TRF1600 SPAS094A – FEBRUARY 2010 – REVISED MAY 2011 www.ti.com TRUE RMS RF POWER DETECTOR Check for Samples: TRF1600 FEATURES • • • • • 1 • • • • • RF True RMS Power Detector RMS to DC Conversion Up to 2 GHz Waveform and Modulation Independent (CW, GSM, WCDMA, TDMA, HSUPA) Linear-In-dB Output Input Dynamic Range of 28 dB (–29 dBm to –1 dBm) External Input Pin 6.7-mA Typical Operating Current 5-µA Maximum Shutdown Current Operating Temperature Range: –20ºC to 85ºC Small 2-mm x 2-mm QFN 6 Pin Package APPLICATIONS • • • Cellular Handsets (GSM, CDMA, TDMA) Power Amplifier Control Loops Transmitter Power Measurement and Control DESCRIPTION The TRF1600 is a true RMS power detector with a 28-dB dynamic input range and a linear-to-dB DC output. It is intended for use in wireless handheld devices such as cell phones and PDAs to measure and control PA output power accurately independent of the modulation scheme. The device is designed to operate off of a lithium-ion battery (2.7 V to 5.5 V, 6 V tolerant) or a regulated supply. A low input signal at the enable pin puts the device in shut-down mode and supply current consumption is reduced to <5 µA. When asserted high the device enters active mode and outputs a DC voltage proportional to the RMS value of the input power expressed in dBm. Table 1. ORDERING INFORMATION (1) (1) (2) TA PACKAGE (2) ORDERABLE PART NUMBER –20ºC to 85ºC DRV TRF1600DRVR For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI web site at www.ti.com. Package drawings, thermal data, and symbolization are available at www.ti.com/packaging. 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2010–2011, Texas Instruments Incorporated TRF1600 SPAS094A – FEBRUARY 2010 – REVISED MAY 2011 www.ti.com BLOCK DIAGRAM VBAT EN en Voltage Regulator RFIN VOUT CIN* RMS Detector GND CF CFILTER * CIN may be omitted if the DC level of the RF input signal is at ground. 2 Copyright © 2010–2011, Texas Instruments Incorporated TRF1600 SPAS094A – FEBRUARY 2010 – REVISED MAY 2011 www.ti.com PINOUT RFIN 1 6 VBAT GND 2 5 EN 3 4 CF VOUT Table 2. TERMINAL FUNCTIONS TERMINAL NAME NO. I/O I DESCRIPTION RFIN 1 RF input GND 2 VOUT 3 O Output of the device CF 4 I Filter capacitor. Pin needs to be connected to an off-chip filter capacitor in the application. EN 5 I Enable pin/Vprog VBAT 6 Ground Input supply pin to the device Copyright © 2010–2011, Texas Instruments Incorporated 3 TRF1600 SPAS094A – FEBRUARY 2010 – REVISED MAY 2011 www.ti.com ABSOLUTE MAXIMUM RATINGS (1) All voltages values are with respect to GND. Over operating free-air temperature range (unless otherwise noted). VALUE UNIT Unregulated input battery voltage -0.5 to 6.0 V EN -0.5 to 3.6 V VOUT -0.5 to 3.6 V 6 dBm PRFIN (max RF input power) θJA Thermal resistance, junction to ambient 140 °C/W PD Continuous power dissipation 50 mW HBM (human body model) ESD integrity 2k CMD (charged device model) 500 IEC Contact – VCC pin (2) 8k IEC Air – VCC pin (2) 15k V TA Operating ambient temperature –40 to 125 °C TJ Operating junction temperature 125 °C TS Storage temperature –40 to 125 °C (1) (2) Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. IEC ESD tests performed on VCC pin with five shunt capacitors ranging from 10 pF to 10 µF. This is meant to evaluate the performance of the device when it is powered directly from a battery with these capacitors used as bypass capacitors on the same PC board. RECOMMENDED OPERATING CONDITIONS over operating free-air temperature range (unless otherwise noted) MIN NOM MAX UNIT VBAT Unregulated input battery voltage 2.7 5.5 fIN Input frequency range 800 2000 0 3.3 V 35 mW –20 85 °C 0 3000 pF EN pin voltage PD Continuous power dissipation TA Operating ambient temperature CFILTER V MHz ELECTRICAL CHARACTERISTICS VBAT = 3.0 ±5%, TA = –20 to 85ºC, CFILTER = 820 pF ±10%, unless otherwise specified. PARAMETER TEST CONDITIONS MIN TYP MAX UNIT SUPPLY CURRENT VBAT Battery voltage IBAT, ACTIVE Supply current EN = HIGH 2.7 IBAT, IDLE Supply current, idle EN = LOW RF input power present IBAT, S/D Supply current, shutdown EN = LOW No RF input power present 6.7 5.5 V 8.5 mA 10 µA 5 µA INPUT fIN Input frequency 800 2000 MHz PRFIN800 Input power, 800 MHz Referred to 50-Ω Zin –34 –1 dBm PRFIN2000 Input power, 2 GHz Referred to 50-Ω Zin –29 –1 dBm Max Output voltage maximum –1 dBm, 800 MHz 1.2 1.55 1.7 V Max Output voltage maximum –1 dBm, 2 GHz 1 1.32 1.55 V VOUT No RF Output voltage no RF No RF present 0 160 300 mV VOUT Output voltage range Over specified dynamic range OUTPUT VOUT VOUT 4 Range 1.27 V Copyright © 2010–2011, Texas Instruments Incorporated TRF1600 SPAS094A – FEBRUARY 2010 – REVISED MAY 2011 www.ti.com ELECTRICAL CHARACTERISTICS (continued) VBAT = 3.0 ±5%, TA = –20 to 85ºC, CFILTER = 820 pF ±10%, unless otherwise specified. PARAMETER VOUT,GAIN TEST CONDITIONS Output voltage gain 10-dB log conformance error over temperature (1) See Appendix A.1 1-dB log conformance error Ideal 1-dB power step Straight line 5-dB step error (2) MIN TYP MAX 30 35 40 mV/dB –1 1 dB –0.3 0.3 dB See Appendix A.2 UNIT 0.06 dB Output variation due to modulation at same input power Anywhere in dynamic range. (AM modulation 100% modulation depth with a 1-MHz tone) 0.1 TCVOUT Response temperature coefficient (1) PRFIN = –4 dBm See Appendix A.3 2.2 mdB/°C ΔTCVOUT Response temperature sensitivity spread - 1σ (1) PRFIN = –4 dBm See Appendix A.3 4.1 mdB/°C ΔVOUT_TEMP Output voltage repeatability over temperature (1) PSRR Power supply rejection ratio VBAT = 2.7 V to 5.5 V VOUT, NOISE Output referred noise Integrated over bandwidth 1 kHz – 6.5 kHz ROUT, EN1 Output impedance EN = HIGH IOUT, EN0 Output leakage EN = LOW tSAMPLE Sampling time (time to valid output) EN = HIGH PRFIN = MAX VOUT 10% to 90% tWAKEUP Wakeup time EN LOW to HIGH No RF input VOUT to 90% 0.04 0.35 dB 0.11 30 dB dB 100 200 µVRMS 9 50 Ω 3 µA 13 µs 13 µs 0.6 V 1 µA LOGIC LEVEL INPUTS (EN) VIL Input low level VIH Input high level 1.1 IIH, IIH Input bias current –1 (1) (2) V Parameters require temperature testing. Limits based on 3σ statistics characterized on a limited number of samples. Limits not guaranteed in production. Limits based on 3σ statistics characterized on a limited number of samples. Limits not guaranteed in production. Copyright © 2010–2011, Texas Instruments Incorporated 5 TRF1600 SPAS094A – FEBRUARY 2010 – REVISED MAY 2011 www.ti.com TYPICAL PERFORMANCE CHARACTERISITICS CURRENT CONSUMPTION vs TEMPERATURE RF INPUT REFLECTION COEFFICIENT (800 MHz TO 2 GHz) 8.5 8 Icc (mA) 7.5 7 6.5 6 5.5 -2 0 -5 10 25 40 55 70 85 o Temperature ( C) Figure 1. Figure 2. OUTPUT VOLTAGE vs INPUT POWER AT 800 MHz OUTPUT VOLTAGE vs INPUT POWER AT 2 GHz 2 2 85 C 25C 25 C -20 C 1.5 Vout (V) 1.5 Vout (V) 85C 1 0 - 30 -25 -20 - 15 Pin (dBm) Figure 3. 6 1 0.5 0.5 -35 -20 C -10 -5 0 0 - 30 -25 - 20 -15 - 10 -5 0 Pin ( dBm) Figure 4. Copyright © 2010–2011, Texas Instruments Incorporated TRF1600 SPAS094A – FEBRUARY 2010 – REVISED MAY 2011 www.ti.com 1-dB LOG CONFORMANCE ERROR AT 800 MHz 1-dB LOG CONFORMANCE ERROR AT 2 GHz 0.3 0.3 85C 25 C 0.2 -20 C 0.1 0 - 0.1 -20 C 0.1 Erro r ( dB) Erro r ( dB) 85 C 25C 0.2 0 - 0.1 - 0.2 - 0.2 - 0.3 -35 -30 - 25 -20 -1 5 - 10 -5 0 - 0.3 -30 Pin (dBm) -25 -20 Figure 5. 10-dB LOG CONFORMANCE ERROR AT 800 MHz 85 C -20 C - 20 C 0.2 5 Erro r ( dB) Erro r ( dB) 0 10-dB LOG CONFORMANCE ERROR AT 2 GHz 0.25 0 0 - 0.2 5 - 0.25 -0.5 - 0.5 -20 - 15 - 10 Pin (dBm) -5 -20 0 -15 0 DEVIATION DUE TO MODULATION (Reference Measurement Channel 12.2, 3GPP TS 34.121-1 V8.7.0, Table C2.1.1, 2 GHz 0 .2 85 C 0.15 -5 Figure 8. DEVIATION DUE TO MODULATION (Reference Measurement Channel 12.2, 3GPP TS 34.121-1 V8.7.0, Table C2.1.1, 800 MHz) 0.2 - 10 Pin ( dBm) Figure 7. 0.15 25 C -2 0 C 85 C 25 C -20 C 0.1 0 .1 0.05 0.05 Erro r ( dB) Erro r ( dB) -5 0.5 85 C 0 -0.05 0 -0.05 -0.1 -0 .1 -0.15 -0.15 -0.2 -35 - 10 Figure 6. 0.5 - 25 -15 Pin (dBm) -0 .2 -30 -25 -20 -1 5 -10 Pin (dBm) Figure 9. Copyright © 2010–2011, Texas Instruments Incorporated -5 0 - 30 -25 - 20 -1 5 -10 -5 0 Pin (dBm) Figure 10. 7 TRF1600 SPAS094A – FEBRUARY 2010 – REVISED MAY 2011 www.ti.com DEVIATION DUE TO MODULATION (HS-DPCCH, 3GPP TS 34.121-1 V8.7.0, Table C10.1.4, Subtest 1, 800 MHz) 0.2 DEVIATION DUE TO MODULATION (HS-DPCCH, 3GPP TS 34.121-1 V8.7.0, Table C10.1.4, Subtest 1, 2 GHz) 0.2 85C 0.15 0.15 25C 25 C -2 0 C 0.1 0.1 0.05 0.05 Erro r ( dB) Er ror ( dB) -20 C 85 C 0 - 0.05 0 -0.05 - 0.1 -0.1 - 0.15 -0.15 - 0.2 -0.2 -35 - 30 -25 - 20 -15 -10 -5 0 -30 -25 - 20 Pin ( dBm) Figure 11. 0.2 25 C -20 C 0.1 Err or (dB) Erro r ( dB) 0.1 0.05 0 -0.05 0.05 0 - 0.05 -0.1 - 0.1 -0.15 - 0.15 -0.2 - 0.2 -30 -25 -20 -1 5 -10 -5 - 30 0 -25 -20 Pin (dBm) 0.2 85 C 0 85 C 25 C -2 0 C -2 0 C 0.1 Erro r ( dB) Erro r ( dB) 0.15 25 C 0.05 0 -0.05 0.05 0 -0.05 -0 .1 -0.1 -0.15 -0.15 -0 .2 -30 - 25 -20 - 15 Pin (dBm) Figure 15. 8 -5 DEVIATION DUE TO MODULATION (HS-DPCCH, 3GPP TS 34.121-1 V8.7.0, Table C10.1.4, Subtest 3, 2 GHz) 0 .2 0 .1 -10 Figure 14. DEVIATION DUE TO MODULATION (HS-DPCCH, 3GPP TS 34.121-1 V8.7.0, Table C10.1.4, Subtest 3, 800 MHz) 0.15 - 15 Pin (dBm) Figure 13. - 35 0 85 C 0.15 25 C -2 0 C -35 -5 DEVIATION DUE TO MODULATION (HS-DPCCH, 3GPP TS 34.121-1 V8.7.0, Table C10.1.4, Subtest 2, 2 GHz) 85 C 0.15 -10 Figure 12. DEVIATION DUE TO MODULATION (HS-DPCCH, 3GPP TS 34.121-1 V8.7.0, Table C10.1.4, Subtest 2, 800 MHz) 0.2 -15 Pin (dBm) -10 -5 0 -0.2 -30 -25 - 20 -15 -10 -5 0 Pin (dBm) Figure 16. Copyright © 2010–2011, Texas Instruments Incorporated TRF1600 SPAS094A – FEBRUARY 2010 – REVISED MAY 2011 www.ti.com DEVIATION DUE TO MODULATION (HS-DPCCH, 3GPP TS 34.121-1 V8.7.0, Table C10.1.4, Subtest 4, 800 MHz) 0.2 DEVIATION DUE TO MODULATION (HS-DPCCH, 3GPP TS 34.121-1 V8.7.0, Table C10.1.4, Subtest 4, 2 GHz) 0.2 85 C 0.15 85 C 0.15 25 C 25 C -20 C 0.1 0.1 0.05 0.05 Erro r ( dB) Erro r ( dB) -2 0 C 0 -0.05 0 - 0.05 -0.1 - 0.1 -0.15 - 0.15 - 0.2 -0.2 -35 -30 - 25 -20 - 15 -10 -5 - 30 0 -25 - 20 Pin (dBm) Figure 17. 0 .2 25 C -20 C 0 .1 0.05 0.05 Err or (dB) Erro r ( dB) 0.1 0 -0.05 0 -0.05 -0.1 -0 .1 -0.15 -0.15 -0 .2 -0.2 -30 - 25 -20 - 15 -10 -5 - 30 0 -25 - 20 Pin (dBm) 0.2 0 85 C 0.15 25 C 25 C -2 0 C -2 0 C 0.1 0.1 0.05 0.05 Erro r ( dB) Erro r ( dB) -5 DEVIATION DUE TO MODULATION (HS-DPCCH and E-DCH, 3GPP TS 34.121-1 V8.7.0, Table C11.1.3, Subtest 2, 2 GHz) 85 C 0.15 -10 Figure 20. DEVIATION DUE TO MODULATION (HS-DPCCH and E-DCH, 3GPP TS 34.121-1 V8.7.0, Table C11.1.3, Subtest 2, 800 MHz) 0.2 -15 Pin (dBm) Figure 19. 0 -0.05 0 -0.05 -0.1 -0.1 -0.15 -0.15 -0.2 -3 5 0 85 C 0.15 25 C -2 0 C -3 5 -5 DEVIATION DUE TO MODULATION (HS-DPCCH and E-DCH, 3GPP TS 34.121-1 V8.7.0, Table C11.1.3, Subtest 1, 2 GHz) 85 C 0.15 -10 Figure 18. DEVIATION DUE TO MODULATION (HS-DPCCH and E-DCH, 3GPP TS 34.121-1 V8.7.0, Table C11.1.3, Subtest 1, 800 MHz) 0.2 -1 5 Pin (dBm) -0.2 -30 - 25 -20 - 15 -10 Pin (dBm) Figure 21. Copyright © 2010–2011, Texas Instruments Incorporated -5 0 -30 -25 - 20 -15 -10 -5 0 Pin (dBm) Figure 22. 9 TRF1600 SPAS094A – FEBRUARY 2010 – REVISED MAY 2011 www.ti.com DEVIATION DUE TO MODULATION (HS-DPCCH and E-DCH, 3GPP TS 34.121-1 V8.7.0, Table C11.1.3, Subtest 3, 800 MHz) 0.2 DEVIATION DUE TO MODULATION (HS-DPCCH and E-DCH, 3GPP TS 34.121-1 V8.7.0, Table C11.1.3, Subtest 3, 2 GHz) 0 .2 85 C 0.15 0.15 25 C -2 0 C 0 .1 Err or (dB) Erro r ( dB) 25 C -20 C 0.1 0.05 0 -0.05 0.05 0 -0.05 -0.1 -0 .1 -0.15 -0.15 -0.2 -35 85 C - 30 -25 - 20 -15 - 10 -5 -0 .2 - 30 0 -25 - 20 Figure 23. 0.2 25C 0.15 0.1 0.05 0.05 0 -0.05 85 C 25 C 0 -0.05 -0.1 -0.1 -0.15 -0.15 -0.2 -0.2 -30 -25 - 20 -15 - 10 -5 0 -30 -25 - 20 Pin ( dBm) 0.2 0.2 85 C 0.15 25 C 0 85 C 25 C -20 C 0.1 0.1 0.05 0.05 Err or (dB) Err or (dB) -5 DEVIATION DUE TO MODULATION (HS-DPCCH and E-DCH, 3GPP TS 34.121-1 V8.7.0, Table C11.1.3, Subtest 5, 2 GHz) -20 C 0 - 0.05 0 - 0.05 - 0.1 - 0.1 - 0.15 - 0.15 - 0.2 -30 - 25 -20 -15 Pin (dBm) Figure 27. 10 -1 0 Figure 26. DEVIATION DUE TO MODULATION (HS-DPCCH and E-DCH, 3GPP TS 34.121-1 V8.7.0, Table C11.1.3, Subtest 5, 800 MHz) 0.15 -15 Pin ( dBm) Figure 25. - 0.2 - 35 0 -2 0 C 0.1 Erro r ( dB) Erro r ( dB) -20 C -35 -5 DEVIATION DUE TO MODULATION (HS-DPCCH and E-DCH, 3GPP TS 34.121-1 V8.7.0, Table C11.1.3, Subtest 4, 2 GHz) 85C 0.15 -10 Figure 24. DEVIATION DUE TO MODULATION (HS-DPCCH and E-DCH, 3GPP TS 34.121-1 V8.7.0, Table C11.1.3, Subtest 4, 800 MHz) 0.2 -15 Pin (dBm) Pin ( dBm) -1 0 -5 0 - 30 -25 -20 - 15 -10 -5 0 Pin (dBm) Figure 28. Copyright © 2010–2011, Texas Instruments Incorporated TRF1600 SPAS094A – FEBRUARY 2010 – REVISED MAY 2011 www.ti.com DEVIATION DUE TO MODULATION (HS-DPCCH and E-DCH with 16QAM , 3GPP TS 34.121-1 V8.7.0, Table C11.1.4, 800 MHz) 0 .2 DEVIATION DUE TO MODULATION (HS-DPCCH and E-DCH with 16QAM , 3GPP TS 34.121-1 V8.7.0, Table C11.1.4, 2 GHz) 0 .2 85 C 0.15 85 C 0.15 25 C 25 C -2 0 C 0.05 0 -0.05 0.05 0 -0.05 -0 .1 -0 .1 -0.15 -0.15 -0 .2 - 35 -20 C 0 .1 Err or (dB) Err or (dB) 0 .1 -0 .2 -30 - 25 -20 - 15 -1 0 -5 0 - 30 Pin (dBm) -25 - 20 - 15 -10 -5 0 Pin (dBm) Figure 29. Figure 30. *The input coupling capacitor on the RF input pin may be omitted if the DC voltage on this pin is at ground. Figure 31. Application Circuit Copyright © 2010–2011, Texas Instruments Incorporated 11 TRF1600 SPAS094A – FEBRUARY 2010 – REVISED MAY 2011 www.ti.com APPENDIX A: MEASUREMENT PROCEDURES 10-dB Log Conformance Error Over Temperature The 10-dB log conformance error over temperature is a measure of the change in slope of the rms detector output over temperature. The measurement is performed by taking an ideal 10-dB step in input power with a CW signal at room temperature and measuring the change in output voltage. The measurement is then repeated at a different temperature and the 10-dB log conformance error over temperature is given in dB by Equation 1. 10-dB log conformance error = 10 · ( ) DVOUT (T) ¾ -1 DVOUT (25°C) (1) This measurement is taken on a statistical sample of parts. The 3σ limits from these samples are within the limits provided in the Electrical Characteristics table. Straight Line 5-dB Step Error The straight line 5-dB step error is a measure of the maximum error that results from fitting a straight line between two points of a 5-dB step as shown in Figure 32. The straight line shown in bold represents a perfect 5-dB step, while the curved line represents the detector output (the curvature in this figure is exaggerated for explanation purposes). The maximum difference output voltage between these two curves is the straight line 5-dB step error. Vout (V) Pin (dB) 5 dB Figure 32. Straight Line 5-dB Step Error Response Temperature Coefficient & Response Temperature Sensitivity Spread - 1σ The response temperature coefficient is a measure of the change in detector output voltage for a given RF input power. The measurement is performed by measuring the detector output voltage over temperature for a set CW RF input power. The response temperature gain coefficient expressed in mdB/°C is given by Equation 2. DVOUT Response temperature gain coefficient = 1000 · ¾ VOUT,GAIN · DT (2) Where VOUT,GAIN is the output voltage gain expressed in V/dB. This measurement is taken on a statistical sample of parts. The mean of these samples are provided in the Electrical Characteristics table. The response temperature sensitivity spread - 1σ, ΔTCVOUT, is the 1σ variation in TCVOUT. 12 Copyright © 2010–2011, Texas Instruments Incorporated PACKAGE OPTION ADDENDUM www.ti.com 30-Mar-2012 PACKAGING INFORMATION Orderable Device TRF1600DRVR Status (1) PREVIEW Package Type Package Drawing SON DRV Pins Package Qty 6 3000 Eco Plan TBD (2) Lead/ Ball Finish Call TI MSL Peak Temp (3) Samples (Requires Login) Call TI (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. 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