER 2000 Specifications are subject to change without notice. 105 TISP3xxxH3SL Overvoltage Protector Series APPLICATIONS INFORMATION Normal System Voltage Levels (continued) For the extreme case of an unconnected line, the temperature at which clipping begins can be calculated using the data from Figure 9. To possibly clip, the VDRM value has to be 206.5 V. This is a reduction of the 220 V 25 °C VDRM value by a factor of 206.5/220 = 0.94. Figure 9 shows that a 0.94 reduction will occur at an ambient temperature of -32 °C. In this example, the TISP3290H3 will allow normal equipment operation, even on an open-circuit line, provided that the minimum expected ambient temperature does not fall below -32 °C. JESD51 Thermal Measurement Method To standardize thermal measurements, the EIA (Electronic Industries Alliance) has created the JESD51 standard. Part 2 of the standard (JESD51-2, 1995) describes the test environment. This is a 0.0283 m3 (1 ft3) cube which contains the test PCB (Printed Circuit Board) horizontally mounted at the center. Part 3 of the standard (JESD51-3, 1996) defines two test PCBs for surface mount components; one for packages smaller than 27 mm (1.06 ”) on a side and the other for packages up to 48 mm (1.89 ”). The thermal measurements used the smaller 76.2 mm x 114.3 mm (3.0 ” x 4.5 ”) PCB. The JESD51-3 PCBs are designed to have low effective thermal conductivity (high thermal resistance) and represent a worse case condition. The PCBs used in the majority of applications will achieve lower values of thermal resistance and so can dissipate higher power levels than indicated by the JESD51 values. 106 JANUARY 1999 - REVISED OCTOBER 2000 Specifications are subject to change without notice. TISP3xxxH3SL Overvoltage Protector Series MECHANICAL DATA SL003 3-pin Plastic Single-in-line Package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. DIMENSIONS ARE: SL003 METRIC (INCHES) 3.20 - 3.40 (0.126 - 0.134) 9.25 - 9.75 (0.364 - 0.384) Index Notch 6.10 - 6.60 (0.240- 0.260) 8.31 (0.327) MAX. 12.9 (0.492) MAX. 4.267 (0.168) MIN. 2 1 1.854 (0.073) MAX. 3 2.54 Typical (0.100) (See Note A) 2 Places 0.203 - 0.356 (0.008- 0.014) 0.559 - 0.711 (0.022 - 0.028) 3 Places MDXXCE NOTES: A. Each pin centerline is located within 0.25 (0.010) of its true longitudinal position. B. Body molding flash of up to 0.15 (0.006) may occur in the package lead plane. JANUARY 1999 - REVISED OCTOBER 2000 Specifications are subject to change without notice. 107