STMICROELECTRONICS TS271AC

TS271C,I,M
PROGRAMMABLE CMOS
SINGLE OPERATIONAL AMPLIFIERS
.
.
.
.
..
.
OFFSET NULL CAPABILITY (by external
compensation)
DYNAMIC CHARACTERISTICS
ADJUSTABLE BY ISET
CONSUMPTION CURRENT AND DYNAMIC
PARAMETERS ARE STABLE REGARDING
THE VOLTAGE POWER SUPPLY
VARIATIONS
OUTPUT VOLTAGE CAN SWING TO
GROUND
VERY LARGE ISET RANGE
STABLE AND LOW OFFSET VOLTAGE
THREE INPUT OFFSET VOLTAGE
SELECTIONS
DESCRIPTION
The TS271 is a low cost, low power single operational amplifier designed to operate with single or
D
SO8
(Plastic Micropackage)
N
DIP8
(Plastic Package)
ORDER CODES
Package
Temperature
Range
Part Number
N
D
0oC, +70oC
●
●
-40oC, +125oC
●
●
●
●
TS271C/AC/BC
TS271I/AI/BI
o
TS271M/AM/BM
o
-55 C, +125 C
Example : TS271ACN
dual supplies. This operational amplifier uses the
SGS-THOMSON silicon gate CMOS process giving it an excellent consumption-speed ratio. This
amplifier is ideally suited for low consumption
applications.
PIN CONNECTIONS (top view)
1
The power supply is externally programmable with
a resistor connectedbetween pins 8 and 4. It allows
to choose the best consumption-speed ratio and
supply current can be minimized according to the
required speed. This device is specified for the
following ISET current values : 1.5µA, 25µA, 130µA.
This CMOS amplifier offers very high input impedance and extremely low input currents. The major
advantage versus JFET devices is the very low
input currents drift with temperature (see figure 3).
8
2
-
7
3
+
6
4
5
1 - Offset Null 1
2 - Inverting Input
3 - Non-inverting Input
4 - V CC 5 - Offset Null 2
6 - Output
7 -V
+
CC
8 -I
SET
October 1997
1/15
TS271C,I,M
BLOCK DIAGRAM
VCC
Output
stage
Second
stage
Input
differential
Output
VCC
Offset null
E
Input
E
Iset
Input
MAXIMUM RATINGS
Symbol
VCC+
Parameter
Value
Unit
Supply Voltage - (note 1)
18
V
Vid
Differential Input Voltage - (note 2)
±18
V
Vi
Input Voltage - (note 3)
-0.3 to 18
V
IO
Output Current for VCC+ ≥ 15V
±30
mA
Iin
Input Current
±5
mA
Toper
o
Operating Free-Air Temperature Range
C
TS271C/AC/BC
TS271I/AI/BI
TS271M/AM/BM
Tstg
Storage Temperature Range
0 to +70
-40 to +125
-55 to +125
-65 to +150
o
C
Notes : 1. All voltage values, except differential voltage, are with respect to network ground terminal.
2. Differential voltages are the non-inverting input terminal with respect to the inverting input terminal.
3. The magnitude of the input and the output voltages must never exceed the magnitude of the positive supply voltage.
OPERATING CONDITIONS
Symbol
VCC
+
Vicm
2/15
Parameter
Supply Voltage
Common Mode Input Voltage Range
Value
3 to 16
+
0 to VCC - 1.5
Unit
V
V
Set Current
T26
Offset Null 1
T29
T3
Input -
T28
T27
T1
V CC
T4
Offset Null 2
T2
T5
C1
Input +
R1
T7
T6
T9
T11
V CC
T13
T8
T12
T10
T14
C2
T16
Output
T15
TS271C,I,M
SCHEMATIC DIAGRAM
3/15
TS271C,I,M
OFFSET VOLTAGE NULL CIRCUIT
RESISTOR BIASING
VCC
VCC
5
1
8
25kΩ
VO
VCC
VO
R set
R set
R set
VCC
R SET CONNECTED TO
GROUND
OFFSET COMPENSATION GUARANTEED FOR
TS271BCX (ISET > 25µA),TS271ACX (ISET> 90µA)
Figure 1 :
VCC
RSET CONNECTED TO
VCC- (R SET VALUE : SEE
Fig.1)
RSET Connected to VCC-.
V
V
R
CC
CC
= +3V
V
= +5V
V
CC
= +10V
= +16V
CC
set
10M
Ω
1M Ω
100k
10k
4/15
Ω
Ω
0. 1µA
1 µA
1 0µ A
1 0 0µA
I set
TS271C,I,M
ELECTRICAL CHARACTERISTICS FOR ISET = 1.5µA
VCC+ = +10V, VCC- = 0V, Tamb = 25oC (unless otherwise specified)
Symbol
Parameter
Min.
Vio
Input Offset Voltage
VO = 1.4V, V ic = 0V TS271C/I/M
TS271AC/AI/AM
TS271BC/BI/BM
Typ.
Max.
1.1
0.9
0.25
10
5
2
Iio
Iib
VOH
Io
Isink
SR
∅m
Kov
1
Input Bias Current - (note 1)
Vic = 5V, Vo = 5V
Tmin. ≤ Tamb ≤ Tmax.
1
High Level Output Voltage
Vid = 100mV, R L = 1MΩ
Tmin. ≤ Tamb ≤ Tmax.
100
200
pA
1
150
300
V
8.8
8.7
9
8.8
8.6
9
50
50
mV
V/mV
30
20
100
30
20
100
MHz
0.1
0.1
Common Mode Rejection Ratio
Vo = 1.4V, Vic = 1V to 7.4V
60
80
60
80
Supply Voltage Rejection Ratio
+
VCC = 5V to 10V ,Vo = 1.4V
60
80
60
80
dB
dB
Supply Current
Av = 1, no load, Vo = 5V
Tmin. ≤ Tamb ≤ Tmax.
10
Output Short Circuit Current
Vid = 100mV, Vo = 0V
60
60
Output Sink Current
Vid = -100mV, Vo = VCC
45
45
0.04
0.04
Phase Margin at Unity Gain
Av = 40dB, RL = 1MΩ
C L= 10pF
C L= 100pF
µV/oC
pA
Gain Bandwidth Product (Av = 40dB,
RL = 1MΩ, CL = 100pF, fin = 10kHz)
Slew-Rate at Unity Gain
R L = 1MΩ, CL= 100pF, Vi = 3 to 7V
Unit
12
6.5
3.5
1
15
17
10
15
18
µA
mA
mA
V/µs
Degrees
35
10
35
10
40
70
40
70
68
68
Overshoot Factor
%
C L = 10pF
C L = 100pF
en
10
5
2
Input Offset Current - (note 1)
Vic = 5V, Vo = 5V
Tmin. ≤ Tamb ≤ Tmax.
Large Signal Voltage Gain
Vo = 1V to 6V, R L = 1MΩ, Vic = 5V
Tmin. ≤ Tamb ≤ Tmax.
ICC
1.1
0.9
0.25
0.7
Avd
SVR
Max.
0.7
Low Level Output Voltage (Vid = -100mV)
CMR
Typ.
12
6.5
3
Input Offset Voltage Drift
VOL
GBP
Min.
mV
Tmin. ≤ Tamb ≤ Tmax. TS271C/I/M
TS271AC/AI/AM
TS271BC/BI/BM
DVio
TS271I/AI/BI
TS271M/AM/BM
TS271C/AC/BC
Equivalent Input Noise Voltage
f = 1kHz, RS = 100Ω
nV
√

Hz
Note : 1. Maximum values including unavoidable inaccuracies of the industrial test.
5/15
TS271C,I,M
TYPICAL CHARACTERISTICS FOR ISET = 1.5µA
Supply Current versus Supply
Voltage
Figure 3 :
INPUT BIASCURRENT, I IB (pA)
SUPPLY CURRENT, ICC (µA)
Figure 2 :
20
15
Tamb = 25°C
AV = 1
VO = V CC / 2
10
5
0
T amb = 25°C
V id = 100mV
VCC = 5V
3
2
VCC = 3V
1
0
-10
-8
-6
-4
-2
OUTPUT CURRENT, I OH (mA)
6/15
1
V CC = 3V
0.8
V CC = 5V
0.6
0.4
T amb = 25°C
V ic = 0.5V
V id = -100mV
1
2
OUTPUT CURRENT, I OL (mA)
3
50
75
100
TEMPERATURE, T amb (°C)
125
Figure 4b : High Level Output Voltage versus
High Level Output Current
20
16
T amb = 25°C
V id = 100mV
VCC = 16V
12
VCC = 10V
8
4
0
-50
-40
-30
-20
-10
OUTPUT CURRENT, I OH (mA)
0
Figure 5b : Low Level Output Voltage versus
Low Level Output Current
OUTPUT VOLTAGE,V OL (V)
OUTPUT VOLTAGE,V OL (V)
1.0
0
10
0
Figure 5a : Low Level Output Voltage versus
Low Level Output Current
0.2
VCC = 10V
Vic = 5V
25
OUTPUT VOLTAGE, V OH (V)
OUTPUT VOLTAGE, V OH (V)
5
4
100
4
8
12
16
SUPPLY VOLTAGE, VCC (V)
Figure 4a : High Level Output Voltage versus
High Level Output Current
Input Bias Current versus Free Air
Temperature
3
V CC = 10V
2
1
0
VCC = 16V
T amb = 25°C
Vic = 0.5V
Vid = -100mV
4
8
12
16
OUTPUT CURRENT, I OL (mA)
20
TS271C,I,M
TYPICAL CHARACTERISTICS FOR ISET = 1.5µA (continued)
Open Loop Frequency Response
and Phase Shift
Figure 7 :
50
0
PHASE
Tamb = 25°C
VCC+ = 10V
R L = 1MΩ
C L = 100pF
A VCL = 100
-10 2
10
PHASE MARGIN, φ m (Degrees)
Figure 8 :
90
Phase
Margin
135
Gain
Bandwidth
Product
3
4
180
5
10
10
10
FREQUENCY, f (Hz)
10
6
Phase Margin versus Supply Voltage
10
8
6
4
2
0
Tamb = 25°C
R L = 1MΩ
C L = 100pF
AV = 1
4
8
12
SUPPLY VOLTAGE, VCC (V)
Gain Bandwidth Product versus
Supply voltage
120
Tamb = 25°C
R L = 1MΩ
C L = 100pF
AV = 1
100
80
60
40
0
4
8
12
SUPPLY VOLTAGE, V CC (V)
Figure 9 :
PHASE MARGIN, φ m (Degrees)
10
45
PHASE(Degrees)
GAIN
30
20
0
16
16
Phase Margin versus Capacitive
Load
40
Tamb = 25°C
R L= 1M Ω
AV = 1
VCC = 10V
30
20
10
0
20
40
60
80
CAPACITANCE, C L (pF)
100
Figure 10 : Slew Rates versus Supply Voltage
0.07
SLEW RATES,SR (V/ µs)
GAIN (dB)
40
GAIN BANDW.PROD., GBP (kHz)
Figure 6 :
T amb = 25°C
R L = 1MΩ
C L = 100pF
0.06
0.05
0.04
SR
SR
0.03
0.02
0.01
4
6
8
10
12
14
SUPPLY VOLTAGE, VCC (V)
16
7/15
TS271C,I,M
ELECTRICAL CHARACTERISTICS FOR ISET = 25µA
VCC+ = +10V, VCC- = 0V, Tamb = 25oC (unless otherwise specified)
Symbol
Parameter
Min.
Vio
Input Offset Voltage
VO = 1.4V, V ic = 0V TS271C/I/M
TS271AC/AI/AM
TS271BC/BI/BM
Typ.
Max.
1.1
0.9
0.25
10
5
2
Iio
Iib
VOH
Io
Isink
SR
∅m
Kov
12
6.5
3
1
Input Bias Current - (note 1)
Vic = 5V, Vo = 5V
Tmin. ≤ Tamb ≤ Tmax.
1
High Level Output Voltage
Vid = 100mV, R L = 100kΩ
Tmin. ≤ Tamb ≤ Tmax.
100
200
pA
1
150
300
V
8.7
8.6
8.9
8.7
8.5
8.9
50
50
mV
V/mV
30
20
50
30
10
50
MHz
0.7
0.7
Common Mode Rejection Ratio
Vo = 1.4V, Vic = 1V to 7.4V
60
80
60
80
Supply Voltage Rejection Ratio
+
VCC = 5V to 10V ,Vo = 1.4V
60
80
60
80
dB
dB
Supply Current
Av = 1, no load, Vo = 5V
Tmin. ≤ Tamb ≤ Tmax.
150
Output Short Circuit Current
Vid = 100mV, Vo = 0V
60
60
Output Sink Current
Vid = -100mV, Vo = VCC
45
45
Slew-Rate at Unity Gain
R L = 100kΩ, CL= 100pF, Vi = 3 to 7V
0.6
200
250
150
200
300
µA
mA
mA
V/µs
0.6
degrees
50
30
50
30
30
50
30
50
38
38
Overshoot Factor
%
Equivalent Input Noise Voltage
f = 1kHz, RS = 100Ω
Note : 1. Maximum values including unavoidable inaccuracies of the industrial test.
8/15
µV/oC
pA
Gain Bandwidth Product (Av = 40dB,
RL = 100kΩ, CL = 100pF, fin = 100kHz)
Phase Margin at Unity Gain
Av = 40dB, RL = 100kΩ
C L = 10pF
C L= 100pF
Unit
12
6.5
3.5
1
C L = 10pF
C L = 100pF
en
10
5
2
Input Offset Current - (note 1)
Vic = 5V, Vo = 5V
Tmin. ≤ Tamb ≤ Tmax.
Large Signal Voltage Gain
Vo = 1V to 6V, R L = 100kΩ, Vic = 5V
Tmin. ≤ Tamb ≤ Tmax.
ICC
1.1
0.9
0.25
2
Avd
SVR
Max.
2
Low Level Output Voltage (Vid = -100mV)
CMR
Typ.
Input Offset Voltage Drift
VOL
GBP
Min.
mV
Tmin. ≤ Tamb ≤ Tmax. TS271C/I/M
TS271AC/AI/AM
TS271BC/BI/BM
DVio
TS271I/AI/BI
TS271M/AM/BM
TS271C/AC/BC
nV
√

Hz
TS271C,I,M
TYPICAL CHARACTERISTICS FOR ISET = 25µA
Figure 12 : Input Bias Current versus Free Air
Temperature
INPUT BIASCURRENT, I IB (pA)
SUPPLYCURRENT, I CC ( µA)
Figure 11 : Supply Current versus Supply
Voltage
200
150
100
Tamb = 25°C
AV = 1
VO = VCC / 2
50
0
4
8
12
100
VCC = 10V
Vic = 5V
10
1
16
25
50
75
100
TEMPERATURE, T amb (°C)
SUPPLY VOLTAGE, VCC (V)
5
T amb = 25°C
V id = 100mV
4
VCC = 5V
3
2
VCC = 3V
1
0
-10
-8
-6
-4
-2
OUTPUT CURRENT, I OH (mA)
V CC = 3V
0.8
V CC = 5V
0.4
0
T amb = 25°C
V ic = 0.5V
V id = -100mV
1
2
OUTPUT CURRENT, I OL (mA)
16
3
T amb = 25°C
V id = 100mV
VCC = 16V
12
VCC = 10V
8
4
0
-50
-40
-30
-20
-10
OUTPUT CURRENT, I OH (mA)
0
Figure 14b : Low Level Output Voltage versus
Low Level Output Current
OUTPUT VOLTAGE,V OL (V)
OUTPUT VOLTAGE,V OL (V)
1.0
0.2
20
0
Figure 14a : Low Level Output Voltage versus
Low Level Output Current
0.6
Figure 13b : High Level Output Voltage versus
High Level Output Current
OUTPUT VOLTAGE, V OH (V)
OUTPUT VOLTAGE, V OH (V)
Figure 13a : High Level Output Voltage versus
High Level Output Current
125
3
V CC = 10V
2
1
0
VCC = 16V
T amb = 25°C
Vic = 0.5V
Vid = -100mV
4
8
12
16
OUTPUT CURRENT, I OL (mA)
20
9/15
TS271C,I,M
TYPICAL CHARACTERISTICS FOR ISET = 25µA (continued)
Figure 16 : Gain Bandwidth Product versus
Supply voltage
50
0
GAIN
PHASE
30
20
45
Phase
Margin
Tamb = 25°C
VCC+ = 10V
R L = 100k Ω
C L = 100pF
A VCL = 100
10
0
-10
2
10
10
3
90
135
Gain
Bandwidth
Product
180
4
5
6
10
10
10
FREQUENCY, f (Hz)
10
PHASE(Degrees)
GAIN (dB)
40
7
40
30
0
Tamb = 25°C
R L = 100k Ω
C L = 100pF
AV = 1
4
8
12
SUPPLY VOLTAGE, VCC (V)
Tamb = 25°C
R L = 100kΩ
C L = 100pF
AV = 1
0.8
0.7
0.6
0.5
0.4
4
8
12
16
SUPPLY VOLTAGE, V CC (V)
Figure 18 : Phase Margin versus Capacitive
Load
PHASE MARGIN, φ m (Degrees)
PHASE MARGIN, φ m (Degrees)
50
10
0.8
0
Figure 17 : Phase Margin versus Supply Voltage
20
GAIN BANDW. PROD., GBP (kHz)
Figure 15 : Open Loop Frequency Response
and Phase Shift
16
50
Tamb = 25°C
R L = 100k Ω
AV = 1
VCC = 10V
40
30
20
0
20
40
60
80
CAPACITANCE, C L (pF)
Figure 19 : Slew Rates versus Supply Voltage
SLEW RATES, SR (V/µ s)
1.0
SR
0.8
SR
0.6
0.4
0.2
0
10/15
T amb = 25°C
R L = 100kΩ
C L = 100pF
4
6
8
10 12
14
SUPPLY VOLTAGE, V CC (V)
16
100
TS271C,I,M
ELECTRICAL CHARACTERISTICS FOR ISET = 130µA
VCC+ = +10V, VCC- = 0V, Tamb = 25oC (unless otherwise specified)
Symbol
Parameter
Min.
Vio
Input Offset Voltage
VO = 1.4V, V ic = 0V TS271C/I/M
TS271AC/AI/AM
TS271BC/BI/BM
Typ.
Max.
1.1
0.9
0.25
10
5
2
Iio
Iib
VOH
Io
Isink
SR
∅m
Kov
12
6.5
3
1
Input Bias Current - (note 1)
Vic = 5V, Vo = 5V
Tmin. ≤ Tamb ≤ Tmax.
1
High Level Output Voltage
Vid = 100mV, R L = 10kΩ
Tmin. ≤ Tamb ≤ Tmax.
µV/oC
pA
100
200
pA
1
150
300
V
8.2
8.1
8.4
8.2
8
8.4
50
50
mV
V/mV
10
7
Gain Bandwidth Product (Av = 40dB,
RL = 10kΩ, CL = 100pF, f in = 100kHz)
15
10
6
15
MHz
2.3
2.3
Common Mode Rejection Ratio
Vo = 1.4V, Vic = 1V to 7.4V
60
80
60
80
Supply Voltage Rejection Ratio
+
VCC = 5V to 10V ,Vo = 1.4V
60
70
60
70
dB
dB
Supply Current
Av = 1, no load, Vo = 5V
Tmin. ≤ Tamb ≤ Tmax.
800
Output Short Circuit Current
Vid = 100mV, Vo = 0V
60
60
Output Sink Current
Vid = -100mV, Vo = VCC
45
45
Slew-Rate at Unity Gain
R L = 10kΩ, CL= 100pF, V i = 3 to 7V
4.5
4.5
Phase Margin at Unity Gain
Av = 40dB, RL = 10kΩ
C L= 10pF
C L= 100pF
Unit
12
6.5
3.5
1
1300
1400
800
1300
1500
µA
mA
mA
V/µs
degrees
65
50
65
50
30
30
30
30
30
30
Overshoot Factor
%
C L = 10pF
C L = 100pF
en
10
5
2
Input Offset Current - (note 1)
Vic = 5V, Vo = 5V
Tmin. ≤ Tamb ≤ Tmax.
Large Signal Voltage Gain
Vo = 1V to 6V, R L = 10kΩ, Vic = 5V
Tmin. ≤ Tamb ≤ Tmax.
ICC
1.1
0.9
0.25
2
Avd
SVR
Max.
2
Low Level Output Voltage (Vid = -100mV)
CMR
Typ.
Input Offset Voltage Drift
VOL
GBP
Min.
mV
Tmin. ≤ Tamb ≤ Tmax. TS271C/I/M
TS271AC/AI/AM
TS271BC/BI/BM
DVio
TS271I/AI/BI
TS271M/AM/BM
TS271C/AC/BC
Equivalent Input Noise Voltage
f = 1kHz, RS = 100Ω
nV
√

Hz
Note : 1. Maximum values including unavoidable inaccuracies of the industrial test.
11/15
TS271C,I,M
TYPICAL CHARACTERISTICS FOR ISET = 130µA
1.0
0.8
0.6
0.4
T amb = 25°C
AV = 1
VO = V CC / 2
0.2
0
4
8
12
SUPPLY VOLTAGE, V CC (V)
T amb = 25°C
V id = 100mV
VCC = 5V
2
VCC = 3V
1
0
-10
-8
-6
-4
-2
OUTPUT CURRENT, I OH (mA)
V CC = 3V
0.8
12/15
V CC = 5V
0.4
0
T amb = 25°C
V ic = 0.5V
V id = -100mV
1
2
OUTPUT CURRENT, I OL (mA)
1
3
50
75
100
TEMPERATURE, T amb (°C)
125
Figure 22b : High Level Output Voltage versus
High Level Output Current
20
16
T amb = 25°C
V id = 100mV
VCC = 16V
12
VCC = 10V
8
4
0
-50
-40
-30
-20
-10
OUTPUT CURRENT, I OH (mA)
0
Figure 23b : Low Level Output Voltage versus
Low Level Output Current
OUTPUT VOLTAGE,V OL (V)
OUTPUT VOLTAGE,V OL (V)
1.0
0.2
10
0
Figure 23a : Low Level Output Voltage versus
Low Level Output Current
0.6
VCC = 10V
Vic = 5V
25
OUTPUT VOLTAGE, V OH (V)
OUTPUT VOLTAGE, V OH (V)
5
3
100
16
Figure 22a : High Level Output Voltage versus
High Level Output Current
4
Figure 21 : Input Bias Current versus Free Air
Temperature
INPUT BIASCURRENT, I IB (pA)
SUPPLYCURRENT, I CC (mA)
Figure 20 : Supply Current (each amplifier) versus Supply Voltage
3
V CC = 10V
2
1
0
VCC = 16V
T amb = 25°C
Vic = 0.5V
Vid = -100mV
4
8
12
16
OUTPUT CURRENT, I OL (mA)
20
TS271C,I,M
TYPICAL CHARACTERISTICS FOR ISET = 130µA (continued)
50
0
GAIN
30
45
PHASE
20
Phase
Margin
Tamb = 25°C
VCC+ = 10V
R L = 10k Ω
C L = 100pF
A VCL = 100
10
0
-10
2
10
10
3
90
135
Gain
Bandwidth
Product
4
5
180
6
10
10
10
FREQUENCY, f (Hz)
10
PHASE(Degrees)
GAIN (dB)
40
7
30
0
Tamb = 25°C
R L = 10k Ω
C L = 100pF
AV = 1
4
8
12
SUPPLY VOLTAGE, VCC (V)
4
3
Tamb = 25°C
R L = 10kΩ
C L = 100pF
AV = 1
2
1
4
8
12
SUPPLY VOLTAGE, V CC (V)
16
Figure 27 : Phase Margin versus Capacitive Load
PHASEMARGIN, φ m (Degrees)
40
16
70
Tamb = 25°C
R L= 10k Ω
AV = 1
VCC = 10V
60
50
40
30
0
20
40
60
80
CAPACITANCE, C L (pF)
100
Figure 28 : Slew Rates versus Supply Voltage
5
SLEW RATES, SR (V/ µs)
PHASE MARGIN, φ m (Degrees)
50
10
5
0
Figure 26 : Phase Margin versus Supply Voltage
20
Figure 25 : Gain Bandwidth Product versus
Supply voltage
GAIN BANDW. PROD., GBP (kHz)
Figure 24 : Open Loop Frequency Response and
Phase Shift
SR
4
SR
3
2
T amb = 25°C
R L = 10kΩ
C L = 100pF
1
0
4
6
8
10 12
14
SUPPLY VOLTAGE, V CC (V)
16
13/15
TS271C,I,M
PM-DIP8.EPS
PACKAGE MECHANICAL DATA
8 PINS - PLASTIC DIP
A
a1
B
b
b1
D
E
e
e3
e4
F
i
L
Z
14/15
Min.
Millimeters
Typ.
3.32
0.51
1.15
0.356
0.204
Max.
1.65
0.55
0.304
10.92
9.75
7.95
Min.
0.020
0.045
0.014
0.008
Max.
0.065
0.022
0.012
0.430
0.384
0.313
2.54
7.62
7.62
3.18
Inches
Typ.
0.131
0.100
0.300
0.300
6.6
5.08
3.81
1.52
0.125
0260
0.200
0.150
0.060
271-07.TBL
Dimensions
TS271C,I,M
PM-SO8.EPS
PACKAGE MECHANICAL DATA
8 PINS - PLASTIC MICROPACKAGE (SO)
A
a1
a2
a3
b
b1
C
c1
D
E
e
e3
F
L
M
S
Min.
Millimeters
Typ.
0.1
0.65
0.35
0.19
0.25
Max.
1.75
0.25
1.65
0.85
0.48
0.25
0.5
Min.
Inches
Typ.
0.026
0.014
0.007
0.010
Max.
0.069
0.010
0.065
0.033
0.019
0.010
0.020
0.189
0.228
0.197
0.244
0.004
o
45 (typ.)
4.8
5.8
5.0
6.2
1.27
3.81
3.8
0.4
0.050
0.150
4.0
1.27
0.6
0.150
0.016
0.157
0.050
0.024
SO8.TBL
Dimensions
o
8 (max.)
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility
for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics.
Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life
support devices or systems without express written approval of SGS-THOMSON Microelectronics.
ORDER CODE :
 1997 SGS-THOMSON Microelectronics – Printed in Italy – All Rights Reserved
SGS-THOM SON Microelectronics GROUP OF COMPANIES
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15/15