H V SC AV ER O M A I S IO P L L A N IA BL S N T E TISP4070J1BJ THRU TISP4395J1BJ *R o BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS TISP4xxxJ1BJ Overvoltage Protector Series Ground Return Element of Y Configuration -2x Current Capability of Y Upper Elements -Available in a Wide Range of Voltages -Enables Symmetrical and Asymmetrical Y Designs -SMB (DO-214AA) Package SMB Package (Top View) MT1 1 2 MT2 Ion-Implanted Breakdown Region -Precise and Stable Voltage -Low Voltage Overshoot Under Surge VDRM Device MD4JAA Device Symbol V(BO) MT2 V V TISP4070J1 58 70 TISP4080J1 65 80 TISP4095J1 75 95 TISP4115J1 90 115 TISP4125J1 100 125 TISP4145J1 120 145 TISP4165J1 135 165 TISP4180J1 145 180 TISP4200J1 155 200 TISP4219J1 180 219 TISP4250J1 190 250 2/10 GR-1089-CORE 1000 TISP4290J1 220 290 8/20 IEC 61000-4-5 800 TISP4350J1 275 350 10/160 TIA/EIA-IS-968 (FCC Part 68) 400 TISP4395J1 320 395 10/700 ITU-T K.20/21/45 350 10/560 TIA/EIA-IS-968 (FCC Part 68) 250 10/1000 GR-1089-CORE 200 MT1 SD4JAA Rated for International Surge Wave Shapes Wave Shape Standard IPPSM A ............................................ UL Recognized Components Description The TISP4xxxJ1BJ is a symmetrical voltage-triggered bidirectional thyristor device which has been designed as the tail (ground return) element of a Y circuit configured protector. As such, the TISP4xxxJ1BJ must be rated to conduct the sum of the TIP and RING currents. For example, the normal GR-1089-CORE testing can impose 200 A, 10/1000 and 1000 A, 2/10 on the ground return element of the Y configuration. Using the TISP4xxxJ1BJ together with two TISP4xxxH3BJ parts gives a 2x 100 A, 10/1000 Y protector circuit. For ITU-T applications, using the TISP4xxxJ1BJ with a TISP3xxxT3BJ gives a coordinated Y protector with a 2x 120 A, 5/310 capability. Design tables are given in the Applications Information section. These SMB package combinations are often more space efficient than single package Y protection multi-chip integrations. These devices allow signal voltages, without clipping, up to the maximum off-state voltage value, VDRM, see Figure 1. Voltages above VDRM are limited and will not exceed the breakover voltage, V(BO), level. If sufficient current flows due to the overvoltage, the device switches into a lowvoltage on-state condition, which diverts the current from the overvoltage through the device. When the diverted current falls below the holding current, IH , level the devices switches off and restores normal system operation. How to Order Device Package TISP4xxxJ1BJ BJ (SMB/DO-214AA J-Bend) Carrier R (Embossed Tape Reeled) *RoHS Directive 2002/95/EC Jan 27 2003 including Annex SEPTEMBER 2001 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. For Standard Termination Finish Order As For Lead Free Termination Finish Order As TISP4xxxJ1BJR TISP4xxxJ1BJR-S TISP4xxxJ1BJ Overvoltage Protector Series Absolute Maximum Ratings, TA = 25 °C (Unless Otherwise Noted) Rating Symbol ’4070 ±58 ’4080 ±65 ’4095 ±75 ’4115 ±90 ’4125 ±100 ’4145 ±120 ’4165 Repetitive peak off-state voltage Value ’4180 ±135 VDRM ±145 ’4200 ±155 ’4219 ±180 ’4250 ±190 ’4290 ±220 ’4350 ±275 ‘4395 ±320 Unit V Non-repetitive peak on-state pulse current (see Notes 1 and 2) 2/10 (Telcordia GR-1089-CORE, 2/10 voltage wave shape) 1000 8/20 (IEC 61000-4-5, combination wave generator, 1.2/50 volt age wave shape) 800 10/160 (TIA/EIA-IS-968 (Replaces FCC Part 68), 10/160 voltage wave shape) 4/250 (ITU-T K.20/21, 10/700 voltage wave shape, simultaneous) 400 370 IPPSM 5/310 (ITU-T K.20/21, 10/700 volt age wave shape, single) 350 5/320 (TIA/EIA-IS-968 (Replaces FCC Part 68), 9/720 voltage wave shape, single) 350 10/560 (TIA/EIA-IS-968 (Replaces FCC Part 68), 10/560 voltage wave shape) 250 10/1000 (Telcordia GR-1089-CORE, 10/1000 voltage wave shape) 200 A Non-repetitive peak on-state current (see Notes 1 and 2) ITSM 50 Hz, 1 cycle 80 Initial rate of rise of on-s tate current, A 100 60 Hz, 1 cycle Linear current ramp, Maximum ramp value < 50 A Junction temperature Storage temperature range di T/dt 800 A/µs TJ -40 to +150 °C Tstg -65 to +150 °C NOTES: 1. Initially, the device must be in thermal equilibrium with TJ = 25 °C. 2. These non-repetitive rated currents are peak values of either polarity. The surge may be repeated after the device returns to its initial conditions. Recommended Operating Conditions Component Min Series resistor for GR-1089-CORE first-level surge survival Typ Max Unit 0 Series resistor for ITU-T recommendation K. 20/K.45/K.21 (Basic coordi nation with 400 V GDT) R1, R2 Series resistor for TIA/EIA-IS-968 (Replaces FCC Part 68), 9/720 survival 6.5 0 Series resistor for TIA/EIA-IS-968 (Replaces FCC Part 68), 10/560 survival 0 Series resistor for TIA/EIA-IS-968 (Replaces FCC Part 68), 10/160 survival 0 Ω SEPTEMBER 2001 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP4xxxJ1BJ Overvoltage Protector Series Electrical Characteristics, TA = 25 °C (Unless Otherwise Noted) Parameter IDRM Repetitive peak offstate current V(BO) AC breakover voltage V(BO) Test Conditions VD = ±VDRM dv/dt = ±250 V/ms, R SOURCE = 300 Ω Min Typ ±5 TA = 85 °C ±10 4070 ±70 ’4080 ±80 ’4095 ±95 ’4115 ±115 ’4125 ±125 ’4145 ±145 ’4165 ±165 ’4180 ±180 ’4200 ±200 ’4219 ±219 ’4250 ±250 ’4290 ±290 ’4350 ±350 ‘4395 ±395 4070 ±77 ’4080 ±88 ’4095 ±104 ’4115 ±125 ’4125 ±135 dv/dt ≤±1000 V/µs, Linear voltage ramp, ’4145 ±156 Ramp breakover Maximum ramp value = ±500 V ’4165 ±177 voltage di/dt = ±20 A/µs, Linear current ramp, ’4180 ±192 Maximum ramp value = ±10 A ’4200 ±212 ’4219 ±231 ’4250 ±263 ’4290 ±303 ’4350 ±364 ‘4395 V(BO) Max TA = 25 °C Unit µA V V ±409 4070 ±96 ’4080 ±101 ’4095 ±112 ’4115 ±130 ’4125 ±140 ’4145 ±161 Impulse breakover 2/10 wave shape, I PP = ±1000 A, RS = 2.5 Ω, ’4165 ±183 voltage (see Note 3) ’4180 ±199 ’4200 ±221 ’4219 ±242 ’4250 ±276 ’4290 ±320 ’4350 ±386 ‘4395 ±434 V NOTE 3: Dynamic voltage measurements should be made with an oscilloscope with limited band width (20 MHz) to avoid high frequency noise. SEPTEMBER 2001 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP4xxxJ1BJ Overvoltage Protector Series Electrical Characteristics, TA = 25 °C (Unless Otherwise Noted) (Continued) Parameter I(BO) IH dv/dt ID Test Conditions Breakover current dv/dt = ±250 V/ms, Holding current IT = ±5 A, di/dt = +/-30 mA/ms Critical rate of rise of off-state voltage Off-state current VD = ±50 V f = 1 MHz, Off-state capacitance f = 1 MHz, f = 1 MHz, Typ R SOURCE = 300 Ω Linear voltage ramp, Maximum ramp value < 0.85 VDRM f = 1 MHz, Coff Min Vd = 1 V rms, VD = -1 V Vd = 1 V rms, VD = -2 V Vd = 1 V rms, VD = -50 V f = 1 MHz, Vd = 1 V rms, VD = -100 V (see Note 4) Unit ±600 mA ±20 mA ±5 kV/µs TA = 85 °C Vd = 1 V rms, VD = 0, Max ±10 µA ‘4070 thru ‘4115 195 235 ‘4125 thru ‘4219 120 145 ‘4250 thru ‘4395 105 125 ‘4070 thru ‘4115 180 215 ‘4125 thru ‘4219 110 132 ‘4250 thru ‘4395 95 115 ‘4070 thru ‘4115 165 200 ‘4125 thru ‘4219 100 120 ‘4250 thru ‘4395 90 105 ‘4070 thru ‘4115 85 100 ‘4125 thru ‘4219 50 60 ‘4250 thru ‘4395 42 50 ‘4125 thru ‘4219 40 50 ‘4250 thru ‘4395 35 40 Typ Max Unit 90 °C/W pF NOTE 4: To avoid possible voltage clipping, the ‘4125 is tested with VD = -98 V Thermal Characteristics Parameter R θJA Junction to free air thermal resistance Test Condit ions EIA/JESD51-3 PCB, IT = ITSM(1000), TA = 25 °C, (see Note 5) Min NOTE 5: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths. SEPTEMBER 2001 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP4xxxJ1BJ Overvoltage Protector Series Parameter Measurement Information +i Quadrant I IPPSM Switching Characteristic ITSM V(BO) I(BO) IH VDRM -v VD IDRM ID ID IDRM VD VDRM +v IH I(BO) V(BO) ITSM Quadrant III IPPSM Switching Characteristic -i Figure 1. Voltage-Current Characteristic for Terminals 1-2 All Measurements are Referenced to Terminal 2 SEPTEMBER 2001 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. PM4XAF TISP4xxxJ1BJ Overvoltage Protector Series Typical Characteristics OFF-STATE CURRENT vs JUNCTION TEMPERATURE TC4JAG 100 1.15 NORMALIZED BREAKOVER VOLTAGE vs JUNCTION TEMPERATURE TC4JAF VD = ±50 V Normalized Breakover Voltage |ID| - Off-State Current - µA 10 1 0·1 0·01 1.10 1.05 1.00 0.95 0.90 0·001 -25 0 25 50 75 100 TJ - Junction Temperature - °C 125 -25 150 Figure 2. 2.0 TC4JAA 150 NORMALIZED HOLDING CURRENT vs JUNCTION TEMPERATURE TC4JAD TA = 25 °C tW = 100 µs 1.5 Normalized Holding Current IT - On-State Current - A 200 150 125 Figure 3. ON-STATE CURRENT vs ON-STATE VOLTAGE 400 300 0 25 50 75 100 TJ - Junction Temperature - °C 100 70 50 40 30 20 15 10 7 5 4 3 1.0 0.9 0.8 0.7 0.6 0.5 2 1.5 1 0.7 0.4 1 1.5 2 3 4 5 7 VT - On-State Voltage - V Figure 4. 10 15 -25 0 25 50 75 100 TJ - Junction Temperature - °C 125 150 Figure 5. SEPTEMBER 2001 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP4xxxJ1BJ Overvoltage Protector Series Typical Characteristics DIFFERENTIAL OFF-STATE CAPACITANCE vs RATED REPETITIVE PEAK OFF-STATE VOLTAGE NORMALIZED CAPACITANCE vs OFF-STATE VOLTAGE TC4JABB 1 TC4JAE 90 0.9 Capacitance Normalized to VD = 0 0.7 C - Differential Off-State Capacitance - pF TJ = 25 °C Vd = 1 Vrms 0.8 0.6 0.5 0.4 0.3 0.2 0.5 1 2 3 5 10 20 30 VD - Off-state Voltage - V 50 80 70 60 50 40 50 100150 C = Coff(-2 V) - Coff(-50 V) 60 70 80 90 100 150 200 250 300 350 VDRM - Repetitive Peak Off-State Voltage - V Figure 6. Figure 7. NORMALIZED CAPACITANCE ASYMMETRY vs OFF-STATE VOLTAGE TC4JCC 2.5 Normalized Capacitance Asymmetry - % Vd = 10 mV rms, 1 MHz 2.0 1.5 1.0 Vd = 1 V rms, 1 MHz 0.5 0.0 0.5 0.7 1 2 3 4 5 7 10 20 VD — Of f -State Voltage — V Figure 8. SEPTEMBER 2001 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. 30 4050 TISP4xxxJ1BJ Overvoltage Protector Series Rating and Thermal Information VDRM DERATING FACTOR vs MINIMUM AMBIENT TEMPERATURE NON-REPETITIVE PEAK ON-STATE CURRENT vs CURRENT DURATION TI4JAA VGEN = 600 Vrms, 50/60 Hz RGEN = 1.4*VGEN /ITSM(t) EIA/JESD51-2 ENVIRONMENT EIA/JESD51-3 PCB TA = 25 °C 30 20 15 TI4JADC 1.00 0.99 0.98 Derating Factor ITSM(t) - Non-Repetitive Peak On-State Current - A 40 10 9 8 7 6 5 0.97 0.96 '4070 THRU '4115 '4125 THRU '4219 0.95 4 0.94 3 2 0·1 1 10 100 t - Current Duration - s Figure 9. 1000 '4250 THRU '4395 0.93 -40 -35 -30 -25 -20 -15 -10 -5 0 5 10 15 20 25 TAMIN - Minimum Ambient Temperature - °C Figure 10. SEPTEMBER 2001 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP4xxxJ1BJ Overvoltage Protector Series APPLICATIONS INFORMATION Y Configuration Design This protection configuration has three modes of protection. The RING to TIP terminal pair protection is given by the series combination of protectors Th1a and Th1b, see Figure 11. The terminal pair protection voltage will be the sum of the V(BO), breakover voltage, of Th1a and the V(BO) of Th1b. Protectors Th1a and Th1b are the same device type and the terminal pair protection voltage will be 2 V(BO)1. For a terminal pair protection voltage of ±400 V, Th1a and Th1b would have V (BO)1 = ±400/2 = ±200 V. Similarly for the other terminal pairs, RING to GROUND protection is given by the series combination of Th1b and Th2 and the terminal pair protection voltage is V(BO)1 + V(BO)2. TIP to GROUND protection voltage will also be V(BO)1 + V (BO)2. The maximum terminal pair voltage before clipping might occur is the sum of the protector VDRM, off-state voltages, see Figure 12. For RING to TIP this will be 2 VDRM1. The ±200 V V(BO)1 protectors of the previous example have a VDRM of ±155 V, giving a maximum non-clipping signal voltage of ±310 V. For RING to GROUND and TIP to GROUND terminal pairs, the maximum non-clipping signal voltage will be VDRM1 + V DRM2 . Under longitudinal surge conditions, when the prospective currents of the line conductors, IRING and ITIP, are equal, Th2, the ground return protector, carries the sum of the Th1a and Th1b currents, see Figure 13. The current rating of Th2 must be twice that of Th1a and Th1b. RING TIP 2 V(BO)1 Th1a Th1b V(BO)1 TIP V(BO)1 TIP 2 VDRM1 Th1a Th1b VDRM1 VDRM1 I V(BO)1 + V (BO)2 V(BO)1 + V(BO)2 V(BO)2 VDRM1 + VDRM2 Th2 VDRM2 AI4JAC Figure 11. Protection Voltage VDRM1 + VDRM2 Th2 ITIP IRING Th1a ITIP + I RING Th1b Th2 AI4JAA AI4JAB Figure 12. Off-State Voltage PROTECTED SIDE RING UNPROTECTED SIDE RING Figure 13. Current Flow GR-1089-CORE Designs The main impulse waveforms of the standard are 500 A, 2/10 and 100 A, 10/1000. Assuming fuse current limiters, F1a and F1b, a suitable Th1a and Th1b protector for these conductor currents is the TISP4xxxH3BJ series of devices. The ground return protector, Th2, must be rated for at least 1000 A,2/10 and 200 A, 10/1000. A suitable Th2 protector for these ground currents is the TISP4xxxJ1BJ series of devices. This arrangement is shown in Figure 14 and the following table lists all the catalogue device combinations. RING to TIP Voltages RING to GROUND, TIP to GROUND Voltages GR-1089-CORE Y Configuration Parts and Part Voltages VDRM V(BO) VDRM V(BO) Th1a, Th1b Th2 VDRM V V V V Part # Part # V V ±116 ±140 ±116 ±140 TISP4070H3BJ TISP4070J1BJ ±58 ±70 V(BO) ±130 ±160 ±130 ±160 TISP4080H3BJ TISP4080J1BJ ±65 ±80 ±150 ±190 ±150 ±190 TISP4095H3BJ TISP4095J1BJ ±75 ±95 ±115 ±180 ±230 ±180 ±230 TISP4115H3BJ TISP4115J1BJ ±90 ±200 ±250 ±200 ±250 TISP4125H3BJ TISP4125J1BJ ±100 ±125 ±240 ±290 ±240 ±290 TISP4145H3BJ TISP4145J1BJ ±120 ±145 ±270 ±330 ±270 ±330 TISP4165H3BJ TISP4165J1BJ ±135 ±165 ±290 ±360 ±290 ±360 TISP4180H3BJ TISP4180J1BJ ±145 ±180 ±310 ±400 ±310 ±400 TISP4200H3BJ TISP4200J1BJ ±155 ±200 ±360 ±438 ±360 ±438 TISP4219H3BJ TISP4219J1BJ ±180 ±219 SEPTEMBER 2001 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP4xxxJ1BJ Overvoltage Protector Series GR-1089-CORE Designs (Continued) RING to TIP Voltages RING to GROUND, TIP to GROUND Voltages GR-1089-CORE Y Configuration Parts and Part Voltages VDRM V(BO) VDRM V(BO) Th1a, Th1b Th2 VDRM V V V V Part # Part # V V ±380 ±500 ±380 ±500 TISP4250H3BJ TISP4250J1BJ ±190 ±250 V(BO) ±440 ±580 ±440 ±580 TISP4290H3BJ TISP4290J1BJ ±220 ±290 ±550 ±700 ±550 ±700 TISP4350H3BJ TISP4350J1BJ ±275 ±350 ±640 ±790 ±640 ±790 TISP4395H3BJ TISP4395J1BJ ±320 ±395 RING TIP F1b RING TIP F1a Th1a TISP4xxxH3BJ R1b R1a Th1a + Th1b TISP4xxxT3BJ Th1b TISP4xxxH3BJ Th2 TISP4xxxJ1BJ Th2 TISP4xxxJ1BJ AI4JAE AI4JAD Figure 14. GR-1089-CORE Design Figure 15. Coordinated ITU-T K Recommendation Design ITU-T K.20, K.45 and K.21 Designs The main impulse voltage wave shape of these recommendations is 10/700. The current wave shape is loading dependent, but it is 5/310 into a short circuit. To coordinate with a ±400 V primary protector a minimum series resistance of 6.5 Ω is required (“The New ITU-T Telecommunication Equipment Resistibility Recommendations”, Compliance Engineering Magazine, January-February 2002). The coordination resistance limits the peak non-truncated current to ±400/6.5 = 62 A. A suitable Th1a and Th1b protector for these conductor currents is the TISP3xxxT3BJ series of devices, which combine Th1a and Th1b in a single SMB3 package. The ground return protector, Th2, must be rated for at least 124 A of a 5/310 waveshape. Suitable Th2 protectors for these ground currents are the TISP4xxxH3BJ or TISP4xxxJ1BJ series of devices. The arrangement is shown in Figure 15 and the following table lists all the catalogue device combinations. Using the SMB3 packaged TISP3xxxT3BJ saves one third of the PCB placement area compared to solution using three single protector SMB packaged devices. RING to TIP Voltages RING to GROUND, ITU-T Y Configuration Parts and Part Voltages TIP to GROUND Voltages R1a = R1b = 6.5 Ω VDRM V(BO) VDRM V(BO) Th1a + Th1b Th2 VDRM V V V V Part # Part # V V ±116 ±140 ±116 ±140 TISP3070T3BJ TISP4070J1BJ ±58 ±70 V(BO) ±130 ±160 ±130 ±160 TISP3080T3BJ TISP4080J1BJ ±65 ±80 ±150 ±190 ±150 ±190 TISP3095T3BJ TISP4095J1BJ ±75 ±95 ±180 ±230 ±180 ±230 TISP3115T3BJ TISP4115J1BJ ±90 ±115 ±200 ±250 ±200 ±250 TISP3125T3BJ TISP4125J1BJ ±100 ±125 ±240 ±290 ±240 ±290 TISP3145T3BJ TISP4145J1BJ ±120 ±145 ±270 ±330 ±270 ±330 TISP3165T3BJ TISP4165J1BJ ±135 ±165 ±290 ±360 ±290 ±360 TISP3180T3BJ TISP4180J1BJ ±145 ±180 ±310 ±400 ±310 ±400 TISP3200T3BJ TISP4200J1BJ ±155 ±200 ±360 ±438 ±360 ±438 TISP3219T3BJ TISP4219J1BJ ±180 ±219 ±380 ±500 ±380 ±500 TISP3250T3BJ TISP4250J1BJ ±190 ±250 ±440 ±580 ±440 ±580 TISP3290T3BJ TISP4290J1BJ ±220 ±290 SEPTEMBER 2001 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP4xxxJ1BJ Overvoltage Protector Series ITU-T K.20, K.45 and K.21 Designs (Continued) RING to GROUND, RING to TIP Voltages ITU-T Y Configuration Parts and Part Voltages TIP to GROUND Voltages R1a = R1b = 6.5 Ω VDRM V(BO) VDRM V(BO) Th1a + Th1b Th2 VDRM V V V V Part # Part # V V ±550 ±700 ±550 ±700 TISP3350T3BJ TISP4350J1BJ ±275 ±350 ±640 ±790 ±640 ±790 TISP3395T3BJ TISP4395J1BJ ±320 ±395 V(BO) Asymmetrical Designs These designs are for special needs, where the RING to TIP protection voltage must be different to the RING to GROUND and TIP to GROUND voltages. ADSL modem interfaces often have a need for asymmetric voltage limiting, see Figure 16. Here, the RING to TIP voltage limitation is given by the d.c. blocking capacitor, C1, and the RING to GROUND and TIP to GROUND limitation is insulation breakdown. Often the breakdown limit is set by the spacing of the PW (Printed Wiring) tracks. Figure 17 shows a solution. Using two ±165 V V(BO) parts for Th1a and Th1b, the RING to TIP voltage is limited to ±330 V. Using a higher voltage ±350 V V(BO) part for Th2 limits the insulation stress to ±515 V. Figure 17 and its following table is for a GR-1089-CORE compliant design. RING to GROUND, RING to TIP Voltages TIP to GROUND Voltages GR-1089-CORE Y Configuration Parts and Part Voltages Th1a, Th1b VDRM V(BO) VDRM V(BO) V V V V Part # ±270 ±330 ±410 ±515 TISP4165H3BJ Th2 VDRM V(BO) V V ±135 ±165 Part # TISP4350J1BJ VDRM V ±275 V(BO) V ±350 T1 TIP RING C1 Voltage Limit TIP C1 F1b F1a Th1a TISP4165H3BJ Th1b TISP4165H3BJ RING T1 or PW Insulation Breakdown Th2 TISP4350J1BJ AI4JAH Figure 16. ADSL Modem Interface Voltage Limitations Figure 17. Asymmetrical Design for US ADSL Modems An ITU-T compliant design would probably require the replacement of the fuses by coordination resistors. With a ±410 V off-state voltage, this may seem unnecessary as modern primary protectors will switch at lower voltages and automatically coordinate. On a perfect longitudinal waveform this is true. However, the ITU-T also applies a transverse (metallic) test as well, to simulate non-simultaneous switching of the primary protection. In this case, one conductor is grounded, which places the RING to TIP protection in parallel with the unswitched primary protector. The ±270 V off-state voltage is likely to be lower than the primary switching voltage and there isn’t coordination. Under GR-1089CORE conditions with non-simultaneous switching, the 100 A 10/1000 current, which should have gone through the unswitched primary protector, is diverted through the top arms of the Y into the switched primary, causing a 200 A current flow in that primary protector. SEPTEMBER 2001 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP4xxxJ1BJ Overvoltage Protector Series MECHANICAL DATA Recommended Printed Wiring Land Pattern Dimensions 2.54 (.100) SMB Land Pattern 2.40 (.095) DIMENSIONS ARE: 2.16 (.085) MILLIMETERS (INCHES) MDXX BID Device Symbolization Code Devices will be coded as below. As the device parameters are symmetrical, terminal 1 is not identified. Device Symbolization Code TISP4070J1 4070J1 TISP4080J1 4080J1 TISP4095J1 4095J1 TISP4115J1 4115J1 TISP4125J1 4125J1 TISP4145J1 4145J1 TISP4165J1 4165J1 TISP4180J1 4180J1 TISP4200J1 4200J1 TISP4219J1 4219J1 TISP4250J1 4250J1 TISP4290J1 4290J1 TISP4350J1 4350J1 TISP4395J1 4395J1 Carrier Information For production quantities, the carrier will be embossed tape reel pack. Evaluation quantities may be shipped in bulk pack or embossed tape. Package Carrier SMB Embossed Tape Reel Pack Standard Quantity 3 000 SEPTEMBER 2001 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP4xxxJ1BJ Overvoltage Protector Series MECHANICAL DATA SMB (DO-214AA) Plastic Surface Mount Diode Package This surface mount package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. SMB02 4.06 - 4.57 (.160 - .180) 3. 30 - 3. 94 (.130 - .155) 1 2 Index Mark (if needed) 2. 00 - 2.40 (.079 - .094) 1. 90 - 2.10 (.075 - .083) 0. 76 - 1.52 (.030 - .060) 0. 10 - 0. 20 (.004 - .008) 1. 96 - 2. 32 (.077 - .091) 5. 21 - 5.59 (.205 - .220) DIMENSIONS ARE: MILLIMETERS (INCHES) MDXXBHG SEPTEMBER 2001 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP4xxxJ1BJ Overvoltage Protector Series MECHANICAL DATA Tape Dimensions SMB02 Package Single-Sprocket Tape 3. 90 - 4.10 (.154 - .161 ) ø 1. 95 - 2.05 (.077 - .081) 1. 50 MIN . (.059) 1. 55 - 1.65 ø (.061 - .065 ) 0. 40 MAX . (.016) 1. 65 - 1.85 (.065 - .073 ) 5. 45 - 5.55 (.215 - .219 ) 11.70 - 12.30 (.461 - .484 ) 8. 20 MAX . (.323) e 0 MIN . 7. 90 - 8.10 (.311 - .319 ) Direction of Feed Cover Tape Carrier Tape Embossment 20 ° 4. 50 MAX . (.177) Maximium component rotation Typical component cavity center line DIMENSIONS ARE: Typical component center line MILLIMETERS (INCHES) NOTES: A. The clearance between the component and the cavity must be within 0.05 mm (.002 in) MIN. to 0.65 mm (.026 in) MAX. so that the component cannot rotate more than 20 ° within the determined cavity. MDXXBHH B. Taped devices are supplied on a reel of the following dimensions:Reel diameter: 330 mm ± 3.0 mm (12.99 in ± .118 in) Reel hub diameter 75 mm (2.95 in) MIN. Reel axial hole: 13.0 mm ± 0.5 mm (.512 in ± .020 in) C. 3 000 devices are on a reel. “TISP” is a trademark of Bourns, Ltd., a Bourns Company, and is Registered in U.S. Patent and Trademark Office. “Bourns” is a registered trademark of Bourns, Inc. in the U.S. and other countries. SEPTEMBER 2001 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.