UMZ6.8N Diodes Zener Diode UMZ6.8N !External dimensions (Units: mm) !Applications Constant voltage control For the ESD measure of a signal line 2.0±0.2 0.9±0.1 1.3±0.1 0.3 0.6 2.1±0.1 0~0.1 0.15±0.05 6C 0.3±0.1 0.1Min. !Features 1) Small surface mounting type (UMD3) 2) Composite type with two cathode common elements 3) High reliability 1.25±0.1 0.65 0.65 (All pins have the same dimensions) ROHM : UMD3 EIAJ : SC-70 JEDEC : SOT-323 !Construction Silicon epitaxial planar !Circuit !Absolute maximum ratings (Ta=25°C) Parameter Power dissipation Symbol Limits Unit P 200 mW ∗ Junction temperature Tj 150 °C Storage temperature Tstg −55~+150 °C ∗ Total of 2 elements !Electrical characteristics (Ta=25°C) Parameter Zener voltage Symbol Min. Typ. Max. Unit VZ 6.47 − 7.14 V Conditions IZ=5mA Reverse current IR − − 0.5 µA VR=3.5V Operating resistance ZZ − − 40 Ω IZ=5mA Capacitance between terminals CT − 9 − pF f=1MHZ, VR=5V UMZ6.8N Diodes !Others Item IEC1000-4-2 Standard1 Charge/discharge capacitance : 200pF±10% Charge/discharge capacitance : 150pF Device configuration Discharge resistance : 400Ω ±10% Discharge resistance : 330Ω Judgment contents 10 repetitions No malfunction 5 repetitions No spark or smoke emitted : ±25kV : ±20kV : ± 8kV No element destruction No malfunction Contact Suspended : ± 8kV : ±15kV !Electrical characteristic curves (Ta=25°C) 300 10m 1m 100µ 10µ 1µ POWER DISSIPATION : Pd (mW) DYNAMIC IMPEADANCE : Zz (Ω) ZENER CURRENT : Iz (A) −25°C 25°C75°C 125°C 100 10 200 100 100n 5 6 7 ZENER VOLTAGE : Vz (V) Fig.1 Zener voltage characteristic 8 1 0.01 0.1 1 10 ZENER CURRENT : Iz (mA) Fig.2 Operating resistance Zener current characteristic 0 0 25 50 100 AMBIENT TEMPERATURE : Ta (˚C) Fig.3 Derating curve 150