MICROSEMI UM9441_06

UM9441
PIN RADIATION DETECTORS
KEY FEATURES
DESCRIPTION
temperature so long as applied voltage
exceeds the saturation voltage. This
structure also minimizes the effects of
permanent damage caused by neutrons and
other high energy radiation. Experiments on
devices of the UM9441 design show no
degradation in gamma sensitivity resulting
from a total dose of 1014 neutrons/cm2 of
1 MeV equivalent.
Package
The UM9441 is an axially leaded device
constructed by metallurgically bonding the
PIN chip in between two molybdenum
refractory pins that are typically 0.125
inches in diameter and 0.050 inches long.
Hyper-pure glass is then fused over this
bond to form a void less seal. Leads are then
brazed to ends of molybdenum pins. This
results in a high-reliability package using
materials so well thermally matched that the
UM9441 can withstand temperature shock
or cycling from -196 oC to +300 oC.
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Description
Silicon PIN devices are effective
detectors of nuclear and
electromagnetic radiation. This includes
gamma radiation, electrons, and X-rays.
The detectors can be used across the
temperature range of -55 oC to +175 oC
instead of being restricted to use at low
temperatures.
The absorbed radiation produces
electron-hole pairs in the space charge
region. These charges are swept out by
the applied field and result in a current
flow proportional to the rate of
absorbed radiation.
The Microsemi UM9441 series
utilizes high resistivity material and is
designed to have a uniform area mesa
structure to define the active volume.
The current sensitivity of this device is
proportional only to the I-region
volume and is independent of
ƒ High Photocurrent Sensitivity
ƒ High Reliability Construction
ƒ Fast Rise Time
ƒ Wide Dynamic Range
ƒ Hardness to Neutron
Bombardment
ƒ Low operating Voltage
APPLICATIONS/BENEFITS
ƒ Surface Mount package available
ƒ RoHS compliant devices
available
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
ABSOLUTE MAXIMUM RATINGS AT 25º C
(UNLESS OTHERWISE SPECIFIED)
Rating
Symbol
Reverse Voltage
VR
Photocurrent
Value
Unit
100
V
3Adc
3A s pulsed
2
Storage Temperature
T stg
-55 to +200
ºC
Operating Temperature
T op
-55 to +175
ºC
UM9441
Copyright  2006
Rev. 0, 2006-03-14
Microsemi
Page 1
UM9441
PIN RADIATION DETECTORS
Conditions
VR = 50 V
6
10 rads(Si)/sec
2.5 MeV Flash X-Ray
Ion Physics Corporation
FX-25
F = 1 MHz, V = 50 V
VR = 50 V
IF = 10 mA
Photocurrent
Capacitance
Reverse Current
Minority Carrier Lifetime
Min
Typ.
4.0
6.0
Max
Units
mA
10
1.0
2.0
PHOTOCURRENT SENSITIVITY
TYPICAL
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Parameter
pF
µA
µs
VOLTAGE SENSITIVITY
TYPICAL
103
10
RADIATION SOURCE - AS NOTED
7
PHOTOCURRENT (mA)
PHOTOCURRENT (mA)
8
FLASH X-RAY
PIN REVERSE VOLTAGE 50 V
102
LINAC
101
FX-25
6
5
4
LINAC
3
2
ABSORBED DOSE RATE - 1E6 [rads(Si)/sec]
RADIATION SOURCE - AS NOTED
100
105
1
106
107
108
0
25
50
75
100
PIN REVERSE VOLTAGE (V)
ABSORBED DOSE RATE [rads(Si)/sec]
ELECTRICAL
Copyright  2006
Rev. 0, 2006-03-14
Microsemi
Page 2
UM9441
PIN RADIATION DETECTORS
APOLLO
DRAGON
HAWK
MARINER
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Reliability
The UM9441 is consistent with Microsemi’s
reputation as a manufacturer of high reliability
semiconductors. Microsemi is equipped to
perform JAN type testing, base-lining and
documental conformance to a wide range of
reliability testing. This commitment to reliability
has enabled Microsemi to be a qualified supplier
of semiconductor devices to many high-reliability
programs such as:
MINUTEMAN
SPRINT
TRIDENT
VIKING
ELECTRICALS
Copyright  2006
Rev. 0, 2006-03-14
Microsemi
Page 3
UM9441
PIN RADIATION DETECTORS
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NOTES:
NOTES
Copyright  2006
Rev. 0, 2006-03-14
Microsemi
Page 4