µ SGLS275 − OCTOBER 2004 D Qualification in Accordance With D D D D D D D D D Input Bias Current . . . 1 pA D Specified Temperature Range AEC-Q100† Qualified for Automotive Applications Customer-Specific Configuration Control Can Be Supported Along With Major-Change Approval Rail-To-Rail Output Wide Bandwidth . . . 3 MHz High Slew Rate . . . 2 .4 V/µs Supply Voltage Range . . . 2.7 V to 16 V Supply Current . . . 550 µA/Channel Input Noise Voltage . . . 39 nV/√Hz −40°C to 125°C . . . Automotive Grade D Ultrasmall Packaging D − 5-Pin SOT-23 (TLV271) Ideal Upgrade for TLC27x Family Operational Amplifier + − † Contact Texas Instruments for details. Q100 qualification data available on request. description The TLV27x takes the minimum operating supply voltage down to 2.7 V over the extended automotive temperature range while adding the rail-to-rail output swing feature. This makes it an ideal alternative to the TLC27x family for applications where rail-to-rail output swings are essential. The TLV27x also provides 3-MHz bandwidth from only 550 µA. Like the TLC27x, the TLV27x is fully specified for 5-V and ±5-V supplies. The maximum recommended supply voltage is 16 V, which allows the devices to be operated from a variety of rechargeable cells (±8 V supplies down to ±1.35 V). The CMOS inputs enable use in high-impedance sensor interfaces, with the lower voltage operation making an attractive alternative for the TLC27x in battery-powered applications. The 2.7-V operation makes it compatible with Li-Ion powered systems and the operating supply voltage range of many micropower microcontrollers available today including Texas Instruments MSP430. SELECTION OF SIGNAL AMPLIFIER PRODUCTS† DEVICE VDD (V) VIO (µV) Iq/Ch (µA) IIB (pA) GBW (MHz) SR (V/µs) SHUTDOWN RAILTORAIL SINGLES/DUALS/QUADS TLV27x 2.7−16 500 550 1 3 2.4 — O S/D/Q TLC27x 3−16 1100 675 1 1.7 3.6 — — S/D/Q TLV237x 2.7−16 500 550 1 3 2.4 Yes I/O S/D/Q TLC227x 4−16 300 1100 1 2.2 3.6 — O D/Q TLV246x 2.7−6 150 550 1300 6.4 1.6 Yes I/O S/D/Q TLV247x 2.7−6 250 600 2 2.8 1.5 Yes I/O S/D/Q TLV244x 2.7−10 300 † Typical values measured at 5 V, 25°C 725 1 1.8 1.4 — O D/Q Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. Copyright 2001−2004, Texas Instruments Incorporated !"#$%&'(!$" !) *+%%,"( ') $# -+./!*'(!$" 0'(,1 %$0+*() *$"#$%& ($ )-,*!#!*'(!$") -,% (, (,%&) $# ,2') ")(%+&,"() )('"0'%0 3'%%'"(41 %$0+*(!$" -%$*,))!"5 0$,) "$( ",*,))'%!/4 !"*/+0, (,)(!"5 $# '// -'%'&,(,%)1 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 1 µ SGLS275 − OCTOBER 2004 FAMILY PACKAGE TABLE PACKAGE TYPES NUMBER OF CHANNELS SOIC TLV271 1 TLV272 2 4 DEVICE TLV274 † Product Preview SOT-23 TSSOP MSOP† 8 5 — — 8 — — 8 14 — 14 — UNIVERSAL EVM BOARD See the EVM Selection Guide (SLOU060) TLV271 AVAILABLE OPTIONS PACKAGED DEVICES VIOMAX AT 25°C TA −40°C to 125°C SOT-23 SMALL OUTLINE (D) 5 mV TLV271QDRQ1 (DBV) SYMBOL TLV271QDBVRQ1 271Q TLV272 AVAILABLE OPTIONS PACKAGED DEVICES VIOMAX AT 25°C TA −40°C to 125°C † Product Preview 5 mV MSOP SMALL OUTLINE (D) (DGK) TLV272QDRQ1 TLV272QDGKRQ1† SYMBOL TLV274 AVAILABLE OPTIONS PACKAGED DEVICES 2 TA VIOMAX AT 25°C SMALL OUTLINE (D) TSSOP (PW) −40°C to 125°C 5 mV TLV274QDRQ1 TLV274QPWRQ1 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 µ SGLS275 − OCTOBER 2004 TLV27x PACKAGE PINOUTS(1) TLV271 D PACKAGE (TOP VIEW) TLV271 DBV PACKAGE (TOP VIEW) OUT GND IN+ 1 5 VDD NC IN − IN + GND 2 3 4 IN − 1 8 2 7 3 6 4 5 8 2 7 3 6 4 5 NC VDD OUT NC TLV274 D OR PW PACKAGE TLV272 D OR DGK PACKAGE (TOP VIEW) 1OUT 1IN − 1IN + GND 1 (TOP VIEW) VDD 2OUT 2IN − 2IN+ 1OUT 1IN − 1IN+ VDD 2IN+ 2IN − 2OUT 1 14 2 13 3 12 4 11 5 10 6 9 7 8 4OUT 4IN − 4IN+ GND 3IN+ 3IN − 3OUT NC − No internal connection (1) SOT−23 may or may not be indicated TYPICAL PIN 1 INDICATORS Pin 1 Printed or Molded Dot Pin 1 Stripe Pin 1 Bevel Edges POST OFFICE BOX 655303 Pin 1 Molded ”U” Shape • DALLAS, TEXAS 75265 3 µ SGLS275 − OCTOBER 2004 absolute maximum ratings over operating free-air temperature range (unless otherwise noted)† Supply voltage, VDD (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16.5 V Differential input voltage, VID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± VDD Input voltage range, VI (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.2 V to VDD + 0.2 V Input current range, II . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 10 mA Output current range, IO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 100 mA Continuous total power dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Dissipation Rating Table Operating free-air temperature range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40°C to 125°C Maximum junction temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150°C Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65°C to 150°C Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C † Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. NOTE 1: All voltage values, except differential voltages, are with respect to GND. DISSIPATION RATING TABLE PACKAGE θJC (°C/W) D (8) 38.3 D (14) 26.9 θJA (°C/W) TA ≤ 25°C POWER RATING TA = 25°C POWER RATING 176 710 mW 396 mW 122.3 1022 mW 531 mW DBV (5) 55 324.1 385 mW 201 mW DGK (8) 54.23 259.96 481 mW 250 mW PW (14) 29.3 173.6 720 mW 374 mW recommended operating conditions Single supply Supply voltage, VDD Split supply Common-mode input voltage range, VICR Operating free-air temperature, TA 4 Q-suffix POST OFFICE BOX 655303 MIN MAX 2.7 16 ±1.35 ±8 0 VDD−1.35 125 −40 • DALLAS, TEXAS 75265 UNIT V V °C µ SGLS275 − OCTOBER 2004 electrical characteristics at specified free-air temperature, VDD = 2.7 V, 5 V, and 15 V (unless otherwise noted) dc performance PARAMETER VIO Input offset voltage αVIO Offset voltage drift TEST CONDITIONS VIC = VDD/2, RL = 10 kΩ, kΩ VO = VDD/2, RS = 50 Ω VIC = 0 to VDD−1.35V, RS = 50 Ω CMRR AVD Common-mode rejection ratio Large-signal differential voltage amplification VDD = 2.7 V TA† 25°C MIN MAX 0.5 5 Full range 7 25°C 53 Full range 54 25°C 58 VDD = 5 V Full range 57 VIC = 0 to VDD−1.35V, RS = 50 Ω 25°C 67 VDD = 15 V Full range 66 25°C 95 VDD = 2.7 V Full range 76 25°C 80 VDD = 5 V Full range 82 25°C 77 VDD = 15 V Full range 79 UNIT mV µV/°C 2 25°C VIC = 0 to VDD−1.35V, RS = 50 Ω VO(PP) = VDD/2, RL = 10 kkΩ TYP 70 80 dB 85 106 110 dB 115 † Full range is − 40°C to 125°C. If not specified, full range is − 40°C to 125°C. input characteristics PARAMETER IIO Input offset current IIB Input bias current ri(d) Differential input resistance CIC Common-mode input capacitance TEST CONDITIONS VDD = 15 V, VIC = VDD/2, VO = VDD/2, RS = 50 Ω TA 25°C MIN TYP 1 125°C 25°C 1 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 UNIT 60 1000 125°C f = 21 kHz MAX pA 60 1000 pA 25°C 1000 GΩ 25°C 8 pF 5 µ SGLS275 − OCTOBER 2004 electrical characteristics at specified free-air temperature, VDD = 2.7 V, 5 V, and 15 V (unless otherwise noted) output characteristics PARAMETER TEST CONDITIONS VDD = 2.7 V VIC = VDD/2, IOH = −1 mA VOH MIN TYP 2.55 2.58 Full range 2.48 25°C 4.9 VDD = 5 V Full range 4.85 25°C 14.92 VDD = 15 V Full range 14.9 25°C 1.88 Full range 1.42 25°C 4.58 Full range 4.44 25°C 14.7 VDD = 15 V Full range 14.6 VDD = 2.7 V Full range High-level output voltage VDD = 2.7 V VIC = VDD/2, IOH = −5 mA TA† 25°C VDD = 5 V 25°C 25°C VIC = VDD/2, IOL = 1 mA VDD = 5 V VDD = 15 V VOL Low-level output voltage VDD = 2.7 V Full range VDD = 5 V Full range 25°C VIC = VDD/2, IOL = 5 mA 25°C VO = 0.5 V from rail, VDD = 2.7 V IO Output current VO = 0.5 V from rail, VDD = 5 V VO = 0.5 V from rail, VDD = 15 V POST OFFICE BOX 655303 4.68 14.8 0.1 0.15 0.22 0.05 0.1 0.15 0.05 0.08 0.1 0.5 0.7 V 1.15 0.28 0.4 0.54 0.19 Full range Positive rail 25°C 4 Negative rail 25°C 5 Positive rail 25°C 7 Negative rail 25°C 8 Positive rail 25°C 13 Negative rail 25°C 12 • DALLAS, TEXAS 75265 V 2.1 VDD = 15 V † Full range is − 40°C to 125°C. If not specified, full range is − 40°C to 125°C. ‡ Depending on package dissipation rating 6 14.96 Full range 25°C UNIT 4.93 Full range 25°C MAX 0.3 0.35 mA µ SGLS275 − OCTOBER 2004 electrical characteristics at specified free-air temperature, VDD = 2.7 V, 5 V, and 15 V (unless otherwise noted) (continued) power supply PARAMETER IDD TEST CONDITIONS Supply current (per channel) VDD = 2.7 V VDD = 5 V VO = VDD/2 VDD = 15 V PSRR Supply voltage rejection ratio (∆VDD /∆VIO) VDD = 2.7 V to 15 V, No load VIC = VDD /2, TA† 25°C MIN TYP MAX 470 560 25°C 550 660 25°C 750 900 Full range UNIT µA 1200 25°C 70 Full range 65 80 dB † Full range is − 40°C to 125°C. If not specified, full range is − 40°C to 125°C. dynamic performance PARAMETER UGBW Unity gain bandwidth TA† TEST CONDITIONS RL = 2 kΩ, kΩ CL = 10 pF 2.4 VDD = 5 V to 15 V 25°C 3 25°C φm ts Slew rate at unity gain VO(PP) = VDD/2, CL = 50 pF, RL = 10 kkΩ,, TYP 25°C VDD = 2.7 V SR MIN VDD = 2.7 V Full range 1.4 MAX MHz 2.1 V/ s V/µs 1 25°C 1.4 VDD = 5 V Full range 1.2 25°C 1.9 VDD = 15 V Full range 1.4 UNIT 2.4 V/ s V/µs 2.1 V/ s V/µs Phase margin RL = 2 kΩ CL = 10 pF 25°C 65 ° Gain margin RL = 2 kΩ CL = 10 pF 25°C 18 dB Settling time VDD = 2.7 V, V(STEP)PP = 1 V, AV = −1, CL = 10 pF, RL = 2 kΩ VDD = 5 V, 15 V, V(STEP)PP = 1 V, AV = −1, CL = 47 pF, RL = 2 kΩ 0.1% 2.9 µss 25°C 0.1% 2 † Full range is − 40°C to 125°C. If not specified, full range is − 40°C to 125°C. noise/distortion performance PARAMETER TEST CONDITIONS VDD = 2.7 V, VO(PP) = VDD/2 V, RL = 2 kΩ, k , f = 10 kHz THD + N Total harmonic distortion plus noise VDD = 5 V, ±5 V, VO(PP) = VDD/2 V, RL = 2 kΩ, k , f = 10K AV = 1 AV = 10 TA Equivalent input noise voltage In Equivalent input noise current UNIT 0.05% 0.02% 25°C 25 C 0.09% 0.5% 39 25°C f = 10 kHz f = 1 kHz POST OFFICE BOX 655303 MAX 0.18% f = 1 kHz Vn TYP 0.02% 25°C 25 C AV = 100 AV = 1 AV = 10 AV = 100 MIN 25°C • DALLAS, TEXAS 75265 35 0.6 nV/√Hz fA /√Hz 7 µ SGLS275 − OCTOBER 2004 TYPICAL CHARACTERISTICS Table of Graphs FIGURE CMRR Common-mode rejection ratio vs Frequency Input bias and offset current vs Free-air temperature 1 VOL VOH Low-level output voltage vs Low-level output current 3, 5, 7 High-level output voltage vs High-level output current 4, 6, 8 VO(PP) IDD Peak-to-peak output voltage vs Frequency 9 Supply current vs Supply voltage 10 PSRR Power supply rejection ratio vs Frequency 11 AVD Differential voltage gain & phase vs Frequency 12 Gain-bandwidth product vs Free-air temperature 13 vs Supply voltage 14 2 SR Slew rate vs Free-air temperature 15 φm Vn Phase margin vs Capacitive load 16 Equivalent input noise voltage vs Frequency 17 Voltage-follower large-signal pulse response 18, 19 Voltage-follower small-signal pulse response 20 Inverting large-signal response 21, 22 Inverting small-signal response Crosstalk 8 23 vs Frequency POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 24 µ SGLS275 − OCTOBER 2004 TYPICAL CHARACTERISTICS 100 VDD = 5 V, 10 V 80 60 VDD = 2.7 V 40 20 0 10 100 1k 100 k 10 k 1M 250 VDD = 2.7 V, 5 V and 10 V VIC = VDD/2 200 150 100 50 0 −40 −25 −10 5 TA =−40°C TA = 125°C TA = 70°C TA = 25°C 0.80 TA = 0°C 0.40 TA = 125 °C 4.00 TA = 70 °C 3.50 3.00 2.50 TA = 25 °C 2.00 1.50 TA = 0 °C 1.00 TA = −40 °C 0.50 1 2 3 4 5 6 7 8 9 10 11 12 IOH − High-Level Output Current − mA 8 TA =70°C TA =25°C TA =0°C TA =−40°C 2 80 100 IOL − Low-Level Output Current − mA Figure 7 3.00 2.50 TA = 25°C 2.00 1.50 TA = 70°C 1.00 TA = 125°C 0.50 5 10 10 VDD = 10 V 8 TA = −40°C 6 TA = 0°C 4 TA = 25°C 2 120 TA = 70°C TA = 125°C 0 20 40 60 80 100 120 IOH − High-Level Output Current − mA Figure 8 POST OFFICE BOX 655303 15 20 25 30 35 40 45 IOH − High-Level Output Current − mA Figure 6 0 0 60 TA = 0°C 3.50 0 PEAK-TO-PEAK OUTPUT VOLTAGE vs FREQUENCY V O(PP) − Peak-to-Peak Output Voltage − V TA =125°C 40 TA = −40°C 4.00 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 IOL − Low-Level Output Current − mA HIGH-LEVEL OUTPUT VOLTAGE vs HIGH-LEVEL OUTPUT CURRENT V OH − High-Level Output Voltage − V VOL − Low-Level Output Voltage − V VDD = 10 V 20 VCC = 5 V 4.50 Figure 5 10 0 2 4 6 8 10 12 14 16 18 20 22 24 IOL − Low-Level Output Current − mA 0.00 Figure 4 LOW-LEVEL OUTPUT VOLTAGE vs LOW-LEVEL OUTPUT CURRENT TA = 0 °C TA = 40 °C 5.00 VDD = 5 V 4.50 0.00 4 0.40 HIGH-LEVEL OUTPUT VOLTAGE vs HIGH-LEVEL OUTPUT CURRENT V OH − High-Level Output Voltage − V VOL − Low-Level Output Voltage − V V OH − High-Level Output Voltage − V 2.40 6 TA = 70 °C TA = 25 °C 0.80 Figure 3 5.00 VDD = 2.7 V 0 1.20 0 20 35 50 65 80 95 110 125 LOW-LEVEL OUTPUT VOLTAGE vs LOW-LEVEL OUTPUT CURRENT 2.80 1.20 1.60 Figure 2 HIGH-LEVEL OUTPUT VOLTAGE vs HIGH-LEVEL OUTPUT CURRENT 1.60 2.00 TA − Free-Air Temperature − °C Figure 1 2.00 VDD = 2.7 V 2.40 T = 125 °C A 0.00 −50 f − Frequency − Hz 0.00 2.80 300 VOL − Low-Level Output Voltage − V 120 LOW-LEVEL OUTPUT VOLTAGE vs LOW-LEVEL OUTPUT CURRENT INPUT BIAS AND OFFSET CURRENT vs FREE-AIR TEMPERATURE I IB I IO − Input Bias and Offset Current − pA CMRR − Common-Mode Rejection Ratio − dB COMMON-MODE REJECTION RATIO vs FREQUENCY • DALLAS, TEXAS 75265 11 VDD = 10 V 10 9 8 7 6 AV = −10 RL = 2 kΩ CL = 10 pF TA = 25°C THD = 5% 5 VDD = 5 V 4 3 2 VDD = 2.7 V 1 0 10 100 1k 10 k 100 k 1M 10 M f − Frequency − Hz Figure 9 9 µ SGLS275 − OCTOBER 2004 TYPICAL CHARACTERISTICS POWER SUPPLY REJECTION RATIO vs FREQUENCY SUPPLY CURRENT vs SUPPLY VOLTAGE AV = 1 VIC = VDD / 2 I DD − Supply Current − mA/ch 0.9 PSRR − Power Supply Rejection Ratio − dB 1.0 TA = 125°C 0.8 TA = 70°C 0.7 0.6 0.5 0.4 TA = 25°C 0.3 TA = 0°C 0.2 TA = −40°C 0.1 0.0 120 TA = 25°C 100 VDD = 5 V, 10 V 80 VDD = 2.7 V 60 40 20 0 10 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 VDD − Supply Voltage − V 100 1k DIFFERENTIAL VOLTAGE GAIN AND PHASE vs FREQUENCY 90 45 60 0 Gain −45 20 −90 VDD=5 V RL=2 kΩ CL=10 pF TA=25°C −20 −40 10 100 −135 1k 10 k 100 k 1 M −180 10 M GBWP −Gain Bandwidth Product − MHz Phase Phase − ° AVD − Differential Voltage Gain − dB 4.0 135 100 0 3.5 VDD = 10 V 3.0 2.5 2.0 VDD = 5 V VDD = 2.7 V 1.5 1.0 0.5 0.0 −40 −25 −10 5 Figure 13 Figure 12 SLEW RATE vs FREE-AIR TEMPERATURE SLEW RATE vs SUPPLY VOLTAGE 3.5 3.0 SR+ 1.0 AV = 1 RL = 10 kΩ CL = 50 pF TA = 25°C 0.5 2.5 4.5 6.5 8.5 10.5 12.5 VCC − Supply Voltage −V Figure 14 10 80 SR− 2.5 2.0 SR+ 1.5 VDD = 5 V AV = 1 RL = 10 kΩ CL = 50 pF VI = 3 V 1.0 0.5 0.0 14.5 VDD = 5 V RL= 2 kΩ TA = 25°C AV = Open Loop 90 0.0 −40 −25 −10 5 20 35 50 65 80 95 110 125 TA − Free-Air Temperature − °C Figure 15 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 Phase Margin − ° 2.0 PHASE MARGIN vs CAPACITIVE LOAD 100 3.0 SR − Slew Rate − V/ µ s SR − Slew Rate − V/ µ s SR− 1.5 20 35 50 65 80 95 110 125 TA − Free-Air Temperature − °C f − Frequency − Hz 2.5 1M GAIN BANDWIDTH PRODUCT vs FREE-AIR TEMPERATURE 180 120 40 100 k Figure 11 Figure 10 80 10 k f − Frequency − Hz 70 Rnull = 100 60 50 40 Rnull = 0 30 Rnull = 50 20 10 0 10 100 CL − Capacitive Load − pF Figure 16 1000 µ SGLS275 − OCTOBER 2004 TYPICAL CHARACTERISTICS VOLTAGE-FOLLOWER LARGE-SIGNAL PULSE RESPONSE VDD = 2.7, 5, 10 V TA = 25°C 90 4 80 70 60 50 3 2 1 VDD = 5 V AV = 1 RL = 2 kΩ CL = 10 pF VI = 3 VPP TA = 25°C VI 0 40 3 30 2 20 1 VO 10 0 0 100 1k 10 k f − Frequency − Hz 0 100 k 2 6 4 2 VO 0 0 2 4 6 8 0.12 0.08 VDD = 5 V AV = 1 RL = 2 kΩ CL = 10 pF VI = 100 mVPP TA = 25°C 0.04 VI 0.00 0.04 VO 0.00 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 10 12 14 16 18 t − Time − µs Figure 20 Figure 19 4 VDD = 5 V AV = 1 RL = 2 kΩ CL = 10 pF VI = 3 VPP TA = 25°C 1 0 3 2 1 0 VO 0 2 4 6 8 10 12 14 V − Output Voltage − V O VI 16 INVERTING LARGE-SIGNAL RESPONSE V I − Input Voltage − V INVERTING LARGE-SIGNAL RESPONSE 2 0.12 0.08 t − Time − µs 3 10 12 14 16 18 V − Output Voltage − mV O 0 V − Output Voltage − V O VDD = 10 V AV = 1 RL = 2 kΩ CL = 10 pF VI = 6 VPP TA = 25°C V − Input Voltage − mV I V − Input Voltage − V I 6 VI 8 VOLTAGE-FOLLOWER SMALL-SIGNAL PULSE RESPONSE 8 2 6 Figure 18 VOLTAGE-FOLLOWER LARGE-SIGNAL PULSE RESPONSE 4 4 t − Time − µs 8 6 VDD = 10 V AV = VI = −1 RL = 2 kΩ CL = 10 pF TA = 25°C 4 2 0 VI 6 VO 4 2 0 0 t − Time − µs 2 4 6 8 10 t − Time − µs 12 14 V O − Output Voltage − V 10 Figure 17 V − Input Voltage − V I V − Output Voltage − V O 100 V − Input Voltage − V I V n − Equivalent Input Noise Voltage − nV/ Hz EQUIVALENT INPUT NOISE VOLTAGE vs FREQUENCY 16 Figure 22 Figure 21 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 11 µ SGLS275 − OCTOBER 2004 TYPICAL CHARACTERISTICS CROSSTALK vs FREQUENCY 0 0.00 VDD = 5 V AV = VI = −1 RL = 2 kΩ CL = 10 pF VI = 100 mVpp TA = 25°C −40 VI 0.10 VO 0.05 0.00 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Crosstalk − dB 0.05 VDD = 2.7, 5, & 15 V VI = 1 VDD/2 AV = 1 RL = 2 kΩ TA = 25°C −20 0.10 V O − Output Voltage − V V I − Input Voltage − V INVERTING SMALL-SIGNAL RESPONSE −60 −80 −100 Crosstalk −120 −140 10 100 1k 10 k f − Frequency − Hz t − Time − µs 100 k Figure 24 Figure 23 APPLICATION INFORMATION driving a capacitive load When the amplifier is configured in this manner, capacitive loading directly on the output decreases the device’s phase margin leading to high frequency ringing or oscillations. Therefore, for capacitive loads of greater than 10 pF, it is recommended that a resistor be placed in series (RNULL) with the output of the amplifier, as shown in Figure 25. A minimum value of 20 Ω should work well for most applications. RF RG − Input + RNULL Output CLOAD VDD/2 Figure 25. Driving a Capacitive Load 12 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 µ SGLS275 − OCTOBER 2004 APPLICATION INFORMATION offset voltage The output offset voltage (VOO) is the sum of the input offset voltage (VIO) and both input bias currents (IIB) times the corresponding gains. The following schematic and formula can be used to calculate the output offset voltage: RF RG IIB− + − VI RS V VO + OO +V IO ǒ ǒ ǓǓ R 1) R F "I G IB) R S ǒ ǒ ǓǓ 1) R R F G "I IB– R F IIB+ Figure 26. Output Offset Voltage Model general configurations When receiving low-level signals, limiting the bandwidth of the incoming signals into the system is often required. The simplest way to accomplish this is to place an RC filter at the noninverting terminal of the amplifier (see Figure 27). RG RF O + V I VDD/2 VI V ǒ 1) R R F G Ǔǒ Ǔ 1 1 ) sR1C1 − VO + R1 f –3dB + 1 2pR1C1 C1 Figure 27. Single-Pole Low-Pass Filter If even more attenuation is needed, a multiple pole filter is required. The Sallen-Key filter can be used for this task. For the best results, the amplifier should have a bandwidth that is 8 to 10 times the filter frequency bandwidth. Failure to do this can result in phase shift of the amplifier. C1 + _ VI R1 R1 = R2 = R C1 = C2 = C Q = Peaking Factor (Butterworth Q = 0.707) R2 f C2 RF RG –3dB RG = + ( 1 2pRC RF 1 2− Q ) VDD/2 Figure 28. 2-Pole Low-Pass Sallen-Key Filter POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 13 µ SGLS275 − OCTOBER 2004 APPLICATION INFORMATION circuit layout considerations To achieve the levels of high performance of the TLV27x, follow proper printed-circuit board design techniques. A general set of guidelines is given in the following. D Ground planes—It is highly recommended that a ground plane be used on the board to provide all components with a low inductive ground connection. However, in the areas of the amplifier inputs and output, the ground plane can be removed to minimize the stray capacitance. D Proper power supply decoupling—Use a 6.8-µF tantalum capacitor in parallel with a 0.1-µF ceramic capacitor on each supply terminal. It may be possible to share the tantalum among several amplifiers depending on the application, but a 0.1-µF ceramic capacitor should always be used on the supply terminal of every amplifier. In addition, the 0.1-µF capacitor should be placed as close as possible to the supply terminal. As this distance increases, the inductance in the connecting trace makes the capacitor less effective. The designer should strive for distances of less than 0.1 inches between the device power terminals and the ceramic capacitors. D Sockets—Sockets can be used but are not recommended. The additional lead inductance in the socket pins will often lead to stability problems. Surface-mount packages soldered directly to the printed-circuit board is the best implementation. D Short trace runs/compact part placements—Optimum high performance is achieved when stray series inductance has been minimized. To realize this, the circuit layout should be made as compact as possible, thereby minimizing the length of all trace runs. Particular attention should be paid to the inverting input of the amplifier. Its length should be kept as short as possible. This helps to minimize stray capacitance at the input of the amplifier. D Surface-mount passive components—Using surface-mount passive components is recommended for high performance amplifier circuits for several reasons. First, because of the extremely low lead inductance of surface-mount components, the problem with stray series inductance is greatly reduced. Second, the small size of surface-mount components naturally leads to a more compact layout thereby minimizing both stray inductance and capacitance. If leaded components are used, it is recommended that the lead lengths be kept as short as possible. 14 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 µ SGLS275 − OCTOBER 2004 APPLICATION INFORMATION general power dissipation considerations For a given θJA, the maximum power dissipation is shown in Figure 29 and is calculated by the following formula: P D + Where: ǒ T Ǔ –T MAX A q JA PD = Maximum power dissipation of TLV27x IC (watts) TMAX = Absolute maximum junction temperature (150°C) TA = Free-ambient air temperature (°C) θJA = θJC + θCA θJC = Thermal coefficient from junction to case θCA = Thermal coefficient from case to ambient air (°C/W) MAXIMUM POWER DISSIPATION vs FREE-AIR TEMPERATURE 2 Maximum Power Dissipation − W 1.75 PDIP Package Low-K Test PCB θJA = 104°C/W 1.5 1.25 TJ = 150°C MSOP Package Low-K Test PCB θJA = 260°C/W SOIC Package Low-K Test PCB θJA = 176°C/W 1 0.75 0.5 0.25 SOT-23 Package Low-K Test PCB θJA = 324°C/W 0 −55 −40 −25 −10 5 20 35 50 65 80 95 110 125 TA − Free-Air Temperature − °C NOTE A: Results are with no air flow and using JEDEC Standard Low-K test PCB. Figure 29. Maximum Power Dissipation vs Free-Air Temperature POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 15 µ SGLS275 − OCTOBER 2004 APPLICATION INFORMATION macromodel information Macromodel information provided was derived using Microsim Parts Release 9.1, the model generation software used with Microsim PSpice . The Boyle macromodel (see Note 2) and subcircuit in Figure 30 are generated using TLV27x typical electrical and operating characteristics at TA = 25°C. Using this information, output simulations of the following key parameters can be generated to a tolerance of 20% (in most cases): D Maximum positive output voltage swing D Unity-gain frequency D Maximum negative output voltage swing D Common-mode rejection ratio D Slew rate D Phase margin D Quiescent power dissipation D DC output resistance D Input bias current D AC output resistance D Open-loop voltage amplification D Short-circuit output current limit NOTE 2: G. R. Boyle, B. M. Cohn, D. O. Pederson, and J. E. Solomon, “Macromodeling of Integrated Circuit Operational Amplifiers,” IEEE Journal of Solid-State Circuits, SC-9, 353 (1974). 3 99 VDD + egnd rd1 rd2 rss ro2 css fb rp − c1 7 11 12 + c2 vlim 1 r2 + 9 6 IN+ − vc D D 8 + − vb ga 2 G G − IN− ro1 gcm ioff 53 S S OUT dp 91 10 iss GND 4 dlp + dc − ve + 54 vlp − + hlim − 5 92 − vln + de *DEVICE=amp_tlv27x_highVdd,OP AMP,NJF,INT * amp_tlv_27x_highVdd operational amplifier ”macromodel” * subcircuit updated using Model Editor release 9.1 on 05/15/00 * at 14:40 Model Editor is an OrCAD product. * * connections: non-inverting input * | inverting input * | | positive power supply * | | | negative power supply * | | | | output * | | | | | .subckt amp_tlv27x_highVdd 1 2 3 4 5 * c1 11 12 457.48E−15 c2 6 7 5.0000E−12 css 10 99 1.1431E−12 dc 5 53 dy de 54 5 dy dlp 90 91 dx dln 92 90 dx dp 4 3 dx egnd 99 0 poly(2) (3,0) (4,0) 0 .5 .5 fb 7 99 poly(5) vb vc ve vlp vln 0 176.02E6 −1E3 1E3 180E6 −180E6 ga gcm iss hlim j1 J2 r2 rd1 rd2 ro1 ro2 rp rss vb vc ve vlim vlp vln .model .model .model .model .ends 6 0 10 90 11 12 6 3 3 8 7 3 10 9 3 54 7 91 0 dx dy jx1 jx2 0 11 12 16.272E−6 6 10 99 6.8698E−9 4 dc 1.3371E−6 0 vlim 1K 2 10 jx1 1 10 jx2 9 100.00E3 11 61.456E3 12 61.456E3 5 10 99 10 4 150.51E3 99 149.58E6 0 dc 0 53 dc .78905 4 dc .78905 8 dc 0 0 dc 14.200 92 dc 14.200 D(Is=800.00E−18) D(Is=800.00E−18 Rs=1m Cjo=10p) NJF(Is=500.00E−15 Beta=198.03E−6 Vto=−1) NJF(Is=500.00E−15 Beta=198.03E−6 Vto=−1) Figure 30. Boyle Macromodel and Subcircuit PSpice and Parts are trademarks of MicroSim Corporation. 16 90 dln POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 PACKAGE OPTION ADDENDUM www.ti.com 25-Feb-2005 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Eco Plan (2) Qty TLV271QDBVRQ1 ACTIVE SOT-23 DBV 5 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TLV271QDRQ1 ACTIVE SOIC D 8 2500 Pb-Free (RoHS) CU NIPDAU Level-2-250C-1 YEAR/ Level-1-235C-UNLIM TLV272QDRQ1 ACTIVE SOIC D 8 2500 Pb-Free (RoHS) CU NIPDAU Level-2-250C-1 YEAR/ Level-1-235C-UNLIM TLV274QDRQ1 ACTIVE SOIC D 14 2500 Pb-Free (RoHS) CU NIPDAU Level-2-250C-1 YEAR/ Level-1-235C-UNLIM TLV274QPWRQ1 ACTIVE TSSOP PW 14 2000 None CU NIPDAU Level-1-250C-UNLIM Lead/Ball Finish MSL Peak Temp (3) (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - May not be currently available - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. None: Not yet available Lead (Pb-Free). Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Green (RoHS & no Sb/Br): TI defines "Green" to mean "Pb-Free" and in addition, uses package materials that do not contain halogens, including bromine (Br) or antimony (Sb) above 0.1% of total product weight. (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDECindustry standard classifications, and peak solder temperature. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis. Addendum-Page 1 MECHANICAL DATA MTSS001C – JANUARY 1995 – REVISED FEBRUARY 1999 PW (R-PDSO-G**) PLASTIC SMALL-OUTLINE PACKAGE 14 PINS SHOWN 0,30 0,19 0,65 14 0,10 M 8 0,15 NOM 4,50 4,30 6,60 6,20 Gage Plane 0,25 1 7 0°– 8° A 0,75 0,50 Seating Plane 0,15 0,05 1,20 MAX PINS ** 0,10 8 14 16 20 24 28 A MAX 3,10 5,10 5,10 6,60 7,90 9,80 A MIN 2,90 4,90 4,90 6,40 7,70 9,60 DIM 4040064/F 01/97 NOTES: A. B. C. D. All linear dimensions are in millimeters. This drawing is subject to change without notice. Body dimensions do not include mold flash or protrusion not to exceed 0,15. Falls within JEDEC MO-153 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or service without notice. Customers should obtain the latest relevant information before placing orders and should verify that such information is current and complete. All products are sold subject to TI’s terms and conditions of sale supplied at the time of order acknowledgment. TI warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with TI’s standard warranty. Testing and other quality control techniques are used to the extent TI deems necessary to support this warranty. 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