Preliminary TSC5304D High Voltage NPN Transistor with Diode Pin assignment: 1. Base 2. Collector 3. Emitter BVCEO = 400V BVCBO = 750V Ic = 4A VCE (SAT), = 1.2V @ Ic / Ib = 4A / 1A Features Ordering Information Built-in free-wheeling diode makes efficient anti Part No. Packing Package saturation operation. TSC5304DCH Tube TO-251 No need to interest an hfe value because of low variable TSC5304DCP T&R TO-252 storage-time spread even though comer spirit product. Block Diagram Low base drive requirement. Suitable for half bridge light ballast applications. Structure Silicon triple diffused type. NPN silicon transistor with Diode Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Symbol Limit Unit Collector-Base Voltage VCBO 750V V Collector-Emitter Voltage VCEO 400V V Emitter-Base Voltage VEBO 10 V IC 4 A Collector Current DC Pulse Base Current DC 8 IB Pulse 1.5 A 4 o Total Power Dissipation (Tc=25 C) PD 35 Operating Junction Temperature TJ +150 o C Operating Junction and Storage Temperature Range TSTG - 65 to +150 o C Thermal Resistance Junction to Case RΘjc 6 o C/W 90 o C/W Thermal Resistance Junction to Ambient Note: 1. Single pulse, Pw = 300uS, Duty <= 2% TS5304D Preliminary RΘja 1-1 2004/09 rev. A W Preliminary Electrical Characteristics Parameter Conditions Symbol Min Typ Max Unit Static Collector-Base Voltage IC = 1mA, IB = 0 BVCBO 750 -- -- V Collector-Emitter Breakdown Voltage IC = 5mA, IE = 0 BVCEO 400 -- -- V Emitter-Base Breakdown Voltage IE = 1mA, IC = 0 BVEBO 9 -- -- V Collector Cutoff Current VCB = 500V, IE = 0 ICBO -- -- 10 uA Emitter Cutoff Current VEB = 9V, IC = 0 IEBO -- -- 10 uA Collector-Emitter Saturation Voltage IC / IB = 1.0A / 0.2A VCE(SAT)1 -- -- 0.35 V IC / IB = 2.0A / 0.5A VCE(SAT)2 -- -- 0.55 IC / IB = 4.0A / 1.0A VCE(SAT)3 -- -- 1.25 IC / IB = 1.0A / 0.2A VCB(SAT)1 -- -- 1.0 IC / IB = 2.0A / 0.5A VCB(SAT)2 -- -- 1.1 VCE = 5V, IC = 0.5A hFE 1 15 20 -- VCE = 5V, IC = 2A hFE 2 10 -- -- Base-Emitter Saturation Voltage DC Current Gain V Turn On Time VCC = 250V, IC = 2A, tON -- -- 0.5 uS Storage Time IB1 = IB2 = 0.4A, tp= 25uS tSTG -- -- 3 uS Fall Time Duty cycle < 1% tF -- -- 0.2 uS Fall Time IC = 2A tF -- -- 500 nS Forward Voltage IC = 2A Vf -- -- 1.3 V Doide Note : pulse test: pulse width <=300uS, duty cycle <=2% TS5304D Preliminary 2-2 2004/09 rev. A Preliminary TO-252 Mechanical Drawing E J A A B C D E F G TO-252 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 6.570 6.840 0.259 0.269 9.250 10.400 0.364 0.409 0.550 0.700 0.022 0.028 2.560 2.670 0.101 0.105 2.300 2.390 0.090 0.094 0.490 0.570 0.019 0.022 1.460 1.580 0.057 0.062 H I J 0.520 5.340 1.460 F DIM I B G D C H 0.570 5.550 1.640 0.020 0.210 0.057 0.022 0.219 0.065 TO-251 Mechanical Drawing DIM TS5304D Preliminary 3-3 TO-251 DIMENSION MILLIMETERS INCHES A A1 b C MIN 2.20 1.10 0.40 0.40 MAX 2.4 1.30 0.80 0.60 MIN 0.087 0.043 0.016 0.016 MAX 0.095 0.051 0.032 0.024 D D1 E e F L L1 6.70 5.40 6.40 2.10 0.40 7.00 1.60 7.30 5.65 6.65 2.50 0.60 8.00 1.86 0.264 0.213 0.252 0.083 0.016 0.276 0.063 0.287 0.222 0.262 0.098 0.024 0.315 0.073 2004/09 rev. A