TSML3700 Vishay Telefunken GaAs/GaAlAs Infrared Emitting Diode in SMT Package Description TSML3700 is an infrared emitting diode in GaAlAs on GaAs technology in a miniature PL–CC–2 SMD package. It has been designed to meet the increasing demand on optoelectronic devices for surface mounting. The package consists of a lead frame which is surrounded with a white thermoplast. The reflector inside the package is filled up with clear epoxy. This new package achieves an improvement of 100% in radiant intensity, compared with the old SOT–23 package. 94 8553 Features D D D D D SMT IRED with extra high radiant power D D D D D D Available in 8 mm tape Low forward voltage Compatible with automatic placement equipment EIA and ICE standard package Suitable for infrared, vapor phase and wavesolder process Suitable for pulse current operation Extra wide angle of half intensity ϕ = ± 60° Peak wavelength lp = 925 nm High reliability Matching to TEMT3700 phototransistor Applications Infrared source in tactile keyboards IR diode in low space applications Matching with phototransistor TEMT3700 in reflective sensors High performance PCB mounted infrared sensors High power infrared emitter for miniature light barriers Document Number 81034 Rev. 3, 20-May-99 www.vishay.de • FaxBack +1-408-970-5600 1 (6) TSML3700 Vishay Telefunken Absolute Maximum Ratings Tamb = 25_C Parameter Reverse Voltage Forward Current Peak Forward Current Surge Forward Current Power Dissipation Junction Temperature Operating Temperature Range Storage Temperature Range Soldering Temperature Thermal Resistance Junction/Ambient Test Conditions Symbol VR IF IFM IFSM PV Tj Tamb Tstg Tsd RthJA tp/T = 0.5, tp = 100 ms tp = 100 ms t x10sec Value 5 100 200 1 170 100 –55...+100 –55...+100 260 450 Unit V mA mA A mW °C °C °C °C K/W Basic Characteristics Tamb = 25_C Parameter Forward Voltage g Temp. Coefficient of VF Reverse Current Junction Capacitance Radiant Intensity y Radiant Power Temp. Coefficient of fe Angle of Half Intensity Peak Wavelength Spectral Bandwidth Temp. Coefficient of lp Rise Time Fall Time Test Conditions IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 ms IF = 100mA VR = 5 V VR = 0 V, f = 1 MHz, E = 0 IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 ms IF = 100 mA, tp = 20 ms IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA IF = 20 mA IF = 1 A IF = 20 mA IF = 1 A www.vishay.de • FaxBack +1-408-970-5600 2 (6) Symbol VF VF TKVF IR Cj Ie Ie fe TKfe ϕ lp Dl TKlp tr tr tf tf Min Typ 1.3 2.2 –1.3 Max 1.7 100 2.5 20 7 60 32 –0.8 ±60 925 50 0.2 800 500 800 500 Unit V V mV/K mA pF mW/sr mW/sr mW %/K deg nm nm nm/K ns ns ns ns Document Number 81034 Rev. 3, 20-May-99 TSML3700 Vishay Telefunken Typical Characteristics (Tamb = 25_C unless otherwise specified) 104 IF – Forward Current ( mA ) PV – Power Dissipation ( mW ) 250 200 150 RthJA 100 50 103 102 tp = 100 ms tp / T = 0.001 101 100 0 0 20 40 60 80 100 Tamb – Ambient Temperature ( °C ) 94 8029 e 0 Figure 1. Power Dissipation vs. Ambient Temperature V Frel – Relative Forward Voltage IF – Forward Current ( mA ) 75 RthJA 50 25 0 1.1 IF = 10 mA 1.0 0.9 0.8 0.7 0 20 40 60 80 100 Tamb – Ambient Temperature ( °C ) 94 7916 e 0 Tamb tp/T=0.005 1000 v60°C 0.01 0.05 0.2 0.5 DC 1 0.01 60 80 100 100 0.02 10 40 Figure 5. Relative Forward Voltage vs. Ambient Temperature I e – Radiant Intensity ( mW/sr ) 10000 20 Tamb – Ambient Temperature ( °C ) 94 7990 e Figure 2. Forward Current vs. Ambient Temperature IF – Forward Current ( mA ) 4 3 1.2 100 95 9985 2 Figure 4. Forward Current vs. Forward Voltage 125 100 1 VF – Forward Voltage ( V ) 94 7952 e 0.1 10 1 0.1 0.1 1 10 100 tp – Pulse Length ( ms ) Figure 3. Pulse Forward Current vs. Pulse Duration Document Number 81034 Rev. 3, 20-May-99 100 15903 101 102 103 IF – Forward Current ( mA ) 104 Figure 6. Radiant Intensity vs. Forward Current www.vishay.de • FaxBack +1-408-970-5600 3 (6) TSML3700 Vishay Telefunken 1.25 Fe rel – Relative Radiant Power Fe – Radiant Power ( mW ) 1000 100 10 1 1.0 0.75 0.5 0.25 IF = 100 mA 0 875 0.1 100 101 102 103 IF – Forward Current ( mA ) 94 8740 104 Figure 7. Radiant Power vs. Forward Current Figure 9. Relative Radiant Power vs. Wavelength 0° I e rel – Relative Radiant Intensity 1.6 I e rel ; Fe rel 1.2 IF = 20 mA 0.8 0.4 975 925 l – Wavelength ( nm ) 12757 10 ° 20 ° 30° 40° 1.0 0.9 50° 0.8 60° 70° 0.7 80° 0 –10 0 10 94 7993 e 50 100 140 Tamb – Ambient Temperature ( °C ) Figure 8. Rel. Radiant Intensity\Power vs. Ambient Temperature www.vishay.de • FaxBack +1-408-970-5600 4 (6) 0.6 0.4 0.2 0 0.2 0.4 0.6 94 8013 e Figure 10. Relative Radiant Intensity vs. Angular Displacement Document Number 81034 Rev. 3, 20-May-99 TSML3700 Vishay Telefunken Dimensions in mm 95 11314 Document Number 81034 Rev. 3, 20-May-99 www.vishay.de • FaxBack +1-408-970-5600 5 (6) TSML3700 Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 www.vishay.de • FaxBack +1-408-970-5600 6 (6) Document Number 81034 Rev. 3, 20-May-99