TS27L2C,I,M LOW POWER CMOS DUAL OPERATIONAL AMPLIFIERS .. . .. ULTRA LOW CONSUMPTION : 10µA/op OUTPUT VOLTAGE CAN SWING GROUND EXCELLENT PHASE MARGIN ON CAPACITIVE LOADS STABLE AND LOW OFFSET VOLTAGE THREE INPUT OFFSET VOLTAGE SELECTIONS TO N DIP8 (Plastic Package) D SO8 (Plastic Micropackage) P TSSOP8 (Thin Shrink Small Outline Package) ORDER CODES 0oC, +70oC TS27L2C/AC/BC DESCRIPTION The TS272 series are low cost, low power dual operational amplifiers designed to operate with single or dual supplies. These operational amplifiers use the SGS-THOMSONsilicon gate CMOS process allowing an excellent consumption-speed ratio. These series are ideally suited for low consumption applications. Threepower consumptionsare available allowing to have always the best consumption-speedratio : l ICC = 10mA/amp. : TS27L2 (very low power) l ICC= 150mA/amp. : TS27M2(low power) l ICC= 1mA/amp. : TS272 (high speed) These CMOS amplifiers offer very high input impedance and extremely low input currents. The major advantageversus JFET devices is the very low input currents drift with temperature (see figure 2). June 1998 Package Temperature Range Part Number o o o o TS27L2I/AI/BI -40 C, +125 C TS27L2M/AM/BM -55 C, +125 C N D P ● ● ● ● ● ● ● ● ● Example : TS27L2ACN PIN CONNECTIONS (top view) 1 8 2 - 3 + 7 4 - 6 + 5 1 - Output 1 2 - InvertingInput 1 3 - Non-inverting Input 1 4 -V CC 5 - Non-inverting Input 2 6 - InvertingInput 2 7 - Output 2 + 8 -V CC 1/9 TS27L2C,I,M BLOCK DIAGRAM VCC Current source xI Input differential Second stage Output stage Output VCC E E MAXIMUM RATINGS Symbol VCC+ Parameter Value Unit Supply Voltage - (note 1) 18 V Vid Differential Input Voltage - (note 2) ±18 V Vi Input Voltage - (note 3) -0.3 to 18 V IO Output Current for VCC+ ≥ 15V ±30 mA Iin Input Current ±5 mA Toper Tstg o Operating Free-Air Temperature Range TS27L2C/AC/BC TS27L2I/AI/BI TS27L2M/AM/BM 0 to +70 -40 to +125 -55 to +125 C Storage Temperature Range -65 to +150 o C N ot es : 1.All vol tage val ues, except di ffer ential vol tage, are wi th respect to network ground t erminal. 2.Differ enti al vol tages are at the non-inver ti ng input termi nal with r espect to the i nvert ing input termi nal. 3.The magnitude of t he input and the output voltages must never exceed the magnitude of the posit ive supply voltage. OPERATING CONDITIONS Symbol VCC+ Vicm 2/9 Parameter Supply Voltage Common Mode Input Voltage Range Value Unit 3 to 16 V + VCC V 0 to - 1.5 T 20 T 19 T 17 T 24 T21 T18 R2 T 25 VCC T 22 T 23 T 26 T 29 T 28 T 27 Input T3 T1 T5 VCC T4 T2 C1 Input R1 T7 T6 T9 T8 T 13 T11 T 10 T 14 T 12 T16 Output T 15 TS27L2C,I,M SCHEMATIC DIAGRAM (for 1/2 TS27L2) 3/9 TS27L2C,I,M ELECTRICAL CHARACTERISTICS VCC+ = +10V, VCC- = 0V, Tamb = 25oC (unless otherwise specified) Symbol Parameter TS27L2C/AC/BC Min. Vio Input Offset Voltage VO = 1.4V, Vic = 0V Tmin. ≤ Tamb ≤ Tmax. DV io Iio Iib VOH VOL Avd GBP CMR SVR ICC Io Isink SR Max. 1.1 0.9 0.25 10 5 2 12 6.5 3 Min. Typ. Max. 1.1 0.9 0.25 10 5 2 12 6.5 3.5 Unit mV TS27L2C/I/M TS27L2AC/AI/AM TS27L2BC/BI/BM TS27L2C/I/M TS27L2AC/AI/AM TS27L2BC/BI/BM Input Offset Voltage Drift 0.7 0.7 Input Offset Current - (note 1) Vic = 5V, Vo = 5V Tmin. ≤ Tamb ≤ Tmax. 1 1 Input Bias Current - (note 1) Vic = 5V, Vo = 5V Tmin. ≤ Tamb ≤ Tmax. 1 High Level Output Voltage Vid = 100mV, R L = 1MΩ Tmin. ≤ Tamb ≤ Tmax. pA 100 200 pA 1 150 300 V 8.8 8.7 9 8.8 8.6 9 mV Low Level Output Voltage Vid = -100mV Large Signal Voltage Gain Vo = 1V to 6V, RL = 1MΩ, Vic = 5V Tmin. ≤ Tamb ≤ Tmax. 50 50 V/mV 60 45 100 60 40 100 MHz Gain Bandwidth Product Av = 40dB, RL = 1MΩ, C L = 100pF fin = 100kHz 0.1 0.1 Common Mode Rejection Ratio Vo = 1.4V, Vic = 1V to 7.4V 65 80 65 80 Supply Voltage Rejection Ratio + VCC = 5V to 10V ,Vo = 1.4V 60 80 60 80 dB dB Supply Current (per amplifier) Av = 1, no load, Vo = 5V Tmin. ≤ Tamb ≤ Tmax. 10 Output Short Circuit Current Vid = 100mV, V o = 0V 60 60 Output Sink Current Vid = -100mV, V o = VCC 45 45 0.04 0.04 Slew-Rate at Unity Gain R L = 1MΩ, CL= 100pF, Vi = 3 to 7V o µV/ C 15 17 10 15 18 µA mA mA V/µs ∅m Phase Margin at Unity Gain Av = 40dB, RL = 1MΩ, C L= 100pF 45 45 Kov Overshoot Factor 30 30 % en Equivalent Input Noise Voltage f = 1kHz, RS = 100Ω 68 68 nV √ Hz Channel Separation 120 120 dB VO1/VO2 N ote : 4/9 Typ. TS27L2I/AI/BI TS27L2M/AM/BM Degrees 1.Maxi mum val ues includi ng unavoidable i naccuracies of t he industr ial t est. TS27L2C,I,M TYPICAL CHARACTERISTICS Figure 1 : Supply Current (each amplifier) versus Supply Voltage Figure 2 : Input Bias Current versus Free Air Temperature 15 100 TAMB = 25 C AV = 1 VO = VCC / 2 INPUT BIAS CURRENT, IIB (pA) SUPPLY CURRENT, ICC (µ A) 20 10 5 VCC = 10V V i = 5V 10 1 0 4 8 12 25 16 Figure 3a : High Level Output Voltage versus High Level Output Current OUTPUT VOL TAGE, VOH (V) OUTPUT VOLTAGE, VOH (V) 20 TAMB = 25° C V ID = 100mV 3 VCC = 5V 2 VCC = 3V 1 0 -10 -8 -6 -4 -2 16 8 VCC = 10V 4 0 -50 OUTPUT VOLTAGE, VOL (V) OUTPUT VOLTAGE, VOL (V) V CC = 3V V CC = 5V T a mb = 25 C Vic = 0.5V V = -100mV id 1 2 OUTPUT CURRENT, I OL (mA) VID = 100mV -40 -30 -20 -10 0 Figure 3b : Low Level Output Voltage versus Low Level Output Current 0.4 0 TAMB = 25°C OUTPUT CURRENT, I OH (mA) 1.0 0.2 125 12 0 Figure 3a : Low Level Output Voltage versus Low Level Output Current 0.6 100 VCC = 16V OUTPUT CURRE NT, I OH (mA) 0.8 75 Figure 3b : High Level Output Voltage versus High Level Output Current 5 4 50 TEMPERATURE, TAMB (°C) SUP PLY VOLTAGE, VCC (V) 3 3 VCC = 10V VCC = 16V 2 1 T a mb = 25 C V i = 0.5V V = -100mV id 0 4 8 12 16 OUTPUT CURRENT, I OL (mA) 20 5/9 TS27L2C,I,M TYPICAL CHARACTERISTICS (continued) 50 40 GAIN (dB) 30 45 P HASE 20 P ha s e Margin Ta mb = 25 C VCC+ = 10V R L = 1M Ω C L = 100pF A VCL = 100 10 0 135 2 10 3 180 Ga in Ba ndwidth P roduct -10 10 90 4 5 10 10 10 FREQUENCY, f (Hz) 6 10 PHASE (Degrees) 0 GAIN 7 PHASE 30 T a mb = 25 C R L = 1MΩ C = 10 0pF A LV = 1 0 4 8 12 SUP P LY VOLTAGE, VCC (V) 16 EQUIVALENT INPUT NOISE VOLTAGE (nV/VHz) SLEW RATES, SR (V/µs) SR L 0.04 SR 40 0 4 4 8 12 16 80 Ta mb = 25 C R L = 1MΩ AV = 1 VCC = 10V 70 60 50 40 0 6 8 10 12 14 S UP P LY VOLTAGE, VCC (V) 20 40 60 80 10 0 300 VCC = 10V Tamb= 25 C R S = 100 Ω 200 100 0 0.02 6/9 60 Figure 10 : Input Voltage Noise versus Frequency 0.05 0.03 80 CAPACITANCE, C L (pF) Figure 9 : Slew Rate versus Supply Voltage Ta mb = 25 C R L = 1M Ω C = 100pF T amb = 25 C R L = 1M Ω C L = 100pF AV = 1 100 Figure 8 : Phase Margin versus Capacitive Load PHASE MARGIN, φ m (Degrees) MARGIN,φ m (Degrees) 60 40 120 S UP P LYVOLTAGE, VCC (V) Figure 7 : Phase Margin versus Supply Voltage 50 Figure 6 : Gain Bandwidth Product versus Supply Voltage GAIN BANDW. PROD., GBP (MHz) Figure 5 : Open Loop Frequency Response and Phase Shift 16 1 100 10 FREQUENCY (Hz) 1000 TS27L2C,I,M PM-DIP8.EPS PACKAGE MECHANICAL DATA 8 PINS - PLASTIC DIP A a1 B b b1 D E e e3 e4 F i L Z Min. Millimeters Typ. 3.32 0.51 1.15 0.356 0.204 Max. 1.65 0.55 0.304 10.92 9.75 7.95 Min. 0.020 0.045 0.014 0.008 Max. 0.065 0.022 0.012 0.430 0.384 0.313 2.54 7.62 7.62 3.18 Inches Typ. 0.131 0.100 0.300 0.300 6.6 5.08 3.81 1.52 0.125 0260 0.200 0.150 0.060 DIP8.TBL Dimensions 7/9 TS27L2C,I,M PM-SO8.EPS PACKAGE MECHANICAL DATA 8 PINS - PLASTIC MICROPACKAGE (SO) A a1 a2 a3 b b1 C c1 D E e e3 F L M S 8/9 Min. Millimeters Typ. 0.1 0.65 0.35 0.19 0.25 Max. 1.75 0.25 1.65 0.85 0.48 0.25 0.5 Min. Inches Typ. 0.026 0.014 0.007 0.010 Max. 0.069 0.010 0.065 0.033 0.019 0.010 0.020 0.189 0.228 0.197 0.244 0.004 o 45 (typ.) 4.8 5.8 5.0 6.2 1.27 3.81 3.8 0.4 0.050 0.150 4.0 1.27 0.6 0.150 0.016 o 8 (max.) 0.157 0.050 0.024 SO8.TBL Dimensions TS27L2C,I,M PACKAGE MECHANICAL DATA 8 PINS - THIN SHRINK SMALL OUTLINE PACKAGE Dim. Millimeters Min. Typ. A Max. Min. Typ. 1.20 A1 0.05 A2 0.80 b 0.19 c 0.09 D 2.90 E E1 Inches 0.15 1.00 3.00 0.05 0.01 1.05 0.031 0.30 0.007 0.20 0.003 3.10 0.114 6.40 4.30 e 4.40 o 0 l 0.50 4.50 0.039 0.041 0.15 0.012 0.118 0.122 0.169 0.173 0.177 0.025 o 0.60 0.006 0.252 0.65 k Max. o 8 0 0.75 0.09 o 8 0.0236 0.030 ORDER CODE : Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. 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