TOSHIBA TPCP8004

TPCP8004
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ)
TPCP8004
Notebook PC Applications
Unit: mm
Portable Equipment Applications
0.33 ± 0.05
0.05
Small footprint due to a small and thin package
•
High speed switching
•
Small gate charge: Qg = 26nC (typ.)
5
0.475
•
Low drain-source ON-resistance: RDS(ON) = 7mΩ(typ.)
•
High forward transfer admittance: |Yfs| = 21S (typ.)
•
Low leakage current: IDSS = 10μA (max) (VDS = 30V)
•
Enhancement mode: Vth = 1.3 to 2.5V (VDS = 10V, ID = 1mA)
1
4
2.8 ± 0.1
•
A
M
2.4 ± 0.1
8
B
0.65
2.9 ± 0.1
0.05
M
B
A
0.8 ± 0.05
0.025 S
0.17 ± 0.02
S
＋0.1
0.28 －0.11
＋0.13
1.12 －0.12
＋0.13
1.12 －0.12
Absolute Maximum Ratings (Ta=25°C)
Characteristics
0.28 ＋0.1
－0.11
Symbol
Rating
Unit
Drain-source voltage
VDSS
30
V
Drain-gate voltage (RGS=20 kΩ)
VDGR
30
V
JEDEC
⎯
Gate-source voltage
VGSS
±20
V
JEITA
⎯
(Note 1)
ID
8.3
Pulse (Note 1)
33.2
A
TOSHIBA
IDP
Drain current
DC
(t = 5 s)
Drain power dissipation
W
PD
1.68
PD
0.84
W
Single-pulse avalanche energy
(Note 3)
EAS
17.9
mJ
Avalanche current
IAR
8.3
A
Repetitive avalanche energy
(Note 4)
EAR
0.021
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
(Note 2a)
(t = 5 s)
Drain power dissipation
(Note 2b)
1,2,3 ：SOURCE
4
：GATE
5,6,7,8：DRAIN
2-3V1K
Weight: 0.017g(typ.)
Circuit Configuration
8
7
6
5
1
2
3
4
Marking (Note 5)
Note: For Notes 1 to 5, refer to the next page.
8
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.)
are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
7
6
5
8004
※
1
2
3
4
Lot No.
1
2008-12-18
TPCP8004
Thermal Characteristics
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to ambient
(t = 5 s)
(Note 2a)
Rth (ch-a)
74.4
°C/W
Thermal resistance, channel to ambient
(t = 5 s)
(Note 2b)
Rth (ch-a)
148.8
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a)
(b) Device mounted on a glass-epoxy board (b)
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
(a)
(b)
Note 3: VDD =24V, Tch = 25°C (initial), L =0.2mH, RG = 1 Ω, IAR =8.3 A
Note 4: Repetitive rating: pulse width limited by max channel temperature
Note 5: ●on the lower left of the marking indicates Pin 1.
※ Weekly code: (Three digits)
Week of manufacture
(01 for the first week of the year, continuing up to 52 or 53)
Year of manufacture
(The last digit of the year)
2
2008-12-18
TPCP8004
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±20 V, VDS = 0 V
⎯
⎯
±100
nA
Drain cutoff current
IDSS
VDS = 30 V, VGS = 0 V
⎯
⎯
10
μA
V (BR) DSS ID = 10 mA, VGS = 0 V
30
⎯
⎯
V (BR) DSX ID = 10 mA, VGS = −20 V
10
⎯
⎯
VDS = 10 V, ID = 1mA
1.3
⎯
2.5
VGS = 4.5 V, ID = 4.2A
⎯
10.5
14
VGS = 10 V, ID = 4.2A
⎯
7
8.5
VDS = 10 V, ID = 4.2A
10
21
⎯
⎯
1270
⎯
⎯
240
⎯
⎯
380
⎯
⎯
12
⎯
⎯
23
⎯
⎯
9
⎯
⎯
35
⎯
⎯
26
⎯
⎯
3.8
⎯
⎯
8
⎯
Gate threshold voltage
Vth
Drain-source ON-resistance
RDS (ON)
Forward transfer admittance
|Yfs|
Input capacitance
Ciss
Reverse transfer capacitance
Crss
Output capacitance
Coss
Rise time
VDS =10 V, VGS =0 V,
f = 1MHz
tr
VGS
Turn-on time
ton
0V
Turn-off time
Total gate charge
(gate-source plus gate-drain)
4.7 Ω
Switching time
Fall time
tf
toff
Qg
Gate-source charge 1
Qgs1
Gate-drain (“Miller”) charge
Qgd
ID = 4.2A
10 V
RL =3.57Ω
Drain-source breakdown voltage
VOUT
VDD ≈ 15 V
Duty ≤ 1%, tw = 10 μs
VDD ≈ 24 V, VGS =10 V,
ID =8.3 A
V
V
mΩ
S
pF
ns
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Drain reverse current Pulse (Note 1)
IDRP
⎯
⎯
⎯
33.2
A
Forward voltage (diode)
VDSF
⎯
⎯
−1.2
V
IDR = 8.3 A, VGS = 0 V
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2008-12-18
TPCP8004
ID – VDS
4 3.5 3.3 3.2
10
ID – VDS
20
10
10
3.1
4
3.5
5
6
ID
(A)
3.0
8
6
2.9
4
2.8
VGS = 2.7 V
2
0
Drain current
Drain current
ID
(A)
8
Common source
Ta = 25°C
Pulse test
0
3.3
5
0.2
0.4
0.6
Drain−source voltage
0.8
VDS
16
Common source
Ta = 25°C
Pulse test
6
8
3.2
12
3.1
8
3.0
2.9
4
2.8
VGS = 2.7 V
0
1
0
(V)
0.4
0.8
Drain-source voltage
ID – VGS
VDS
2
(V)
0.4
VDS (V)
Common source
VDS = 10 V
Pulse test
30
20
Drain−source voltage
ID
(A)
1.6
VDS – VGS
40
Drain current
1.2
Ta = −55°C
10
100
25
Common source
Ta = 25°C
Pulse test
0.3
0.2
0.1
ID = 8.3 A
4.2
2.1
0
0
1
2
3
5
4
Gate−source voltage
VGS
0
6
0
(V)
2
4
Gate−source voltage
|Yfs| – ID
Ta = −55°C
25
1
Common source
VDS = 10 V
Pulse test
1
Drain current
10
ID
Drain−source ON resistance
RDS (ON) (mΩ)
Forward transfer admittance
|Yfs| (S)
100
100
0.1
0.1
8
VGS
10
(V)
RDS (ON) – ID
100
10
6
(A)
4.5
10
VGS = 10 V
1
0.1
100
Common source
Ta = 25°C
Pulse test
1
Drain current
4
10
ID
100
(A)
2008-12-18
TPCP8004
RDS (ON) – Ta
IDR – VDS
25
100
(A)
IDR
20
ID = 4.2, 8.3
Drain reverse current
15
2.1
VGS = 4.5 V
10
ID = 2.1, 4.2, 8.3 A
5
VGS = 10 V
0
−80
−40
0
40
Ambient temperature
80
120
Ta
10
VGS = 0 V
Common source
Ta = 25°C
Pulse test
−0.2
0
(°C)
−0.4
Capacitance – VDS
Vth (V)
Gate threshold voltage
VDS
(V)
80
120
−1.2
Coss
Crss
100
Common source
VGS = 0 V
f = 1 MHz
Ta = 25°C
1
10
1.5
1
Common source
VDS = 10 V
ID = 1mA
Pulse test
0.5
0
−80
100
VDS
2
(V)
Drain−source voltage
1
(2)
0.5
0
40
80
Ambient temperature
Ta
50
160
(°C)
120
Ta
40
30
(°C)
12
12
VDS
6
20
VDD = 24V
4
0
10
20
Total gate charge
5
8
10
0
160
20
Common source
ID = 8.3 A
Ta = 25°C
16
Pulse test
VGS
VDS (V)
(W)
1.5
40
Dynamic input/output
characteristics
(1) Device mounted on a
glass-epoxy board (a) (Note 2a)
(2) Device mounted on a
glass-epoxy board (b) (Note 2b)
t=5s
(1)
0
Ambient temperature
PD – Ta
2
−40
(V)
(pF)
1000
C
Capacitance
−1
Vth – Ta
Ciss
Drain−source voltage
PD
−0.8
2.5
10
0.1
Drain power dissipation
−0.6
Drain−source voltage
10000
0
1
10
1
160
3
4.5
30
Qg
40
Gate−source voltage
Drain-source ON resistance
RDS (ON) (mΩ)
Common source
Pulse test
0
(nC)
2008-12-18
TPCP8004
rth − tw
Transient thermal impedance
rth (°C/W)
1000
(1) Device mounted on a glass-epoxy board (a) (Note 2a)
(2) Device mounted on a glass-epoxy board (b) (Note 2b)
(2)
100
(1)
10
1
Single pulse
0.1
0.0001
0.001
0.1
0.01
1
Pulse width
tw
10
100
1000
(s)
Safe operating area
100
(A)
ID max (Pulse) *
1 ms *
ID
10
Drain current
t = 10 ms *
1
* Single pulse
Ta = 25°C
Curves must be derated
linearly with increase in
temperature.
0.1
0.1
1
Drain−source voltage
VDSS max
10
VDS
100
(V)
6
2008-12-18
TPCP8004
RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively “Product”) without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must
also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document,
the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA
Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are
solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the
appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any
information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other
referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO
LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS.
• Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.
Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or
reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious
public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used
in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling
equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric
power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this
document.
• Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.
• Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any
applicable laws or regulations.
• The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any
infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
• ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
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FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.
• Do not use or otherwise make available Product or related software or technology for any military purposes, including without
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile
technology products (mass destruction weapons). Product and related software and technology may be controlled under the
Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product
or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.
• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.
7
2008-12-18