TI TLC271ID

TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
D
D
D
D
D
D
D
D
OFFSET N1
IN –
IN +
GND
1
8
2
7
3
6
4
5
BIAS SELECT
VDD
OUT
OFFSET N2
FK PACKAGE
(TOP VIEW)
NC
OFFSET N1
NC
BIAS SELECT
NC
D
D, JG, OR P PACKAGE
(TOP VIEW)
Input Offset Voltage Drift . . . Typically
0.1 µV/Month, Including the First 30 Days
Wide Range of Supply Voltages Over
Specified Temperature Range:
0°C to 70°C . . . 3 V to 16 V
– 40°C to 85°C . . . 4 V to 16 V
– 55°C to 125°C . . . 5 V to 16 V
Single-Supply Operation
Common-Mode Input Voltage Range
Extends Below the Negative Rail (C-Suffix
and I-Suffix Types)
Low Noise . . . 25 nV/√Hz Typically at
f = 1 kHz (High-Bias Mode)
Output Voltage Range Includes Negative
Rail
High Input Impedance . . . 1012 Ω Typ
ESD-Protection Circuitry
Small-Outline Package Option Also
Available in Tape and Reel
Designed-In Latch-Up Immunity
NC
IN –
NC
IN +
NC
4
3 2 1 20 19
18
5
17
6
16
7
15
8
14
9 10 11 12 13
NC
VDD
NC
OUT
NC
NC
GND
NC
OFFSET N2
NC
D
description
The TLC271 operational amplifier combines a
wide range of input offset voltage grades with low
NC – No internal connection
offset voltage drift and high input impedance. In
addition, the TLC271 offers a bias-select mode
that allows the user to select the best combination of power dissipation and ac performance for a particular
application. These devices use Texas Instruments silicon-gate LinCMOS technology, which provides offset
voltage stability far exceeding the stability available with conventional metal-gate processes.
AVAILABLE OPTIONS
TA
VIOmax
AT 25°C
0°C to 70°C
2 mV
5 mV
10 mV
– 40°C to 85°C
– 55°C to 125°C
PACKAGE
SMALL OUTLINE
(D)
CHIP CARRIER
(FK)
CERAMIC DIP
(JG)
PLASTIC DIP
(P)
TLC271BCD
TLC271ACD
TLC271CD
—
—
TLC271BCP
TLC271ACP
TLC271CP
2 mV
5 mV
10 mV
TLC271BID
TLC271AID
TLC271ID
—
—
TLC271BIP
TLC271AIP
TLC271IP
10 mV
TLC271MD
TLC271MFK
TLC271MJG
TLC271MP
The D package is available taped and reeled. Add R suffix to the device type (e.g., TLC271BCDR).
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
LinCMOS is a trademark of Texas Instruments.
Copyright  2001, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
1
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
DEVICE FEATURES
BIAS-SELECT MODE
PARAMETER†
MEDIUM
PD
SR
3375
525
50
3.6
0.4
0.03
Vn
B1
25
32
68
0.5
0.09
MHz
170
480
V/mV
1.7
AVD
23
† Typical at VDD = 5 V, TA = 25°C
LOW
UNIT
HIGH
µW
V/µs
nV/√Hz
description (continued)
Using the bias-select option, these cost-effective devices can be programmed to span a wide range of
applications that previously required BiFET, NFET, or bipolar technology. Three offset voltage grades are
available (C-suffix and I-suffix types), ranging from the low-cost TLC271 (10 mV) to the TLC271B (2 mV)
low-offset version. The extremely high input impedance and low bias currents, in conjunction with good
common-mode rejection and supply voltage rejection, make these devices a good choice for new
state-of-the-art designs as well as for upgrading existing designs.
In general, many features associated with bipolar technology are available in LinCMOS operational amplifiers,
without the power penalties of bipolar technology. General applications such as transducer interfacing, analog
calculations, amplifier blocks, active filters, and signal buffering are all easily designed with the TLC271. The
devices also exhibit low-voltage single-supply operation, making them ideally suited for remote and
inaccessible battery-powered applications. The common-mode input voltage range includes the negative rail.
A wide range of packaging options is available, including small-outline and chip-carrier versions for high-density
system applications.
The device inputs and output are designed to withstand – 100-mA surge currents without sustaining latch-up.
The TLC271 incorporates internal ESD-protection circuits that prevent functional failures at voltages up to 2000
V as tested under MIL-STD-883C, Method 3015.2; however, care should be exercised in handling these devices
as exposure to ESD may result in the degradation of the device parametric performance.
The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized
for operation from – 40°C to 85°C. The M-suffix devices are characterized for operation over the full military
temperature range of – 55°C to 125°C.
bias-select feature
The TLC271 offers a bias-select feature that allows the user to select any one of three bias levels depending
on the level of performance desired. The tradeoffs between bias levels involve ac performance and power
dissipation (see Table 1).
Table 1. Effect of Bias Selection on Performance
TYPICAL PARAMETER VALUES
C, VDD = 5 V
TA = 25
25°C,
MODE
HIGH BIAS
RL = 10 kΩ
MEDIUM BIAS
RL = 100 kΩ
LOW BIAS
RL = 1 MΩ
UNIT
PD
SR
Power dissipation
3.4
0.5
0.05
mW
Slew rate
3.6
0.4
0.03
V/µs
Vn
B1
Equivalent input noise voltage at f = 1 kHz
25
32
68
Unity-gain bandwidth
1.7
0.5
0.09
φm
AVD
Phase margin
46°
40°
34°
23
170
480
2
Large-signal differential voltage amplification
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
nV/√Hz
MHz
V/mV
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
bias selection
Bias selection is achieved by connecting the bias select pin to one of three voltage levels (see Figure 1). For
medium-bias applications, it is recommended that the bias select pin be connected to the midpoint between the
supply rails. This procedure is simple in split-supply applications, since this point is ground. In single-supply
applications, the medium-bias mode necessitates using a voltage divider as indicated in Figure 1. The use of
large-value resistors in the voltage divider reduces the current drain of the divider from the supply line. However,
large-value resistors used in conjunction with a large-value capacitor require significant time to charge up to
the supply midpoint after the supply is switched on. A voltage other than the midpoint can be used if it is within
the voltages specified in Figure 1.
VDD
Low
To the Bias
Select Pin
1 MΩ
BIAS MODE
Medium
Medium
VDD
1 V to VDD – 1 V
High
GND
Low
High
1 MΩ
BIAS-SELECT VOLTAGE
(single supply)
0.01 µF
Figure 1. Bias Selection for Single-Supply Applications
high-bias mode
In the high-bias mode, the TLC271 series features low offset voltage drift, high input impedance, and low noise.
Speed in this mode approaches that of BiFET devices but at only a fraction of the power dissipation. Unity-gain
bandwidth is typically greater than 1 MHz.
medium-bias mode
The TLC271 in the medium-bias mode features low offset voltage drift, high input impedance, and low noise.
Speed in this mode is similar to general-purpose bipolar devices but power dissipation is only a fraction of that
consumed by bipolar devices.
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
3
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
low-bias mode
In the low-bias mode, the TLC271 features low offset voltage drift, high input impedance, extremely low power
consumption, and high differential voltage gain.
ORDER OF CONTENTS
TOPIC
BIAS MODE
schematic
all
absolute maximum ratings
all
recommended operating conditions
all
electrical characteristics
operating characteristics
typical characteristics
high
(Figures 2 – 33)
electrical characteristics
operating characteristics
typical characteristics
medium
(Figures 34 – 65)
electrical characteristics
operating characteristics
typical characteristics
low
(Figures 66 – 97)
parameter measurement information
all
application information
all
equivalent schematic
VDD
P3
P12
P9A
R6
P4
P2
P1
P5
P9B
P11
R2
IN –
R1
P10
N5
IN +
N11
P6A
C1
R5
P6B
P7B
P7A
P8
N12
N3
N9
N6
N7
N1
N2
N4
R3
D1
D2
N13
R7
R4
OFFSET OFFSET
N1
N2
4
N10
OUT
POST OFFICE BOX 655303
GND
• DALLAS, TEXAS 75265
BIAS
SELECT
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
absolute maximum ratings over operating free-air temperature (unless otherwise noted)†
Supply voltage, VDD (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 V
Differential input voltage, VID (see Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± VDD
Input voltage range, VI (any input) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 0.3 V to VDD
Input current, II . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 5 mA
Output current, IO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 30 mA
Duration of short-circuit current at (or below) 25°C (see Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Unlimited
Continuous total dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Dissipation Rating Table
Operating free-air temperature, TA: C suffix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0°C to 70°C
I suffix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 40°C to 85°C
M suffix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 55°C to 125°C
Storage temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 65°C to 150°C
Case temperature for 60 seconds: FK package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds: D or P package . . . . . . . . . . . . . . . . . 260°C
Lead temperature 1,6 mm (1/16 inch) from case for 60 seconds: JG package . . . . . . . . . . . . . . . . . . . . 300°C
† Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTES: 1. All voltage values, except differential voltages, are with respect to network ground.
2. Differential voltages are at IN+ with respect to IN –.
3. The output may be shorted to either supply. Temperature and/or supply voltages must be limited to ensure that the maximum
dissipation rating is not exceeded (see application section).
DISSIPATION RATING TABLE
PACKAGE
TA ≤ 25°C
POWER RATING
DERATING FACTOR
ABOVE TA = 25°C
TA = 70°C
POWER RATING
TA = 85°C
POWER RATING
TA = 125°C
POWER RATING
D
725 mW
5.8 mW/°C
464 mW
377 mW
145 mW
FK
1375 mW
11.0 mW/°C
880 mW
715 mW
275 mW
JG
1050 mW
8.4 mW/°C
672 mW
546 mW
210 mW
P
1000 mW
8.0 mW/°C
640 mW
520 mW
200 mW
recommended operating conditions
Supply voltage, VDD
Common mode input voltage,
Common-mode
voltage VIC
VDD = 5 V
VDD = 10 V
Operating free-air temperature, TA
POST OFFICE BOX 655303
C SUFFIX
I SUFFIX
M SUFFIX
MIN
MIN
MAX
MIN
MAX
MAX
3
16
4
16
5
16
– 0.2
3.5
– 0.2
3.5
0
3.5
– 0.2
8.5
– 0.2
8.5
0
8.5
0
70
– 40
85
– 55
125
• DALLAS, TEXAS 75265
UNIT
V
V
°C
5
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
HIGH-BIAS MODE
electrical characteristics at specified free-air temperature (unless otherwise noted)
TLC271C, TLC271AC, TLC271BC
TEST
CONDITIONS
PARAMETER
TLC271C
VIO
Input offset voltage
TLC271AC
VO = 1
1.4
4V
V,
VIC = 0 V,,
RS = 50 Ω,
RL = 10 kΩ
TLC271BC
TA†
VDD = 5 V
MIN
TYP
MAX
VDD = 10 V
MIN
TYP
MAX
25°C
1.1
1.1
Full range
10
12
25°C
0.9
Full range
0.34
Full range
5
0.9
2
0.39
3
αVIO
IIO
Input offset current (see Note 4)
VO = VDD /2,,
VIC = VDD /2
25°C
0.1
60
0.1
60
70°C
7
300
7
300
IIB
Input bias current (see Note 4)
VO = VDD /2,,
VIC = VDD /2
25°C
0.6
60
0.7
60
70°C
40
600
50
600
VOH
VOL
AVD
CMRR
kSVR
II(SEL)
IDD
Common mode input voltage
Common-mode
range (see Note 5)
High-level output voltage
Low-level output voltage
L
i
l diff
ti l
Large-signal
differential
voltage am
lification
amplification
Common-mode rejection ratio
25°C
– 0.2
to
4
Full range
– 0.2
to
3.5
VID = 100 mV,
V
RL = 10 kΩ
VID = –100
100 mV,
V
IOL = 0
kΩ
RL = 10 kΩ,
See Note 6
VIC = VICRmin
– 0.2
to
9
– 0.3
to
9.2
25°C
3.2
3.8
8
8.5
0°C
3
3.8
7.8
8.5
70°C
3
3.8
7.8
8.4
V
25°C
0
50
0
50
0°C
0
50
0
50
70°C
0
50
0
50
25°C
5
23
10
36
0°C
4
27
7.5
42
70°C
4
20
7.5
32
25°C
65
80
65
85
0°C
60
84
60
88
70°C
60
85
60
88
25°C
65
95
65
95
0°C
60
94
60
94
70°C
60
96
60
96
dB
Input current (BIAS SELECT)
VI(SEL) = 0
25°C
– 1.4
VO = VDD /2,
VIC = VDD /2,
N lload
No
d
25°C
675
1600
950
2000
0°C
775
1800
1125
2200
70°C
575
1300
750
1700
• DALLAS, TEXAS 75265
mV
V/mV
VDD = 5 V to
t 10 V
VO = 1
1.4
4V
POST OFFICE BOX 655303
pA
V
Supply-voltage
S
l
lt
rejection
j ti ratio
ti
(∆VDD /∆VIO)
Supply current
pA
V
– 0.2
to
8.5
dB
µA
– 1.9
† Full range is 0°C to 70°C.
NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically.
5. This range also applies to each input individually.
6. At VDD = 5 V, VO = 0.25 V to 2 V; at VDD = 10 V, VO = 1 V to 6 V.
6
µV/°C
2
– 0.3
to
4.2
mV
2
Average temperature coefficient
of input offset voltage
VICR
1.8
5
6.5
3
25°C to
70°C
10
12
6.5
25°C
UNIT
µA
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
HIGH-BIAS MODE
electrical characteristics at specified free-air temperature (unless otherwise noted)
TLC271I, TLC271AI, TLC271BI
TEST
CONDITIONS
PARAMETER
TLC271I
VIO
Input offset voltage
TLC271AI
VO = 1
1.4
4V
V,
VIC = 0 V,,
RS = 50 Ω,
RL = 10 kΩ
TLC271BI
TA†
VDD = 5 V
MIN
TYP
MAX
VDD = 10 V
MIN
TYP
MAX
25°C
1.1
1.1
Full range
10
13
25°C
0.9
Full range
0.34
Full range
5
0.9
2
0.39
3.5
αVIO
IIO
Input offset current (see Note 4)
VO = VDD /2,,
VIC = VDD /2
25°C
0.1
60
0.1
60
85°C
24
1000
26
1000
IIB
Input bias current (see Note 4)
VO = VDD /2,,
VIC = VDD /2
25°C
0.6
60
0.7
60
85°C
200
2000
220
2000
VOH
VOL
AVD
CMRR
kSVR
II(SEL)
IDD
25°C
– 0.2
to
4
Full range
– 0.2
to
3.5
Common-mode input
voltage range (see Note 5)
High-level output voltage
Low-level output voltage
L
i
l diff
ti l
Large-signal
differential
voltage am
lification
amplification
Common-mode rejection ratio
VID = 100 mV,
V
RL = 10 kΩ
VID = –100
100 mV,
V
IOL = 0
kΩ
RL = 10 kΩ,
See Note 6
VIC = VICRmin
µV/°C
2
– 0.3
to
4.2
– 0.2
to
9
– 0.3
to
9.2
pA
pA
V
– 0.2
to
8.5
V
25°C
3.2
3.8
8
8.5
– 40°C
3
3.8
7.8
8.5
85°C
3
3.8
7.8
8.5
V
25°C
0
50
0
50
– 40°C
0
50
0
50
85°C
0
50
0
50
25°C
5
23
10
36
– 40°C
3.5
32
7
46
85°C
3.5
19
7
31
25°C
65
80
65
85
– 40°C
60
81
60
87
85°C
60
86
60
88
25°C
65
95
65
95
– 40°C
60
92
60
92
85°C
60
96
60
96
mV
V/mV
dB
Supply-voltage
S
l
lt
rejection
j ti ratio
ti
(∆VDD /∆VIO)
VDD = 5 V to
t 10 V
VO = 1
1.4
4V
Input current (BIAS SELECT)
VI(SEL) = 0
25°C
– 1.4
VO = VDD /2,
VIC = VDD /2,
N lload
No
d
25°C
675
1600
950
2000
– 40°C
950
2200
1375
2500
85°C
525
1200
725
1600
Supply current
mV
2
Average temperature coefficient
of input offset voltage
VICR
1.8
5
7
3.5
25°C to
85°C
10
13
7
25°C
UNIT
dB
µA
– 1.9
µA
† Full range is – 40°C to 85°C.
NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically.
5. This range also applies to each input individually.
6. At VDD = 5 V, VO = 0.25 V to 2 V; at VDD = 10 V, VO = 1 V to 6 V.
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
7
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
HIGH-BIAS MODE
electrical characteristics at specified free-air temperature (unless otherwise noted)
TLC271M
PARAMETER
VIO
Input offset voltage
αVIO
Average temperature coefficient
of input offset voltage
IIO
Input offset current (see Note 4)
IIB
VICR
VOH
VOL
AVD
CMRR
Input bias current (see Note 4)
TEST
CONDITIONS
VO = 1.4 V,
VIC = 0 V,,
RS = 50 Ω,
RL = 10 kΩ
TA†
VDD = 5 V
MIN
TYP
MAX
VDD = 10 V
MIN
TYP
MAX
25°C
11
1.1
11
1.1
Low-level output voltage
L
i
l diff
ti l
Large-signal
differential
voltage am
lification
amplification
Common-mode rejection ratio
10
mV
Full range
VO = VDD /2,,
VIC = VDD /2
VO = VDD /2,,
VIC = VDD /2
12
12
25°C to
125°C
2.1
25°C
0.1
60
0.1
60
pA
125°C
1.4
15
1.8
15
nA
25°C
0.6
60
0.7
60
pA
9
35
10
35
nA
125°C
25°C
0
to
4
Full range
0
to
3.5
Common-mode input voltage
g
range (see Note 5)
High-level output voltage
10
µV/°C
2.2
– 0.3
to
4.2
0
to
9
– 0.3
to
9.2
V
0
to
8.5
V
25°C
3.2
3.8
8
8.5
VID = 100 mV,
V
RL = 10 kΩ
– 55°C
3
3.8
7.8
8.5
125°C
3
3.8
7.8
8.4
25°C
0
50
0
50
VID = –100
100 mV,
V
IOL = 0
– 55°C
0
50
0
50
125°C
0
50
0
50
25°C
5
23
10
36
kΩ
RL = 10 kΩ,
See Note 6
– 55°C
3.5
35
7
50
125°C
3.5
16
7
27
25°C
65
80
65
85
– 55°C
60
81
60
87
125°C
60
84
60
86
25°C
65
95
65
95
– 55°C
60
90
60
90
125°C
60
97
60
VIC = VICRmin
kSVR
Supply-voltage
S
l
lt
rejection
j ti ratio
ti
(∆VDD /∆VIO)
VDD = 5 V to
t 10 V
VO = 1
1.4
4V
II(SEL)
Input current (BIAS SELECT)
VI(SEL) = 0
IDD
Supply current
VO = VDD /2,
VIC = VDD /2,
N lload
No
d
25°C
– 1.4
V
dB
dB
97
µA
– 1.9
25°C
675
1600
950
2000
1000
2500
1475
3000
125°C
475
1100
625
† Full range is – 55°C to 125°C.
NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically.
5. This range also applies to each input individually.
6. At VDD = 5 V, VO = 0.25 V to 2 V; at VDD = 10 V, VO = 1 V to 6 V.
1400
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
mV
V/mV
– 55°C
8
UNIT
µA
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
HIGH-BIAS MODE
operating characteristics at specified free-air temperature, VDD = 5 V
PARAMETER
TEST CONDITIONS
TA
TLC271C, TLC271AC,
TLC271BC
MIN
VI(PP)
( )=1V
SR
Slew rate at unity gain
RL = 10 kΩ,
CL = 20 pF
pF,
See Figure 98
VI(PP)
( ) = 2.5 V
Vn
Equivalent input noise voltage
f = 1 kHz,,
See Figure 99
RS = 20 Ω,,
BOM
Maximum output-swing bandwidth
VO = VOH ,
RL = 10 kΩ,
kΩ
CL = 20 pF,
F
See Figure 98
VI = 10 mV,
V
See Figure 100
CL = 20 pF,
F
B1
φm
Unity-gain bandwidth
Phase margin
VI = 10 mV,
mV
CL = 20 pF,
F,
f = B1,
See Figure 100
TYP
25°C
3.6
0°C
4
70°C
3
25°C
2.9
0°C
3.1
70°C
2.5
25°C
25
25°C
320
0°C
340
70°C
260
25°C
1.7
0°C
2
70°C
1.3
25°C
46°
0°C
47°
70°C
44°
UNIT
MAX
V/µs
nV/√Hz
kHz
MHz
operating characteristics at specified free-air temperature, VDD = 10 V
PARAMETER
TEST CONDITIONS
TA
TLC271C, TLC271AC,
TLC271BC
MIN
VI(PP)
( )=1V
SR
Slew rate at unity gain
RL = 10 kΩ,
CL = 20 pF
pF,
See Figure 98
VI(PP)
( ) = 5.5 V
Vn
Equivalent input noise voltage
f = 1 kHz,,
See Figure 99
RS = 20 Ω,,
BOM
Maximum output-swing bandwidth
VO = VOH,
RL = 10 kΩ,
kΩ
CL = 20 pF,
F
See Figure 98
VI = 10 mV,
V
See Figure 100
CL = 20 pF,
F
B1
φm
Unity-gain bandwidth
Phase margin
f = B1,
CL = 20 pF,
F,
POST OFFICE BOX 655303
VI = 10 mV,
mV
See Figure 100
• DALLAS, TEXAS 75265
TYP
25°C
5.3
0°C
5.9
70°C
4.3
25°C
4.6
0°C
5.1
70°C
3.8
25°C
25
25°C
200
0°C
220
70°C
140
25°C
2.2
0°C
2.5
70°C
1.8
25°C
49°
0°C
50°
70°C
46°
UNIT
MAX
V/µs
nV/√Hz
kHz
MHz
9
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
HIGH-BIAS MODE
operating characteristics at specified free-air temperature, VDD = 5 V
PARAMETER
TEST CONDITIONS
TA
TLC271I, TLC271AI,
TLC271BI
MIN
VI(PP)
( )=1V
SR
Slew rate at unity gain
RL = 10 kΩ,
CL = 20 pF,
pF
See Figure 98
VI(PP)
( ) = 2.5 V
Vn
Equivalent input noise voltage
f = 1 kHz,,
See Figure 99
RS = 20 Ω,,
BOM
Maximum output-swing bandwidth
VO = VOH,
RL = 10 kΩ,
kΩ
CL = 20 pF,
F
See Figure 98
VI = 10 mV,
V
See Figure 100
CL = 20 pF,
F
B1
φm
Unity-gain bandwidth
Phase margin
VI = 10 mV,
mV
CL = 20 pF
F,
f = B1,
See Figure 100
TYP
25°C
3.6
– 40°C
4.5
85°C
2.8
25°C
2.9
– 40°C
3.5
85°C
2.3
25°C
25
25°C
320
– 40°C
380
85°C
250
25°C
1.7
– 40°C
2.6
85°C
1.2
25°C
46°
– 40°C
49°
85°C
43°
UNIT
MAX
V/µs
nV/√H
nV/√Hz
kHz
MHz
operating characteristics at specified free-air temperature, VDD = 10 V
PARAMETER
TEST CONDITIONS
TA
TLC271I, TLC271AI,
TLC271BI
MIN
VI(PP)
( )=1V
SR
Slew rate at unity gain
RL = 10 kΩ,
CL = 20 pF,
pF
See Figure 98
VI(PP)
( ) = 5.5 V
Vn
Equivalent input noise voltage
f = 1 kHz,,
See Figure 99
RS = 20 Ω,,
BOM
Maximum output-swing bandwidth
VO = VOH,
RL = 10 kΩ,
kΩ
CL = 20 pF,
F
See Figure 98
B1
φm
10
Unity-gain bandwidth
Phase margin
VI = 10 mV,
V
See Figure 100
VI = 10 mV,
mV
CL = 20 pF
F,
POST OFFICE BOX 655303
CL = 20 pF,
F
ff= B1,
See Figure 100
• DALLAS, TEXAS 75265
TYP
25°C
5.3
– 40°C
6.8
85°C
4
25°C
4.6
– 40°C
5.8
85°C
3.5
25°C
25
25°C
200
– 40°C
260
85°C
130
25°C
2.2
– 40°C
3.1
85°C
1.7
25°C
49°
– 40°C
52°
85°C
46°
UNIT
MAX
V/µs
nV/√Hz
kHz
MHz
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
HIGH-BIAS MODE
operating characteristics at specified free-air temperature, VDD = 5 V
PARAMETER
TEST CONDITIONS
VI(PP)
( )=1V
SR
Slew rate at unity gain
RL = 10 kΩ,
CL = 20 pF
pF,
See Figure 98
VI(PP)
( ) = 2.5 V
Vn
Equivalent input noise voltage
f = 1 kHz,,
See Figure 99
RS = 20 Ω,,
BOM
Maximum output-swing bandwidth
VO = VOH,
RL = 10 kΩ,
kΩ
CL = 20 pF,
F
See Figure 98
B1
φm
Unity-gain bandwidth
Phase margin
VI = 10 mV,
V
See Figure 100
mV
VI = 10 mV,
CL = 20 pF,
F,
CL = 20 pF,
F
f = B1,
See Figure 100
TA
TLC271M
MIN
TYP
25°C
3.6
– 55°C
4.7
125°C
2.3
25°C
2.9
– 55°C
3.7
125°C
2
25°C
25
25°C
320
– 55°C
400
125°C
230
25°C
1.7
– 55°C
2.9
125°C
1.1
25°C
46°
– 55°C
49°
125°C
41°
MAX
UNIT
V/µs
nV/√H
nV/√Hz
kHz
MHz
operating characteristics at specified free-air temperature, VDD = 10 V
PARAMETER
TEST CONDITIONS
VI(PP)
( )=1V
SR
Slew rate at unity gain
RL = 10 kΩ,
CL = 20 pF
pF,
See Figure 98
VI(PP)
( ) = 5.5 V
Vn
Equivalent input noise voltage
f = 1 kHz,,
See Figure 99
RS = 20 Ω,,
BOM
Maximum output-swing bandwidth
VO = VOH,
RL = 10 kΩ,
kΩ
CL = 20 pF,
F
See Figure 98
VI = 10 mV,
V
See Figure 100
CL = 20 pF,
F
B1
φm
Unity-gain bandwidth
Phase margin
f = B1,
CL = 20 pF,
F,
POST OFFICE BOX 655303
mV
VI = 10 mV,
See Figure 100
• DALLAS, TEXAS 75265
TA
TLC271M
MIN
TYP
25°C
5.3
– 55°C
7.1
125°C
3.1
25°C
4.6
– 55°C
6.1
125°C
2.7
25°C
25
25°C
200
– 55°C
280
125°C
110
25°C
2.2
– 55°C
3.4
125°C
1.6
25°C
49°
– 55°C
52°
125°C
44°
MAX
UNIT
V/µs
nV/√H
nV/√Hz
kHz
MHz
11
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
TYPICAL CHARACTERISTICS (HIGH-BIAS MODE)
Table of Graphs
FIGURE
12
VIO
αVIO
Input offset voltage
Distribution
2, 3
Temperature coefficient
Distribution
4, 5
VOH
High-level
g
output voltage
g
High-level
output
vs High
level out
ut current
vs Supply
y voltage
g
vs Free-air temperature
6, 7
8
9
VOL
Low level output voltage
Low-level
vs Common-mode
Common mode input
in ut voltage
vs Differential input voltage
g
vs Free-air temperature
vs Low-level output current
10, 11
12
13
14, 15
AVD
Large-signal
g
g
differential voltage
g amplification
vs Supply
Su ly voltage
vs Free-air temperature
vs Frequency
16
17
28, 29
IIB
IIO
Input bias current
vs Free-air temperature
18
Input offset current
vs Free-air temperature
18
VIC
Common-mode input voltage
vs Supply voltage
19
IDD
Supply current
vs Supplyy voltage
g
vs Free-air temperature
20
21
SR
Slew rate
vs Supply
y voltage
g
vs Free-air temperature
22
23
Bias-select current
vs Supply voltage
24
VO(PP)
Maximum peak-to-peak output voltage
vs Frequency
25
B1
Unity gain bandwidth
Unity-gain
vs Free-air temperature
vs Supply voltage
26
27
AVD
Large-signal differential voltage amplification
vs Frequency
φm
Phase margin
g
vs Supply
Su ly voltage
vs Free-air temperature
vs Capacitive load
Vn
Equivalent input noise voltage
vs Frequency
33
Phase shift
vs Frequency
28, 29
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
28, 29
30
31
32
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
TYPICAL CHARACTERISTICS (HIGH-BIAS MODE)†
DISTRIBUTION OF TLC271
INPUT OFFSET VOLTAGE
Percentage of Units – %
50
ÎÎÎÎÎÎÎÎÎÎÎÎ
60
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
753 Amplifiers Tested From 6 Wafer Lots
VDD = 10 V
753 Amplifiers Tested From 6 Wafer Lots
VDD = 5 V
TA = 25°C
P Package
50
Percentage of Units – %
60
DISTRIBUTION OF TLC271
INPUT OFFSET VOLTAGE
40
30
20
TA = 25°C
P Package
40
30
20
10
10
0
1
2
3
–5 –4 –3 –2 –1 0
VIO – Input Offset Voltage – mV
4
0
–5 –4 –3 –2 –1 0
1
2
3
VIO – Input Offset Voltage – mV
5
DISTRIBUTION OF TLC271
INPUT OFFSET VOLTAGE
TEMPERATURE COEFFICIENT
40
DISTRIBUTION OF TLC271
INPUT OFFSET VOLTAGE
TEMPERATURE COEFFICIENT
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
324 Amplifiers Tested From 8 Wafer Lots
VDD = 5 V
TA = 25°C to 125°C
P Package
Outliers:
(1) 20.5 µV/°C
ÎÎÎÎÎ
60
50
Percentage of Units – %
Percentage of Units – %
50
5
Figure 3
Figure 2
60
4
30
20
10
40
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
324 Amplifiers Tested From 8 Wafer lots
VDD = 10 V
TA = 25°C to 125°C
P Package
Outliers:
(1) 21.2 µV/°C
ÎÎÎÎÎ
30
20
10
0
– 10 – 8 – 6 – 4 – 2 0
2
4
6
8
αVIO – Temperature Coefficient – µV/°C
10
0
– 10 – 8 – 6 – 4 – 2 0
2
4
6
8
αVIO – Temperature Coefficient – µV/°C
Figure 4
10
Figure 5
† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
13
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
TYPICAL CHARACTERISTICS (HIGH-BIAS MODE)†
HIGH-LEVEL OUTPUT VOLTAGE
vs
HIGH-LEVEL OUTPUT CURRENT
HIGH-LEVEL OUTPUT VOLTAGE
vs
HIGH-LEVEL OUTPUT CURRENT
16
VID = 100 mV
TA = 25°C
VOH
VOH – High-Level Output Voltage – V
VOH
VOH – High-Level Output Voltage – V
5
4
VDD = 5 V
3
VDD = 4 V
VDD = 3 V
2
ÁÁÁ
ÁÁÁ
ÁÁÁ
VDD = 16 V
0
–2
–4
–6
–8
IOH – High-Level Output Current – mA
10
ÎÎÎÎÎ
ÎÎÎÎÎ
8
VDD = 10 V
6
4
2
0
– 10
0
–5
– 15 – 20 – 25
– 30
– 35 – 40
Figure 7
HIGH-LEVEL OUTPUT VOLTAGE
vs
SUPPLY VOLTAGE
HIGH-LEVEL OUTPUT VOLTAGE
vs
FREE-AIR TEMPERATURE
16
VDD – 1.6
VID = 100 mV
RL = 10 kΩ
TA = 25°C
14
VOH – High-Level Output Voltage – V
VOH
VOH – High-Level Output Voltage – V
VOH
– 10
IOH – High-Level Output Current – mA
Figure 6
12
10
ÁÁ
ÁÁ
VID = 100 mV
TA = 25°C
12
ÁÁ
ÁÁ
ÁÁ
1
0
14
8
6
– 1.7
VDD = 5 V
IOH = – 5 mA
VID = 100 mA
– 1.8
– 1.9
–2
VDD = 10 V
– 2.1
ÁÁ
ÁÁ
4
2
0
0
2
4
6
8
10
12
VDD – Supply Voltage – V
14
16
– 2.2
– 2.3
– 2.4
– 75
– 50 – 25
0
20
50
75
100
TA – Free-Air Temperature – °C
Figure 8
Figure 9
† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
14
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
125
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
TYPICAL CHARACTERISTICS (HIGH-BIAS MODE)†
LOW-LEVEL OUTPUT VOLTAGE
vs
COMMON-MODE INPUT VOLTAGE
500
VDD = 5 V
IOL = 5 mA
TA = 25°C
650
VOL
VOL – Low-Level Output Voltage – mV
VOL
VOL– Low-Level Output Voltage – mV
700
LOW-LEVEL OUTPUT VOLTAGE
vs
COMMON-MODE INPUT VOLTAGE
600
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
550
VID = – 100 mV
500
450
ÁÁ
ÁÁ
450
400
VID = – 100 mV
VID = – 1 V
350
VID = – 2.5 V
ÁÁÁ
ÁÁÁ
400
VID = – 1 V
350
300
0
VDD = 10 V
IOL = 5 mA
TA = 25°C
1
2
3
VIC – Common-Mode Input Voltage – V
300
250
4
0
1
3
5
7
9
2
4
6
8
VIC – Common-Mode Input Voltage – V
Figure 11
Figure 10
LOW-LEVEL OUTPUT VOLTAGE
vs
DIFFERENTIAL INPUT VOLTAGE
LOW-LEVEL OUTPUT VOLTAGE
vs
FREE-AIR TEMPERATURE
900
IOL = 5 mA
VIC = VID/2
TA = 25°C
700
VOL
VOL – Low-Level Output Voltage – mV
VOL
VOL– Low-Level Output Voltage – mV
800
600
ÎÎÎÎ
ÎÎÎÎ
500
VDD = 5 V
400
300
ÁÁ
ÁÁ
10
VDD = 10 V
ÁÁ
ÁÁ
200
100
0
0
–1
– 2 – 3 – 4 – 5 – 6 – 7 – 8 – 9 – 10
VID – Differential Input Voltage – V
800
IOL = 5 mA
VID = – 1 V
VIC = 0.5 V
700
ÎÎÎÎ
VDD = 5 V
600
500
ÎÎÎÎ
ÎÎÎÎ
400
VDD = 10 V
300
200
100
0
– 75
– 50
Figure 12
– 25
0
25
50
75
100
TA – Free-Air Temperature – °C
125
Figure 13
† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
15
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
TYPICAL CHARACTERISTICS (HIGH-BIAS MODE)†
LOW-LEVEL OUTPUT VOLTAGE
vs
LOW-LEVEL OUTPUT CURRENT
LOW-LEVEL OUTPUT VOLTAGE
vs
LOW-LEVEL OUTPUT CURRENT
3
VID = – 1 V
VIC = 0.5 V
TA = 25°C
0.9
0.8
VOL
VOL – Low-Level Output Voltage – mV
VOL
VOL– Low-Level Output Voltage – mV
1
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
VDD = 5 V
0.7
VDD = 4 V
0.6
VDD = 3 V
0.5
0.4
ÁÁ
ÁÁ
ÁÁ
0.3
ÁÁ
ÁÁ
0.2
0.1
0
0
1
2
3
4
5
6
7
IOL – Low-Level Output Current – mA
8
VID = –1 V
VIC = 0.5 V
TA = 25°C
2.5
2
VDD = 10 V
1.5
1
0.5
0
0
5
10
15
20
25
IOL – Low-Level Output Current – mA
LARGE-SIGNAL
DIFFERENTIAL VOLTAGE AMPLIFICATION
vs
FREE-AIR TEMPERATURE
LARGE-SIGNAL
DIFFERENTIAL VOLTAGE AMPLIFICATION
vs
SUPPLY VOLTAGE
AVD
AVD– Large-Signal Differential
Voltage Amplification – V/mV
ÁÁ
ÁÁ
ÁÁ
50
40
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
0°C
85°C
30
125°C
ÁÁ
ÁÁ
ÁÁ
20
10
0
2
4
6
8
10
12
VDD – Supply Voltage – V
14
RL = 10 kΩ
45
25°C
0
ÎÎÎÎÎ
ÎÎÎÎÎ
50
TA = – 55°C
AVD
AVD– Large-Signal Differential
Voltage Amplification – V/mV
ÎÎÎÎ
ÎÎÎÎ
RL = 10 kΩ
16
40
VDD = 10 V
35
30
25
20
VDD = 5 V
15
10
5
0
– 75
– 50
Figure 16
– 25
0
25
50
75
100
TA – Free-Air Temperature – °C
Figure 17
† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
16
30
Figure 15
Figure 14
60
VDD = 16 V
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
125
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
TYPICAL CHARACTERISTICS (HIGH-BIAS MODE)†
COMMON-MODE INPUT VOLTAGE
(POSITIVE LIMIT)
vs
SUPPLY VOLTAGE
INPUT BIAS CURRENT AND INPUT OFFSET
CURRENT
vs
FREE-AIR TEMPERATURE
IIB
I IO – Input Bias and
IIB and IIO
Input Offset Currents – nA
VDD = 10 V
VIC = 5 V
See Note A
1000
100
16
ÎÎ
ÎÎ
IIB
10
V IC – Common-Mode Input Voltage – V
ÁÁÁÁ
ÁÁÁÁ
ÁÁÁÁ
10000
ÎÎ
ÎÎ
IIO
1
TA = 25°C
14
12
10
8
6
4
2
0
0.1
25
125
45
65
85
105
TA – Free-Air Temperature – °C
NOTE A: The typical values of input bias current and input offset
current below 5 pA were determined mathematically.
0
2
4
6
8
10
12
VDD – Supply Voltage – V
SUPPLY CURRENT
vs
FREE-AIR TEMPERATURE
SUPPLY CURRENT
vs
SUPPLY VOLTAGE
ÎÎÎÎ
ÎÎÎÎ
2
IDD
I DD – Supply Current – mA
TA =– 55°C
ÎÎÎ
0°C
1.5
25°C
ÁÁÁ
ÁÁÁ
ÁÁÁ
1
70°C
125°C
0.5
ÁÁ
ÁÁ
ÁÁ
0
0
2
ÎÎÎÎÎ
ÎÎÎÎÎ
VO = VDD /2
No Load
4
6
8
10
12
VDD – Supply Voltage – V
14
IDD
I DD – Supply Current – mA
VO = VDD /2
No Load
2
16
Figure 19
Figure 18
2.5
14
16
1.5
VDD = 10 V
1
VDD = 5 V
0.5
0
– 75
– 50
Figure 20
– 25
0
25
50
75
100
TA – Free-Air Temperature – °C
125
Figure 21
† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
17
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
TYPICAL CHARACTERISTICS (HIGH-BIAS MODE)†
SLEW RATE
vs
FREE-AIR TEMPERATURE
SLEW RATE
vs
SUPPLY VOLTAGE
8
6
7
SR – Slew Rate – V/ µus
s
SR – Slew Rate – V/ µus
s
7
5
4
3
5
4
1
1
2
4
6
8
10
12
VDD – Supply Voltage – V
14
VDD = 5 V
VI(PP) = 1 V
– 50
MAXIMUM PEAK-TO-PEAK OUTPUT
VOLTAGE
vs
FREQUENCY
TA = 25°C
VI(SEL) = 0
Bias-Select Current – ua
µA
– 2.4
– 2.1
– 1.8
– 1.5
– 1.2
– 0.9
– 0.6
– 0.3
0
4
6
8
10
12
VDD – Supply Voltage – V
14
16
VO(PP) – Maximum Peak-to-Peak Output Voltage – V
– 3
2
125
Figure 23
BIAS-SELECT CURRENT
vs
SUPPLY VOLTAGE
0
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
– 25
0
25
50
75
100
TA – Free-Air Temperature – °C
Figure 22
– 2.7
ÎÎÎÎ
VDD = 10 V
VI(PP) = 1 V
VDD = 5 V
VI(PP) = 2.5 V
0
– 75
16
AV = 1
RL = 10 kΩ
CL = 20 pF
See Figure 99
3
2
0
VDD = 10 V
VI(PP) = 5.5 V
6
2
0
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
8
AV = 1
VI(PP) = 1 V
RL = 10 kΩ
CL = 20 pF
TA = 25°C
See Figure 98
ÎÎÎÎ
ÎÎÎÎ
10
VDD = 10 V
9
8
7
6
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
5
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
TA = 125°C
TA = 25°C
TA = 55°C
VDD = 5 V
4
3
RL = 10 kΩ
See Figure 98
2
1
0
10
Figure 24
100
1000
f – Frequency – kHz
10000
Figure 25
† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
18
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
TYPICAL CHARACTERISTICS (HIGH-BIAS MODE)†
UNITY-GAIN BANDWIDTH
vs
FREE-AIR TEMPERATURE
2.5
VDD = 5 V
VI = 10 mV
CL = 20 pF
See Figure 100
B1
B1 – Unity-Gain Bandwidth – MHz
B1
B1 – Unity-Gain Bandwidth – MHz
3
UNITY-GAIN BANDWIDTH
vs
SUPPLY VOLTAGE
2.5
2
1.5
1
– 75
– 50
– 25
0
25
50
75
100
TA – Free-Air Temperature – °C
VI = 10 mV
CL = 20 pF
TA = 25°C
See Figure 100
2
1.5
1
125
0
2
4
6
8
10
12
VDD – Supply Voltage – V
Figure 26
14
16
Figure 27
LARGE-SIGNAL DIFFERENTIAL VOLTAGE
AMPLIFICATION AND PHASE SHIFT
vs
FREQUENCY
107
ÁÁ
ÁÁ
105
0°
104
30°
AVD
103
60°
102
90°
Phase Shift
AVD
AVD– Large-Signal Differential
Voltage Amplification
106
VDD = 5 V
RL = 10 kΩ
TA = 25°C
Phase Shift
101
120°
1
150°
0.1
10
100
1k
10 k
100 k
f – Frequency – Hz
1M
180°
10 M
Figure 28
† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
19
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
TYPICAL CHARACTERISTICS (HIGH-BIAS MODE)†
LARGE-SCALE DIFFERENTIAL VOLTAGE
AMPLIFICATION AND PHASE SHIFT
vs
FREQUENCY
107
VDD = 10 V
RL = 10 kΩ
TA = 25°C
ÁÁ
ÁÁ
105
0°
104
30°
AVD
103
60°
102
90°
Phase Shift
AVD
AVD– Large-Signal Differential
Voltage Amplification
106
Phase Shift
101
120°
1
150°
0.1
100
10
1k
10 k
100 k
f – Frequency – Hz
1M
180°
10 M
Figure 29
PHASE MARGIN
vs
SUPPLY VOLTAGE
PHASE MARGIN
vs
FREE-AIR TEMPERATURE
53°
50°
VDD = 5 V
VI = 10 mV
CL = 20 pF
See Figure 100
52°
48°
φm
m – Phase Margin
φm
m – Phase Margin
51°
50°
49°
ÁÁ
ÁÁ
ÁÁ
ÁÁ
48°
VI = 10 mV
CL = 20 pF
TA = 25°C
See Figure 100
47°
46°
45°
0
2
4
6
8
10
12
VDD – Supply Voltage – V
14
16
46°
44°
42°
40°
– 75 – 50 – 25
0
25
50
75
100
TA – Free-Air Temperature – °C
Figure 31
Figure 30
† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
20
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
125
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
TYPICAL CHARACTERISTICS (HIGH-BIAS MODE)†
50°
VDD = 5 mV
VI = 10 mV
TA = 25°C
See Figure 100
φm
m – Phase Margin
45°
ÁÁ
ÁÁ
ÁÁ
ÁÁ
40°
ÁÁ
ÁÁ
35°
30°
25°
0
20
40
60
80
CL – Capacitive Load – pF
100
VN
nV/ Hz
V n– Equivalent Input Noise Voltage – nV/Hz
PHASE MARGIN
vs
CAPACITIVE LOAD
EQUIVALENT NOISE VOLTAGE
vs
FREQUENCY
ÁÁÁÁÁ
ÁÁÁÁÁ
ÁÁÁÁÁ
ÁÁÁÁÁ
400
VDD = 5 V
RS = 20 Ω
TA = 25°C
See Figure 99
350
300
250
200
150
100
50
0
1
Figure 32
10
100
f – Frequency – Hz
1000
Figure 33
† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
21
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
MEDIUM-BIAS MODE
electrical characteristics at specified free-air temperature (unless otherwise noted)
TLC271C, TLC271AC, TLC271BC
PARAMETER
TEST CONDITIONS
TLC271C
VIO
Input offset voltage
TLC271AC
VO = 1
1.4
4V
V,
VIC = 0
RS = 50 Ω,
RI = 100 kΩ
TLC271BC
TA†
VDD = 5 V
MIN
TYP
MAX
VDD = 10 V
MIN
TYP
MAX
25°C
1.1
1.1
Full range
10
12
25°C
0.9
Full range
0.25
Full range
5
0.9
2
0.26
3
αVIO
IIO
Input offset current (see Note 4)
VO = VDD /2,,
VIC = VDD /2
25°C
0.1
60
0.1
60
70°C
7
300
7
300
IIB
Input bias current (see Note 4)
VO = VDD /2,,
VIC = VDD /2
25°C
0.6
60
0.7
60
70°C
40
600
50
600
VOH
VOL
AVD
CMRR
25°C
– 0.2
to
4
Full range
– 0.2
to
3.5
Common-mode input
voltage range (see Note 5)
High-level output voltage
Low-level output voltage
L
i
l diff
ti l
Large-signal
differential
voltage am
lification
amplification
Common-mode rejection ratio
VID = 100 mV,
V
RL = 100 kΩ
VID = –100
100 mV,
V
IOL = 0
kΩ
RL = 100 kΩ,
See Note 6
VIC = VICRmin
µV/°C
2.1
– 0.3
to
4.2
– 0.2
to
9
–0.3
to
9.2
3.2
3.9
8
8.7
0°C
3
3.9
7.8
8.7
70°C
3
4
7.8
8.7
V
25°C
0
50
0
50
0°C
0
50
0
50
0
50
0
50
25°C
25
170
25
275
0°C
15
200
15
320
70°C
15
140
15
230
25°C
65
91
65
94
0°C
60
91
60
94
70°C
60
92
60
94
25°C
70
93
70
93
0°C
60
92
60
92
70°C
60
94
60
94
dB
II(SEL)
Input current (BIAS SELECT)
VI(SEL) = VDD /2
25°C
– 130
105
280
143
300
Supply current
VO = VDD /2,
VIC = VDD /2,
No load
25°C
IDD
0°C
125
320
173
400
70°C
85
220
110
280
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
dB
– 160
† Full range is 0°C to 70°C.
NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically.
5. This range also applies to each input individually.
6. At VDD = 5 V, VO = 0.25 V to 2 V; at VDD = 10 V, VO = 1 V to 6 V.
mV
V/mV
VDD = 5 V to
t 10 V
VO = 1
1.4
4V
22
pA
V
Supply-voltage
S
l
lt
rejection
j ti ratio
ti
(∆VDD /∆VIO)
kSVR
pA
V
– 0.2
to
8.5
25°C
70°C
mV
2
Average temperature coefficient
of input offset voltage
VICR
1.7
5
6.5
3
25°C to
70°C
10
12
6.5
25°C
UNIT
nA
µA
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
MEDIUM-BIAS MODE
electrical characteristics at specified free-air temperature (unless otherwise noted)
TLC271I, TLC271AI, TLC271BI
TEST
CONDITIONS
PARAMETER
TLC271I
VIO
Input offset voltage
TLC271AI
VO = 1
1.4
4V
V,
VIC = 0 V,,
RS = 50 Ω,
RL = 100 kΩ
TLC271BI
TA†
VDD = 5 V
MIN
TYP
MAX
VDD = 10 V
MIN
TYP
MAX
25°C
1.1
1.1
Full range
10
13
25°C
0.9
Full range
0.25
Full range
5
0.9
2
0.26
3.5
αVIO
IIO
Input offset current (see Note 4)
VO = VDD /2,,
VIC = VDD /2
25°C
0.1
60
0.1
60
85°C
24
1000
26
1000
IIB
Input bias current (see Note 4)
VO = VDD /2,,
VIC = VDD /2
25°C
0.6
60
0.7
60
85°C
200
2000
220
2000
VOH
VOL
AVD
CMRR
– 0.2
to
4
Full range
– 0.2
to
3.5
Common-mode input
voltage range (see Note 5)
High-level output voltage
Low-level output voltage
L
i
l diff
ti l
Large-signal
differential
voltage am
lification
amplification
Common-mode rejection ratio
VID = 100 mV,
V
RL = 100 kΩ
VID = –100
100 mV,
V
IOL = 0
kΩ
RL = 100 kΩ,
See Note 6
VIC = VICRmin
Supply-voltage
S
l
lt
rejection
j ti ratio
ti
(∆VDD /∆VIO)
VDD = 5 V to
t 10 V
VO = 1
1.4
4V
II(SEL)
Input current (BIAS SELECT)
VI(SEL) = VDD /2
IDD
Supply current
VO = VDD /2,
VIC = VDD /2,
No load
kSVR
25°C
µV/°C
2.1
– 0.3
to
4.2
– 0.2
to
9
– 0.3
to
9.2
25°C
3.2
3.9
8
8.7
3
3.9
7.8
8.7
85°C
3
4
7.8
8.7
V
25°C
0
50
0
50
– 40°C
0
50
0
50
0
50
0
50
25°C
25
170
25
275
– 40°C
15
270
15
390
85°C
15
130
15
220
25°C
65
91
65
94
– 40°C
60
90
60
93
85°C
60
90
60
94
25°C
70
93
70
93
– 40°C
60
91
60
91
85°C
60
94
60
94
– 130
pA
V
– 40°C
25°C
pA
V
– 0.2
to
8.5
85°C
mV
2
Average temperature coefficient
of input offset voltage
VICR
1.7
5
7
3.5
25°C to
85°C
10
13
7
25°C
UNIT
mV
V/mV
dB
dB
– 160
nA
25°C
105
280
143
300
– 40°C
158
400
225
450
85°C
80
200
103
260
µA
† Full range is – 40°C to 85°C.
NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically.
5. This range also applies to each input individually.
6. At VDD = 5 V, VO = 0.25 V to 2 V; at VDD = 10 V, VO = 1 V to 6 V.
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
23
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
MEDIUM-BIAS MODE
electrical characteristics at specified free-air temperature (unless otherwise noted)
TLC271M
PARAMETER
VIO
Input offset voltage
TEST
CONDITIONS
VO = 1.4 V,
VIC = 0 V,
RS = 50 Ω,
RL = 100 kΩ
αVIO
Average temperature coefficient
of input offset voltage
IIO
Input offset current (see Note 4)
VO = VDD /2,,
VIC = VDD /2
IIB
Input bias current (see Note 4)
VO = VDD /2,,
VIC = VDD /2
VICR
VOH
VOL
AVD
CMRR
TA†
VDD = 5 V
MIN
TYP
MAX
VDD = 10 V
MIN
TYP
MAX
UNIT
25°C
1.1
1.1
mV
Full range
Low-level output voltage
Large-signal
L
i
l diff
differential
ti l
voltage am
amplification
lification
Common-mode rejection ratio
12
10
12
25°C to
125°C
1.7
25°C
0.1
60
0.1
60
pA
125°C
1.4
15
1.8
15
nA
25°C
0.6
60
0.7
60
pA
125°C
9
35
10
35
nA
25°C
0
to
4
Full range
0
to
3.5
Common-mode input
voltage range (see Note 5)
High-level output voltage
10
µV/°C
2.1
– 0.3
to
4.2
0
to
9
– 0.3
to
9.2
V
0
to
8.5
V
25°C
3.2
3.9
8
8.7
VID = 100 mV,
V
RL = 100 kΩ
– 55°C
3
3.9
7.8
8.6
125°C
3
4
7.8
8.6
25°C
0
50
0
50
VID = –100
100 mV,
V
IOL = 0
– 55°C
0
50
0
50
125°C
0
50
0
50
25°C
25
170
25
275
RL = 10 kΩ
See Note 6
– 55°C
15
290
15
420
125°C
15
120
15
190
25°C
65
91
65
94
– 55°C
60
89
60
93
125°C
60
91
60
93
25°C
70
93
70
93
– 55°C
60
91
60
91
125°C
60
94
60
VIC = VICRmin
V
V/mV
dB
kSVR
S
l
lt
j ti ratio
ti
Supply-voltage
rejection
(∆VDD /∆VIO)
t 10 V
VDD = 5 V to
VO = 1
1.4
4V
II(SEL)
Input current (BIAS SELECT)
VI(SEL) = VDD /2
25°C
– 130
VO = VDD /2,
VIC = VDD /2,
No load
25°C
105
280
143
300
– 55°C
170
440
245
500
125°C
70
180
90
240
IDD
Supply current
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
dB
94
– 160
† Full range is – 55°C to 125°C.
NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically.
5. This range also applies to each input individually.
6. At VDD = 5 V, VO = 0.25 V to 2 V; at VDD = 10 V, VO = 1 V to 6 V.
24
mV
nA
µA
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
MEDIUM-BIAS MODE
operating characteristics at specified free-air temperature, VDD = 5 V
PARAMETER
TEST CONDITIONS
TA
TLC271C, TLC271AC,
TLC271BC
MIN
VI(PP)
( )=1V
SR
Slew rate at unity gain
RL = 100 kΩ,
CL = 20 pF,
pF
See Figure 98
VI(PP)
( ) = 2.5 V
Vn
BOM
B1
φm
Equivalent input noise voltage
f = 1 kHz,
See Figure 99
RS = 20 Ω,
Maximum output-swing bandwidth
VO = VOH,
RL = 100 kΩ
kΩ,
CL = 20 pF,
F
See Figure 98
VI = 10 mV,
V
See Figure 100
CL = 20 pF,
F
Unity-gain bandwidth
Phase margin
VI = 10 mV,
mV
CL = 20 pF
F,
f = B1,
See Figure 100
TYP
25°C
0.43
0°C
0.46
70°C
0.36
25°C
0.40
0°C
0.43
70°C
0.34
25°C
32
25°C
55
0°C
60
70°C
50
25°C
525
0°C
600
70°C
400
25°C
40°
0°C
41°
70°C
39°
UNIT
MAX
V/µs
nV/√Hz
kHz
kHz
operating characteristics at specified free-air temperature, VDD = 10 V
PARAMETER
TEST CONDITIONS
TA
TLC271C, TLC271AC,
TLC271BC
MIN
VI(PP)
( )=1V
SR
Slew rate at unity gain
RL = 100 kΩ,
CL = 20 pF,
pF
See Figure 98
VI(PP)
( ) = 5.5 V
Vn
BOM
B1
φm
Equivalent input noise voltage
f = 1 kHz,
See Figure 99
RS = 20 Ω,
Maximum output-swing bandwidth
VO = VOH,
RL = 100 kΩ
kΩ,
CL = 20 pF,
F
See Figure 98
VI = 10 mV,
V
See Figure 100
F
CL = 20 pF,
Unity-gain bandwidth
Phase margin
VI = 10 mV,
mV
CL = 20 pF
F,
POST OFFICE BOX 655303
f = B1,
See Figure 100
• DALLAS, TEXAS 75265
TYP
25°C
0.62
0°C
0.67
70°C
0.51
25°C
0.56
0°C
0.61
70°C
0.46
25°C
32
25°C
35
0°C
40
70°C
30
25°C
635
0°C
710
70°C
510
25°C
43°
0°C
44°
70°C
42°
UNIT
MAX
V/µs
nV/√Hz
kHz
kHz
25
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
MEDIUM-BIAS MODE
operating characteristics at specified free-air temperature, VDD = 5 V
PARAMETER
TEST CONDITIONS
TA
TLC271I, TLC271AI,
TLC271BI
MIN
VI(PP)
( )=1V
SR
Slew rate at unity gain
RL = 100 kΩ,
CL = 20 pF,
pF
See Figure 98
VI(PP)
( ) = 2.5 V
Vn
BOM
B1
φm
Equivalent input noise voltage
f = 1 kHz,
See Figure 99
RS = 20 Ω,
Maximum output-swing bandwidth
VO = VOH,
RL = 100 kΩ
kΩ,
CL = 20 pF,
F
See Figure 98
VI = 10 mV,
V
See Figure 100
CL = 20 pF,
F
Unity-gain bandwidth
Phase margin
VI = 10 mV,
mV
CL = 20 pF
F,
f = B1,
See Figure 100
TYP
25°C
0.43
– 40°C
0.51
85°C
0.35
25°C
0.40
– 40°C
0.48
85°C
0.32
25°C
32
25°C
55
– 40°C
75
85°C
45
25°C
525
– 40°C
770
85°C
370
25°C
40°
– 40°C
43°
85°C
38°
UNIT
MAX
V/µs
nV/√Hz
kHz
MHz
operating characteristics at specified free-air temperature, VDD = 10 V
PARAMETER
TEST CONDITIONS
TA
TLC271I, TLC271AI,
TLC271BI
MIN
VI(PP)
( )=1V
SR
Slew rate at unity gain
RL = 100 kΩ,
CL = 20 pF,
pF
See Figure 98
VI(PP)
( ) = 5.5 V
Vn
BOM
B1
φm
26
Equivalent input noise voltage
f = 1 kHz,
See Figure 99
RS = 20 Ω,
Maximum output-swing bandwidth
VO = VOH,3
3
RL = 100 kΩ
kΩ,
CL = 20 pF,
F
See Figure 98
V
VI = 10 mV,
See Figure 100
F
CL = 20 pF,
Unity-gain bandwidth
Phase margin
VI = 10 mV,
mV
CL = 20 pF
F,
POST OFFICE BOX 655303
f = B1,
See Figure 100
• DALLAS, TEXAS 75265
TYP
25°C
0.62
– 40°C
0.77
85°C
0.47
25°C
0.56
– 40°C
0.70
85°C
0.44
25°C
32
25°C
35
– 40°C
45
85°C
25
25°C
635
– 40°C
880
85°C
480
25°C
43°
– 40°C
46°
85°C
41°
UNIT
MAX
V/µs
nV/√Hz
kHz
kHz
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
MEDIUM-BIAS MODE
operating characteristics at specified free-air temperature, VDD = 5 V
PARAMETER
TEST CONDITIONS
VI(PP)
( )=1V
SR
Slew rate at unity gain
RL = 100 kΩ,
CL = 20 pF,
pF
See Figure 98
VI(PP)
( ) = 2.5 V
Vn
Equivalent input noise voltage
f = 1 kHz,
See Figure 99
RS = 20 Ω,
BOM
Maximum output-swing bandwidth
VO = VOH,
RL = 100 kΩ
kΩ,
CL = 20 pF,
F
See Figure 98
VI = 10 mV,
V
See Figure 100
CL = 20 pF,
F
B1
φm
Unity-gain bandwidth
Phase margin
mV
VI = 10 mV,
CL = 20 pF
F,
f = B1,
See Figure 100
TA
TLC271M
MIN
TYP
25°C
0.43
– 55°C
0.54
125°C
0.29
25°C
0.40
– 55°C
0.50
125°C
0.28
25°C
32
25°C
55
– 55°C
80
125°C
40
25°C
525
– 55°C
850
125°C
330
25°C
40°
– 55°C
43°
125°C
36°
MAX
UNIT
V/µs
nV/√Hz
kHz
kHz
operating characteristics at specified free-air temperature, VDD = 10 V
PARAMETER
TEST CONDITIONS
VI(PP)
( )=1V
SR
Slew rate at unity gain
RL = 100 kΩ,
CL = 20 pF,
pF
See Figure 98
VI(PP)
( ) = 5.5 V
Vn
Equivalent input noise voltage
f = 1 kHz,
See Figure 99
BOM
Maximum output-swing bandwidth
VO = VOH,
RL = 100 kΩ
kΩ,
B1
φm
Unity-gain bandwidth
Phase margin
VI = 10 mV,
V
See Figure 100
mV
VI = 10 mV,
CL = 20 pF
F,
POST OFFICE BOX 655303
RS = 20 Ω,
CL = 20 pF,
F
See Figure 98
CL = 20 pF,
F
f = B1,
See Figure 100
• DALLAS, TEXAS 75265
TA
TLC271M
MIN
TYP
25°C
0.62
– 55°C
0.81
125°C
0.38
25°C
0.56
– 55°C
0.73
125°C
0.35
25°C
32
25°C
35
– 55°C
50
125°C
20
25°C
635
– 55°C
960
125°C
440
25°C
43°
– 55°C
47°
125°C
39°
MAX
UNIT
V/µs
nV/√Hz
kHz
kHz
27
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
TYPICAL CHARACTERISTICS (MEDIUM-BIAS MODE)
Table of Graphs
FIGURE
28
VIO
αVIO
Input offset voltage
Distribution
34, 35
Temperature coefficient
Distribution
36, 37
VOH
High-level
g
output voltage
g
High-level
output
vs High
level out
ut current
vs Supply
y voltage
g
vs Free-air temperature
38, 39
40
41
VOL
Low level output voltage
Low-level
vs Common-mode
Common mode input
in ut voltage
vs Differential input voltage
g
vs Free-air temperature
vs Low-level output current
42, 43
44
45
46, 47
AVD
Large-signal
g
g
differential voltage
g amplification
vs Supply
Su ly voltage
vs Free-air temperature
vs Frequency
48
49
60, 61
IIB
IIO
Input bias current
vs Free-air temperature
50
Input offset current
vs Free-air temperature
50
VI
Maximum Input voltage
vs Supply voltage
51
IDD
Supply current
vs Supplyy voltage
g
vs Free-air temperature
52
53
SR
Slew rate
vs Supply
y voltage
g
vs Free-air temperature
54
55
Bias-select current
vs Supply voltage
56
VO(PP)
Maximum peak-to-peak output voltage
vs Frequency
57
B1
Unity gain bandwidth
Unity-gain
vs Free-air temperature
vs Supply voltage
58
59
φm
Phase margin
g
vs Supply
Su ly voltage
vs Free-air temperature
vs Capacitive load
62
63
64
Vn
Equivalent input noise voltage
vs Frequency
65
Phase shift
vs Frequency
60, 61
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
TYPICAL CHARACTERISTICS (MEDIUM-BIAS MODE)†
DISTRIBUTION OF TLC271
INPUT OFFSET VOLTAGE
DISTRIBUTION OF TLC271
INPUT OFFSET VOLTAGE
Percentage of Units – %
50
40
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÁÁÁÁ
ÎÎÎÎ
ÁÁÁÁ
ÎÎÎÎ
ÁÁÁÁ
ÎÎÎÎ
60
612 Amplifiers Tested From 6 Wafer Lots
VDD = 5 V
TA = 25°C
N Package
50
Percentage of Units – %
60
30
20
40
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÁÁÁÁ
ÁÁÁÁ
ÎÎÎÎ
ÁÁÁÁ
ÎÎÎÎ
ÁÁÁÁ
612 Amplifiers Tested From 6 Wafer Lots
VDD = 5 V
TA = 25°C
N Package
30
20
10
10
0
0
–5
–4
–3 –2 –1
0
1
2
3
VIO – Input Offset Voltage – mV
4
–5
5
–4
–3 –2 –1 0
1
2
3
VIO – Input Offset Voltage – mV
DISTRIBUTION OF TLC271
INPUT OFFSET VOLTAGE
TEMPERATURE COEFFICIENT
DISTRIBUTION OF TLC271
INPUT OFFSET VOLTAGE
TEMPERATURE COEFFICIENT
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
60
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
60
224 Amplifiers Tested From 6 Water Lots
VDD = 5 V
TA = 25°C to 125°C
P Package
Outliers:
(1) 33.0 µV/°C
50
Percentage of Units – %
Percentage of Units – %
40
5
Figure 35
Figure 34
50
4
30
20
10
40
224 Amplifiers Tested From 6 Water Lots
VDD = 10 V
TA = 25°C to 125°C
P Package
Outliers:
(1) 34.6 µV/°C
30
20
10
0
– 10 – 8 – 6 – 4 – 2
0
2 4
6
8
αVIO – Temperature Coefficient – µV/°C
10
0
– 10 – 8 – 6 – 4 – 2
0
2 4
6
8
αVIO – Temperature Coefficient – µV/°C
Figure 36
10
Figure 37
† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
29
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
TYPICAL CHARACTERISTICS (MEDIUM-BIAS MODE)†
HIGH-LEVEL OUTPUT VOLTAGE
vs
HIGH-LEVEL OUTPUT CURRENT
HIGH-LEVEL OUTPUT VOLTAGE
vs
HIGH-LEVEL OUTPUT CURRENT
16
5
V
VOH
OH – High-Level Output Voltage – V
V
VOH
OH – High-Level Output Voltage – V
VID = 100 mV
TA = 25°C
4
VDD = 5 V
3
VDD = 4 V
VDD = 3 V
2
ÁÁÁ
ÁÁÁ
VID = 100 mV
TA = 25°C
14
VDD = 16 V
12
10
8
VDD = 10 V
6
ÁÁÁ
ÁÁÁ
1
4
2
0
0
0
–2
–4
–6
–8
IOH – High-Level Output Current – mA
0
– 10
– 5 – 10 – 15 – 20 – 25 – 30 – 35 – 40
IOH – High-Level Output Current – mA
Figure 39
Figure 38
HIGH-LEVEL OUTPUT VOLTAGE
vs
SUPPLY VOLTAGE
VDD – 1.6
VID = 100 mV
RL = 10 kΩ
TA = 25°C
14
V
VOH
OH – High-Level Output Voltage – V
V
VOH
OH – High-Level Output Voltage – V
16
HIGH-LEVEL OUTPUT VOLTAGE
vs
FREE-AIR TEMPERATURE
12
10
ÁÁÁ
ÁÁÁ
ÁÁÁ
8
6
IOH = – 5 mA
VID = 100 mA
– 1.7
VDD = 5 V
– 1.8
– 1.9
–2
VDD = 10 V
– 2.1
ÁÁ
ÁÁ
4
2
0
0
2
4
6
8
10
12
VDD – Supply Voltage – V
14
16
– 2.2
– 2.3
– 2.4
– 75
– 50 – 25
0
20
50
75
100
TA – Free-Air Temperature – °C
Figure 40
Figure 41
† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
30
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
125
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
TYPICAL CHARACTERISTICS (MEDIUM-BIAS MODE)†
LOW-LEVEL OUTPUT VOLTAGE
vs
COMMON-MODE INPUT VOLTAGE
500
VDD = 5 V
IOL = 5 mA
TA = 25°C
650
VOL
VOL – Low-Level Output Voltage – mV
VOL
VOL – Low-Level Output Voltage – mV
700
LOW-LEVEL OUTPUT VOLTAGE
vs
COMMON-MODE INPUT VOLTAGE
600
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
550
VID = – 100 mV
500
450
ÁÁ ÎÎÎÎ
ÁÁ
450
400
VID = – 100 mV
VID = – 1 V
350
VID = – 2.5 V
ÁÁÁ
ÁÁÁ
400
VID = – 1 V
350
300
0
VDD = 10 V
IOL= 5 mA
TA = 25°C
1
2
3
VIC – Common-Mode Input Voltage – V
300
250
4
0
1
3
5 6
7
9
2
4
8
VIC – Common-Mode Input Voltage – V
Figure 42
Figure 43
LOW-LEVEL OUTPUT VOLTAGE
vs
DIFFERENTIAL INPUT VOLTAGE
900
IOL = 5 mA
VIC = |VID/2|
TA = 25°C
700
600
500
VDD = 5 V
400
300
ÁÁ
ÁÁ
VOL
VOL – Low-Level Output Voltage – mV
VOL
VOL – Low-Level Output Voltage – mV
LOW-LEVEL OUTPUT VOLTAGE
vs
FREE-AIR TEMPERATURE
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
800
10
800
IOL = 5 mA
VID = – 1 V
VIC = 0.5 V
700
VDD = 5 V
600
500
400
VDD = 10 V
ÁÁÁ
ÁÁÁ
VDD = 10 V
200
100
300
200
100
0
0
–1
–2 –3 –4 –5 –6 –7 –8
VID – Differential Input Voltage – V
– 9 – 10
0
– 75
– 50
Figure 44
– 25
0
25
50
75
100
TA – Free-Air Temperature – °C
125
Figure 45
† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
31
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
TYPICAL CHARACTERISTICS (MEDIUM-BIAS MODE)†
LOW-LEVEL OUTPUT VOLTAGE
vs
LOW-LEVEL OUTPUT CURRENT
1
3
VOL
VOL – Low-Level Output Voltage – V
VID = – 1 V
VIC = 0.5 V
TA = 25°C
0.9
VOL
VOL – Low-Level Output Voltage – V
LOW-LEVEL OUTPUT VOLTAGE
vs
LOW-LEVEL OUTPUT CURRENT
0.8
VDD = 5 V
0.7
VDD = 4 V
0.6
VDD = 3 V
0.5
0.4
ÁÁ
ÁÁ
ÁÁ
0.3
ÁÁ
ÁÁ
0.2
0.1
0
0
1
2
3
4
5
6
7
IOL – Low-Level Output Current – mA
VID = – 1 V
VIC = 0.5 V
TA = 25°C
2.5
VDD = 10 V
1.5
1
0.5
0
8
0
5
10
15
20
25
IOL – Low-Level Output Current – mA
Figure 46
ÁÁ
ÁÁ
ÁÁ
400
ÎÎÎÎÎ
ÎÎÎÎÎ
RL = 100 kΩ
LARGE-SIGNAL
DIFFERENTIAL VOLTAGE AMPLIFICATION
vs
FREE-AIR TEMPERATURE
0°C
25°C
300
70°C
ÎÎÎÎ
85°C
200
TA = 125°C
150
100
50
ÁÁ
ÁÁ
ÁÁ
0
0
2
4
6
8
10
12
VDD – Supply Voltage – V
14
RL = 100 kΩ
450
– 40°C
350
250
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
500
TA = – 55°C
AVD
AVD– Large-Signal Differential
Voltage Amplification – V/mV
AVD
AVD– Large-Signal Differential
Voltage Amplification – V/mV
450
16
400
350
VDD = 10 V
300
250
200
ÎÎÎÎÎ
ÎÎÎÎÎ
150
VDD = 5 V
100
50
0
– 75
– 50
Figure 48
– 25
0
25
50
75
100
TA – Free-Air Temperature – °C
Figure 49
† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
32
30
Figure 47
LARGE-SIGNAL
DIFFERENTIAL VOLTAGE AMPLIFICATION
vs
SUPPLY VOLTAGE
500
VDD = 16 V
ÎÎÎÎ
ÎÎÎÎ
2
ÎÎÎÎ
ÎÎÎÎ
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
125
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
TYPICAL CHARACTERISTICS (MEDIUM-BIAS MODE)†
INPUT BIAS CURRENT AND INPUT OFFSET
CURRENT
vs
FREE-AIR TEMPERATURE
ÁÁÁÁÁ
ÁÁÁÁÁ
ÁÁÁÁÁ
ÁÁÁÁÁ
16
ÎÎÎÎ
TA = 25°C
VDD = 10 V
VIC = 5 V
See Note A
14
1000
ÎÎ
VII – Maximum Input Voltage – V
V
IIB
I IO – Input Bias and
IIB and IIO
Input Offset Currents – pA
10000
MAXIMUM INPUT VOLTAGE
vs
SUPPLY VOLTAGE
IIB
100
ÎÎÎ
ÎÎÎ
IIO
10
1
12
10
8
6
4
2
0.1
25
35
45
55
65
75
85
0
95 105 115 125
0
2
TA – Free-Air Temperature – °C
NOTE A: The typical values of input bias current and input offset
current below 5 pA were determined mathematically.
6
8
14
16
SUPPLY CURRENT
vs
FREE-AIR TEMPERATURE
400
ÁÁÁÁÁ
ÁÁÁÁÁ
250
350
12
Figure 51
SUPPLY CURRENT
vs
SUPPLY VOLTAGE
VO = VDD/2
No Load
10
VDD – Supply Voltage – V
Figure 50
VO = VDD/2
No Load
225
TA = –55°C
200
300
– 40°C
250
0°C
200
25°C
ÁÁÁ
ÁÁÁ
150
70°C
100
125°C
50
IIDD
DD – Supply Current – mA
IIDD
DD – Supply Current – mA
4
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
175
150
VDD = 10 V
125
100
ÁÁ
ÁÁ
VDD = 5 V
75
50
25
0
0
2
4
6
8
10
12
VDD – Supply Voltage – V
14
16
0
– 75
– 50
Figure 52
– 25
0
25
50
75
100
TA – Free-Air Temperature – °C
125
Figure 53
† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
33
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
TYPICAL CHARACTERISTICS (MEDIUM-BIAS MODE)†
SLEW RATE
vs
SUPPLY VOLTAGE
ÁÁÁÁÁ
ÁÁÁÁÁ
ÁÁÁÁÁ
ÁÁÁÁÁ
ÁÁÁÁÁ
ÁÁÁÁÁ
0.9
0.6
0.5
0.7
VDD = 10 V
VI(PP) = 1 V
0.6
0.5
ÁÁÁÁ
ÁÁÁÁ
ÎÎÎÎÎÎÎÎÎÎ
ÁÁÁÁÁ
ÁÁÁÁÁ
0.4
0.4
VDD = 5 V
VI(PP) = 1 V
0.3
0.3
0
2
4
6
8
10
12
VDD – Supply Voltage – V
14
0.2
– 75
16
– 50
TA = 25°C
VI(SEL) = 1/2 VDD
– 210
– 180
– 150
–120
– 90
– 60
–30
0
0
2
4
6
8
10
12
VDD – Supply Voltage – V
14
16
VO(PP) – Maximum Peak-to-Peak Output Voltage – V
Bias-Select Current – nA
MAXIMUM PEAK-TO-PEAK OUTPUT VOLTAGE
vs
FREQUENCY
ÁÁÁÁÁ
ÁÁÁÁÁ
ÁÁÁÁÁ
– 240
125
Figure 55
BIAS-SELECT CURRENT
vs
SUPPLY VOLTAGE
– 270
VDD = 5 V
VI(PP) = 2.5 V
– 25
0
25
50
75
100
TA – Free-Air Temperature – °C
Figure 54
– 300
AV = 1
RL = 10 kΩ
CL = 20 pF
See Figure 99
VDD = 10 V
VI(PP) = 5.5 V
0.8
SR – Slew Rate – V/ µ s
0.7
ÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁ
ÎÎÎÎÎÎ
ÁÁÁÁÁ
ÎÎÎÎÎÎ
0.9
AV = 1
VI(PP) = 1 V
RL = 100 kΩ
CL = 20 pF
TA = 25°C
See Figure 99
0.8
SR – Slew Rate – V/ µ s
SLEW RATE
vs
FREE-AIR TEMPERATURE
10
ÎÎÎÎ
ÎÎÎÎ
9
VDD = 10 V
8
7
6
ÎÎÎÎ
ÎÎÎÎ
ÁÁÁÁ
ÁÁÁÁ
5
ÁÁÁÁ
ÁÁÁÁ
ÁÁÁÁ
TA = 125°C
TA = 25°C
TA = – 55°C
VDD = 5 V
4
3
RL = 100 kΩ
See Figure 99
2
1
0
1
Figure 56
10
100
f – Frequency – kHz
1000
Figure 57
† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
34
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
TYPICAL CHARACTERISTICS (MEDIUM-BIAS MODE)†
UNITY-GAIN BANDWIDTH
vs
SUPPLY VOLTAGE
UNITY-GAIN BANDWIDTH
vs
FREE-AIR TEMPERATURE
ÁÁÁÁÁÁ
ÁÁÁÁÁÁ
ÁÁÁÁÁÁ
ÁÁÁÁÁÁ
800
700
VI = 10 mV
CL = 20 pF
TA = 25°C
See Figure 101
750
600
500
400
300
– 75
ÁÁÁÁÁ
ÁÁÁÁÁ
ÁÁÁÁÁ
ÁÁÁÁÁ
800
VDD = 5 V
VI = 10 mV
CL = 20 pF
See Figure 101
B1
B1– Unity-Gain Bandwidth – MHz
B1
B1– Unity-Gain Bandwidth – MHz
900
700
650
600
550
500
450
400
– 50
– 25
0
25
50
75
100
TA – Free-Air Temperature – °C
0
125
2
4
6
8
10
12
VDD – Supply Voltage – V
14
16
Figure 59
Figure 58
LARGE-SIGNAL DIFFERENTIAL VOLTAGE
AMPLIFICATION AND PHASE SHIFT
vs
FREQUENCY
ÁÁÁÁÁ
ÁÁÁÁÁ
ÁÁÁÁÁ
ÁÁÁÁÁ
ÎÎÎ
ÎÎÎ
ÁÁ
ÁÁ
ÁÁ
VDD = 5 V
RL = 100 kΩ
TA = 25°C
106
105
104
0°
30°
AVD
103
102
60°
90°
Phase Shift
AVD
AVD– Large-Signal Differential
Voltage Amplification
107
Phase Shift
101
120°
1
150°
0.1
1
10
100
1k
10
f – Frequency – Hz
100 K
180°
1M
Figure 60
† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
35
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
TYPICAL CHARACTERISTICS (MEDIUM-BIAS MODE)†
LARGE-SIGNAL DIFFERENTIAL VOLTAGE
AMPLIFICATION AND PHASE SHIFT
vs
FREQUENCY
ÁÁÁÁÁ
ÁÁÁÁÁ
ÎÎÎÎÎ
ÁÁÁÁÁ
ÁÁÁÁÁ
ÎÎÎÎ
VDD = 10 V
RL = 100 kΩ
TA = 25°C
106
105
0°
104
30°
AVD
103
ÁÁ
ÁÁ
ÁÁ
60°
102
90°
Phase Shift
AVD
AVD– Large-Signal Differential
Voltage Amplification
107
Phase Shift
101
120°
1
150°
0.1
1
10
100
1k
10 k
f – Frequency – Hz
100 k
180°
1M
Figure 61
PHASE MARGIN
vs
SUPPLY VOLTAGE
PHASE MARGIN
vs
FREE-AIR TEMPERATURE
50°
45°
VI = 10 mV
CL = 20 pF
TA = 25°C
See Figure 100
43°
φm
m – Phase Margin
φm
m – Phase Margin
48°
VDD = 5 V
VI = 10 mV
CL = 20 pF
See Figure 100
46°
ÁÁ
ÁÁ
ÁÁ
41°
ÁÁ
ÁÁ
ÁÁ
44°
42°
39°
37°
40°
38°
0
2
4
6
8
10
12
VDD – Supply Voltage – V
14
16
35°
– 75
– 50
Figure 62
– 25
0
25
50
75
100
TA – Free-Air Temperature – °C
Figure 63
† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
36
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
125
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
TYPICAL CHARACTERISTICS (MEDIUM-BIAS MODE)†
44°
VDD = 5 V
VI = 10 mV
TA = 25°C
See Figure 100
φm
m – Phase Margin
42°
40°
EQUIVALENT INPUT NOISE VOLTAGE
vs
FREQUENCY
ÁÁÁ
ÁÁÁ
ÁÁÁ
38°
ÁÁ
ÁÁ
36°
34°
32°
30°
Vn
V n– Equivalent Input Noise Voltage –nV/
nV/Hz
Hz
PHASE MARGIN
vs
CAPACITIVE LOAD
300
VDD = 5 V
RS = 20 Ω
TA = 25°C
See Figure 99
250
200
150
100
50
0
28°
0
20
40
60
80
CL – Capacitive Load – pF
100
1
Figure 64
10
100
f – Frequency – Hz
1000
Figure 65
† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
37
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
LOW-BIAS MODE
electrical characteristics at specified free-air temperature (unless otherwise noted)
TLC271C, TLC271AC, TLC271BC
TEST
CONDITIONS
PARAMETER
Input offset voltage
TLC271AC
VDD = 5 V
MIN
TYP
MAX
25°C
TLC271C
VIO
TA†
VO = 1
1.4
4V
V,
VIC = 0 V,,
RS = 50 Ω,
RI = 1 MΩ
TLC271BC
1.1
Full range
VDD = 10 V
MIN
TYP
MAX
10
1.1
12
25°C
0.9
Full range
0.24
Full range
5
0.9
2
0.26
3
αVIO
IIO
Input offset current (see Note 4)
VO = VDD /2,,
VIC = VDD /2
25°C
0.1
60
0.1
60
70°C
7
300
8
300
IIB
Input bias current (see Note 4)
VO = VDD /2,,
VIC = VDD /2
25°C
0.6
60
0.7
60
70°C
40
600
50
600
VOH
VOL
AVD
CMRR
kSVR
II(SEL)
IDD
25°C
– 0.2
to
4
Full range
– 0.2
to
3.5
Common-mode input
voltage range (see Note 5)
High-level output voltage
Low-level output voltage
L
i
l diff
ti l
Large-signal
differential
voltage am
lification
amplification
Common-mode rejection ratio
VID = 100 mV,
V
RL= 1 MΩ
VID = –100
100 mV,
V
IOL = 0
MΩ
RL= 1 MΩ,
See Note 6
VIC = VICRmin
– 0.2
to
9
– 0.3
to
9.2
25°C
3.2
4.1
8
8.9
0°C
3
4.1
7.8
8.9
70°C
3
4.2
7.8
8.9
V
25°C
0
50
0
50
0°C
0
50
0
50
70°C
0
50
0
50
25°C
50
520
50
870
0°C
50
700
50
1030
70°C
50
380
50
660
25°C
65
94
65
97
0°C
60
95
60
97
70°C
60
95
60
97
25°C
70
97
70
97
0°C
60
97
60
97
70°C
60
98
60
98
dB
Input current (BIAS SELECT)
VI(SEL) = VDD
25°C
65
VO = VDD /2,
VIC = VDD /2,
N lload
No
d
25°C
10
17
14
23
0°C
12
21
18
33
70°C
8
14
11
20
• DALLAS, TEXAS 75265
mV
V/mV
VDD = 5 V to
t 10 V
VO = 1
1.4
4V
POST OFFICE BOX 655303
pA
V
Supply-voltage
S
l
lt
rejection
j ti ratio
ti
(∆VDD /∆VIO)
Supply current
pA
V
– 0.2
to
8.5
dB
95
† Full range is 0°C to 70°C.
NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically.
5. This range also applies to each input individually.
6. At VDD = 5 V, VO = 0.25 V to 2 V; at VDD = 10 V, VO = 1 V to 6 V.
38
µV/°C
1
– 0.3
to
4.2
mV
2
Average temperature coefficient of
input offset voltage
VICR
1.1
5
6.5
3
25°C to
70°C
10
12
6.5
25°C
UNIT
nA
µA
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
LOW-BIAS MODE
electrical characteristics at specified free-air temperature (unless otherwise noted)
TLC271I, TLC271AI, TLC271BI
TEST
CONDITIONS
PARAMETER
Input offset voltage
TLC271AI
VDD = 5 V
MIN
TYP
MAX
25°C
TLC271I
VIO
TA†
VO = 1
1.4
4V
V,
VIC = 0 V,,
RS = 50 Ω,
RL = 1 MΩ
TLC271BI
1.1
Full range
VDD = 10 V
MIN
TYP
MAX
10
1.1
13
25°C
0.9
Full range
0.24
Full range
5
0.9
2
0.26
3.5
αVIO
IIO
Input offset current (see Note 4)
VO = VDD /2,,
VIC = VDD /2
25°C
0.1
60
0.1
60
85°C
24
1000
26
1000
IIB
Input bias current (see Note 4)
VO = VDD /2,,
VIC = VDD /2
25°C
0.6
60
0.7
60
85°C
200
2000
220
2000
VOH
VOL
AVD
CMRR
kSVR
II(SEL)
IDD
25°C
– 0.2
to
4
Full range
– 0.2
to
3.5
Common-mode input
voltage range (see Note 5)
High-level output voltage
Low-level output voltage
L
i
l diff
ti l
Large-signal
differential
voltage am
lification
amplification
Common-mode rejection ratio
VID = 100 mV,
V
RL= 1 MΩ
VID = – 100 mV,
V
IOL = 0
RL= 1 MΩ
See Note 6
VIC = VICRmin
µV/°C
1
– 0.3
to
4.2
– 0.2
to
9
– 0.3
to
9.2
pA
pA
V
– 0.2
to
8.5
V
25°C
3
4.1
8
8.9
– 40°C
3
4.1
7.8
8.9
85°C
3
4.2
7.8
8.9
V
25°C
0
50
0
50
– 40°C
0
50
0
50
85°C
0
50
0
50
25°C
50
520
50
870
– 40°C
50
900
50
1550
85°C
50
330
50
585
25°C
65
94
65
97
– 40°C
60
95
60
97
85°C
60
95
60
98
25°C
70
97
70
97
– 40°C
60
97
60
97
85°C
60
98
60
98
mV
V/mV
dB
Supply-voltage
S
l
lt
rejection
j ti ratio
ti
(∆VDD /∆VIO)
VDD = 5 V to
t 10 V
VO = 1
1.4
4V
Input current (BIAS SELECT)
VI(SEL) = VDD
25°C
65
VO = VDD /2,
VIC = VDD /2,
N lload
No
d
25°C
10
17
14
23
– 40°C
16
27
25
43
85°C
17
13
10
18
Supply current
mV
2
Average temperature coefficient
of input offset voltage
VICR
1.1
5
7
3.5
25°C to
85°C
10
13
7
25°C
UNIT
dB
95
nA
µA
† Full range is – 40 to 85°C.
NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically.
5. This range also applies to each input individually.
6. At VDD = 5 V, VO = 0.25 V to 2 V; at VDD = 10 V, VO = 1 V to 6 V.
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
39
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
LOW-BIAS MODE
electrical characteristics at specified free-air temperature (unless otherwise noted)
TLC271M
PARAMETER
VIO
Input offset voltage
TEST
CONDITIONS
VO = 1.4 V,
VIC = 0 V,
25°C
RS = 50 Ω,
RL = 1 MΩ
Full range
αVIO
Average temperature coefficient
of input offset voltage
IIO
Input offset current (see Note 4)
VO = VDD /2,,
VIC = VDD /2
IIB
Input bias current (see Note 4)
VO = VDD /2,,
VIC = VDD /2
VICR
VOH
VOL
AVD
CMRR
TA†
Low-level output voltage
L
i
l diff
ti l
Large-signal
differential
voltage am
lification
amplification
Common-mode rejection ratio
1.1
VDD = 10 V
MIN
TYP
MAX
10
1.1
10
12
12
25°C to
125°C
1.4
25°C
0.1
60
0.1
60
pA
125°C
1.4
15
1.8
15
nA
25°C
0.6
60
0.7
60
pA
125°C
9
35
10
35
nA
25°C
0
to
4
Full range
0
to
3.5
25°C
3.2
4.1
8
8.9
– 55°C
3
4.1
7.8
8.8
125°C
3
4.2
7.8
9
VID = 100 mV,
V
RL= 1 MΩ
VID = – 100 mV,
V
IOL = 0
RL= 1 MΩ
MΩ,
See Note 6
VIC = VICRmin
µV/°C
1.4
– 0.3
to
4.2
0
to
9
– 0.3
to
9.2
V
0
to
8.5
V
V
25°C
0
50
0
50
– 55°C
0
50
0
50
125°C
0
50
0
50
25°C
50
520
50
870
– 55°C
25
1000
25
1775
125°C
25
200
25
380
25°C
65
94
65
97
– 55°C
60
95
60
97
125°C
60
85
60
91
25°C
70
97
70
97
– 55°C
60
97
60
97
125°C
60
98
60
98
dB
VDD = 5 V to
t 10 V
VO = 1
1.4
4V
Input current (BIAS SELECT)
VI(SEL) = VDD
25°C
65
VO = VDD /2,
VIC = VDD /2,
N lload
No
d
25°C
10
17
14
23
– 55°C
17
30
28
48
125°C
7
12
9
† Full range is – 55°C to 125°C.
NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically.
5. This range also applies to each input individually.
6. At VDD = 5 V, VO = 0.25 V to 2 V; at VDD = 10 V, VO = 1 V to 6 V.
15
II(SEL)
IDD
40
Supply current
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
mV
V/mV
Supply-voltage
S
l
lt
rejection
j ti ratio
ti
(∆VDD /∆VIO)
kSVR
UNIT
mV
Common-mode input
voltage range (see Note 5)
High-level output voltage
VDD = 5 V
MIN
TYP
MAX
dB
95
nA
µA
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
LOW-BIAS MODE
operating characteristics at specified free-air temperature, VDD = 5 V
PARAMETER
TEST CONDITIONS
TA
TLC271C, TLC271AC,
TLC271BC
MIN
VI(PP)
( )=1V
SR
Slew rate at unity gain
RL = 1 MΩ,
CL = 20 pF,
pF
See Figure 98
VI(PP)
( ) = 2.5 V
Vn
BOM
B1
φm
Equivalent input noise voltage
f = 1 kHz,
See Figure 99
RS = 20 Ω,
Maximum output-swing bandwidth
VO = VOH,
RL = 1 MΩ
MΩ,
CL = 20 pF,
F
See Figure 98
VI = 10 mV,
V
See Figure 100
CL = 20 pF,
F
Unity-gain bandwidth
Phase margin
VI = 10 mV,
mV
CL = 20 pF
F,
f = B1,
See Figure 100
TYP
25°C
0.03
0°C
0.04
70°C
0.03
25°C
0.03
0°C
0.03
70°C
0.02
25°C
68
25°C
5
0°C
6
70°C
4.5
25°C
85
0°C
100
70°C
65
25°C
34°
0°C
36°
70°C
30°
UNIT
MAX
V/µs
nV/√Hz
kHz
kHz
operating characteristics at specified free-air temperature, VDD = 10 V
PARAMETER
TEST CONDITIONS
TA
TLC271C, TLC271AC,
TLC271BC
MIN
VI(PP)
( )=1V
SR
Slew rate at unity gain
RL = 1 MΩ,
CL = 20 pF,
pF
See Figure 98
VI(PP)
( ) = 5.5 V
Vn
BOM
B1
φm
Equivalent input noise voltage
f = 1 kHz,
See Figure 99
RS = 20 Ω,
Maximum output-swing bandwidth
VO = VOH,
RL = 1 MΩ
MΩ,
CL = 20 pF,
F
See Figure 98
mV
VI = 10 mV,
See Figure 100
F
CL = 20 pF,
VI = 10 mV,
mV
CL = 20 pF
F,
f = B1,
See Figure 100
Unity-gain bandwidth
Phase margin
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
TYP
25°C
0.05
0°C
0.05
70°C
0.04
25°C
0.04
0°C
0.05
70°C
0.04
25°C
68
25°C
1
0°C
1.3
70°C
0.9
25°C
110
0°C
125
70°C
90
25°C
38°
0°C
40°
70°C
34°
UNIT
MAX
V/µs
nV/√Hz
kHz
kHz
41
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
LOW-BIAS MODE
operating characteristics at specified free-air temperature, VDD = 5 V
PARAMETER
TEST CONDITIONS
TA
TLC271I, TLC271AI,
TLC271BI
MIN
VI(PP)
( )=1V
SR
Slew rate at unity gain
RL = 1 MΩ,
CL = 20 pF,
pF
See Figure 98
VI(PP)
( ) = 2.5 V
Vn
BOM
B1
φm
Equivalent input noise voltage
f = 1 kHz,
See Figure 99
RS = 20 Ω,
Maximum output-swing bandwidth
VO = VOH,
RL = 1 MΩ
MΩ,
CL = 20 pF,
F
See Figure 98
VI = 10 mV,
V
See Figure 100
CL = 20 pF,
F
Unity-gain bandwidth
Phase margin
VI = 10 mV,
mV
CL = 20 pF
F,
f = B1,
See Figure 100
TYP
25°C
0.03
– 40°C
0.04
85°C
0.03
25°C
0.03
– 40°C
0.04
85°C
0.02
25°C
68
25°C
5
– 40°C
7
85°C
4
25°C
85
– 40°C
130
85°C
55
25°C
34°
– 40°C
38°
85°C
28°
UNIT
MAX
V/µs
nV/√Hz
kHz
MHz
operating characteristics at specified free-air temperature, VDD = 10 V
PARAMETER
TEST CONDITIONS
TA
TLC271C, TLC271AC,
TLC271BC
MIN
VI(PP)
( )=1V
SR
Slew rate at unity gain
RL = 1 MΩ,
CL = 20 pF,
pF
See Figure 98
VI(PP)
( ) = 5.5 V
Vn
BOM
B1
φm
42
Equivalent input noise voltage
f = 1 kHz,
See Figure 99
RS = 20 Ω,
Maximum output-swing bandwidth
VO = VOH,
RL = 1 MΩ
MΩ,
CL = 20 pF,
F
See Figure 98
VI = 10 mV,
V
See Figure 100
F
CL = 20 pF,
Unity-gain bandwidth
Phase margin
VI = 10 mV,l
mV l
CL = 20 pF
F,
POST OFFICE BOX 655303
f = B1,
See Figure 100
• DALLAS, TEXAS 75265
TYP
25°C
0.05
– 40°C
0.06
85°C
0.03
25°C
0.04
– 40°C
0.05
85°C
0.03
25°C
68
25°C
1
– 40°C
1.4
85°C
0.8
25°C
110
– 40°C
155
85°C
80
25°C
38°
– 40°C
42°
85°C
32°
UNIT
MAX
V/µs
nV/√Hz
kHz
MHz
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
LOW-BIAS MODE
operating characteristics at specified free-air temperature, VDD = 5 V
PARAMETER
TEST CONDITIONS
VI(PP)
( )=1V
SR
Slew rate at unity gain
RL = 1 MΩ,
CL = 20 pF,
pF
See Figure 98
VI(PP)
( ) = 2.5 V
Vn
Equivalent input noise voltage
f = 1 kHz,
See Figure 99
RS = 20 Ω,
BOM
Maximum output-swing bandwidth
VO = VOH,
RL = 1 MΩ
MΩ,
CL = 20 pF,
F
See Figure 98
VI = 10 mV,
V
See Figure 100
CL = 20 pF,
F
B1
φm
Unity-gain bandwidth
Phase margin
mV
VI = 10 mV,
CL = 20 pF
F,
f = B1,
See Figure 100
TA
TLC271M
MIN
TYP
25°C
0.03
– 55°C
0.04
125°C
0.02
25°C
0.03
– 55°C
0.04
125°C
0.02
25°C
68
25°C
5
– 55°C
8
125°C
3
25°C
85
– 55°C
140
125°C
45
25°C
34°
– 55°C
39°
125°C
25°
MAX
UNIT
V/µs
nV/√Hz
kHz
kHz
operating characteristics at specified free-air temperature, VDD = 10 V
PARAMETER
TEST CONDITIONS
VI(PP)
( )=1V
SR
Slew rate at unity gain
RL = 1 MΩ,
CL = 20 pF,
pF
See Figure 98
VI(PP)
( ) = 5.5 V
Vn
Equivalent input noise voltage
f = 1 kHz,
See Figure 99
BOM
Maximum output-swing bandwidth
VO = VOH,
RL = 1 MΩ
MΩ,
B1
φm
Unity-gain bandwidth
Phase margin
VI = 10 mV,
V
See Figure 100
mV
VI = 10 mV,
CL = 20 pF
F,
POST OFFICE BOX 655303
RS = 20 Ω,
CL = 20 pF,
F
See Figure 98
CL = 20 pF,
F
f = B1,
See Figure 100
• DALLAS, TEXAS 75265
TA
TLC271M
MIN
TYP
25°C
0.05
– 55°C
0.06
125°C
0.03
25°C
0.04
– 55°C
0.06
125°C
0.03
25°C
68
25°C
1
– 55°C
1.5
125°C
0.7
25°C
110
– 55°C
165
125°C
70
25°C
38°
– 55°C
43°
125°C
29°
MAX
UNIT
V/µs
nV/√Hz
kHz
kHz
43
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
TYPICAL CHARACTERISTICS (LOW-BIAS MODE)
Table of Graphs
FIGURE
44
VIO
αVIO
Input offset voltage
Distribution
66, 67
Temperature coefficient
Distribution
68, 69
VOH
High-level
g
output voltage
g
High-level
output
vs High
level out
ut current
vs Supply
y voltage
g
vs Free-air temperature
70, 71
72
73
VOL
Low level output voltage
Low-level
vs Common-mode
Common mode input
in ut voltage
vs Differential input voltage
g
vs Free-air temperature
vs Low-level output current
74, 75
76
77
78, 79
AVD
Large-signal
g
g
differential voltage
g amplification
vs Supply
Su ly voltage
vs Free-air temperature
vs Frequency
80
81
92, 93
IIB
IIO
Input bias current
vs Free-air temperature
82
Input offset current
vs Free-air temperature
82
VI
Maximum input voltage
vs Supply voltage
83
IDD
Supply current
vs Supplyy voltage
g
vs Free-air temperature
84
85
SR
Slew rate
vs Supply
y voltage
g
vs Free-air temperature
86
87
Bias-select current
vs Supply voltage
88
VO(PP)
Maximum peak-to-peak output voltage
vs Frequency
89
B1
Unity gain bandwidth
Unity-gain
vs Free-air temperature
vs Supply voltage
90
91
φm
Phase margin
g
vs Supply
Su ly voltage
vs Free-air temperature
vs Capacitive load
94
95
96
Vn
Equivalent input noise voltage
vs Frequency
97
Phase shift
vs Frequency
92, 93
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
TYPICAL CHARACTERISTICS (LOW-BIAS MODE)†
DISTRIBUTION OF TLC271
INPUT OFFSET VOLTAGE
Percentage of Units – %
60
ÎÎÎÎÎÎÎÎÎÎÎÎ
70
905 Amplifiers Tested From 6 Wafer Lots
VDD = 5 V
TA = 25°C
P Package
50
40
30
20
50
40
30
20
10
10
0
905 Amplifiers Tested From 6 Wafer Lots
VDD = 10 V
TA = 25°C
P Package
60
Percentage of Units – %
70
DISTRIBUTION OF TLC271
INPUT OFFSET VOLTAGE
–5
–4
–3 –2 –1 0
1
2
3
VIO – Input Offset Voltage – mV
4
0
5
–5
–4
DISTRIBUTION OF TLC271
INPUT OFFSET VOLTAGE
TEMPERATURE COEFFICIENT
70
356 Amplifiers Tested From 8 Wafer Lots
VDD = 5 V
TA = 25°C to 125°C
P Package
Outliers:
(1) 19.2 µV/°C
(1) 12.1 µV/°C
60
Percentage of Units – %
Percentage of Units – %
5
DISTRIBUTION OF TLC271
INPUT OFFSET VOLTAGE
TEMPERATURE COEFFICIENT
70
50
4
Figure 67
Figure 66
60
–3 –2 –1 0
1
2
3
VIO – Input Offset Voltage – mV
40
30
20
10
50
40
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
356 Amplifiers Tested From 8 Wafer Lots
VDD = 10 V
TA = 25°C to 125°C
P Package
Outliers:
(1) 18.7 µV/°C
(1) 11.6 µV/°C
30
20
10
0
– 10 – 8
–6
–4
–2
0
2
4
6
8
10
αVIO – Temperature Coefficient – µV/°C
0
2
4
6
8
– 10 – 8 – 6 – 4 – 2 0
αVIO – Temperature Coefficient – µV/°C
Figure 68
10
Figure 69
† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
45
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
TYPICAL CHARACTERISTICS (LOW-BIAS MODE)†
HIGH-LEVEL OUTPUT VOLTAGE
vs
HIGH-LEVEL OUTPUT CURRENT
HIGH-LEVEL OUTPUT VOLTAGE
vs
HIGH-LEVEL OUTPUT CURRENT
16
5
4
VDD = 5 V
3
VDD = 4 V
ÁÁÁ
ÁÁÁ
ÁÁÁ
VDD = 3 V
2
0
0
VDD = 16 V
12
10
8
VDD = 10 V
ÁÁ
ÁÁ
ÁÁ
1
–2
–4
–6
–8
IOH – High-Level Output Current – mA
VID = 100 mV
TA = 25°C
14
V
VOH–
OH High-Level Output Voltage – V
VOH High-Level Output Voltage – V
VOH–
VID = 100 mV
TA = 25°C
6
4
2
0
0
– 10
– 5 – 10 – 15 – 20 – 25 – 30 – 35
IOH – High-Level Output Current – mA
Figure 71
Figure 70
HIGH-LEVEL OUTPUT VOLTAGE
vs
FREE-AIR TEMPERATURE
HIGH-LEVEL OUTPUT VOLTAGE
vs
SUPPLY VOLTAGE
– 1.6
VID = 100 mV
RL = 1 MΩ
TA = 25°C
14
V
VOH–
OH High-Level Output Voltage – V
V
VOH–
OH High-Level Output Voltage – V
16
12
10
ÁÁ
ÁÁ
ÁÁ
8
6
2
0
2
4
6
8
10
12
VDD – Supply Voltage – V
14
16
IOH = – 5 mA
VID = 100 mV
– 1.7
VDD = 5 V
– 1.8
– 1.9
–2
VDD = 10 V
– 2.1
ÁÁ
ÁÁ
ÁÁ
4
0
– 2.2
– 2.3
– 2.4
– 75
– 50
Figure 72
– 25
0
25
50
75
100
TA – Free-Air Temperature – °C
Figure 73
† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
46
– 40
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
125
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
TYPICAL CHARACTERISTICS (LOW-BIAS MODE)†
LOW-LEVEL OUTPUT VOLTAGE
vs
COMMON-MODE INPUT VOLTAGE
LOW-LEVEL OUTPUT VOLTAGE
vs
COMMON-MODE INPUT VOLTAGE
ÁÁ
ÁÁ
500
VDD = 5 V
IOL = 5 mA
TA = 25°C
650
VOL
VOL – Low-Level Output Voltage – mV
VOL
VOL – Low-Level Output Voltage – mV
700
600
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
550
VID = – 100 mV
500
450
450
400
VID = – 100 mV
VID = – 1 V
350
VID = – 2.5 V
ÁÁÁ
ÁÁÁ
400
VID = – 1 V
350
300
250
300
0
VDD = 10 V
IOL = 5 mA
TA = 25°C
1
2
3
VIC – Common-Mode Input Voltage – V
4
0
1
3
5
7
9
2
4
6
8
VIC – Common-Mode Input Voltage – V
Figure 75
Figure 74
LOW-LEVEL OUTPUT VOLTAGE
vs
DIFFERENTIAL INPUT VOLTAGE
LOW-LEVEL OUTPUT VOLTAGE
vs
FREE-AIR TEMPERATURE
900
IOL = 5 mA
VIC = VID/2
TA = 25°C
700
VOL
VOL – Low-Level Output Voltage – mV
VOL
VOL – Low-Level Output Voltage – mV
800
ÁÁ
ÁÁ
ÁÁ
10
600
ÎÎÎÎ
ÎÎÎÎ
500
VDD = 5 V
400
300
VDD = 10 V
200
100
0
0
–1
ÁÁ
ÁÁ
ÁÁ
– 2 –3 – 4 – 5 – 6 – 7 – 8 – 9 – 10
VID – Differential Input Voltage – V
800
IOL = 5 mA
VID = – 1 V
VIC = 0.5 V
700
ÎÎÎÎ
VDD = 5 V
600
500
ÎÎÎÎÎ
ÎÎÎÎÎ
400
VDD = 10 V
300
200
100
0
– 75
– 50
Figure 76
– 25
0
25
50
75
100
TA – Free-Air Temperature – °C
125
Figure 77
† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
47
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
TYPICAL CHARACTERISTICS (LOW-BIAS MODE)†
LOW-LEVEL OUTPUT VOLTAGE
vs
LOW-LEVEL OUTPUT CURRENT
1
3
0.8
VOL
VOL – Low-Level Output Voltage – V
VID = – 1 V
VIC = 0.5 V
TA = 25°C
0.9
VOL
VOL – Low-Level Output Voltage – V
LOW-LEVEL OUTPUT VOLTAGE
vs
LOW-LEVEL OUTPUT CURRENT
VDD = 5 V
0.7
VDD = 4 V
0.6
VDD = 3 V
0.5
ÁÁ
ÁÁ
ÁÁ
0.4
0.3
2.5
0.1
0
0
1
2
3
4
5
6
7
VDD = 16 V
2
VDD = 10 V
1.5
ÁÁ
ÁÁ
0.2
VID = – 1 V
VIC = 0.5 V
TA = 25°C
1
0.5
0
8
0
5
10
15
20
25
IOL – Low-Level Output Current – mA
IOL – Low-Level Output Current – mA
Figure 78
Figure 79
LARGE-SIGNAL
DIFFERENTIAL VOLTAGE AMPLIFICATION
vs
FREE-AIR TEMPERATURE
LARGE-SIGNAL
DIFFERENTIAL VOLTAGE AMPLIFICATION
vs
SUPPLY VOLTAGE
ÎÎÎÎÎ
ÎÎÎÎÎ
AVD
AVD– Large-Signal Differential
Voltage Amplification – V/mV
TA = – 55°C
1600
1400
TA = 0°C
1200
ÁÁ
ÁÁ
ÁÁ
ÁÁ
ÁÁ
70°C
800
85°C
600
400
1600
1400
ÎÎÎ
ÎÎÎ
ÎÎÎÁÁ
ÁÁ
ÁÁ
ÁÁ
ÁÁ
25°C
1000
RL = 1 MΩ
1800
– 40°C
AVD
AVD– Large-Signal Differential
Voltage Amplification – V/mV
RL = 1 MΩ
ÎÎÎÎÎ
ÎÎÎÎÎ
2000
2000
1800
VDD = 10 V
1200
1000
800
600
VDD = 5 V
400
125°C
200
0
0
2
4
6
8
10
12
VDD – Supply Voltage – V
14
16
200
0
– 75
– 50
Figure 80
– 25
0
25
50
75
100
TA – Free-Air Temperature – °C
Figure 81
† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
48
30
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
125
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
TYPICAL CHARACTERISTICS (LOW-BIAS MODE)†
INPUT BIAS CURRENT AND INPUT OFFSET
CURRENT
vs
FREE-AIR TEMPERATURE
ÁÁÁÁ
ÁÁÁÁ
ÁÁÁÁ
IIB
I IO – Input Bias and
IIB and IIO
Input Offset Currents – pA
1000
ÎÎÎÎ
ÎÎÎÎ
16
VDD = 10 V
VIC = 5 V
See Note A
TA = 25°C
14
ÎÎ
ÎÎ
IIB
100
VII – Maximum Input Voltage – V
V
10000
MAXIMUM INPUT VOLTAGE
vs
SUPPLY VOLTAGE
ÎÎ
ÎÎ
IIO
10
1
12
10
8
6
4
2
0.1
25
35
45
55
65
75
85
0
95 105 115 125
0
2
TA – Free-Air Temperature – °C
NOTE A: The typical values of input bias current and input offset
current below 5 pA were determined mathematically.
6
8
10
16
SUPPLY CURRENT
vs
FREE-AIR TEMPERATURE
30
45
VO = VDD/2
No Load
TA = – 55°C
VO = VDD/2
No Load
ÎÎÎ
35
– 40°C
30
25
0°C
ÎÎÎ
20
ÁÁ
ÁÁ
25°C
15
70°C
10
125°C
5
2
4
6
8
10
12
VDD – Supply Voltage – V
14
mA
A
IIDD
DD – Supply Current – µ
25
mA
A
IIDD
DD – Supply Current – µ
14
Figure 83
SUPPLY CURRENT
vs
SUPPLY VOLTAGE
0
0
12
VDD – Supply Voltage – V
Figure 82
40
4
ÁÁ
ÁÁ
16
20
VDD = 10 V
15
10
VDD = 5 V
5
0
– 75
– 50
Figure 84
– 25
0
25
50
75
100
TA – Free-Air Temperature – °C
125
Figure 85
† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
49
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
TYPICAL CHARACTERISTICS (LOW-BIAS MODE)†
SLEW RATE
vs
SUPPLY VOLTAGE
0.07
0.07
AV = 1
VI(PP) = 1 V
RL = 1 MΩ
CL = 20 pF
TA= 25°C
See Figure 98
0.05
VDD = 10 V
VI(PP) = 5.5 V
0.06
SR – Slew Rate – V/sµ s
0.06
SR – Slew Rate – V/sµ s
SLEW RATE
vs
FREE-AIR TEMPERATURE
0.04
0.03
0.02
0.01
0.05
VDD = 10 V
VI(PP) = 1 V
0.04
0.03
VDD = 5 V
VI(PP) = 1 V
0.02
VDD = 5 V
VI(PP) = 2.5 V
0.01
0.00
0
2
4
6
8
10
12
VDD – Supply Voltage – V
14
16
0.00
– 75
– 50
Figure 86
VO(PP) – Maximum Peak-to-Peak Output Voltage – V
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
TA = 25°C
VI(SEL) = VDD
Bias-Select Current – nA
120
105
90
75
60
45
30
15
0
2
4
6
8
10
12
VDD – Supply Voltage – V
14
16
10
ÁÁ
9
8
VDD = 10 V
7
6
5
ÁÁÁÁ
ÁÁÁÁ
ÁÁÁÁ
TA = 125°C
TA = 25°C
TA = –55°C
VDD = 5 V
4
ÁÁÁÁÁ
ÁÁÁÁÁ
ÁÁÁÁÁ
3
RL = 1 MΩ
See Figure 98
2
1
0
0.1
Figure 88
1
10
f – Frequency – kHz
Figure 89
† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
50
125
MAXIMUM PEAK-TO-PEAK OUTPUT VOLTAGE
vs
FREQUENCY
150
0
– 25
0
25
50
75
100
TA – Free-Air Temperature – °C
Figure 87
BIAS-SELECT CURRENT
vs
SUPPLY VOLTAGE
135
RL = 1 MΩ
CL = 20 pF
AV = 1
See Figure 98
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
100
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
TYPICAL CHARACTERISTICS (LOW-BIAS MODE)†
UNITY-GAIN BANDWIDTH
vs
FREE-AIR TEMPERATURE
140
VDD = 5 V
VI = 10 mV
CL = 20 pF
See Figure 100
130
130
B1
B1 – Unity-Gain Bandwidth – kHz
B1
B1 – Unity-Gain Bandwidth – kHz
150
UNITY-GAIN BANDWIDTH
vs
SUPPLY VOLTAGE
110
90
70
50
120
110
VI = 10 mV
CL = 20 pF
TA = 25°C
See Figure 100
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
100
90
80
70
60
30
– 75
50
– 50
– 25
0
25
50
75
100
TA – Free-Air Temperature – °C
125
0
2
4
6
8
10
12
VDD – Supply Voltage – V
14
16
Figure 91
Figure 90
LARGE-SIGNAL DIFFERENTIAL VOLTAGE
AMPLIFICATION AND PHASE SHIFT
vs
FREQUENCY
107
VDD = 5 V
RL = 1 MΩ
TA = 25°C
ÁÁ
ÁÁ
ÁÁ
105
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
104
0°
30°
AVD
103
102
60°
90°
Phase Shift
AVD
AVD – Large-Signal Differential
Voltage Amplification
106
Phase Shift
101
120°
1
0.1
150°
1
10
100
1k
10 k
f – Frequency – Hz
100 k
180°
1M
Figure 92
† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
51
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
TYPICAL CHARACTERISTICS (LOW-BIAS MODE)†
LARGE-SIGNAL DIFFERENTIAL VOLTAGE
AMPLIFICATION AND PHASE SHIFT
vs
FREQUENCY
107
VDD = 10 V
RL = 1 MΩ
TA = 25°C
ÁÁ
ÁÁ
105
0°
ÎÎÎÎ
104
30°
AVD
103
60°
ÎÎÎÎÎ
ÎÎÎÎÎ
102
90°
Phase Shift
AVD
AVD – Large-Signal Differential
Voltage Amplification
106
Phase Shift
101
1
0.1
1
10
120°
150°
100
1k
10 k
f – Frequency – Hz
100 k
180°
1M
Figure 93
PHASE MARGIN
vs
SUPPLY VOLTAGE
PHASE MARGIN
vs
FREE-AIR TEMPERATURE
42°
40°
VI = 10 mV
CL = 20 pF
TA = 25°C
See Figure 100
ÁÁ
ÁÁ
36°
38°
φm
m – Phase Margin
φm
m – Phase Margin
40°
VDD = 5 mV
VI = 10 mV
CL = 20 pF
See Figure 100
38°
36°
34°
32°
30°
ÁÁ
ÁÁ
34°
28°
26°
24°
32°
22°
30°
0
2
4
6
8
10
12
VDD – Supply Voltage – V
14
16
20°
– 75
– 50
– 25
0
25
50
75
100
TA – Free-Air Temperature – °C
125
Figure 95
Figure 94
† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
52
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
TYPICAL CHARACTERISTICS (LOW-BIAS MODE)†
37°
VDD = 5 mV
VI = 10 mV
TA = 25°C
See Figure 100
φm
m – Phase Margin
35°
33°
ÁÁ
ÁÁ
ÁÁ
ÁÁ
31°
ÁÁ
ÁÁ
29°
27°
25°
0
10
20
30 40 50 60 70 80
CL – Capacitive Load – pF
90 100
VN
nV/ Hz
V n – Equivalent Input Noise Voltage – nV/Hz
PHASE MARGIN
vs
CAPACITIVE LOAD
EQUIVALENT INPUT NOISE VOLTAGE
vs
FREQUENCY
ÁÁÁÁÁ
ÁÁÁÁÁ
ÁÁÁÁÁ
ÎÎÎÎÎ
ÁÁÁÁÁ
200
VDD = 5 V
RS = 20Ω
TA = 25°C
See Figure 99
175
150
125
100
75
50
25
0
1
Figure 96
10
100
f – Frequency – Hz
1000
Figure 97
† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
53
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
PARAMETER MEASUREMENT INFORMATION
single-supply versus split-supply test circuits
Because the TLC271 is optimized for single-supply operation, circuit configurations used for the various tests
often present some inconvenience since the input signal, in many cases, must be offset from ground. This
inconvenience can be avoided by testing the device with split supplies and the output load tied to the negative
rail. A comparison of single-supply versus split-supply test circuits is shown below. The use of either circuit gives
the same result.
VDD
VDD +
–
–
VO
VO
+
CL
+
VI
VI
RL
CL
RL
VDD –
(a) SINGLE SUPPLY
(b) SPLIT SUPPLY
Figure 98. Unity-Gain Amplifier
2 kΩ
2 kΩ
VDD
20 Ω
VDD +
–
–
1/2 VDD
VO
VO
+
+
20 Ω
20 Ω
20 Ω
VDD –
(a) SINGLE SUPPLY
(b) SPLIT SUPPLY
Figure 99. Noise-Test Circuit
10 kΩ
VDD
VDD +
100 Ω
–
100 Ω
–
VI
10 kΩ
VI
VO
VO
+
+
1/2 VDD
CL
CL
VDD –
(a) SINGLE SUPPLY
(b) SPLIT SUPPLY
Figure 100. Gain-of-100 Inverting Amplifier
54
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
PARAMETER MEASUREMENT INFORMATION
input bias current
Because of the high input impedance of the TLC271 operational amplifiers, attempts to measure the input bias
current can result in erroneous readings. The bias current at normal room ambient temperature is typically less
than 1 pA, a value that is easily exceeded by leakages on the test socket. Two suggestions are offered to avoid
erroneous measurements:
1. Isolate the device from other potential leakage sources. Use a grounded shield around and between the
device inputs (see Figure 101). Leakages that would otherwise flow to the inputs are shunted away.
2. Compensate for the leakage of the test socket by actually performing an input bias current test (using a
picoammeter) with no device in the test socket. The actual input bias current can then be calculated by
subtracting the open-socket leakage readings from the readings obtained with a device in the test socket.
One word of caution: many automatic testers as well as some bench-top operational amplifier testers us the
servo-loop technique with a resistor in series with the device input to measure the input bias current (the voltage
drop across the series resistor is measured and the bias current is calculated). This method requires that a
device be inserted into the test socket to obtain a correct reading; therefore, an open-socket reading is not
feasible using this method.
8
5
V = VIC
1
4
Figure 101. Isolation Metal Around Device inputs (JG and P packages)
low-level output voltage
To obtain low-supply-voltage operation, some compromise is necessary in the input stage. This compromise
results in the device low-level output being dependent on both the common-mode input voltage level as well
as the differential input voltage level. When attempting to correlate low-level output readings with those quoted
in the electrical specifications, these two conditions should be observed. If conditions other than these are to
be used, please refer to the Typical Characteristics section of this data sheet.
input offset voltage temperature coefficient
Erroneous readings often result from attempts to measure temperature coefficient of input offset voltage. This
parameter is actually a calculation using input offset voltage measurements obtained at two different
temperatures. When one (or both) of the temperatures is below freezing, moisture can collect on both the device
and the test socket. This moisture results in leakage and contact resistance which can cause erroneous input
offset voltage readings. The isolation techniques previously mentioned have no effect on the leakage since the
moisture also covers the isolation metal itself, thereby rendering it useless. It is suggested that these
measurements be performed at temperatures above freezing to minimize error.
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PARAMETER MEASUREMENT INFORMATION
full-power response
Full-power response, the frequency above which the amplifier slew rate limits the output voltage swing, is often
specified two ways: full-linear response and full-peak response. The full-linear response is generally
measuredby monitoring the distortion level of the output while increasing the frequency of a sinusoidal input
signal until the maximum frequency is found above which the output contains significant distortion. The full-peak
response is defined as the maximum output frequency, without regard to distortion, above which full
peak-to-peak output swing cannot be maintained.
Because there is no industry-wide accepted value for significant distortion, the full-peak response is specified
in this data sheet and is measured using the circuit of Figure 98. The initial setup involves the use of a sinusoidal
input to determine the maximum peak-to-peak output of the device (the amplitude of the sinusoidal wave is
increased until clipping occurs). The sinusoidal wave is then replaced with a square wave of the same
amplitude. The frequency is then increased until the maximum peak-to-peak output can no longer be maintained
(Figure 102). A square wave is used to allow a more accurate determination of the point at which the maximum
peak-to-peak output is reached.
(a) f = 100 Hz
(b) BOM > f > 100 Hz
(c) f = BOM
(d) f > BOM
Figure 102. Full-Power-Response Output Signal
test time
Inadequate test time is a frequent problem, especially when testing CMOS devices in a high-volume,
short-test-time environment. Internal capacitances are inherently higher in CMOS than in bipolar and BiFET
devices, and require longer test times than their bipolar and BiFET counterparts. The problem becomes more
pronounced with reduced supply levels and lower temperatures.
APPLICATION INFORMATION
VDD
single-supply operation
R4
POST OFFICE BOX 655303
VI
R2
VO
+
56
R1
–
While the TLC271 performs well using dual power
supplies (also called balanced or split supplies),
the design is optimized for single-supply
operation. This includes an input common mode
voltage range that encompasses ground as well
as an output voltage range that pulls down to
ground. The supply voltage range extends down
to 3 V (C-suffix types), thus allowing operation
with supply levels commonly available for TTL and
HCMOS; however, for maximum dynamic range,
16-V single-supply operation is recommended.
Vref
V
R3
C
0.01 µF
ref
V
O
+ VDD R1 R3
) R3
+ (Vref * VI) R4
) Vref
R2
Figure 103. Inverting Amplifier With Voltage
Reference
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APPLICATION INFORMATION
single-supply operation (continued)
Many single-supply applications require that a voltage be applied to one input to establish a reference level that
is above ground. A resistive voltage divider is usually sufficient to establish this reference level (see Figure 103).
The low input bias current consumption of the TLC271 permits the use of very large resistive values to
implement the voltage divider, thus minimizing power consumption.
The TLC271 works well in conjunction with digital logic; however, when powering both linear devices and digital
logic from the same power supply, the following precautions are recommended:
1. Power the linear devices from separate bypassed supply lines (see Figure 104); otherwise, the linear device
supply rails can fluctuate due to voltage drops caused by high switching currents in the digital logic.
2. Use proper bypass techniques to reduce the probability of noise-induced errors. Single capacitive
decoupling is often adequate; however, RC decoupling may be necessary in high-frequency applications.
–
OUT
Logic
Logic
Logic
Power
Supply
+
(a) COMMON SUPPLY RAILS
–
+
OUT
Logic
Logic
Logic
Power
Supply
(b) SEPARATE BYPASSED SUPPLY RAILS (preferred)
Figure 104. Common Versus Separate Supply Rails
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APPLICATION INFORMATION
input offset voltage nulling
The TLC271 offers external input offset null control. Nulling of the input off set voltage may be achieved by
adjusting a 25-kΩ potentiometer connected between the offset null terminals with the wiper Connected as
shown in Figure 105. The amount of nulling range varies with the bias selection. In the high-bias mode, the
nulling range allows the maximum offset voltage specified to be trimmed to zero. In low-bias and medium-bias
modes, total nulling may not be possible.
ÏÏÏÏ
ÏÏÏÏ
ÏÏÏÏ
ÏÏÏÏ
–
IN –
VDD
N1
OUT
N2
+
IN +
IN –
IN +
25 kΩ
ÏÏÏÏ
ÏÏÏÏ
ÏÏÏÏ
ÏÏÏÏ
–
OUT
N2
+
25 kΩ
N1
GND
(a) SINGLE SUPPLY
(b) SPLIT SUPPLY
Figure 105. Input Offset Voltage Null Circuit
bias selection
Bias selection is achieved by connecting the bias select pin to one of the three voltage levels (see Figure 106).
For medium-bias applications, R is recommended that the bias select pin be connected to the mid-point
between the supply rails. This is a simple procedure in split-supply applications, since this point is ground. In
single-supply applications, the medium-bias mode necessitates using a voltage divider as indicated. The use
of large-value resistors in the voltage divider reduces the current drain of the divider from the supply line.
However, large-value resistors used in conjunction with a large-value capacitor requires significant time to
charge up to the supply midpoint after the supply is switched on. A voltage other than the midpoint may be used
if it is within the voltages specified in the table of Figure 106.
VDD
Low
To BIAS SELECT
1 MΩ
BIAS MODE
Medium
Medium
VDD
1 V to VDD – 1 V
High
GND
Low
High
1 MΩ
BIAS-SELECT VOLTAGE
(single supply)
0.01 µF
Figure 106. Bias Selection for Single-Supply Applications
58
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APPLICATION INFORMATION
input characteristics
The TLC271 is specified with a minimum and a maximum input voltage that, if exceeded at either input, could
cause the device to malfunction. Exceeding this specified range is a common problem, especially in
single-supply operation. Note that the lower range limit includes the negative rail, while the upper range limit
is specified at VDD – 1 V at TA = 25°C and at VDD – 1.5 V at all other temperatures.
The use of the polysilicon-gate process and the careful input circuit design gives the TLC271 very good input
offset voltage drift characteristics relative to conventional metal-gate processes. Offset voltage drift in CMOS
devices is highly influenced by threshold voltage shifts caused by polarization of the phosphorus dopant
implanted in the oxide. Placing the phosphorus dopant in a conductor (such as a polysilicon gate) alleviates the
polarization problem, thus reducing threshold voltage shifts by more than an order of magnitude. The offset
voltage drift with time has been calculated to be typically 0.1 µV/month, including the first month of operation.
Because of the extremely high input impedance and resulting low bias current requirements, the TLC271 is well
suited for low-level signal processing; however, leakage currents on printed circuit boards and sockets can
easily exceed bias current requirements and cause a degradation in device performance. It is good practice to
include guard rings around inputs (similar to those of Figure 101 in the Parameter Measurement Information
section). These guards should be driven from a low-impedance source at the same voltage level as the
common-mode input (see Figure 107).
The inputs of any unused amplifiers should be tied to ground to avoid possible oscillation.
noise performance
The noise specifications in operational amplifier circuits are greatly dependent on the current in the first-stage
differential amplifier. The low input bias current requirements of the TLC271 results in a very low noise current,
which is insignificant in most applications. This feature makes the devices especially favorable over bipolar
devices when using values of circuit impedance greater than 50 kΩ, since bipolar devices exhibit greater noise
currents.
+
(a) NONINVERTING AMPLIFIER
VO
+
VO
ÏÏÏÏ
ÏÏÏÏ
ÏÏÏÏ
ÏÏÏÏ
(b) INVERTING AMPLIFIER
VI
VO
+
–
VI
ÏÏÏ
ÏÏÏ
ÏÏÏ
ÏÏÏ
–
VI
–
ÏÏÏ
ÏÏÏ
ÏÏÏ
ÏÏÏ
(c) UNITY-GAIN AMPLIFIER
Figure 107. Guard-Ring Schemes
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OPERATIONAL AMPLIFIERS
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APPLICATION INFORMATION
feedback
ÏÏÏÏ
ÏÏÏÏ
ÏÏÏÏ
ÏÏÏÏ
–
VO
+
Operational amplifier circuits almost always
employ feedback, and since feedback is the first
prerequisite for oscillation, a little caution is
appropriate. Most oscillation problems result from
driving capacitive loads and ignoring stray input
capacitance. A small-value capacitor connected
in parallel with the feedback resistor is an effective
remedy (see Figure 108). The value of this
capacitor is optimized empirically.
Figure 108. Compensation for Input
Capacitance
electrostatic discharge protection
The TLC271 incorporates an internal electrostatic-discharge (ESD) protection circuit that prevents functional
failures at voltages up to 2000 V as tested under MIL-STD-883C, Method 3015.2. Care should be exercised,
however, when handling these devices as exposure to ESD may result in the degradation of the device
parametric performance. The protection circuit also causes the input bias currents to be temperature dependent
and have the characteristics of a reverse-biased diode.
latch-up
Because CMOS devices are susceptible to latch-up due to their inherent parasitic thyristors, the TLC271 inputs
and output were designed to withstand – 100-mA surge currents without sustaining latchup; however,
techniques should be used to reduce the chance of latch-up whenever possible. Internal protection diodes
should not by design be forward biased. Applied input and output voltage should not exceed the supply voltage
by more than 300 mV. Care should be exercised when using capacitive coupling on pulse generators. Supply
transients should be shunted by the use of decoupling capacitors (0.1 µF typical) located across the supply rails
as close to the device as possible.
The current path established if latch-up occurs is usually between the positive supply rail and ground and can
be triggered by surges on the supply lines and/or voltages on either the output or inputs that exceed the supply
voltage. Once latch-up occurs, the current flow is limited only by the impedance of the power supply and the
forward resistance of the parasitic thyristor and usually results in the destruction of the device. The chance of
latch-up occurring increases with increasing temperature and supply voltages.
output characteristics
ÏÏÏÏ
ÏÏÏÏ
ÏÏÏÏ
ÏÏÏÏ
ÏÏÏÏ
2.5 V
–
VI
+
The output stage of the TLC271 is designed to
sink and source relatively high amounts of current
(see Typical Characteristics). If the output is
subjected to a short-circuit condition, this high
current capability can cause device damage
under certain conditions. Output current capability
increases with supply voltage.
VO
CL
TA = 25°C
f = 1 kHz
VI(PP) = 1 V
– 2.5 V
Figure 109. Test Circuit for Output
Characteristics
60
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APPLICATION INFORMATION
output characteristics (continued)
All operating characteristics of the TLC271 were measured using a 20-pF load. The devices drive higher
capacitive loads; however, as output load capacitance increases, the resulting response pole occurs at lower
frequencies, thereby causing ringing, peaking, or even oscillation (see Figures 110, 111, and 112). In many
cases, adding some compensation in the form of a series resistor in the feedback loop alleviates the problem.
(a) CL = 20 pF, RL = NO LOAD
(b) CL = 130 pF, RL = NO LOAD
(c) CL = 150 pF, RL = NO LOAD
Figure 110. Effect of Capacitive Loads in High-Bias Mode
(a) CL = 20 pF, RL = NO LOAD
(b) CL = 170 pF, RL = NO LOAD
(c) CL = 190 pF, RL = NO LOAD
Figure 111. Effect of Capacitive Loads in Medium-Bias Mode
(a) CL = 20 pF, RL = NO LOAD
(b) CL = 260 pF, RL = NO LOAD
(c) CL = 310 pF, RL = NO LOAD
Figure 112. Effect of Capacitive Loads in Low-Bias Mode
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APPLICATION INFORMATION
output characteristics (continued)
Although the TLC271 possesses excellent high-level output voltage and current capability, methods are
available for boosting this capability, if needed. The simplest method involves the use of a pullup resistor (RP)
connected from the output to the positive supply rail (see Figure 113). There are two disadvantages to the use
of this circuit. First, the NMOS pulldown transistor, N4 (see equivalent schematic) must sink a comparatively
large amount of current. In this circuit, N4 behaves like a linear resistor with an on-resistance between
approximately 60 Ω and 180 Ω, depending on how hard the operational amplifier input is driven. With very low
values of RP, a voltage offset from 0 V at the output occurs. Secondly, pullup resistor RP acts as a drain load
to N4 and the gain of the operational amplifier is reduced at output voltage levels where N5 is not supplying the
output current.
VI
ÏÏÏÏ
ÏÏÏÏ
ÏÏÏÏ
ÏÏÏÏ
ÏÏÏÏ
VDD
–
IP
RP
+ I )DDI )OI
F
L
P
V
R
VO
+
IF
P
–V
IP = Pullup current required
by the operational amplifier
(typically 500 µA)
R2
IL
R1
RL
Figure 113. Resistive Pullup to Increase VOH
10 kΩ
10 kΩ
0.016 µF
0.016 µF
10 kΩ
ÏÏÏÏ
ÏÏÏÏ
ÏÏÏÏ
ÏÏÏÏ
5V
–
VI
TLC271
+
BIAS SELECT
10 kΩ
ÏÏÏÏ
ÏÏÏÏ
ÏÏÏÏ
ÏÏÏÏ
5V
–
10 kΩ
TLC271
+
BIAS SELECT
ÏÏÏÏ
ÏÏÏÏ
ÏÏÏÏ
ÏÏÏÏ
5V
–
TLC271
+
Low Pass
BIAS SELECT
High Pass
5 kΩ
Band Pass
R = 5 kΩ(3/d-1)
(see Note A)
NOTE B: d = damping factor, I/O
Figure 114. State-Variable Filter
62
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APPLICATION INFORMATION
output characteristics (continued)
VO (see Note A)
9V
10 kΩ
ÏÏÏÏÏ
ÏÏÏÏÏ
ÏÏÏÏÏ
ÏÏÏÏÏ
ÏÏÏÏÏ
C = 0.1 µF
9V
–
100 kΩ
10 kΩ
BIAS
SELECT
9V
–
TLC271
+
ÏÏÏÏÏ
ÏÏÏÏÏ
ÏÏÏÏÏ
ÏÏÏÏÏ
ÏÏÏÏÏ
R2
VO (see Note B)
TLC271
+
BIAS SELECT
F
O
1
+ 4C(R2)
ƪƫ
R1
R3
R1, 100 kΩ
R3, 47 kΩ
NOTES: A. VO(PP) = 8 V
B. VO(PP) = 4 V
Figure 115. Single-Supply Function Generator
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SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
APPLICATION INFORMATION (HIGH-BIAS MODE)
ÏÏÏÏ
ÏÏÏÏ
ÏÏÏÏ
ÏÏÏÏ
5V
–
VI –
10 kΩ
100 kΩ
TLC271
+
BIAS
SELECT
ÏÏÏÏ
ÏÏÏÏ
ÏÏÏÏ
ÏÏÏÏ
ÏÏÏÏ
5V
–5 V
–
TLC271
+
ÏÏÏÏ
ÏÏÏÏ
ÏÏÏÏ
ÏÏÏÏ
ÏÏÏÏ
5V
VO
BIAS
SELECT
10 kΩ
–5 V
–
10 kΩ
95 kΩ
TLC271
+
VI +
BIAS SELECT
R1, 10 kΩ
(see Note A)
–5 V
NOTE A: CMRR adjustment must be noninductive.
Figure 116. Low-Power Instrumentation Amplifier
ÏÏÏÏ
ÏÏÏÏ
ÏÏÏÏ
ÏÏÏÏ
ÏÏÏÏ
5V
–
R
10 MΩ
R
10 MΩ
TLC271
+
VI
2C
540 pF
VO
BIAS SELECT
f NOTCH
+ 2p1RC
R/2
5 MΩ
C
270 pF
C
270 pF
Figure 117. Single-Supply Twin-T Notch Filter
64
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APPLICATION INFORMATION (HIGH-BIAS MODE)
VI
(see Note A)
1.2 kΩ
100 kΩ
ÏÏÏÏ
ÏÏÏÏ
ÏÏÏÏ
ÏÏÏÏ
4.7 kΩ
–
TL431
20 kΩ
0.47 µF
1 kΩ
TLC271
0.1 µF
+
TIP31
15 Ω
BIAS SELECT
TIS 193
250 µF,
25 V
VO
(see Note B)
–
10 kΩ
47 kΩ
22 kΩ
+
110 Ω
0.01 µF
NOTES: A. VI = 3.5 to 15 V
B. VO = 2.0 V, 0 to 1 A
Figure 118. Logic-Array Power Supply
ÏÏÏÏ
ÏÏÏÏ
ÏÏÏÏ
ÏÏÏÏ
ÏÏÏÏ
12 V
VI
–
–
TLC271
+
ÏÏÏÏ
ÏÏÏÏ
ÏÏÏÏ
ÏÏÏÏ
ÏÏÏÏ
12 V
H.P.
5082-2835
BIAS
SELECT
TLC271
0.5 µF
Mylar
N.O.
Reset
+
VO
BIAS
SELECT
100 kΩ
Figure 119. Positive-Peak Detector
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APPLICATION INFORMATION (MEDIUM-BIAS MODE)
1N4148
470 kΩ
100 kΩ
5V
ÏÏÏÏ
ÏÏÏÏ
ÏÏÏÏ
ÏÏÏÏ
–
47 kΩ
TLC271
100 kΩ
+
VO
BIAS
SELECT
2.5 V
R2
68 kΩ
1 µF
100 kΩ
R1
68 kΩ
C2
2.2 nF
C1
2.2 nF
NOTES: A. VO(PP) = 2 V
B.
fo
1
+ 2p ǸR1R2C1C2
Figure 120. Wein Oscillator
5V
0.01 µF
1 MΩ
ÏÏÏÏ
ÏÏÏÏ
ÏÏÏÏ
ÏÏÏÏ
ÏÏÏÏ
–
VI
0.22 µF
VO
TLC271
+
1 MΩ
BIAS
SELECT
2.5 V
100 kΩ
100 kΩ
10 kΩ
0.1 µF
Figure 121. Single-Supply AC Amplifier
66
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APPLICATION INFORMATION (MEDIUM-BIAS MODE)
5V
Gain Control
1 MΩ
(see Note A)
1 µF
– +
ÏÏÏÏ
ÏÏÏÏ
ÏÏÏÏ
ÏÏÏÏ
ÏÏÏÏ
100 kΩ
1 µF
–
0.1 µF
– +
10 kΩ
+
–
TLC271
BIAS
SELECT
+
1 kΩ
100 kΩ
2.5 V
100 kΩ
NOTE A: Low to medium impedance dynamic mike
Figure 122. Microphone Preamplifier
10 MΩ
ÏÏÏÏ
ÏÏÏÏ
ÏÏÏÏ
ÏÏÏÏ
VDD
1 kΩ
–
TLC271
+
15 nF
ÏÏÏÏ
ÏÏÏÏ
ÏÏÏÏ
ÏÏÏÏ
VDD
–
VO
TLC271
BIAS
SELECT
VDD / 2
VREF
150 pF
+
BIAS
SELECT
VDD / 2
100 kΩ
NOTES: A. NOTES: VDD = 4 V to 15 V
B. Vref = 0 V to VDD – 2 V
Figure 123. Photo-Diode Amplifier With Ambient Light Rejection
ÏÏÏÏÏ
ÏÏÏÏÏ
ÏÏÏÏÏ
ÏÏÏÏÏ
ÏÏÏÏÏ
5V
VI
IS
+
TLC271
–
BIAS
SELECT
2N3821
2.5 V
R
NOTES: A. VI = 0 V TO 3 V
V
I
B. I S
R
+
Figure 124. Precision Low-Current Sink
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OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
APPLICATION INFORMATION (LOW-BIAS MODE)
ÏÏÏ
ÏÏÏ
ÏÏÏ
ÏÏÏ
VDD
+
VI
BIAS SELECT
TLC271
VI
–
VDD
S1
C
A
Select
AV
S1
S2
10
S2
100
C
A
90 kΩ
X1
TLC4066
1
B
1
9 kΩ
X2
Analog
Switch
2
2
B
1 kΩ
NOTE A: VDD = 5 V to 12 V
Figure 125. Amplifier With Digital Gain Selection
5V
ÏÏÏ
ÏÏÏ
ÏÏÏ
ÏÏÏ
+
BIAS SELECT
TLC271
500 kΩ
VO1
–
5V
500 kΩ
ÏÏÏÏ
ÏÏÏÏ
ÏÏÏÏ
ÏÏÏÏ
ÏÏÏÏ
BIAS
SELECT
+
VO2
TLC271
–
0.1 µF
500 kΩ
500 kΩ
Figure 126. Multivibrator
68
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OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
APPLICATION INFORMATION (LOW-BIAS MODE)
10 kΩ
ÏÏÏÏ
ÏÏÏÏ
ÏÏÏÏ
ÏÏÏÏ
ÏÏÏÏ
VDD
20 kΩ
BIAS SELECT
+
VI
VO
TLC271
–
100 kΩ
NOTE A: VDD = 5 V to 16 V
Figure 127. Full-Wave Rectifier
10 kΩ
ÏÏÏ
ÏÏÏ
ÏÏÏ
ÏÏÏ
VDD
100 kΩ
Set
100 kΩ
Reset
BIAS
SELECT
+
TLC271
–
33 Ω
NOTE A: VDD = 5 V to 16 V
Figure 128. Set/Reset Flip-Flop
0.016 µF
ÏÏÏÏ
ÏÏÏÏ
ÏÏÏÏ
ÏÏÏÏ
5V
10 kΩ
10 kΩ
+
VI
0.016 µF
BIAS
SELECT
TLC271
VO
–
NOTE A: Normalized to FC = 1 kHz and RL = 10 kΩ
Figure 129. Two-Pole Low-Pass Butterworth Filter
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OPERATIONAL AMPLIFIERS
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MECHANICAL INFORMATION
D (R-PDSO-G**)
PLASTIC SMALL-OUTLINE PACKAGE
14 PIN SHOWN
PINS **
0.050 (1,27)
8
14
16
A MAX
0.197
(5,00)
0.344
(8,75)
0.394
(10,00)
A MIN
0.189
(4,80)
0.337
(8,55)
0.386
(9,80)
DIM
0.020 (0,51)
0.014 (0,35)
14
0.010 (0,25) M
8
0.244 (6,20)
0.228 (5,80)
0.008 (0,20) NOM
0.157 (4,00)
0.150 (3,81)
1
Gage Plane
7
A
0.010 (0,25)
0°– 8°
0.044 (1,12)
0.016 (0,40)
Seating Plane
0.069 (1,75) MAX
0.010 (0,25)
0.004 (0,10)
0.004 (0,10)
4040047 / D 10/96
NOTES: A.
B.
C.
D.
70
All linear dimensions are in inches (millimeters).
This drawing is subject to change without notice.
Body dimensions do not include mold flash or protrusion, not to exceed 0.006 (0,15).
Falls within JEDEC MS-012
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
MECHANICAL INFORMATION
FK (S-CQCC-N**)
LEADLESS CERAMIC CHIP CARRIER
28 TERMINAL SHOWN
18
17
16
15
14
13
NO. OF
TERMINALS
**
12
19
11
20
10
A
B
MIN
MAX
MIN
MAX
20
0.342
(8,69)
0.358
(9,09)
0.307
(7,80)
0.358
(9,09)
28
0.442
(11,23)
0.458
(11,63)
0.406
(10,31)
0.458
(11,63)
21
9
22
8
44
0.640
(16,26)
0.660
(16,76)
0.495
(12,58)
0.560
(14,22)
23
7
52
0.739
(18,78)
0.761
(19,32)
0.495
(12,58)
0.560
(14,22)
24
6
68
25
5
0.938
(23,83)
0.962
(24,43)
0.850
(21,6)
0.858
(21,8)
84
1.141
(28,99)
1.165
(29,59)
1.047
(26,6)
1.063
(27,0)
B SQ
A SQ
26
27
28
1
2
3
4
0.080 (2,03)
0.064 (1,63)
0.020 (0,51)
0.010 (0,25)
0.020 (0,51)
0.010 (0,25)
0.055 (1,40)
0.045 (1,14)
0.045 (1,14)
0.035 (0,89)
0.045 (1,14)
0.035 (0,89)
0.028 (0,71)
0.022 (0,54)
0.050 (1,27)
4040140 / D 10/96
NOTES: A.
B.
C.
D.
E.
All linear dimensions are in inches (millimeters).
This drawing is subject to change without notice.
This package can be hermetically sealed with a metal lid.
The terminals are gold plated.
Falls within JEDEC MS-004
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
71
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
MECHANICAL INFORMATION
JG (R-GDIP-T8)
CERAMIC DUAL-IN-LINE PACKAGE
0.400 (10,20)
0.355 (9,00)
8
5
0.280 (7,11)
0.245 (6,22)
1
4
0.065 (1,65)
0.045 (1,14)
0.310 (7,87)
0.290 (7,37)
0.020 (0,51) MIN
0.200 (5,08) MAX
Seating Plane
0.130 (3,30) MIN
0.063 (1,60)
0.015 (0,38)
0.100 (2,54)
0°–15°
0.023 (0,58)
0.015 (0,38)
0.014 (0,36)
0.008 (0,20)
4040107/C 08/96
NOTES: A.
B.
C.
D.
E.
72
All linear dimensions are in inches (millimeters).
This drawing is subject to change without notice.
This package can be hermetically sealed with a ceramic lid using glass frit.
Index point is provided on cap for terminal identification only.
Falls within MIL-STD-1835 GDIP1-T8
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
MECHANICAL INFORMATION
P (R-PDIP-T8)
PLASTIC DUAL-IN-LINE PACKAGE
0.400 (10,60)
0.355 (9,02)
8
5
0.260 (6,60)
0.240 (6,10)
1
4
0.070 (1,78) MAX
0.310 (7,87)
0.290 (7,37)
0.020 (0,51) MIN
0.200 (5,08) MAX
Seating Plane
0.125 (3,18) MIN
0.100 (2,54)
0.021 (0,53)
0.015 (0,38)
0°– 15°
0.010 (0,25) M
0.010 (0,25) NOM
4040082 / B 03/95
NOTES: A. All linear dimensions are in inches (millimeters).
B. This drawing is subject to change without notice.
C. Falls within JEDEC MS-001
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
73
PACKAGE OPTION ADDENDUM
www.ti.com
31-Jul-2006
PACKAGING INFORMATION
Orderable Device
Status (1)
Package
Type
Package
Drawing
Pins Package Eco Plan (2)
Qty
TLC271ACD
ACTIVE
SOIC
D
8
75
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TLC271ACDG4
ACTIVE
SOIC
D
8
75
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TLC271ACDR
ACTIVE
SOIC
D
8
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TLC271ACDRG4
ACTIVE
SOIC
D
8
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TLC271ACP
ACTIVE
PDIP
P
8
50
Pb-Free
(RoHS)
CU NIPDAU
N / A for Pkg Type
TLC271ACPE4
ACTIVE
PDIP
P
8
50
Pb-Free
(RoHS)
CU NIPDAU
N / A for Pkg Type
TLC271ACPSR
ACTIVE
SO
PS
8
2000 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TLC271ACPSRG4
ACTIVE
SO
PS
8
2000 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TLC271AID
ACTIVE
SOIC
D
8
75
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TLC271AIDG4
ACTIVE
SOIC
D
8
75
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TLC271AIDR
ACTIVE
SOIC
D
8
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TLC271AIDRG4
ACTIVE
SOIC
D
8
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TLC271AIP
ACTIVE
PDIP
P
8
50
Pb-Free
(RoHS)
CU NIPDAU
N / A for Pkg Type
TLC271AIPE4
ACTIVE
PDIP
P
8
50
Pb-Free
(RoHS)
CU NIPDAU
N / A for Pkg Type
TLC271BCD
ACTIVE
SOIC
D
8
75
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TLC271BCDG4
ACTIVE
SOIC
D
8
75
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TLC271BCDR
ACTIVE
SOIC
D
8
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TLC271BCDRG4
ACTIVE
SOIC
D
8
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TLC271BCP
ACTIVE
PDIP
P
8
50
Pb-Free
(RoHS)
CU NIPDAU
N / A for Pkg Type
TLC271BCPE4
ACTIVE
PDIP
P
8
50
Pb-Free
(RoHS)
CU NIPDAU
N / A for Pkg Type
TLC271BCPSR
ACTIVE
SO
PS
8
2000 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TLC271BCPSRG4
ACTIVE
SO
PS
8
2000 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TLC271BID
ACTIVE
SOIC
D
8
75
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TLC271BIDG4
ACTIVE
SOIC
D
8
75
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TLC271BIDR
ACTIVE
SOIC
D
8
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
Addendum-Page 1
Lead/Ball Finish
MSL Peak Temp (3)
PACKAGE OPTION ADDENDUM
www.ti.com
31-Jul-2006
Orderable Device
Status (1)
Package
Type
Package
Drawing
Pins Package Eco Plan (2)
Qty
TLC271BIDRG4
ACTIVE
SOIC
D
8
TLC271BIP
ACTIVE
PDIP
P
8
50
TLC271BIPE4
ACTIVE
PDIP
P
8
TLC271CD
ACTIVE
SOIC
D
TLC271CDG4
ACTIVE
SOIC
TLC271CDR
ACTIVE
TLC271CDRG4
2500 Green (RoHS &
no Sb/Br)
Lead/Ball Finish
MSL Peak Temp (3)
CU NIPDAU
Level-1-260C-UNLIM
Pb-Free
(RoHS)
CU NIPDAU
N / A for Pkg Type
50
Pb-Free
(RoHS)
CU NIPDAU
N / A for Pkg Type
8
75
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
D
8
75
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
SOIC
D
8
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
ACTIVE
SOIC
D
8
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TLC271CP
ACTIVE
PDIP
P
8
50
Pb-Free
(RoHS)
CU NIPDAU
N / A for Pkg Type
TLC271CPE4
ACTIVE
PDIP
P
8
50
Pb-Free
(RoHS)
CU NIPDAU
N / A for Pkg Type
TLC271CPSR
ACTIVE
SO
PS
8
2000 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TLC271CPSRG4
ACTIVE
SO
PS
8
2000 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TLC271CPW
ACTIVE
TSSOP
PW
8
150
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TLC271CPWG4
ACTIVE
TSSOP
PW
8
150
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TLC271CPWLE
OBSOLETE
TSSOP
PW
8
TBD
Call TI
TLC271CPWR
ACTIVE
TSSOP
PW
8
2000 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TLC271CPWRG4
ACTIVE
TSSOP
PW
8
2000 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TLC271ID
ACTIVE
SOIC
D
8
75
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TLC271IDG4
ACTIVE
SOIC
D
8
75
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TLC271IDR
ACTIVE
SOIC
D
8
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TLC271IDRG4
ACTIVE
SOIC
D
8
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TLC271IP
ACTIVE
PDIP
P
8
50
Pb-Free
(RoHS)
CU NIPDAU
N / A for Pkg Type
TLC271IPE4
ACTIVE
PDIP
P
8
50
Pb-Free
(RoHS)
CU NIPDAU
N / A for Pkg Type
TLC271MDR
ACTIVE
SOIC
D
8
2500
TBD
CU NIPDAU
Level-1-220C-UNLIM
TLC271MJG
OBSOLETE
CDIP
JG
8
TBD
Call TI
(1)
Call TI
Call TI
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
Addendum-Page 2
PACKAGE OPTION ADDENDUM
www.ti.com
31-Jul-2006
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS
compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is
provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the
accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take
reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on
incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited
information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI
to Customer on an annual basis.
Addendum-Page 3
MECHANICAL DATA
MCER001A – JANUARY 1995 – REVISED JANUARY 1997
JG (R-GDIP-T8)
CERAMIC DUAL-IN-LINE
0.400 (10,16)
0.355 (9,00)
8
5
0.280 (7,11)
0.245 (6,22)
1
0.063 (1,60)
0.015 (0,38)
4
0.065 (1,65)
0.045 (1,14)
0.310 (7,87)
0.290 (7,37)
0.020 (0,51) MIN
0.200 (5,08) MAX
Seating Plane
0.130 (3,30) MIN
0.023 (0,58)
0.015 (0,38)
0°–15°
0.100 (2,54)
0.014 (0,36)
0.008 (0,20)
4040107/C 08/96
NOTES: A.
B.
C.
D.
E.
All linear dimensions are in inches (millimeters).
This drawing is subject to change without notice.
This package can be hermetically sealed with a ceramic lid using glass frit.
Index point is provided on cap for terminal identification.
Falls within MIL STD 1835 GDIP1-T8
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
MECHANICAL DATA
MPDI001A – JANUARY 1995 – REVISED JUNE 1999
P (R-PDIP-T8)
PLASTIC DUAL-IN-LINE
0.400 (10,60)
0.355 (9,02)
8
5
0.260 (6,60)
0.240 (6,10)
1
4
0.070 (1,78) MAX
0.325 (8,26)
0.300 (7,62)
0.020 (0,51) MIN
0.015 (0,38)
Gage Plane
0.200 (5,08) MAX
Seating Plane
0.010 (0,25) NOM
0.125 (3,18) MIN
0.100 (2,54)
0.021 (0,53)
0.015 (0,38)
0.430 (10,92)
MAX
0.010 (0,25) M
4040082/D 05/98
NOTES: A. All linear dimensions are in inches (millimeters).
B. This drawing is subject to change without notice.
C. Falls within JEDEC MS-001
For the latest package information, go to http://www.ti.com/sc/docs/package/pkg_info.htm
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
MECHANICAL DATA
MTSS001C – JANUARY 1995 – REVISED FEBRUARY 1999
PW (R-PDSO-G**)
PLASTIC SMALL-OUTLINE PACKAGE
14 PINS SHOWN
0,30
0,19
0,65
14
0,10 M
8
0,15 NOM
4,50
4,30
6,60
6,20
Gage Plane
0,25
1
7
0°– 8°
A
0,75
0,50
Seating Plane
0,15
0,05
1,20 MAX
PINS **
0,10
8
14
16
20
24
28
A MAX
3,10
5,10
5,10
6,60
7,90
9,80
A MIN
2,90
4,90
4,90
6,40
7,70
9,60
DIM
4040064/F 01/97
NOTES: A.
B.
C.
D.
All linear dimensions are in millimeters.
This drawing is subject to change without notice.
Body dimensions do not include mold flash or protrusion not to exceed 0,15.
Falls within JEDEC MO-153
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
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