ROHM UMZ68N

UMZ6.8N
Diodes
Zener Diode
UMZ6.8N
!External dimensions (Units: mm)
!Applications
Constant voltage control
For the ESD measure of a signal line
2.0±0.2
0.9±0.1
1.3±0.1
0.3
0.6
2.1±0.1
0~0.1
0.15±0.05
6C
0.3±0.1
0.1Min.
!Features
1) Small surface mounting type (UMD3)
2) Composite type with two cathode common elements
3) High reliability
1.25±0.1
0.65 0.65
(All pins have the same dimensions)
ROHM : UMD3
EIAJ : SC-70
JEDEC : SOT-323
!Construction
Silicon epitaxial planar
!Circuit
!Absolute maximum ratings (Ta=25°C)
Parameter
Power dissipation
Symbol
Limits
Unit
P
200
mW
∗
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55~+150
°C
∗ Total of 2 elements
!Electrical characteristics (Ta=25°C)
Parameter
Zener voltage
Symbol
Min.
Typ.
Max.
Unit
VZ
6.47
−
7.14
V
Conditions
IZ=5mA
Reverse current
IR
−
−
0.5
µA
VR=3.5V
Operating resistance
ZZ
−
−
40
Ω
IZ=5mA
Capacitance between terminals
CT
−
9
−
pF
f=1MHZ, VR=5V
UMZ6.8N
Diodes
!Others
Item
IEC1000-4-2
Standard1
Charge/discharge capacitance : 200pF±10% Charge/discharge capacitance : 150pF
Device configuration
Discharge resistance
: 400Ω ±10% Discharge resistance
: 330Ω
Judgment contents
10 repetitions
No malfunction
5 repetitions
No spark or smoke emitted : ±25kV
: ±20kV
: ± 8kV
No element destruction
No malfunction
Contact
Suspended
: ± 8kV
: ±15kV
!Electrical characteristic curves (Ta=25°C)
300
10m
1m
100µ
10µ
1µ
POWER DISSIPATION : Pd (mW)
DYNAMIC IMPEADANCE : Zz (Ω)
ZENER CURRENT : Iz (A)
−25°C 25°C75°C 125°C
100
10
200
100
100n
5
6
7
ZENER VOLTAGE : Vz (V)
Fig.1 Zener voltage characteristic
8
1
0.01
0.1
1
10
ZENER CURRENT : Iz (mA)
Fig.2 Operating resistance
Zener current characteristic
0
0
25
50
100
AMBIENT TEMPERATURE : Ta (˚C)
Fig.3 Derating curve
150