ROHM UMZ8.2N

UMZ8.2N
Diodes
Zener diode
UMZ8.2N
zApplications
Constant voltage control
Noise suppression on signal line
zExternal dimensions (Units : mm)
2.0±0.2
0.9±0.1
1.3±0.1
0.3 0.6
0.65 0.65
zFeatures
1) Small surface mounting type. (UMD3)
2) Multiple diodes with common anode configuration.
3) High reliability.
2.1±0.1
1.25±0.1
0.1Min.
0~0.1
0.15±0.05
6A
0.3±0.1
(All leads have the same dimensions)
ROHM : UMD3
EIAJ : SC-70
JEDEC : SOT-323
zConstruction
Silicon epitaxial planar
zCircuit
zAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Limits
Unit
Power dissipation
P
200
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
∗
−55~+150
°C
∗ Total of 2 elements
zElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Min.
Max.
Unit
VZ
7.76
8.64
V
IZ=5mA
Reverse current
IR
−
0.50
µA
VR=5V
Operating resistance
ZZ
−
30
Ω
IZ=5mA
Rising operating resistance
ZZK
−
60
Ω
IZ=0.5mA
Zener voltage
Conditions
UMZ8.2N
Diodes
zElectrical characteristic curves (Ta = 25°C)
0.01
0
8.0
9.0
10.0
ZENER VOLTAGE : VZ (V)
POWER DISSIPATION : Pd (mW)
300
200
100
25
50
100
Fig.4 Derating curve
1
0.1
1
10
ZENER CURRENT : IZ (mA)
Fig.1 Zener voltage characteristics
AMBIENT TEMPERATURE : Ta (°C)
10
150
Fig.2 Operating resistance
Zener current characteristics
1
0.1
Ta=
−25
°C
Ta=
25°
C
Ta=
75°C
T a=
125°
C
0.1
FORWARD CURRENT : IF (mA)
DYNAMIC IMPEADANCE : ZZ (Ω)
Ta=75°C
Ta=125°C
1
0
0
10
100
Ta=−25°C
Ta=25°C
ZENER CURRENT : IZ (mA)
10
0.01
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
FORWARD VOLTAGE : VF (V)
Fig.3 Forward characteristics
1.0